FW707-TL-E

FW707 Ordering number : ENA1805 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET FW707 General-Purpose Switching Device Applications Features • • Composite type with a P-channel MOSFET driving from a 4V supply voltage contained in a single package High-density mounting Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --30 V ±20 V ID ID --8 A Drain Current (PW≤10s) Duty cycle≤1% --9 A Drain Current (PW≤100ms) ID Duty cycle≤1% --19 A Drain Current (PW≤10μs) IDP Duty cycle≤1% --52 A Allowable Power Dissipation When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s 2.3 W Total Dissipation PD PT 2.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Package Dimensions Product & Package Information unit : mm (typ) 7005A-003 • Package : SOP8 • JEITA, JEDEC : SC-87, SOT96 • Minimum Packing Quantity : 1,000 pcs./reel 8 0.2 Packing Type : TL 0.3 0.8 5.0 5 Marking 1.5 1.8 MAX W707 4.4 0.7 0.8 6.0 0.1 1 4 1.27 0.43 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 TL LOT No. Electrical Connection 8 7 6 5 1 2 3 4 SANYO : SOP8 http://semicon.sanyo.com/en/network 72810PA TK IM TC-00002341 No.1805-1/4 FW707 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min ID=--1mA, VGS=0V VDS=--30V, VGS=0V typ Unit max --30 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--8A 10 RDS(on)1 ID=--8A, VGS=--10V 20 26 RDS(on)2 ID=--4A, VGS=--4.5V 32 45 mΩ RDS(on)3 ID=--4A, VGS=--4V 36 51 mΩ Input Capacitance Ciss pF Coss VDS=--10V, f=1MHz VDS=--10V, f=1MHz 900 Output Capacitance 240 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 160 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 8.7 ns See specified Test Circuit. 73 ns See specified Test Circuit. 84 ns Fall Time td(off) tf See specified Test Circuit. 74 ns Total Gate Charge Qg VDS=--15V, VGS=--10V, ID=--8A 18 nC Gate-to-Source Charge Qgs 2.1 nC Gate-to-Drain “Miller” Charge Qgd VDS=--15V, VGS=--10V, ID=--8A VDS=--15V, VGS=--10V, ID=--8A 4.7 nC Diode Forward Voltage VSD IS=--8A, VGS=0V Static Drain-to-Source On-State Resistance Rise Time Turn-OFF Delay Time --1.2 --1 μA ±10 μA --2.6 V S --0.82 mΩ --1.2 V Switching Time Test Circuit 0 --10V VDD= --15V VIN ID= --8A RL=1.87Ω VIN D PW=10μs D.C.≤1% VOUT G FW707 50Ω ID -- VDS V --3 . 5V VDS= --10V --14 --5 --4 --3 --2 --12 --10 --8 --6 Ta= 75° C --3.0V Drain Current, ID -- A --6 --4.5 V --7 ID -- VGS --16 --4.0 --10V --5.0.V --8 --4 VGS= --2.5V --2 --1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT15805 0 25° Drain Current, ID -- A S C --25° C P.G 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V --3.5 --4.0 IT15806 No.1805-2/4 FW707 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --8A 40 30 20 10 0 0 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V Ta= 1.0 5°C --2 °C 75 C 25° 7 5 3 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 3 2 SW Time -- ID 3 7 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --20 0 tf 5 3 2 tr 20 40 60 80 100 120 140 160 IT15808 IS -- VSD VGS=0V --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 --0.4 --0.6 --0.8 --1.0 --1.2 IT15810 Ciss, Coss, Crss -- VDS f=1MHz 2 1000 Ciss 7 5 3 Coss 2 Crss td(on) 10 100 7 2 --0.1 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A 7 5 --10 Drain Current, ID -- A --8 --7 --6 --5 --4 --3 --2 --1 0 2 4 6 8 10 12 14 Total Gate Charge, Qg -- nC --5 16 18 20 IT15813 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --100 7 5 3 2 VDS= --15V ID= --8A --9 0 IT15811 VGS -- Qg --10 Gate-to-Source Voltage, VGS -- V 10 3 td(off) 100 --8A Diode Forward Voltage, VSD -- V VDD= --15V VGS= --10V 2 A --4 I D= --10 V GS= --0.01 --0.2 5 7 --10 IT15809 Drain Current, ID -- A V, --4.5 = V, I D 20 3 2 2 0 = VGS 3 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 7 5 2 30 = -V, I D --4.0 Ambient Temperature, Ta -- °C 10 3 = VGS 0 --60 --40 --16 VDS= --10V 2 4A 40 IT15807 | yfs | -- ID 3 50 --25°C ID= --4A 25°C 60 60 C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 70 50 RDS(on) -- Ta 70 Ta=25°C Ta=7 5° 80 --10 7 5 3 2 ASO IDP= --52A (PW≤10μs) 10 0μ s s 1m ID= --8A --1.0 7 5 3 2 --0.1 7 5 3 2 --30 IT15812 10 m 10 s 0m s DC 10 s op era tio Operation in this area is limited by RDS(on). n Ta=25°C Single pulse When mounted on ceramic substrate (2000mm2×0.8mm) 1unit --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT15814 No.1805-3/4 FW707 Allowable Power Dissipation, PD -- W When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s 2.5 2.3 2.0 To t al 1.5 1u di ss nit ip ati on 1.0 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15803 Allowable Power Dissipation(FET1), PD -- W PD -- Ta 3.0 PD (FET1) -- PD (FET2) 2.4 2.3 2.2 When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Allowable Power Dissipation(FET2), PD -- W IT15804 Note on usage : Since the FW707 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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