Ordering number : ENA0273B
FW4604
Power MOSFET
30V, 6A, 39mΩ, –30V, –4.5A, 65mΩ, Complementary Dual SOIC8
http://onsemi.com
Features
•
On-state resistance
•
4.5V drive
Halogen free compliance
Nch + Pch MOSFET
Protection diode in
•
•
•
Nch : RDS(on)1=30mΩ(typ.)
Pch : RDS(on)1=50mΩ(typ.)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain to Source Voltage
VDSS
30
--30
V
Gate to Source Voltage
VGSS
±20
±20
V
Drain Current (DC)
ID
IDP
6
--4.5
A
Drain Current (PW≤10s)
Duty cycle≤1%
6.5
--5
A
Drain Current (PW≤10μs)
IDP
Duty cycle≤1%
24
--18
Allowable Power Dissipation
When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s
Total Dissipation
PD
PT
2.2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
A
1.8
When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s
W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7072-001
• Package
: SOIC8
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 2,500 pcs./reel
FW4604-TL-2W
4.9
0.375
1
4
0.445
0.254 (GAGE PLANE)
0.175
1.55
1.375
1.27
Semiconductor Components Industries, LLC, 2013
August, 2013
0.715
0.22
5
3.9
6.0
8
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Packing Type : TL
Marking
W4604
TL
LOT No.
Electrical Connection
8
7
6
5
1
2
3
4
SOIC8
80713 TKIM/61312 TKIM/12512PA TKIM TC-00002681 No. A0273-1/7
FW4604
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
[N-channel]
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
V(BR)DSS
IDSS
Gate to Source Leakage Current
IGSS
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs |
VDS=10V, ID=6A
3
RDS(on)1
ID=6A, VGS=10V
30
39
mΩ
RDS(on)2
ID=3A, VGS=4.5V
50
70
mΩ
Static Drain to Source On-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
ID=1mA, VGS=0V
30
V
1.7
1
μA
±10
μA
2.6
V
S
490
pF
85
pF
Crss
45
pF
Turn-ON Delay Time
td(on)
8
ns
Rise Time
tr
45
ns
Turn-OFF Delay Time
td(off)
31
ns
Fall Time
tf
Qg
Total Gate Charge
VDS=10V, f=1MHz
See specified Test Circuit.
28
ns
9.1
nC
1.7
nC
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
IS=6A, VGS=0V
V(BR)DSS
IDSS
IGSS
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
--30
VGS(off)
| yfs |
VDS=--10V, ID=--1mA
--1.7
VDS=--10V, ID=--4.5A
5.2
RDS(on)1
ID=--4.5A, VGS=--10V
50
65
mΩ
RDS(on)2
ID=--2.5A, VGS=--4.5V
85
119
mΩ
VDS=15V, VGS=10V, ID=6A
1.7
nC
0.84
1.2
V
--1
μA
±10
μA
[P-channel]
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
V
--2.6
V
S
430
pF
105
pF
Crss
75
pF
7.5
ns
Rise Time
td(on)
tr
42
ns
Turn-OFF Delay Time
td(off)
43
ns
Fall Time
tf
40
ns
Total Gate Charge
Qg
10
nC
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--15V, VGS=--10V, ID=--4.5A
IS=--4.5A, VGS=0V
2.0
nC
2.5
nC
--0.86
--1.5
V
Switching Time Test Circuit
[N-channel]
10V
0V
[P-channel]
VDD=15V
VIN
0V
--10V
ID=6A
RL=2.5Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
D
PW=10μs
D.C.≤1%
VOUT
G
FW4604
50Ω
ID= --4.5A
RL=3.3Ω
VIN
G
P.G
VDD= --15V
VIN
S
P.G
FW4604
50Ω
S
Ordering Information
Device
FW4604-TL-2W
Package
Shipping
memo
SOIC8
2,500pcs./reel
Pb-Free and Halogen Free
No. A0273-2/7
FW4604
ID -- VDS
4 .5
4.0
V
3.5V
9
6
5
3
2
1
VGS=2.5V
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain to Source Voltage, VDS -- V
1.0
25°
1
0
0
1
IT16716
RDS(on) -- VGS
100
--25°C
4
C
2
7
Ta=7
5°C
3.0V
0
[Nch]
VDS=10V
8
3
0
ID -- VGS
10
Drain Current, ID -- A
4
[Nch]
6.0V
Drain Current, ID -- A
5
V
16.0V 10.0V
6
[Nch]
4
5
Gate to Source Voltage, VGS -- V
2
3
IT16717
RDS(on) -- Ta
100
[Nch]
ID=3A
6A
60
40
20
0
0
2
4
6
8
10
12
14
Gate to Source Voltage, VGS -- V
2
C
5°
--2
=
°C
Ta
75
°C
25
7
5
3
2
3
5 7 0.1
2
3
5 7 1.0
2
3
SW Time -- ID
100
--20
0
20
40
60
80
100
120
140
160
IT16719
IS -- VSD
[Nch]
VGS=0V
1.0
7
5
3
2
0.1
7
5
0
0.2
0.4
0.6
0.8
1.0
Diode Forward Voltage, VSD -- V
[Nch]
Ciss, Coss, Crss -- VDS
1000
7
3
2
tf
10
tr
td(on)
7
5
3
2
[Nch]
Ciss
5
td(off)
1.2
IT16721
f=1MHz
7
5
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
--40
3
2
0.01
5 7 10
IT16720
Drain Current, ID -- A
1.0
0.1
20
3
2
2
0.1
0.01
=10.0
VGS
10
7
5
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
[Nch]
3
6A
=
V, I D
40
Ambient Temperature, Ta -- °C
5
1.0
=4.5
VGS
0
--60
16
VDS=10V
7
=3A
V, I D
60
IT16718
| yfs | -- ID
10
80
Ta=7
5°C
25°C
--25°C
80
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
3
2
100
Coss
7
5
Crss
3
2
VDD=15V
VGS=10V
2
3
5
7
1.0
2
Drain Current, ID -- A
3
5
7
10
IT16722
10
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Drain to Source Voltage, VDS -- V
IT16723
No. A0273-3/7
FW4604
VGS -- Qg
Drain Current, ID -- A
8
7
6
5
4
3
2
1
4
6
8
5 7 1.0
--1.5
ID -- VGS
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain to Source Voltage, VDS -- V
--0.9
--4
--3
--2
--4.5A
120
100
80
60
40
20
--2
--4
--6
--8
--10
--12
--14
Gate to Source Voltage, VGS -- V
10
7
5
Source Current, IS -- A
7
5
3
--5
IT16727
[Pch]
160
140
120
.5A
= --2
I
D
,
V
.5
= --4
VGS
4.5A
, I D= ---10.0V
=
V GS
100
80
60
40
20
--40
--20
0
20
40
60
80
100
120
140
160
IT16729
IS -- VSD
--10
7
5
VDS= --10V
1.0
--4
Ambient Temperature, Ta -- °C
[Pch]
C
5°
--2
=
Ta
°C
25
C
°
75
--3
180
0
--60
--16
3
--2
RDS(on) -- Ta
IT16728
| yfs | -- ID
2
--1
200
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
ID= --2.5A
0
0
Gate to Source Voltage, VGS -- V
Ta=25°C
140
0
0
--1.0
[Pch]
180
160
[Pch]
--5
IT16726
RDS(on) -- VGS
200
5 7 100
IT16725
--6
--1
VGS= --2.5V
--0.2
2 3
--25°
C
--2.0
--0.1
5 7 10
V
--3.0V
0
2 3
.5
0V
--4
.
--3
--4.
5V
2 3
--7
--0.5
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
5 7 0.1
--8
--1.0
Forward Transfer Admittance, | yfs | -- S
2 3
VDS= --10V
--2.5
0
Ta=25°C
Single pulse
When mounted on ceramic substrate (2000mm2×0.8mm)
C
--3.0
0.1
7
5
3
2
[Pch]
VGS=0V
3
2
--1.0
7
5
3
2
Ta=7
5°C
25°C
Drain Current, ID -- A
--3.5
1.0
7
5
3
2
Drain to Source Voltage, VDS -- V
[Pch]
--6
.0V
--16.0V --10.0V
--4.0
ID=6A
IT16724
ID -- VDS
--4.5
10
0μ
1m s
10 s
10 ms
0m
s
DC 10s
op
era
tio
Operation in this
n
area is limited by RDS(on).
10
7
5
3
2
0.01
0.01
10
Total Gate Charge, Qg -- nC
IDP=24A (PW≤10μs)
25°
2
[Nch]
--0.1
7
5
--25°C
0
Drain Current, ID -- A
0
ASO
100
7
5
3
2
5°C
9
Gate to Source Voltage, VGS -- V
[Nch]
VDS=15V
ID=6A
Ta=
7
10
3
2
2
0.1
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
Drain Current, ID -- A
2
3
5 7 --10
IT16730
--0.01
0
--0.2
--0.4
--0.6
--0.8
--1.0
Diode Forward Voltage, VSD -- V
--1.2
IT16731
No. A0273-4/7
FW4604
SW Time -- ID
100
5
tf
3
2
tr
10
td(on)
7
5
3
Coss
100
7
Crss
5
3
VDD= --15V
VGS= --10V
2
3
5
7
2
--1.0
3
5
Drain Current, ID -- A
VGS -- Qg
--10
10
7
--10
IT16732
[Pch]
Drain Current, ID -- A
--6
--5
--4
--3
--2
--1
0
2
4
6
8
10
Total Gate Charge, Qg -- nC
PD -- Ta
2.4
2.2
1.8
1.6
al
t
To
1.4
ni
t
0.8
on
ati
ip
1.0
ss
1u
di
1.2
0.6
0.4
0.2
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT16736
--30
IT16733
[Pch]
--1.0
7
5
3
2
--0.1
7
5
3
2
Ta=25°C
Single pulse
When mounted on ceramic substrate (2000mm2×0.8mm)
5 7--0.1
2 3
5 7--1.0 2 3
5 7--10
2 3
Drain to Source Voltage, VDS -- V
[Nch/Pch]
2.0
--25
--20
10
0
1m μs
ID= --4.5A
10 s
10 ms
0m
s
DC 10s
op
era
tio
Operation in this
n
area is limited by RDS(on).
--10
7
5
3
2
IT16734
When mounted on ceramic substrate
(2000mm2×0.8mm), PW≤10s
--15
IDP= --18A (PW≤10μs)
--0.01
--0.01 2 3
Allowable Power Dissipation(FET1), PD -- W
0
--10
--5
ASO
--100
7
5
3
2
--8
--7
0
Drain to Source Voltage, VDS -- V
VDS= --15V
ID= --4.5A
--9
Gate to Source Voltage, VGS -- V
2
2
1.0
--0.1
Allowable Power Dissipation, PD -- W
Ciss
3
2
0
[Pch]
f=1MHz
7
td(off)
5
Ciss, Coss, Crss -- VDS
1000
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
7
[Pch]
PD (FET1) -- PD (FET2)
2.4
5 7--100
IT16735
[Nch/Pch]
When mounted on ceramic substrate
(2000mm2×0.8mm), PW≤10s
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
Allowable Power Dissipation(FET2), PD -- W IT16737
No. A0273-5/7
FW4604
Outline Drawing
FW4604-TL-2W
Land Pattern Example
Mass (g) Unit
0.082 mm
* For reference
Unit: mm
5.60
1.75
0.65
1.27
No. A0273-6/7
FW4604
Note on usage : Since the FW4604 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
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PS No. A0273-7/7
