FW812-TL-E

FW812 Ordering number : ENA1806 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FW812 General-Purpose Switching Device Applications Features • • • Low ON-resistance 4V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit 35 V ±20 V 10 A A Drain Current (PW=10s) ID ID Duty cycle≤1% 11.5 Drain Current (PW≤10μs) IDP Duty cycle≤1% 52 A Allowable Power Dissipation When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s 2.3 W Total Dissipation PD PT 2.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Package Dimensions Product & Package Information unit : mm (typ) 7005A-003 • Package : SOP8 • JEITA, JEDEC : SC-87, SOT96 • Minimum Packing Quantity : 1,000 pcs./reel 8 0.2 0.3 0.8 5.0 5 Packing Type : TL Marking 1.5 1.8 MAX W812 4.4 0.7 0.8 6.0 0.1 1 4 1.27 0.43 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 LOT No. TL Electrical Connection 8 7 6 5 1 2 3 4 SANYO : SOP8 http://semicon.sanyo.com/en/network 81110PA TK IM TC-00002270 No. A1806-1/4 FW812 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings Conditions min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=35V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=10A 5.2 RDS(on)1 ID=10A, VGS=10V 13 17 mΩ RDS(on)2 ID=5A, VGS=4.5V 21 30 mΩ RDS(on)3 ID=5A, VGS=4V 27 38 mΩ Input Capacitance Ciss 960 pF Output Capacitance Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 130 pF VDS=20V, f=1MHz See specified Test Circuit. 80 pF 13.5 ns See specified Test Circuit. 46.6 ns Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance 35 V 1.2 1 μA ±10 μA 2.6 V S Reverse Transfer Capacitance Crss Turn-ON Delay Time Rise Time td(on) tr Turn-OFF Delay Time td(off) See specified Test Circuit. 57.0 ns Fall Time tf See specified Test Circuit. 38.9 ns Total Gate Charge Qg VDS=20V, VGS=10V, ID=10A 19 nC Gate-to-Source Charge Qgs 3.9 nC Gate-to-Drain “Miller” Charge Qgd VDS=20V, VGS=10V, ID=10A VDS=20V, VGS=10V, ID=10A Diode Forward Voltage VSD IS=10A, VGS=0V 3.8 nC 0.85 1.2 V Switching Time Test Circuit 10V 0V VDD=20V VIN ID=10A RL=2.0Ω VIN D PW=10μs D.C.≤1% VOUT G FW812 50Ω V 3.5V 5 4 3 10 8 6 C 6 12 4 VGS=3.0V 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 25 °C 2 2 1.0 IT15793 0 0 1 2 --25° C 7 VDS=10V 14 Drain Current, ID -- A 8 ID -- VGS 16 4.0 14.0V 10.0V 9 6.0V 4.5V ID -- VDS 10 Drain Current, ID -- A S Ta=7 5° P.G 3 4 Gate-to-Source Voltage, VGS -- V IT15794 No. A1806-2/4 FW812 RDS(on) -- VGS 70 10A 50 40 30 20 10 0 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 2 C 5° °C 75 -2 =- Ta 1.0 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 SW Time -- ID 2 40 60 80 100 120 140 160 IT15796 IS -- VSD VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 0.01 0.2 5 7 10 2 IT15797 100 1.0 1.2 IT15798 f=1MHz Ciss, Coss, Crss -- pF 5 tf 2 td(on) 10 0.8 2 td(off) 3 0.6 Ciss, Coss, Crss -- VDS 3 VDD=20V VGS=10V 7 0.4 Diode Forward Voltage, VSD -- V tr 7 Ciss 1000 7 5 3 2 Coss 100 5 Crss 7 3 0.1 2 3 5 7 2 1.0 3 5 7 Drain Current, ID -- A 5 2 10 100 7 5 3 2 Drain Current, ID -- A 8 7 6 5 4 3 2 1 0 2 4 6 8 10 12 14 Total Gate Charge, Qg -- nC 5 16 18 20 IT15801 10 15 20 25 30 Drain-to-Source Voltage, VDS -- V VDS=20V ID=10A 9 0 IT15892 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 20 3 2 Drain Current, ID -- A 0 0 10 7 5 C 25° 3 --20 3 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 7 5 --40 Ambient Temperature, Ta -- °C VDS=10V 0.1 0.01 Switching Time, SW Time -- ns 0 --60 16 IT15891 | yfs | -- ID 10 10 --25° C 4 20 °C 2 I =5A 4.0V, D V GS= 5A , I D= 4.5V = VGS 10A , I D= 10.0V = VGS 30 25° C 0 40 Ta= 75 ID=5A 60 RDS(on) -- Ta 50 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 80 10 7 5 3 2 ASO IDP=52A (PW≤10μs) 10 ID=10A 0.1 7 5 3 2 ms 0m 1.0 7 5 3 2 0μ s 10 μs s 10 10 DC 1m 35 IT15800 s 10 s op era tio n Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (2000mm2×0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 7 IT15802 No. A1806-3/4 FW812 Allowable Power Dissipation, PD -- W When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s 2.5 2.3 2.0 To t al 1.5 1u di ss nit ip ati on 1.0 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15803 Allowable Power Dissipation(FET1), PD -- W PD -- Ta 3.0 PD (FET1) -- PD (FET2) 2.4 2.3 2.2 When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Allowable Power Dissipation(FET2), PD -- W IT15804 Note on usage : Since the FW812 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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