FW811
Ordering number : ENA1570
SANYO Semiconductors
DATA SHEET
FW811
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
•
•
4V drive.
Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
35
Gate-to-Source Voltage
VGSS
±20
V
V
Drain Current (DC)
ID
8
A
Drain Current (PW≤10s)
ID
Duty cycle≤1%
9
A
Drain Current (PW≤10μs)
IDP
Duty cycle≤1%
52
A
Allowable Power Dissipation
PD
When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s
2.0
W
Total Dissipation
When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s
Channel Temperature
PT
Tch
Storage Temperature
Tstg
2.2
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Symbol
Conditions
typ
Unit
max
Zero-Gate Voltage Drain Current
V(BR)DSS
IDSS
Gate-to-Source Leakage Current
IGSS
VDS=35V, VGS=0V
VGS=±16V, VDS=0V
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
Forward Transfer Admittance
| yfs |
VDS=10V, ID=8A
2.7
RDS(on)1
ID=8A, VGS=10V
18
24
mΩ
RDS(on)2
ID=4A, VGS=4.5V
29
41
mΩ
RDS(on)3
ID=4A, VGS=4V
39
55
mΩ
Static Drain-to-Source On-State Resistance
ID=1mA, VGS=0V
Ratings
min
Marking : W811
35
V
1
μA
±10
μA
2.6
4.5
V
S
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
www.semiconductor-sanyo.com/network
D2409PA TK IM TC-00002070 No. A1570-1/4
FW811
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
Turn-ON Delay Time
td(on)
See specified Test Circuit.
10
ns
Rise Time
tr
td(off)
See specified Test Circuit.
50
ns
ns
Turn-OFF Delay Time
Fall Time
Total Gate Charge
40
40
ns
VDS=20V, VGS=10V, ID=8A
13.0
nC
2.4
nC
3.2
nC
Qgs
VDS=20V, VGS=10V, ID=8A
VDS=20V, VGS=10V, ID=8A
Diode Forward Voltage
VSD
IS=8A, VGS=0V
Package Dimensions
5.0
8
7
6
5
1
2
3
4
0.2
0.3
0.8
0.81
1.2
V
Electrical Connection
unit : mm (typ)
7005A-003
5
4.4
0.1
1
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
4
1.27
0.43
0.7
0.8
pF
See specified Test Circuit.
Qgd
6.0
pF
60
See specified Test Circuit.
Gate-to-Source Charge
1.5
1.8 MAX
pF
90
tf
Qg
Gate-to-Drain “Miller” Charge
8
660
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top view
SANYO : SOP8
Switching Time Test Circuit
10V
0V
VDD=20V
VIN
ID=8A
RL=2.5Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
FW811
P.G
50Ω
S
No. A1570-2/4
FW811
ID -- VDS
VDS=10V
14
3
2
3.0V
1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain-to-Source Voltage, VDS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
8A
50
40
30
20
10
0
0
2
4
6
8
10
12
14
Gate-to-Source Voltage, VGS -- V
| yfs | -- ID
7
1.0
7
5
3
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
4.5
IT15280
=4A
V, I D
=4A
V, I D
5
.
4
=
VGS
8A
, I D=
10.0V
=
VGS
=4.0
VGS
40
30
20
10
--40
--20
0
20
40
60
80
100
120
140
160
IT15282
IS -- VSD
VGS=0V
3
2
1.0
7
5
3
2
0.1
7
5
2
0.01
3
0.8
1.0
1.2
IT15284
1000
Ciss, Coss, Crss -- pF
7
td(off)
tf
2
10
0.6
f=1MHz
100
td(on)
0.4
Ciss, Coss, Crss -- VDS
2
2
3
0.2
Diode Forward Voltage, VSD -- V
VDD=20V
VGS=10V
5
0
IT15283
SW Time -- ID
3
Switching Time, SW Time -- ns
4.0
3
2
Drain Current, ID -- A
tr
7
Ciss
7
5
3
2
Coss
100
Crss
7
5
5
3
2
0.1
3.5
Ambient Temperature, Ta -- °C
2
0.1
0.01
3.0
10
7
5
C
5°
--2
=
Ta
°C
75
2
50
3
2
C
25°
3
2.5
60
IT15281
VDS=10V
5
2.0
RDS(on) -- Ta
0
--60
16
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
10
1.5
70
70
60
1.0
0.5
Gate-to-Source Voltage, VGS -- V
Ta=25°C
ID=4A
0
IT15279
RDS(on) -- VGS
80
0
1.0
5°C
25°C
--25°
C
0.1
4
2
VGS=2.5V
0
6
Ta=
7
0
8
5°C
4
10
--25
°C
5
12
Ta=
7
3.5V
Drain Current, ID -- A
6
25
°C
16.0V
Drain Current, ID -- A
7
ID -- VGS
16
6.0V
4 .5 V
4.0
V
10.0V
8
2
3
5
7 1.0
2
3
5
Drain Current, ID -- A
7
10
2
3
IT15285
3
0
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V
35
IT15286
No. A1570-3/4
FW811
VGS -- Qg
10
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
9
7
6
5
4
3
2
1
0
1
2
3
4
5
6
7
8
9
10
Total Gate Charge, Qg -- nC
PD -- Ta
Allowable Power Dissipation, PD -- W
2.5
11
12
2.0
To
t
al
1.5
di
1u
ss
ip
ni
1.0
ati
on
t
0.5
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
ID=8A
10
7
5
3
2
140
160
IT15080
ms
0m
DC
1.0
7
5
3
2
PW≤10μs
10
μs
1m
s
10
10
s
10
s
op
era
tio
n
Operation in this
area is limited by RDS(on).
0.1
7
5
3
2
Ta=25°C
Single pulse
When mounted on ceramic substrate (2000mm2×0.8mm) 1unit
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
Drain-to-Source Voltage, VDS -- V
IT15287
When mounted on ceramic substrate
(2000mm2×0.8mm), PW≤10s
2.2
IDP=52A
0.01
0.01
13
Allowable Power Dissipation(FET1), PD -- W
0
ASO
100
7
5
3
2
VDS=20V
ID=8A
PD (FET1) -- PD (FET2)
2.2
5 7
IT15079
When mounted on ceramic substrate
(2000mm2×0.8mm), PW≤10s
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
Allowable Power Dissipation(FET2), PD -- W IT15081
Note on usage : Since the FW811 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
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otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of December, 2009. Specifications and information herein are subject
to change without notice.
PS No. A1570-4/4