FW282-TL-E

FW282 Ordering number : ENA1549 SANYO Semiconductors DATA SHEET FW282 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • 4V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 Gate-to-Source Voltage VGSS ±20 V V Drain Current (DC) ID 6 A Drain Current (PW≤10s) ID Duty cycle≤1% 6.5 A Drain Current (PW≤10μs) IDP Duty cycle≤1% 24 A Allowable Power Dissipation PD When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s 1.8 W Total Dissipation When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Channel Temperature PT Tch Storage Temperature Tstg 2.2 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max 35 V Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VDS=35V, VGS=0V VGS=±16V, VDS=0V Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.5 Forward Transfer Admittance | yfs | VDS=10V, ID=6A 1.8 RDS(on)1 ID=6A, VGS=10V 28 37 mΩ RDS(on)2 ID=3A, VGS=4.5V 43 61 mΩ RDS(on)3 ID=3A, VGS=4V 52 73 mΩ Static Drain-to-Source On-State Resistance Marking : W282 1 μA ±10 μA 2.6 3 V S Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 90209PA TK IM TC-00002093 No. A1549-1/4 FW282 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Turn-ON Delay Time td(on) See specified Test Circuit. 8 ns Rise Time tr td(off) See specified Test Circuit. 34 ns ns Turn-OFF Delay Time Fall Time Total Gate Charge 31 30 ns VDS=20V, VGS=10V, ID=6A 10 nC 2 nC 2 nC Qgs VDS=20V, VGS=10V, ID=6A VDS=20V, VGS=10V, ID=6A Diode Forward Voltage VSD IS=6A, VGS=0V Package Dimensions 0.84 1.2 V Electrical Connection unit : mm (typ) 7005A-003 5.0 8 7 6 5 1 2 3 4 0.2 8 0.3 0.8 pF See specified Test Circuit. Qgd 5 4.4 0.1 1 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 4 1.27 0.43 0.7 0.8 pF 35 See specified Test Circuit. Gate-to-Source Charge 6.0 pF 70 tf Qg Gate-to-Drain “Miller” Charge 1.5 1.8 MAX 470 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view SANYO : SOP8 Switching Time Test Circuit 10V 0V VDD=20V VIN ID=6A RL=3Ω VIN D PW=10μs D.C.≤1% VOUT G FW282 P.G 50Ω S No. A1549-2/4 FW282 VDS=10V 5 3 2 1 4 3 2 --25°C Drain Current, ID -- A =3.0V VGS Ta=7 5°C 8.0V 4 ID -- VGS 6 Ta=25°C V 3.5 16.0V 10.0V 5 1 25° C Drain Current, ID -- A 6.0V 4.5V 4 .0 V ID -- VDS 6 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 6A 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 2 = Ta 3 -- 75 °C °C 2 25 0.1 7 5 3 2 0.01 0.001 2 3 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A SW Time -- ID 100 3 tf 10 tr td(on) 7 5 4.0 IT14972 =3A , ID 4.0V = 3A VGS , I D= 4.5V = VGS 6A , I D= 10.0V = VGS 60 50 40 30 20 10 --40 --20 0 20 40 60 80 100 120 140 160 IT14974 IS -- VSD VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 IT14976 Ciss, Coss, Crss -- VDS 1000 f=1MHz 7 Ciss 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns td(off) 3.5 Diode Forward Voltage, VSD -- V 5 2 70 0.001 5 7 10 IT14975 VDD=20V VGS=10V 7 3.0 80 10 7 5 3 2 3 °C 25 2.5 Ambient Temperature, Ta -- °C VDS=10V 1.0 7 5 2.0 90 IT14973 | yfs | -- ID 1.5 RDS(on) -- Ta 0 --60 16 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Gate-to-Source Voltage, VGS -- V 7 5 1.0 100 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=3A 0.5 Gate-to-Source Voltage, VGS -- V Ta=25°C 90 0 IT14971 RDS(on) -- VGS 100 0 1.0 --25°C 0.2 25°C 0.1 5°C 0 Ta= 7 0 3 2 100 Coss 7 5 Crss 3 2 3 2 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 10 IT14977 0 5 10 15 20 25 30 Drain-to-Source Voltage, VDS -- V 35 IT14978 No. A1549-3/4 FW282 VGS -- Qg 10 3 2 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 0 1 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC PD -- Ta 2.6 Allowable Power Dissipation, PD -- W 10 7 5 9 10 IT14979 IDP=24A PW≤10μs ID=6A 10 3 2 DC 1.0 7 5 op er 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 3 2 1 0 ASO 5 VDS=20V ID=6A ati on 10 0μ s 1m 10 ms 0m s 10 s s (T a= 2 5° C ) Ta=25°C Single pulse When mounted on ceramic substrate(2000mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 IT14980 When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s 2.4 2.2 2.0 1.8 To t 1.6 al 1.4 1.2 di ss nit 1.0 ip ati on 1u 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14981 Note on usage : Since the FW282 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2009. Specifications and information herein are subject to change without notice. PS No. A1549-4/4