GBU8A - GBU8M
Bridge Rectifiers
Features
•
•
•
•
•
Glass−Passivated Junction
Surge Overload Rating: 200 A Peak
Reliable Low−Cost Construction Utilizing Molded Plastic Technique
Ideal for Printed Circuit Board
UL Certified: UL #E258596
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PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Marking
Package
Packing
Method
GBU8A
GBU8A
GBU 4L
Rail
GBU8B
GBU8B
GBU8D
GBU8D
GBU8G
GBU8G
GBU8J
GBU8J
GBU8K
GBU8K
GBU8M
GBU8M
SIP4
CASE 127EL
MARKING DIAGRAM
RU$Y&Z&3
GBU
−
RU
$Y
&Z
&3
GBU8A
© Semiconductor Components Industries, LLC, 2010
April, 2019 − Rev. 2
1
~
8A
~
+
= UL Marking
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Specific Device Code
Publication Order Number:
GBU8B/D
GBU8A − GBU8M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Value
Parameter
Symbol
8A
8B
8D
8G
8J
8K
8M
Units
VRRM
Maximum Repetitive Reverse Voltage
50
100
200
400
600
800
1000
V
VRMS
Maximum RMS Bridge Input Voltage
35
70
140
280
420
560
700
V
DC Reverse Voltage (Rated VR)
50
100
200
400
600
800
1000
V
VR
IF(AV)
Average Rectified Forward
Current
TA = 100°C
8.0
A
TA = 45°C
6.0
A
200
A
IFSM
Non−Repetitive Peak Forward Surge Current
8.3 ms Single Half−Sine−Wave
TSTG
Storage Temperature Range
−55 to +150
°C
Operating Junction Temperature
−55 to +150
°C
TJ
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARECTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Value
Units
Power Dissipation
16
W
RqJA
Thermal Resistance per Leg, Junction to Ambient (Note 1)
18
°C/W
RqJL
Thermal Resistance per Leg, Junction to Case (Note 2)
3
°C/W
Value
Units
Symbol
PD
1. Device mounted on PCB with 0.5 × 0.5 inch (12 × 12 mm)
2. Heat sink mounting, 4 × 4 × 0.15 inch copper plate
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
VF
Forward Voltage, per Element
8.0 A
1.0
V
IR
Reverse Current, per Element at Rated VR
TA = 25°C
5.0
mA
TA = 100°C
500
mA
I2t
I2t
t < 8.35 ms
166
A2s
Rating for Fusing
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
GBU8A − GBU8M
TYPICAL PERFORMANCE CHARACTERISTICS
100
HEAT−SINK
MOUNTING, TC
4”x4”x0.15”
COPPER PLATE
6
IF, Forward Current (A)
IF, Average Rectified Forward
Current (A)
8
4
2
0
MOUNTED ON PC BOARD,
TA 0.5” (12.7 mm) LEAD LENGTH
60 Hz RESISTIVE OR INDUCTIVE LOAD
0
50
100
10
TA = 25°C
Pulse Width = 300 ms
1% Duty Cycle
1
0.1
0.7
150
Ambient Temperature (5C)
TC = 100°C
IFSM, Peak Forward Surge
Current (A)
IR, Reverse Current (mA)
1.1
1.2
1.3
1.4
250
1
0.1
TC = 25°C
0
20
40
60
80
100
120
150
100
50
0
140
TA = 25°C
f = 1.0 MHz
Visg = 50m Vp−p
50
5
10
50
10
Figure 4. Non−Repetitive Surge Current
400
1
1
Number of Cycles at 60 Hz
Figure 3. Reverse Current vs. Reverse Voltage
100
TJ = 150°C
8.3 ms Single Half Sine−Wave
200
Percent of Rated Peak Reverse Voltage (%)
CT, Total Capacitance (pF)
1.0
Figure 2. Forward Voltage Characteristics
10
10
0.9
VF, Forward Voltage (V)
Figure 1. Forward Current Derating Curve
0.01
0.8
100
VR, Reverse Voltage (V)
Figure 5. Total Capacitance
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3
100
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SIP4 22.05x18.55
CASE 127EL
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13717G
SIP4 22.05x18.55
DATE 31 DEC 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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