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FUSB252UMX

FUSB252UMX

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    XFQFN16

  • 描述:

    TYPE-CUSBCCWITHD+\D-PORTPR

  • 数据手册
  • 价格&库存
FUSB252UMX 数据手册
DATA SHEET www.onsemi.com Type-C CC with High Speed Digital (HSD) Port Protection Switch UQFN16 1.8 x 2.6, 0.4P CASE 523BF FUSB252 Description The FUSB252 is an integrated port protection switch for USB Type−C® applications. This product will protect HSD+/− and CCx pins when stressed with voltages up to 20 V. Over−Voltage Protection (OVP) at 5.8 V typical will protect the system for Electrical Overstress (EOS) damage. With a fully integrated USB 2.0 switch for HSD+/−, this product can be easily integrated into existing solutions. The HSD switches can pass USB 2.0 signals with bandwidth 1 GHz to maintain signal integrity and eye compliance. The CC switches have very low RON of 0.3 W to minimize signal attenuation. The FUSB252 also provides Dead Battery support per the Type−C specification Additional features include Under−Voltage Lockout (UVLO) and thermal shutdown. Features • • • • • • • • • • • • • • Fully Type−C Port Protection Supports USB Type−C Specification 1.2 VCC 0 V − 5.5 V 20 V DC Protection on VCC 16 V DC Protection on HSD Port VDD Operating Range, 2.7 V − 5.5 V Current Capability: 1 A CC RON: 0.3 W Typical HSD RON: 5 W Typical Wide −3 db Bandwidth: 1 GHz Low Power Operation: ICC = 9 mA Typical Dead Battery Support (UFP Support when No Power Applied) CC Over−Voltage Protection: Typical = 5.6 V This is a Pb−Free Device MARKING DIAGRAM UZ&K &2&Z UZ &K &2 &Z = Device Code = 2−Digit Lot Run Traceability Code = 2−Digit Date Code = Assembly Location ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Applications • Smartphones • Tablets • Laptops © Semiconductor Components Industries, LLC, 2017 March, 2022 − Rev. 2 1 Publication Order Number: FUSB252/D FUSB252 VBUS VBUS VSYS Type C Controller AP Charger VDD VOCC1 VOCC2 /OE SEL HSD1+ HSD1− HSD2+ HSD2− Logic & Control FUSB252 OVP CC Protection VICC1 VICC2 Type C Connector PMIC Dead Battery Rd INTB / FLAGB High Speed Digital Protection MUX HSD+ HSD− GND GND Figure 1. Typical Application ORDERING INFORMATION Part Number Operating Temperature Range FUSB252UMX −40 to 85°C Package 16−Lead Ultrathin Molded Leadless Package (UMLP) 1.8 x 2.6 mm Top Mark Shipping† UZ 5000 / Tape and Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. www.onsemi.com 2 FUSB252 BLOCK DIAGRAM VDD VICC1 VOCC1 CC Protection Switch & Dead Battery Rd VOCC2 /OE INTB/FLAGB OVP Logic & Control SEL VICC2 HSD1+ HSD1− HSD+ HS Digital Switch HSD2+ HSD2− HSD− GND Figure 2. Block Diagram REFERENCE SCHEMATIC VDD FUSB252 CC1 To Controller CC2 1 VOCC1 USB TYP−C 13VDD VICC1 16 2 VOCC2 VICC2 15 /OE SEL VIO 7 /OE 6SEL D1+ D1− 12 HSD1+ D2+ 10 HSD2+ D2− HSD− 4 9 HSD2− GND GND 5 14 11 HSD1− INTB/ 8 FLAGB HSD+ 3 FLAGB Figure 3. Reference Schematic www.onsemi.com 3 GNDA2 RX2P RX2M VBUSA2 SBU1 DMA DPA CC1 VBUSA1 TX1M TX1P GNDA1 GNDB2 TX2P TX2M VBUSB1 CC2 DPB DMB SBU2 VBUSB2 RX1M RX1P GNDB2 FUSB252 PIN CONFIGURATIONS VICC1 VICC2 16 GND VVDD 14 13 15 1 V0CC1 VVDD GND 13 12 HSD1+ HSD1+ 12 14 VICC2 15 VICC1 16 1 V0CC1 V0CC2 2 11 HSD1− HSD1− 11 2 V0CC2 HSD+ 3 10 HSD2+ HSD2+ 10 3 HSD+ HSD− 4 9 HSD2− 9 4 HSD− 5 6 7 GND SEL /OE HSD2− 8 8 INTB/ FLAGB 7 INTB/ /OE FLAGB Figure 4. Pin Assignment (Top Through View) 6 5 SEL GND Figure 5. Pin Assignment (Bottom View) PIN DESCRIPTION Bump Name Type Description 13 VDD Power Power 5, 14 GND Ground Ground POWER INTERFACE USB TYPE−C CONNECTOR INTERFACE INPUT 15, 16 VICC1, 2 Input Type C CC Interface OVP protection input, Connect to connector USB TYPE−C CONNECTOR INTERFACE OUTPUT 1, 2 VOCC1, 2 Output Type C CC Interface output. Connect to controller USB HIGH SPEED DATA INTERFACE 3 HSD+ I/O Common High Speed Digital / USB Data Bus 4 HSD− I/O Common High Speed Digital / USB Data Bus 12 HSD1+ I/O Multiplexed Source Input 1 11 HSD1− I/O Multiplexed Source Input 1 10 HSD2+ I/O Multiplexed Source Input 2 9 HSD2− I/O Multiplexed Source Input 2 7 /OE I/O Switch Enable 6 SEL I/O Switch Select 8 INTB/FLAGB Output SIGNAL INTERFACE OVP Interrupt Flag www.onsemi.com 4 FUSB252 Table 1. CC SWITCH TRUTH TABLE CONFIGURATION VDD VICC Voltage 0 V − UVLO (Not Valid) 0 V − 5.8 V OFF Dead Battery Rd Inserted 5.8 V to 20 V OFF Dead Battery Rd Inserted 2.7 V − 5.5 V (Valid) 0 V − 5.8 V CC Switch Configuration On 5.8 V to 20 V OFF (OVP) Table 2. CC SWITCH TRUTH TABLE CONFIGURATION /OE SEL VDD HSD+ / HSD− CC 1 0 Not Valid X (Open/High−Z) Dead Battery 0 0 Not Valid X (Open/High−Z) Dead Battery 1 X Valid X (Open/High−Z) On 0 0 Valid HSD1+ / HSD1− On 0 1 Valid HSD2+ / HSD2− On www.onsemi.com 5 FUSB252 ABSOLUTE MAXIMUM RATINGS Symbol Min Max Unit VVDD Supply Voltage from VDD Parameter −0.5 12.0 V VVICC VICCx, to GND −0.5 24 V VSW VHSD±, to GND −5 16 V VOCC, VSW VOCCx VHSDx± to GND −0.5 6 V VCONTROL DC Input Voltage (S, /OE) −0.5 VVDD V ICCSW DC CC Switch Current 1.25 A IUSBSW DC Output Current 100 mA IIK TSTORAGE DC Input Diode Current −50 Storage Temperature Range −65 mA +150 °C TJ Maximum Junction Temperature +150 °C TL Lead Temperature (Soldering, 10 seconds) +260 °C ESD IEC 61000−4−2 System ESD IEC 61000−4−5 Surge ESD Human Body Model, JEDEC JESD22−A114 Charged Device Model, JEDEC LESD22−C101 Connector Pins (VVDD, VICCx, VHSD±) Air Gap 15 Contact 8 kV VICCx to GND −24 24 V VHSD± to GND −16 16 V Power to GND 4 kV External Pins to GND (VHSD±, VICCx) System Side Pin (VHSDx±, VOCCx, S, /OE, FLAGB) 2 All Pins 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Typ Max Unit 2.7 4.2 VVDD Supply Voltage 5.5 V VICC Type C Input Voltage 0 5.5 V VOCC Type C Output Voltage 0 5.5 V ICCSW Maximum CC Switch Current 1 A VCNTRL VSW TA Control Input Voltage (SEL, /OE) −0.5 VVDD V HSD/USB Switch I/O Voltage −0.5 4.5 V Operating Temperature −40 +85 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 6 FUSB252 DC CHARACTERISTICS (Unless otherwise specified: Recommended TA and TJ temperature ranges. All typical values are at TA = 25°C and VDD = 4.2 V unless otherwise specified.) TA = −40°C to +85°C TJ = −40°C to +125°C Symbol Characteristic VDD (V) Conditions Min Typ Max Unit BASIC OPERATION DEVICE ICC IOFF Quiescent Supply Current Power−Off Leakage Current 2.7 to 5.5 /OE = L, IOUT = 0 9 /OE = H, IOUT = 0 9 0 mA 3 mA mA BASIC OPERATION CC SWITCH Dead Battery Supply Current 0 to UVLO Dead Battery State Supply Current 15 CC Path On Resistance 2.7 to 5.5 IOUT = 200 mA 350 480 mW VOV_TRIP Input OVP Lockout 2.7 to 5.5 VICC Rising 5.65 6.20 V VOV_HYS Input OVP Hysteresis 2.7 to 5.5 Under−Voltage Lockout 2.7 to 5.5 ISD(DB) RON VICC Falling VUVLO TSD Thermal Shutdown (Note 1) 5.3 0.35 VDD Rising 2.55 VDD Falling 2.5 Shutdown Threshold 150 Return from Shutdown 130 Hysteresis Rd Dead Battery Pull−Down Resistance 0 to UVLO V 2.70 V °C 20 Dead Battery Resistance 4.08 Voltage on Pin 0.25 5.10 6.12 kW 2.6 V 5.0 V BASIC OPERATION HSD SWITCH VOV_TRIP Input OVP Lockout 2.7 to 5.5 VHSD± Rising 4.4 VHSD± Falling 4.1 VOV_HYS Input OVP Hysteresis 2.7 to 5.5 0.3 V VUV_TRIP Input Under−Voltage Lockout 2.7 to 5.5 −1.2 V VIH Input Voltage High 2.7 to 5.5 VIL Input Voltage Low 2.7 to 5.5 IIN Control Input Leakage 2.7 to 5.5 IOZ Off State Leakage RON DRON 1.3 V 0.5 VSW = 0 to VDD V 0.1 mA 2 mA 100 nA 4.2 0 ≤ HSDn ≤ 3.6 V 4.2 0 ≤ HSD1n±, HSD2n± ≤ 3.6 V HS Switch On Resistance 4.2 VSW = 0.4 V, ION = −8 mA 5 W HS Delta RON 4.2 VSW = 0.4 V, ION = −8 mA 0.1 W 1. Guaranteed by characterization, not production tested. www.onsemi.com 7 FUSB252 AC CHARACTERISTICS (Unless otherwise specified: Recommended TA and TJ temperature ranges. All typical values are at TA = 25°C and VDD = 3.8 V unless otherwise specified.) TA = −40°C to +85°C TJ = −40°C to +125°C Symbol Characteristic VDD (V) Conditions Min Typ Max Unit 0.5 1.0 ms CC SWITCH TIMING PARAMETER tOVP Response Time (Note 2) tON Turn−On Time TMBB Make−Before−Break 2.7 to 5.5 2.7 to 5.5 IOUT = 0.2 A, CL = 200 pF, VICCx 5 V to 6 V VDD Rising 2 V to 3 V 25 ms VDD Rising 2 V to 3 V 600 ns 100 pF MHz CC SWITCH CAPACITANCE CON Switch Path On Capacitance (Note 2) 2.7 to 5.5 CC SWITCH BANDWIDTH BW PD Traffic Bandwidth (Note 2) 2.7 to 5.5 RL = 50 W, CL = 200 pF 25 HSD SWITCH TIMING PARAMETER tOVP Response Time (Note 2) 2.7 to 5.5 IOUT = 0.2 A, VD± 4 V to 5V 0.5 1.0 tON Turn−On Time, /OE to Output (Note 2) 2.7 to 5.5 RL = 50 W, CL = 5 pF, VSW = 0.8 V 25 tOFF Turn−Off Time, /OE to Output (Note 2) 2.7 to 5.5 RL = 50 W, CL = 5 pF, VSW = 0.8 V 100 tPD Propagation Delay (Note 2) 2.7 to 5.5 RL = 50 W, CL = 5 pF 0.25 ns TBBM Break−Before−Make (Note 2) 2.7 to 5.5 RL = 50 W, CL = 5 pF, VSWx = 0.8 V SEL = H ↔ L 100 ms OIRR Off Isolation 2.7 to 5.5 RL = 50 W, f = 240 MHz −25 dB Xtalk Non−Adjacent Channel Crosstalk 2.7 to 5.5 RL = 50 W, f = 240 MHz −40 dB 1.5 pF 4 pF 2.5 pF MHz ms ms 400 ns HSD SWITCH CAPACITANCE CIN Control Pin Input Capacitance (Note 2) 0 CON HSD+ / HSD− On Capacitance (Note 2) 2.7 to 5.5 /OE = L, f = 240 MHz COFF HSD1x / HSD2x Off Capacitance (Note 2) 2.7 to 5.5 /OE = H 2.7 to 5.5 RL = 50 W, CL = 0 pF 1400 2.7 to 5.5 RL = 50 W, CL = 5 pF 560 Skew of Opposite Transitions of the Same Output (Note 2) RL = 50 W, CL = 5 pF 25 ps Total Jitter (Note 2) RL = 50 W, CL = 5 pF, tR = tF = 500 ps (10−90%) at 480 Mbps (PRBS = 215 − 1) 200 ps USB SWITCH BANDWIDTH BW −3 db Bandwidth (Note 2) USB HIGH−SPEED−RELATED tSK(P) tJ 2. Guaranteed by characterization, not production tested. www.onsemi.com 8 FUSB252 OPERATION AND APPLICATION DESCRIPTION Out of Spec Surge/Spike Voltage due to Hot Plug Application Specific Schematic • Place a 5 V to 6 V rated Zener TVS diode such as The FUSB252 protects end systems against 20 V DC on the CC pin, in cases where the FUSB252 is tested to mimic a hot plug event, a fully charged cable connected to a power supply set to 20 V is used to zap the VICC pins of the device. In these cases, the inductance of the cable causes voltage spikes that are higher than the absolute maximum ratings of the of the VICC pins. These voltages can cause damage to the VOCC pins. This scenario does not occur in normal usage. The Type−C specification prevents the plug from having 20 V on VBUS from a PD source prior to a PD contract being completed. When the 20 V potential is on VBUS and shorted to the CC pin, it causes a detach and the voltage spikes are less likely to occur. The following reference circuit is required when the application calls for additional protection to protect against such event as hot plug. • (CZRF52C5V6 or CD1005−Z5V1) on the VOCC pin, and a 5 W resistor to device ground to prevent the FUSB252 from being damaged during these tests. With this additional protection if is also important to select the right external VICC IEC TVS for the best overall performance. Without the additional protection the device by itself can withstand up to 9 V under the same hot plug condition. VDD VDD CC1 CC2 SEL VICC1 VOCC2 VICC2 /OE SEL 5.6 V Zener D1+ D1− D2+ D2− IEC TVS FUSB252 INTB / FLAGB HSD1+ FLAGB Type C Connector /OE VOCC1 HSD+ HSD1− HSD− HSD2+ HSD2− 5W IEC TVS GND Figure 6. Reference Schematic Over−Voltage Protection Fault Reporting When over−voltage event is detected, device will activate OVP to shutdown the switch within tOVP, as well as signal the FLAGB to indicate there is OV event to the system. Upon the detection of an over−voltage event, the INTB/FLAGB signals the fault by activating LOW. www.onsemi.com 9 FUSB252 Type−C Solution Reference USB Type−C Connector VBUS VBUS VICC1 VOCC1 VICC2 VOCC2 SBU1 PMIC/ Charger OVP VCON N FUSB302B I2C FUSB252 SBU2 D+/D− AP/MCU TX1P/M USB2.0 PHY RX1P/M TX2P/M FUSB340 USB3.0 PHY RX2P/M Figure 7. Example of Type−C Solution Reference (SBU) USB Type−C Connector VBUS VBUS VICC1 VOCC1 VICC2 VOCC2 DM PMIC/ Charger OVP VCON N I2C FUSB302B FUSB252 DP AP/MCU TX1P/M USB2.0 PHY RX1P/M TX2P/M FUSB340 USB3.0 PHY RX2P/M Figure 8. Example of Type−C Solution Reference (USB) www.onsemi.com 10 FUSB252 TEST DIAGRAMS VON NC IDn(OFF) A HSDn VSW Dn Select VSW ION GND GND VSel = 0 or VCC Select GND VSel = 0 or VCC NOTE: Each switch port is tested separately. RON = VON / ION Figure 9. On Resistance Figure 10. Off Leakage tRISE = 2.5 ns tFALL = 2.5 ns HSDn Dn VCC VSW GND RL CL RS VOUT Input − V/OE, VSel 10% GND GND NOTE: 90% Output − VOUT GND VCC/2 VCC/2 VOH VSel 90% 90% VOL tON 10% 90% tOFF RL , RS, and CL are functions of the application environment (see AC Tables for specific values) CL includes test fixture and stray capacitance. Figure 11. AC Test Circuit Load Figure 12. Turn−On / Turn−Off Waveforms tRISE = 500 ps tFALL = 500 ps 400 mV Input 50% +400 mV 50% 90% 0V tPLH tPHL −400 mV VOH Output 50% 90% 0V 10% 10% 50% VOL Output tPHL Figure 13. Propagation Delay (tRtF − 500 ps) tPLH Figure 14. Intra−Pair Skew Test tSK(P) www.onsemi.com 11 FUSB252 TEST DIAGRAMS (continued) tRISE = 2.5 ns VCC HSDn Dn VSW1 0V VOUT CL VSW2 GND RL 10% VOUT GND GND 90% VCC/2 Input − VSel 0.9 * Vout 0.9 * Vout RS tBMM NOTE: VSel GND RL , RS, and CL are functions of the application environment (see AC Tables for specific values) CL includes test fixture and stray capacitance. Figure 15. Break−Before−Make Interval Timing Network Analyzer RS VIN Network Analyzer RS RT VS GND VSel GND VSel GND GND RT VOUT GND VS GND GND GND GND RT VOUT GND GND NOTE: VIN Off isolation = 20 Log (VOUT / VIN) RS and RT, are functions of the application environment (see AC Tables for specific values) NOTE: RS and RT, are functions of the application environment (see AC Tables for specific values) Figure 17. Channel Off Isolation Figure 16. Bandwidth Network Analyzer RS NC VIN GND VS VSel GND RT GND GND GND NOTE: RT VOUT RS and RT, are functions of the application environment (see AC GND Tables for specific values) Crosstalk = 20 Log (VOUT / VIN) Figure 18. Non−Adjacent Channel−to−Channel Crosstalk Capacitance Meter Capacitance Meter HSDn HSDn S = LOW or HIGH S = LOW or HIGH OE = HIGH OE = LOW Dn Dn Figure 20. Channel On Capacitance Figure 19. Channel Off Capacitance www.onsemi.com 12 FUSB252 USB, USB−C, USB Type−C and the USB logos are registered trademarks of USB Implementers Forum, Inc. onsemi is licensed by the Philips Corporation to carry the I2C bus protocol. www.onsemi.com 13 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UQFN16 1.8x2.6, 0.4P CASE 523BF ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13709G UQFN16 1.8x2.6, 0.4P DATE 31 OCT 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
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