H11A1TVM

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This literature is subject to all applicable copyright laws and is not for resale in any manner. H11A1M 6-Pin General Purpose Phototransistor Optocoupler Features Description • Minimum Current Transfer Ratio, 50 % at IF = 10 mA, VCE = 10 V The general purpose optocoupler consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a standard plastic six-pin dual-in-line package. • Safety and Regulatory Approvals: – UL1577, 4,170 VACRMS for 1 Minute – DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Applications • Power Supply Regulators • Digital Logic Inputs • Microprocessor Inputs Schematic Package Outlines 1 6 2 5 3 NC PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 4 Figure 2. Package Outlines Figure 1. Schematic ©2000 Fairchild Semiconductor Corporation H11A1M Rev. 1.1 www.fairchildsemi.com H11A1M — 6-Pin General Purpose Phototransistor Optocoupler May 2017 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage Characteristics < 150 VRMS I–IV I–IV < 300 VRMS Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol VPR 175 Parameter Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over-Voltage 6000 Vpeak DTI TS IS,INPUT External Creepage 7 External Clearance 7 mm External Clearance (for Option TV, 0.4" Lead Spacing)  10 mm Distance Through Insulation (Insulation Thickness)  0.5 mm Case Temperature(1) 175 °C Input Current(1) 350 mA 800 mW > 109  PS,OUTPUT Output RIO Power(1) Insulation Resistance at TS, VIO = 500 V(1) mm Note: 1. Safety limit values – maximum values allowed in the event of a failure. ©2000 Fairchild Semiconductor Corporation H11A1M Rev. 1.1 www.fairchildsemi.com 2 H11A1M — 6-Pin General Purpose Phototransistor Optocoupler Safety and Insulation Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified. Symbol Parameter Value Unit TOTAL DEVICE TSTG Storage Temperature -40 to +125 °C TOPR Operating Temperature -40 to +100 °C TJ TSOL PD Junction Temperature -40 to +125 ºC 260 for 10 seconds °C Total Device Power Dissipation @ TA = 25°C 270 mW Derate Above 25°C 2.94 mW/°C Lead Solder Temperature EMITTER IF DC/Average Forward Input Current 60 mA VR Reverse Input Voltage 6 V Forward Current – Peak (300 µs, 2% Duty Cycle) 3 A IF(pk) PD LED Power Dissipation @ TA = 25°C 120 mW Derate Above 25°C 1.41 mW/°C V DETECTOR VCEO Collector-to-Emitter Voltage 30 VCBO Collector-to-Base Voltage 70 V VECO Emitter-to-Collector Voltage 7 V Detector Power Dissipation @ TA = 25°C 150 mW Derate Above 25°C 1.76 mW/°C PD ©2000 Fairchild Semiconductor Corporation H11A1M Rev. 1.1 www.fairchildsemi.com 3 H11A1M — 6-Pin General Purpose Phototransistor Optocoupler Absolute Maximum Ratings TA = 25°C unless otherwise specified. Individual Component Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit EMITTER VF Input Forward Voltage IF = 10 mA 1.18 1.50 V IR Reverse Leakage Current VR = 6.0 V 0.001 10 µA DETECTOR BVCEO Collector-to-Emitter Breakdown Voltage IC = 1.0 mA, IF = 0 30 100 V BVCBO Collector-to-Base Breakdown Voltage IC = 100 µA, IF = 0 70 120 V BVECO 7 10 V ICEO Emitter-to-Collector Breakdown Voltage IE = 100 µA, IF = 0 Collector-to-Emitter Dark Current VCE = 10 V, IF = 0 ICBO Collector-to-Base Dark Current VCB = 10 V CCE Capacitance VCE = 0 V, f = 1 MHz 1 50 nA 20 nA 8 pF Transfer Characteristics Symbol Parameter Test Conditions Min. Current Transfer Ratio,Collector-toEmitter IF = 10 mA, VCE = 10 V 50 Collector-to-Emitter Saturation Voltage IC = 0.5 mA, IF = 10 mA Typ. Max. Unit DC CHARACTERISTICS CTR VCE(SAT) % 0.4 V AC CHARACTERISTICS TON Non-Saturated Turn-on Time IF = 10 mA, VCC = 10 V, RL = 100  (Figure 13) 2 µs TOFF Turn-off Time IF = 10 mA, VCC = 10 V, RL = 100  (Figure 13) 2 µs Isolation Characteristics Symbol Characteristic Test Conditions VISO Input-Output Isolation Voltage t = 1 Minute CISO Isolation Capacitance VI-O = 0 V, f = 1 MHz RISO Isolation Resistance VI-O = ±500 VDC, TA = 25°C ©2000 Fairchild Semiconductor Corporation H11A1M Rev. 1.1 Min. Typ. 4170 Unit VACRMS 0.2 1011 Max. pF  www.fairchildsemi.com 4 H11A1M — 6-Pin General Purpose Phototransistor Optocoupler Electrical Characteristics 1.6 1.7 1.4 1.6 1.2 NORMALIZED CTR VF - FORWARD VOLTAGE (V) 1.8 1.5 1.4 TA = -55°C 1.3 TA = 25°C VCE = 5.0 V TA = 25°C Normalized to IF = 10 mA 1.0 0.8 0.6 1.2 0.4 TA = 100°C 1.1 0.2 1.0 0.0 1 10 100 0 2 4 6 1.4 NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) IF = 5 mA NORMALIZED CTR 12 14 16 18 20 1.0 1.2 1.0 IF = 10 mA 0.8 IF = 20 mA 0.6 0.4 Normalized to IF = 10 mA TA = 25°C -40 -20 0 20 40 60 80 0.9 IF = 20 mA 0.8 IF = 10 mA 0.7 IF = 5 mA 0.6 0.5 0.4 0.3 0.2 VCE = 5.0 V 0.1 0.0 100 10 100 1000 RBE- BASE RESISTANCE (kΩ) TA - AMBIENT TEMPERATURE (°C) Figure 6. CTR vs. RBE (Unsaturated) Figure 5. Normalized CTR vs. Ambient Temperature 100 1.0 0.9 VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 10 Figure 4. Normalized CTR vs. Forward Current Figure 3. LED Forward Voltage vs. Forward Current 0.2 -60 8 IF - FORWARD CURRENT (mA) IF - LED FORWARD CURRENT (mA) VCE= 0.3 V 0.8 IF = 20 mA 0.7 0.6 IF = 10 mA 0.5 0.4 0.3 IF = 5 mA 0.2 TA = 25˚C 10 1 IF = 2.5 mA 0.1 IF = 20 mA 0.01 0.1 IF = 10 mA IF = 5 mA 0.0 10 100 0.001 0.01 1000 RBE- BASE RESISTANCE (kΩ) 1 10 Figure 8. Collector-Emitter Saturation Voltage vs. Collector Current Figure 7. CTR vs. RBE (Saturated) ©2000 Fairchild Semiconductor Corporation H11A1M Rev. 1.1 0.1 IC - COLLECTOR CURRENT (mA) www.fairchildsemi.com 5 H11A1M — 6-Pin General Purpose Phototransistor Optocoupler Typical Performance Curves 1000 5.0 NORMALIZED ton - (ton(RBE) / ton(open)) SWITCHING SPEED - (μs) IF = 10 mA VCC = 10 V TA = 25°C 100 Toff 10 Tf Ton 1 Tr 0.1 VCC = 10 V IC = 2 mA RL = 100 Ω 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.1 1 10 100 10 100 R - LOAD RESISTOR (kΩ) Figure 9. Switching Speed vs. Load Resistor ICEO - COLLECTOR -EMITTER DARK CURRENT (nA) NORMALIZED toff - (toff(RBE) / toff(open)) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 VCC = 10 V IC = 2 mA RL = 100 Ω 0.5 0.4 0.3 0.2 100 1000 100000 10000 VCE = 10 V TA = 25°C 1000 100 10 1 0.1 0.01 0.001 0.1 10 10000 Figure 10. Normalized ton vs. RBE 1.4 0.6 1000 RBE - BASE RESISTANCE (kΩ) 10000 100000 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (°C) RBE - BASE RESISTANCE (kΩ) Figure 12. Dark Current vs. Ambient Temperature Figure 11. Normalized toff vs. RBE Switching Time Test Circuit and Waveforms VCC = 10 V INPUT PULSE IC IF INPUT RL 10% OUTPUT OUTPUT PULSE 90% RBE tr ton tf toff Adjust IF to produce IC = 2 mA Figure 13. Switching Time Test Circuit and Waveforms ©2000 Fairchild Semiconductor Corporation H11A1M Rev. 1.1 www.fairchildsemi.com 6 H11A1M — 6-Pin General Purpose Phototransistor Optocoupler Typical Performance Curves (Continued) H11A1M — 6-Pin General Purpose Phototransistor Optocoupler Reflow Profile 300 260°C 280 260 > 24°C = 42 s 240 220 200 180 °C Time above 183°C = 90 s 160 140 120 1.822°C/s Ramp-up rate 100 80 60 40 33 s 20 0 0 60 120 180 270 360 Time (s) Figure 14. Reflow Profile ©2000 Fairchild Semiconductor Corporation H11A1M Rev. 1.1 www.fairchildsemi.com 7 Part Number Package Packing Method H11A1M DIP 6-Pin Tube (50 Units) H11A1SM SMT 6-Pin (Lead Bend) Tube (50 Units) H11A1SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) H11A1VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) H11A1SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) H11A1SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) H11A1TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) Marking Information 1 V 3 H11A1 2 X YY Q 6 5 4 Figure 15. Top Mark Table 1. Top Mark Definitions 1 Fairchild Logo 2 Device Number 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., “6” 5 Digit Work Week, Ranging from “01” to “53” 6 Assembly Package Code ©2000 Fairchild Semiconductor Corporation H11A1M Rev. 1.1 www.fairchildsemi.com 8 H11A1M — 6-Pin General Purpose Phototransistor Optocoupler Ordering Information ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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