FUSB340TMX

DATA SHEET www.onsemi.com www.onsemi.jp USB 3.1 SuperSpeed 10Gbps Switch FUSB340 Description The FUSB340 is a 2:1 data switch for USB SuperSpeed Gen1 and Gen2, 5 Gbps and 10 Gbps data. It is targeted at the mobile device market and for use in Type−C applications where a reversible cable requires a switch. The FUSB340 data switch offers superior performance various high speed data transmission protocols: • USB 3.1 SuperSpeed (Gen 2), 10 Gbps • PCI Express, Gen 3 • SATA • Fibre Channel • Display Port 1.3 1 X2QFN18 CASE 722AB MARKING DIAGRAM NK&K &2&Z Features • • • • • • • • • 10 GHz Typical Bandwidth USB 3.1 SuperSpeed 5 Gbps and10 Gbps Switch −1.0 dB Typical Insertion Loss at 2.5 GHz Low Active Power of 12 mA Typical Low Shutdown Power of < 1 mA Max. 2 kV HBM ESD Protection Small Packaging, 18 Lead TMLP Wide VDD Operating Range, 1.5 V−5.0 V This is a Pb−Free Device NK &K &2 &Z = Specific Device Code = Lot Code = Date Code = Assembly Plant Code ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Applications • Smartphones • Tablets • Notebooks © Semiconductor Components Industries, LLC, 2015 August, 2022 − Rev. 4 1 Publication Order Number: FUSB340/D FUSB340 BLOCK DIAGRAM SSRX1− SSRX2− Type C SS Pairs 1 SSRX1+ SSRXCOM− SSRX2+ SSRXCOM+ Processor RX SSTXCOM− SSTX1− SSTXCOM+ SSTX2− TX Type−C Connector SSTX1+ SSTX2+ OE S RX Type C SS Pairs 2 TX Figure 1. Block Diagram TYPICAL APPLICATION Host PC C Figure 2. Typical Application www.onsemi.com 2 C T Y P E 2:1 Phone 2:1 Processor SuperSpeed Rx&TxPairs Set #1 T Y P SuperSpeed Rx&TxPairs Set E #2 Processor FUSB340 GND VDD SSTX1− SSTX1+ 18 17 16 15 PIN CONFIGURATION SSTXCOM− 1 14 SSTX2− SSTXCOM+ 2 13 SSTX2+ GND 3 12 GND SSRXCOM− 4 11 SSRX1− SSRXCOM+ 5 10 SSRX1+ 6 7 8 9 S OE SSRX2+ SSRX2− GND Figure 3. Pin Assignment (Top Through View) PIN DESCRIPTIONS Pin # Name Type Description 1 SSTXCOM− SW SuperSpeed TX− Common 2 SSTXCOM+ SW SuperSpeed TX+ Common 3 GND GND 4 SSRXCOM− SW SuperSpeed RX− Common 5 SSRXCOM+ SW SuperSpeed RX+ Common 6 S Input Switch Select (0 = SW1, 1 = SW2) 7 OE Input Output Enable (0 = Switches Enabled, 1 = Switches Disabled) 8 SSRX2+ SW SuperSpeed RX2+ 9 SSRX2− SW SuperSpeed RX2− 10 SSRX1+ SW SuperSpeed RX1+ 11 SSRX1− SW SuperSpeed RX1− 12 GND GND 13 SSTX2+ SW SuperSpeed TX2+ 14 SSTX2− SW SuperSpeed TX2− 15 SSTX1+ SW SuperSpeed TX1+ 16 SSTX1− SW SuperSpeed TX1− 17 VDD VDD Device Power 18 GND GND Ground Ground (connected to die attach pad) Ground (connected to die attach pad) www.onsemi.com 3 FUSB340 ABSOLUTE MAXIMUM RATINGS Symbol Min Max Unit Supply Voltage −0.5 6.0 V VCNTRL DC Input Voltage (S, OE) (Note 1) −0.5 VDD V VSW DC Switch I/O Voltage (Notes 1, 2) −0.3 2.1 V IIK DC Input Diode Current −50 − mA Isw DC Switch Current − 25 mA −65 +150 °C − 1 VDD Parameter TSTG Storage Temperature MSL Moisture Sensitivity Level (JEDEC J−STD−020A) ESD Human Body Model, JEDEC: JESD22−A114 All Pins 2 − IEC 61000−2−4, Level 4, for Switch Pins Contact 8 − Air 15 − 1 − Charged Device Model, JESD22−C101 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The input and output negative ratings may be exceeded if the input and output diode current ratings are observed. 2. VSW refers to analog data switch paths. RECOMMENDED OPERATING RANGES Symbol VDD tRAMP(VDD) VCNTRL VSW TA Parameter Min Max Unit Supply Voltage 1.5 5.0 V Power Supply Slew Rate 100 1000 ms/V Control Input Voltage (S, OE) (Note 3) 0 5.0 V Switch I/O Voltage (Both SSUSB Switch Paths) 0 2.0 V −40 +85 °C Operating Temperature Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 3. The control inputs must be held HIGH or LOW; they must not float. DC AND TRANSIENT CHARACTERISTICS All typical values are at TA = 25°C unless otherwise specified. TA = −405C to +855C Symbol Parameter Conditions VIK Clamp Diode Voltage S, OE IIK Clamp Diode Current (Switch Pins) VIN = −0.3 V VIH Control Input Voltage High VIL Control Input Voltage Low IIN = −18 mA VDD (V) Min Typ Max Unit 1.5 −1.2 − −0.6 V 0 − − 18 mA S, OE 1.5 1.30 − − V S, OE 3.6 1.4 − − V S, OE 5.0 1.5 − − V S, OE 1.5 − − 0.4 V S, OE 3.6 − − 0.4 V S, OE 5.0 − − 0.4 V IIN Control Input Leakage VSW = −0.6 to 2.0 V, VCNTRL = 0 to VDD 5.0 −500 − 500 nA IOZ Off−State Leakage for Open Data Paths VSW = 0.0 ≤ DATA ≤ 2.0 V 5.0 −0.5 − 0.5 mA ICL On−State Leakage for Closed Data Paths (Note 4) VSW = 0.0 ≤ DATA ≤ 2.0 V 5.0 −0.5 − 0.5 mA IOFF Power−Off Leakage Current (All I/O Ports) VSW = 0 V or 2.0 V 0 −500 − 500 nA www.onsemi.com 4 FUSB340 DC AND TRANSIENT CHARACTERISTICS (continued) All typical values are at TA = 25°C unless otherwise specified. TA = −405C to +855C Symbol RON Parameter Conditions VDD (V) Min Typ Max Unit Switch On Resistance VSW = 0 V, ION = −8 mA 1.5 − 5.4 8.0 W DRON Difference in RON Between Positive−Negative VSW = 0 V, ION = −8 mA 1.5 − 0.1 − W RONF Flatness for RON VSW = 0 ≤ DATA ≤ 2.0 V, ION =−8 mA 1.5 − 0.9 − W ICC Quiescent Supply Current VOE = 0, VSEL = 0 or VDD, IOUT = 0 5.0 − 12 30 mA ICCZ Quiescent Supply Current (High Impedance) VSEL = X, VOE = VDD, IOUT = 0 5.0 − − 1 mA ICCT Increase in Quiescent Supply Current per VCNTRL VSEL or VOE = 1.5 V 5.0 − 5 15 mA 4. For this test, the data switch is closed with the respective switch pin floating. AC ELECTRICAL CHARACTERISTICS All typical value are for VDD = 3.6 V and TA = 25°C unless otherwise specified. TA = −405C to +855C Symbol Parameter Conditions VDD (V) Min Typ Max Unit tON Turn−On Time, S to Output RL = 50 W, CL = 0 pF, VSW = 0 V, VSW = 0.6 V 1.5 to 5.0 V − 350 600 ns tOFF Turn−Off Time, S to Output RL = 50 W, CL = 0 pF, VSW = 0 V, VSW = 0.6 V 1.5 to 5.0 V − 125 300 ns tZHM,ZL Enable Time, OE to Output RL = 50 W, CL = 0 pF, VSW = 0.6 V 1.5 to 5.0 V − 60 150 µs tLZM,HZ Disable Time, OE to Output RL = 50 W, CL = 0 pF, VSW = 0.6 V 1.5 to 5.0 V − 35 240 ns tPD Propagation Delay (Note 5) CL = 0 pF, RL = 50 W 1.5 to 5.0 V − 60 − ps Break−Before−Make (Note 5) RL = 50 W, CL = 0 pF, VSW1 = 0.6 V, VSW2 = −0.6 V 1.5 to 5.0 V 100 − 350 ns Differential Off Isolation (Note 5) VS = 0dBm, RL = 50 W, f = 2.5 GHz 3.6 V − −28 − tBBM DOIRR dB −25 VS = 0 dBm, RL = 50 W, f = 5.0 GHz SDDNEXT Differential Channel Crosstalk (Note 5) VS = 0 dBm, R = 50 W, f = 2.5 GHz 3.6 V − Differential Insertion Loss (Note 5) (All Data Paths) VIN = 0dBm, f = 2.5 GHz, RL = 50 W, CL = 0 pF dB 3.6 V − tSK(P) Differential, −3 dB Bandwidth (Note 5) VIN = 1 Vpk−pk, RL = 50 W, CL = 0 pF (Both Data Paths) Skew of Opposite Transitions of RPU = 50 W to VDD, CL = 0 pF the Same Output (Note 5) −1.0 − dB VIN = 0 dBm, f = 5.0 GHz, RL = 50 W, CL = 0 pF BW − −40 VS = 0 dBm, R = 50 W, f = 5.0 GHz DIL −44 −1.8 3.6 V − 10 − GHz 3.6 V − 6 − ps CIN Control Pin Input Capacitance (Note 5) VDD = 0 V, f = 1 MHz − 2.7 − pF CON On Capacitance (Note 5) VDD = 3.3 V, f = 2.5 GHz − 0.5 − pF COFF Off Capacitance (Note 5) VDD = 3.3 V, f = 2.5 GHz − 0.4 − pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Guaranteed by characterization. www.onsemi.com 5 FUSB340 EYE DIAGRAMS (All plots below are for VDD = 3.6 V and TA = 25°C with 0 dBm differential data.) Figure 4. 5 Gbps Eye Diagram with Eye Mask Figure 5. 10 Gbps Eye Diagram with Eye Mask ORDERING INFORMATION Part Number Operating Temperature Range FUSB340TMX −40 to +85°C Package Shipping† 18−Lead, Quad, Ultra−ultrathin Molded Leadless Package (TMLP), 2.0 mm × 2.8 mm × 0.375 mm 5,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. The table below pertains to the UMLP Package drawing on the following page. PRODUCT−SPECIFIC DIMENSIONS Product A B FUSB340TMX 2.00 mm 2.80 mm www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS X2QFN18, 2.0x2.8, 0.4P CASE 722AB ISSUE O DATE 17 MAY 2016 1 SCALE 4:1 ÉÉ ÉÉ ÉÉ A B D PIN ONE LOCATION 2X 0.05 C 2X 0.05 C L2 L2 DETAIL A E PINS 1, 5, 10 & 14 L3 TOP VIEW A 0.08 C A3 L3 DETAIL B PINS 6, 9, 15 & 18 A1 0.05 C NOTE 4 C SIDE VIEW D2 E2 XXMG G 18X 1 14 DETAIL B MILLIMETERS MIN MAX --0.40 0.00 0.05 0.13 REF 0.13 0.23 2.00 BSC 0.90 1.00 2.80 BSC 1.70 1.80 0.40 BSC 0.25 0.35 0.11 REF 0.14 REF GENERIC MARKING DIAGRAM* e 10 5 DIM A A1 A3 b D D2 E E2 e L L2 L3 L 18X DETAIL A SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.25 MM FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. b 0.10 C A B 0.05 C NOTE 3 e e/2 XX = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. RECOMMENDED MOUNTING FOOTPRINT 2.31 1.05 1 1.85 3.11 0.40 PITCH 18X 18X 0.50 0.25 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON11641G X2QFN18, 2.0 X 2.8, 0.4P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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