FW907
Ordering number : ENA1810
SANYO Semiconductors
DATA SHEET
N-Channel and P-Channel Silicon MOSFETs
FW907
General-Purpose Switching Device
Applications
Features
•
•
•
ON-resistance Nch: RDS(on)1=13mΩ(typ.), Pch: RDS(on)1=20mΩ(typ.)
4V drive
N-channel MOSFET + P-channel MOSFET
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
30
--30
V
Gate-to-Source Voltage
VGSS
±20
±20
V
Drain Current (DC)
ID
10
--8
A
Drain Current (PW≤10s)
ID
Duty cycle≤1%
11.5
--9
A
Drain Current (PW≤100ms)
ID
Duty cycle≤1%
24
--19
A
Drain Current (PW≤10μs)
IDP
Duty cycle≤1%
52
--52
Allowable Power Dissipation
PD
When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s
Total Dissipation
PT
When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s
2.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
2.3
Package Dimensions
Product & Package Information
unit : mm (typ)
7005A-003
• Package
: SOP8
• JEITA, JEDEC
: SC-87, SOT96
• Minimum Packing Quantity : 1,000 pcs./reel
8
0.2
0.3
0.8
5.0
A
W
5
Packing Type : TL
Marking
1.5
1.8 MAX
W907
4.4
0.7
0.8
6.0
0.1
1
4
1.27
0.43
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
TL
LOT No.
Electrical Connection
8
7
6
5
1
2
3
4
SANYO : SOP8
http://semicon.sanyo.com/en/network
72810PA TK IM TC-00002249 No. A1810-1/6
FW907
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(off)
| yfs |
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=10A
5.2
RDS(on)1
ID=10A, VGS=10V
13
17
mΩ
RDS(on)2
ID=5A, VGS=4.5V
21
30
mΩ
RDS(on)3
ID=5A, VGS=4V
27
38
mΩ
Input Capacitance
Ciss
1000
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
VDS=10V, f=1MHz
170
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
100
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
12
ns
Rise Time
tr
See specified Test Circuit.
75
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
57
ns
Fall Time
tf
Qg
See specified Test Circuit.
44
ns
VDS=15V, VGS=10V, ID=10A
17
nC
VDS=15V, VGS=10V, ID=10A
VDS=15V, VGS=10V, ID=10A
IS=10A, VGS=0V
3.6
nC
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Total Gate Charge
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
30
V
1.2
1
μA
±10
μA
2.6
3.0
0.85
V
S
nC
1.2
V
--1
μA
±10
μA
[P-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
IGSS
ID=--1mA, VGS=0V
VGS(off)
| yfs |
VDS=--10V, ID=--1mA
VDS=--10V, ID=--8A
RDS(on)1
ID=--8A, VGS=--10V
ID=--4A, VGS=--4.5V
20
26
mΩ
RDS(on)2
32
45
mΩ
RDS(on)3
ID=--4A, VGS=--4V
36
51
mΩ
Input Capacitance
Ciss
VDS=--10V, f=1MHz
875
pF
Output Capacitance
Coss
200
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
150
pF
Turn-ON Delay Time
td(on)
tr
See specified Test Circuit.
8.1
ns
See specified Test Circuit.
73
ns
td(off)
tf
See specified Test Circuit.
84
ns
See specified Test Circuit.
74
ns
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Rise Time
Turn-OFF Delay Time
Fall Time
--30
V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
--1.2
--2.6
10
V
S
Total Gate Charge
Qg
VDS=--15V, VGS=--10V, ID=--8A
18
nC
Gate-to-Source Charge
Qgs
2.1
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--15V, VGS=--10V, ID=--8A
VDS=--15V, VGS=--10V, ID=--8A
Diode Forward Voltage
VSD
IS=--8A, VGS=0V
4.7
--0.82
nC
--1.2
V
No. A1810-2/6
FW907
Switching Time Test Circuit
[N-channel]
VDD=15V
VIN
0V
--10V
ID=10A
RL=1.5Ω
VIN
D
PW=10μs
D.C.≤1%
VDD= --15V
VIN
VOUT
D
PW=10μs
D.C.≤1%
G
50Ω
V
4.0
S
ID -- VGS
4
3
11
10
9
8
7
6
5
4
3
2
3.0V
1
2
1
0
VGS=2.5V
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
80
0.9
1.0
0
0.5
1.0
1.5
2.0
2.5
--25°C
3.5V
Ta=7
5°C
V
12
5
0
[Nch]
VDS=10V
13
6
0
50Ω
15
14
Drain Current, ID -- A
7
[Nch]
6.0
Drain Current, ID -- A
8
4.5V
1
14.0V 0.0V
9
FW907
P.G
S
ID -- VDS
10
VOUT
G
FW907
P.G
ID= --8A
RL=1.87Ω
VIN
25°C
10V
0V
[P-channel]
3.0
3.5
Gate-to-Source Voltage, VGS -- V
IT15843
[Nch]
RDS(on) -- Ta
50
4.0
4.5
IT15844
[Nch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
70
ID=5A
60
10A
50
40
30
20
10
0
0
2
4
6
8
10
12
Gate-to-Source Voltage, VGS -- V
14
16
IT15845
40
=5A
4.0V, I D
V GS=
=5A
V, I D
=4.5
S
VG
10A
, I D=
10.0V
=
VGS
30
20
10
0
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT15846
No. A1810-3/6
FW907
7
5
3
C
5°
2
=
Ta
--2
1.0
°C
75
°C
25
7
5
3
2
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
Drain Current, ID -- A
3
2
1.0
7
5
3
2
0.1
7
5
0.01
0.2
3
0.4
0.6
0.8
[Nch]
td(off)
5
tf
2
tr
td(on)
[Nch]
f=1MHz
2
100
3
1.2
IT15848
Ciss, Coss, Crss -- VDS
3
VDD=15V
VGS=10V
7
1.0
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- pF
Ciss
1000
7
5
3
2
Coss
Crss
100
7
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Drain Current, ID -- A
5
3
[Nch]
Drain Current, ID -- A
7
6
5
4
3
2
1
0
1
2
3
4
5
6
7
8
5V
--3
.
--4.
0
5V
--4
.
--2
VGS= --2.5V
--1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
[Nch]
10
μs
0μ
s
1m
s
m
0m s
s
DC
10
0.1
7
5
3
2
s
op
era
tio
Operation in this
area is limited by RDS(on).
n
Ta=25°C
Single pulse
When mounted on ceramic substrate
(2000mm2×0.8mm) 1unit
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
ID -- VGS
2 3
5
IT15852
[Pch]
VDS= --10V
--9
--8
--7
--6
--5
--4
--3
--2
--1
--0.1
30
IT15850
--10
--3
0
10
10
1.0
7
5
3
2
--11
Drain Current, ID -- A
--4
ID=10A
10
7
5
3
2
--12
--3.0V
--6
.
--5
25
Drain-to-Source Voltage, VDS -- V
[Pch]
0V
--6
V
--14.0V --10.0V
--7
20
10
IT15851
ID -- VDS
--8
15
IDP=52A (PW≤10μs)
0.01
0.01
9 10 11 12 13 14 15 16 17
Total Gate Charge, Qg -- nC
10
ASO
100
7
5
3
2
8
0
5
Drain-to-Source Voltage, VDS -- V
VDS=15V
ID=10A
9
0
IT15849
VGS -- Qg
10
2
--1.0
IT15853
0
25°
C
2 3
Ta=
75°
C
7
0.01
--25
°C
Switching Time, SW Time -- ns
2
10
Gate-to-Source Voltage, VGS -- V
VGS=0V
10
7
5
IT15847
SW Time -- ID
2
0
[Nch]
3
2
0.1
0.01
Drain Current, ID -- A
IS -- VSD
3
2
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
[Nch]
VDS=10V
Ta=
75°
C
25°
C
--25
°C
| yfs | -- ID
10
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
Gate-to-Source Voltage, VGS -- V
--3.5
IT15854
No. A1810-4/6
FW907
RDS(on) -- VGS
80
[Pch]
RDS(on) -- Ta
70
[Pch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
40
30
20
10
0
0
--2
--4
--6
--8
--10
--12
Gate-to-Source Voltage, VGS -- V
| yfs | -- ID
7
3
C
5°
--2
=
Ta
2
°C
25
C
5°
7
1.0
7
5
= --8A
V, I D
.0
= --10
VGS
10
--40
--20
0
20
40
60
80
100
120
140
160
IT15856
IS -- VSD
[Pch]
VGS=0V
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
2
2 3
5 7 --0.1
2 3
5 7 --1.0
2 3
7
tf
5
3
2
tr
--1.0
--1.2
IT15858
[Pch]
f=1MHz
2
1000
Ciss
7
5
3
2
Coss
Crss
td(on)
10
--0.8
Ciss, Coss, Crss -- VDS
3
Ciss, Coss, Crss -- pF
td(off)
--0.6
Diode Forward Voltage, VSD -- V
[Pch]
VDD= --15V
VGS= --10V
2
100
--0.4
IT15857
SW Time -- ID
3
--0.01
--0.2
2 3
5 7 --10
Drain Current, ID -- A
Switching Time, SW Time -- ns
20
4A
= -, ID
4.5V
= -VGS
3
2
3
0.1
--0.01
100
7
5
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
Drain Current, ID -- A
VGS -- Qg
--10
2
7
3
[Pch]
--100
7
5
3
2
Drain Current, ID -- A
--7
--6
--5
--4
--3
--2
--1
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18
Total Gate Charge, Qg -- nC
IT15861
--10
--5
--15
--25
--20
--30
Drain-to-Source Voltage, VDS -- V
--8
0
0
IT15859
VDS= --15V
ID= --8A
--9
Gate-to-Source Voltage, VGS -- V
= -, ID
V
0
.
--4
Ambient Temperature, Ta -- °C
10
5
=
VGS
30
IT15855
[Pch]
VDS= --10V
2
4A
40
0
--60
--16
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
3
--14
50
C
--8A
50
--25°
60
60
25°C
ID= --4A
Ta=
75°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
70
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
IT15860
ASO
[Pch]
10
μs
IDP= --52A (PW≤10μs)
10
0μ
s
1m
ID= --8A
10
s
ms
0m
s
10
DC
10
s
op
era
tio
Operation in this
area is limited by RDS(on).
n
Ta=25°C
Single pulse
When mounted on ceramic substrate
(2000mm2×0.8mm) 1unit
--0.01
--0.01 2 3
5 7 --0.1
2 3
5 7--1.0
2 3
5 7 --10
Drain-to-Source Voltage, VDS -- V
2 3
5
IT15862
No. A1810-5/6
FW907
PD -- Ta
[Nch/Pch]
When mounted on ceramic substrate
(2000mm2×0.8mm), PW≤10s
2.5
2.3
2.0
To
t
al
1.5
1u
di
ss
nit
ip
ati
on
1.0
0.5
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT15863
Allowable Power Dissipation(FET1), PD -- W
Allowable Power Dissipation, PD -- W
3.0
PD (FET1) -- PD (FET2)
2.4
2.3
2.2
[Nch/Pch]
When mounted on ceramic substrate
(2000mm2×0.8mm), PW≤10s
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
Allowable Power Dissipation(FET2), PD -- W IT15864
Note on usage : Since the FW907 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
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condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
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This catalog provides information as of July, 2010. Specifications and information herein are subject
to change without notice.
PS No. A1810-6/6
