H11AG13SD

PHOTOTRANSISTOR OPTOCOUPLERS H11AG1 H11AG2 H11AG3 DESCRIPTION The H11AG series consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications. 6 FEATURES • High efficiency low degradation liquid epitaxial IRED • Logic level compatible, input and output currents, with CMOS and LS/TTL • High DC current transfer ratio at low input currents • Underwriters Laboratory (UL) recognized File #E90700 6 SCHEMATIC 1 1 ANODE 1 6 BASE CATHODE 2 6 APPLICATIONS 1 5 COL N/C 3 4 EMITTER • CMOS driven solid state reliability • Telephone ring detector • Digital logic isolation ABSOLUTE MAXIMUM RATINGS Parameters Symbol Device Value Units TSTG All -55 to +150 °C Operating Temperature TOPR All -55 to +100 °C Lead Solder Temperature TSOL All 260 for 10 sec °C 260 mW 3.5 mW/°C TOTAL DEVICE Storage Temperature Total Device Power Dissipation @ 25°C (LED plus detector) Derate Linearly From 25°C EMITTER Continuous Forward Current Reverse Voltage Forward Current - Peak (1 µs pulse, 300 pps) LED Power Dissipation 25°C Ambient Derate Linearly From 25°C PD All IF All 50 mA VR All 6 V IF(pk) All 3.0 A 75 mW 1.0 mW/°C PD All PD All DETECTOR Detector Power Dissipation @ 25°C Derate Linearly from 25°C Continuous Collector Current  2001 Fairchild Semiconductor Corporation DS300213 1/28/02 All 1 OF 8 150 mW 2.0 mW/°C 50 mA www.fairchildsemi.com PHOTOTRANSISTOR OPTOCOUPLERS H11AG1 H11AG2 ELECTRICAL CHARACTERISTICS H11AG3 (TA = 0-70°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameters Test Conditions Symbol Device Min Typ Max Units IF = 1 mA VR = 5 V, TA = 25°C VF All 1.5 V IR All 10 µA VR = 5 V, TA = 70°C IR All 100 µA V = 0, f = 1.0 MHz CJ All 100 pF IC = 1.0 mA, IF = 0 BVCEO All 30 Collector to Base IC = 100 µA, IF = 0 BVCBO All 70 V V Emitter to Collector IC = 100 µA, IF = 0 BVECO All 7 V VCE = 10 V, IF = 0 ICEO All 5 VCE = 10 V, f = 1 MHz CCE All 2 EMITTER Input Forward Voltage Reverse Leakage Current Capacitance DETECTOR Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Capacitance 10 µA pF ISOLATION CHARACTERISTICS Parameters Input-Output Isolation Voltage TRANSFER CHARACTERISTICS DC Characteristics Test Conditions Symbol Min II-0 ≤ 1 µA, t = 1 min. VISO 5300 Saturation Voltage AC Characteristics Non-Saturated Switching Times Turn-On Time Turn-Off Time www.fairchildsemi.com Max Units Vac(rms) (TA = 25°C Unless otherwise specified.) Test Conditions IF = 1 mA, VCE = 5 V Current Transfer Ratio Typ IF = 1 mA, VCE = 0.6 V Symbol CTR CTR Device Min H11AG1 300 H11AG2 200 H11AG3 H11AG1 100 100 H11AG2 50 H11AG3 20 H11AG1 100 H11AG2 50 Typ Max Units % IF = 0.2 mA, VCE = 1.5 V CTR IF = 2.0 mA, IC = 0.5 mA VCE(SAT) All Test Conditions Symbol Device RL = 100 Ω, IF = 1 mA, VCC = 5 V ton All 5 µS RL = 100 Ω, IF = 1 mA, VCC = 5 V toff All 5 µS 2 OF 8 Min Typ .40 V Max Units 1/28/02 DS300213 PHOTOTRANSISTOR OPTOCOUPLERS H11AG1 H11AG2 H11AG3 Figure 2. Normalized Current Transfer Ratio vs. Forward Current 1.2 1.8 1.0 NORMALIZED CTRCE VF - FORWARD VOLTAGE (V) Figure 1. LED Forward Voltage vs. Forward Current 2.0 1.6 1.4 o TA = -55 C TA = 25 oC 1.2 0.8 0.6 0.4 T A = 100 oC 1.0 NORMALIZED TO: I F = 5mA VCE = 5V o TA = 25 C 0.2 0.8 0.1 1 10 100 0.1 1.6 NORMALIZED CTR CE I F = 10mA I F = 2mA I F = 5mA TA = 25 C o 1.0 0.8 I F = 1mA 0.6 I F = 0.5mA 0.4 I F = 0.2mA 0.2 -40 -20 0 20 40 60 TA - AMBIENT TEMPERATURE -oC 80 100 NORMALIZED ICE - COLLECTOR - EMITTER CURRENT 10 NORMALIZED TO: I F = 5mA V = 5V CE 0.0 -60 100 Figure 4. Normalized Collector vs. Collector - Emitter Voltage Figure 3. Normalized CTR vs. Temperature 1.2 10 IF - FORWARD CURRENT - mA I F - LED FORWARD CURRENT (mA) 1.4 1 I F = 10mA 1 I F = 5mA I F = 2mA I F = 1mA 0.1 I F = 0.5mA I F = 0.2mA 0.01 0.001 0.0001 0.1 NORMALIZED TO: I F = 5mA VCE = 5V TA = 25 o C 1 10 VCE - COLLECTOR - EMITTER VOLTAGE - V DS300213 1/28/02 3 OF 8 www.fairchildsemi.com PHOTOTRANSISTOR OPTOCOUPLERS H11AG1 H11AG2 H11AG3 Figure 6. Normalized Collector - Base Current vs. Temperature 30 10 NORMALIZED COLLECTOR - BASE CURRENT NORMALIZED ICB - COLLECTOR BASE PHOTOCURRENT Figure 5. Normalized Collector Base Photocurrent Ratio vs. Forward Current 25 20 15 10 NORMALIZED TO: I F = 5mA VCB = 5V TA = 25 o C 5 0 0 10 20 30 40 50 60 70 80 90 I F = 10mA I F = 5mA 1 I F = 2mA I F = 1mA 0.1 I F = 0.5mA I F = 0.2mA 0.01 100 NORMALIZED TO: IF = 5mA VCB = 5V o TA = 25 C 0.001 -60 IF - FORWARD CURRENT - mA -40 -20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE - oC Figure 7. Collector-Emitter Dark Current vs. Ambient Temperature 10000 I F = 0mA VCE = 10V ICEO - DARK CURRENT (nA) 1000 100 10 1 0.1 0 10 20 30 40 50 60 70 80 90 100 TA - AMBIENT TEMPERATURE ( oC) www.fairchildsemi.com 4 OF 8 1/28/02 DS300213 PHOTOTRANSISTOR OPTOCOUPLERS H11AG1 H11AG2 H11AG3 47Ω 75KΩ ≤ 25A LOAD SC160B 47Ω 120V 60Hz SUPPLY 1.5MΩ +5V 15K V130LA20A 22K H11AG1 C203D DT230H (4) 2N4256 150pF 0.1 CMOS CONTROL ≥ 0.16mA Figure 8. CMOS Input, 3KW, Zero Voltage Switching Solid State Relay The H11AG1’s superior performance at low input currents allows standard CMOS logic circuits to directly operate a 25A solid state relay. Circuit operation is as follows: power switching is provided by the SC160B, 25A triac. Its gate is controlled by the C203B via the DT230H rectifier bridge. The C203B turn-on is inhibited by the 2N4256 when line voltage is above 12V and/or the H11AG is off. False trigger and dv/dt protection are provided by the combination of the MOV varistor and RC snubber network. 3V ≤ VCC ≤ 10V 47KΩ 4093 or 74HC14 R1 H11AG1 AC INPUT VOLTAGE 1N148 C1 4.7MΩ C2 0.1 4.7KΩ INPUT R1 40-90 VRMS 75 K 20 Hz 1/10 W 95-135 VRMS 180 K 60 Hz 1/10 W 200-280 VRMS 390 K 50/60 Hz 1/4 W C1 0.1 µF 100 V 12 ηF 200 V 6.80 ηF 400 V Z 109K 285K 550K DC component of input voltage is ignored due to C1 Figure 9. Telephone Ring Detector/A.C. Line CMOS Input Isolator The H11AG1 uses less input power than the neon bulb traditionally used to monitor telephone and line voltages. Additionally. response time can be tailored to ignore telephone dial tap, switching transients and other undesired signals by modifying the value of C2. The high impedance to line voltage also can simply board layout spacing requirements. DS300213 1/28/02 5 OF 8 www.fairchildsemi.com PHOTOTRANSISTOR OPTOCOUPLERS H11AG1 H11AG2 Package Dimensions (Through Hole) H11AG3 Package Dimensions (Surface Mount) PIN 1 ID. 0.350 (8.89) 0.330 (8.38) 3 0.270 (6.86) 0.240 (6.10) 2 PIN 1 ID. 1 SEATING PLANE 0.270 (6.86) 0.240 (6.10) 0.350 (8.89) 0.330 (8.38) 4 5 6 0.070 (1.78) 0.045 (1.14) 0.300 (7.62) TYP 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.135 (3.43) 0.200 (5.08) 0.165 (4.18) 0.016 (0.41) 0.008 (0.20) 0.020 (0.51) MIN 0.154 (3.90) 0.100 (2.54) 0.022 (0.56) 0.016 (0.41) 0° to 15° 0.020 (0.51) MIN 0.022 (0.56) 0.016 (0.41) 0.016 (0.40) 0.008 (0.20) 0.100 (2.54) TYP 0.300 (7.62) TYP 0.016 (0.40) MIN 0.315 (8.00) MIN 0.405 (10.30) MAX 0.100 (2.54) TYP Lead Coplanarity : 0.004 (0.10) MAX Package Dimensions (0.4”Lead Spacing) Recommended Pad Layout for Surface Mount Leadform 0.270 (6.86) 0.240 (6.10) 0.070 (1.78) 0.060 (1.52) SEATING PLANE 0.350 (8.89) 0.330 (8.38) 0.070 (1.78) 0.045 (1.14) 0.415 (10.54) 0.295 (7.49) 0.200 (5.08) 0.135 (3.43) 0.154 (3.90) 0.100 (2.54) 0.100 (2.54) 0.004 (0.10) MIN 0.030 (0.76) 0.016 (0.40) 0.008 (0.20) 0° to 15° 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP 0.400 (10.16) TYP NOTE All dimensions are in inches (millimeters) www.fairchildsemi.com 6 OF 8 1/28/02 DS300213 PHOTOTRANSISTOR OPTOCOUPLERS H11AG1 H11AG2 H11AG3 Order Entry Identifier Option S Description .S Surface Mount Lead Bend SD .SD Surface Mount; Tape and reel W .W 0.4” Lead Spacing 300 .300 VDE 0884 300W .300W VDE 0884, 0.4” Lead Spacing 3S .3S VDE 0884, Surface Mount 3SD .3SD VDE 0884, Surface Mount, Tape & Reel Carrier Tape Specifications (“D” Taping Orientation) 12.0 ± 0.1 4.85 ± 0.20 4.0 ± 0.1 0.30 ± 0.05 4.0 ± 0.1 Ø1.55 ± 0.05 1.75 ± 0.10 7.5 ± 0.1 16.0 ± 0.3 13.2 ± 0.2 9.55 ± 0.20 0.1 MAX 10.30 ± 0.20 Ø1.6 ± 0.1 User Direction of Feed NOTE All dimensions are millimeters DS300213 1/28/02 7 OF 8 www.fairchildsemi.com PHOTOTRANSISTOR OPTOCOUPLERS H11AG1 H11AG2 H11AG3 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 8 OF 8 1/28/02 DS300213