H11B1VM

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M 6-Pin DIP General Purpose Photodarlington Optocoupler Features Description ■ High Sensitivity to Low Input Drive Current The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. ■ Meets or Exceeds All JEDEC Registered Specifications ■ Safety and Regulatory Approvals: – UL1577, 4,170 VACRMS for 1 Minute ■ DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Applications ■ Low Power Logic Circuits ■ Telecommunications Equipment ■ Portable Electronics ■ Solid State Relays ■ Interfacing Coupling Systems of Different Potentials and Impedances Schematic ANODE 1 6 BASE 6 1 CATHODE 2 N/C 3 5 COLLECTOR 4 EMITTER 6 1 6 1 Figure 2. Package Outlines Figure 1. Schematic ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.4 www.fairchildsemi.com 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler December 2014 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage Characteristics < 150 VRMS I–IV < 300 VRMS I–IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over-Voltage VPR Parameter 6000 Vpeak External Creepage ≥7 mm External Clearance ≥7 mm External Clearance (for Option TV, 0.4" Lead Spacing) ≥ 10 mm DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm TS Case Temperature(1) 175 °C IS,INPUT Current(1) 350 mA 800 mW Input PS,OUTPUT Output RIO Power(1) Insulation Resistance at TS, VIO = 500 V(1) > 109 Ω Note: 1. Safety limit values – maximum values allowed in the event of a failure. ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.4 www.fairchildsemi.com 2 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler Safety and Insulation Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Unit -40 to +125 °C TOTAL DEVICE TSTG Storage Temperature Operating Temperature -40 to +100 °C Junction Temperature -40 to +125 °C 260 for 10 seconds °C Total Device Power Dissipation @ TA = 25°C 270 mW Derate Above 25°C 3.3 mW/°C IF Continuous Forward Current 80 mA VR Reverse Voltage 3 V TOPR TJ TSOL PD Lead Solder Temperature EMITTER IF(pk) PD Forward Current – Peak (300 µs, 2% Duty Cycle) 3.0 A LED Power Dissipation @ TA = 25°C 120 mW Derate above 25°C 2.0 mW/°C DETECTOR BVCEO Collector-Emitter Breakdown Voltage 30 V BVCBO Collector-Base Breakdown Voltage 30 V BVECO Emitter-Collector Breakdown Voltage 5 V Detector Power Dissipation @ TA = 25°C 150 mW Derate Above 25°C 2.0 mW/°C Continuous Collector Current 150 mA PD IC ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.4 www.fairchildsemi.com 3 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler Absolute Maximum Ratings TA = 25°C Unless otherwise specified. Individual Component Characteristics Symbol Parameter Test Conditions Device Min. Typ. Max. Unit 1.2 1.5 V 1.2 1.5 V EMITTER 4NXXM VF Input Forward Voltage(2) IR Reverse Leakage Current(2) C Capacitance(2) IF = 10 mA H11B1M, TIL113M VR = 3.0 V 4NXXM 0.001 100 µA VR = 6.0 V H11B1M, TIL113M 0.001 10 µA All 150 pF VF = 0V, f = 1.0 MHz 0.8 DETECTOR BVCEO Collector-Emitter Breakdown IC = 1.0 mA, IB = 0 Voltage(2) BVCBO Collector-Base Breakdown Voltage(2) BVECO Emitter-Collector Breakdown IE = 100 µA, IB = 0 Voltage(2) ICEO Collector-Emitter Dark Current(2) IC = 100 µA, IE = 0 VCE = 10 V, Base Open 4NXXM, TIL113M 30 60 V H11B1M 25 60 V All 30 100 V 4NXXM 5.0 10 V H11B1M, TIL113M 7 10 V All 1 100 nA Notes: 2. Indicates JEDEC registered data. ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.4 www.fairchildsemi.com 4 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler Electrical Characteristics TA = 25°C Unless otherwise specified. Transfer Characteristics Symbol Parameter Test Conditions Device Min. Typ. Max. Unit 4N32M, 4N33M 50 (500) mA (%) 4N29M, 4N30M 10 (100) mA (%) IF = 1 mA, VCE = 5 V H11B1M 5 (500) mA (%) IF = 10 mA, VCE = 1 V TIL113M 30 (300) mA (%) DC CHARACTERISTICS IC(CTR) VCE(SAT) Collector Output Current(3)(4)(5) Saturation Voltage(3)(5) IF = 10 mA, VCE = 10 V, IB = 0 IF = 8 mA, IC = 2.0 mA 4NXXM 1.0 V TIL113M 1.25 V IF = 1 mA, IC = 1 mA H11B1M 1.0 V IF = 200 mA, IC = 50 mA, VCC = 10 V, RL = 100 Ω 4NXXM, TIL113M 5.0 µs IF = 10 mA, VCE = 10 V, RL = 100 Ω H11B1M AC CHARACTERISTICS ton toff Turn-on Time Turn-off Time IF = 200 mA, IC = 50 mA, VCC = 10 V, RL = 100 Ω IF = 10 mA, VCE = 10 V, RL = 100 Ω BW 25 µs 4N32M, 4N33M, TIL113M 100 µs 4N29M, 4N30M 40 µs H11B1M Bandwidth(6)(7) 18 µs 30 kHz Notes: 3. Indicates JEDEC registered data. 4. The current transfer ratio(IC / IF) is the ratio of the detector collector current to the LED input current. 5. Pulse test: pulse width = 300 µs, duty cycle ≤ 2.0% . 6. IF adjusted to IC = 2.0 mA and IC = 0.7 mA rms. 7. The frequency at which IC is 3 dB down from the 1 kHz value. Isolation Characteristics Symbol Characteristic Test Conditions VISO Input-Output Isolation Voltage t = 1 Minute CISO Isolation Capacitance RISO Isolation Resistance ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.4 Min. Typ. 4170 VI-O = 0 V, f = 1 MHz VI-O = ±500 VDC, TA = 25°C Unit VACRMS 0.2 1011 Max. pF Ω www.fairchildsemi.com 5 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler Electrical Characteristics (Continued) 1.6 1.7 1.4 1.6 1.2 NORMALIZED CTR VF - FORWARD VOLTAGE (V) 1.8 1.5 1.4 TA = -55°C 1.3 TA = 25°C 1.2 VCE = 5.0 V TA = 25°C Normalized to IF = 10 mA 1.0 0.8 0.6 0.4 TA = 100°C 1.1 0.2 1.0 0.0 1 10 0 100 2 4 6 IF - LED FORWARD CURRENT (mA) 10 12 14 16 18 20 Figure 4. Normalized CTR vs. Forward Current Figure 3. LED Forward Voltage vs. Forward Current 1.4 NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 1.0 1.2 IF = 5 mA NORMALIZED CTR 8 IF - FORWARD CURRENT (mA) 1.0 IF = 10 mA 0.8 IF = 20 mA 0.6 Normalized to IF = 10 mA TA = 25°C 0.4 0.9 IF = 20 mA 0.8 IF = 10 mA 0.7 IF = 5 mA 0.6 0.5 0.4 0.3 0.2 VCE= 5.0 V 0.1 0.0 0.2 -60 -40 -20 0 20 40 60 80 100 10 100 TA - AMBIENT TEMPERATURE (°C) Figure 5. Normalized CTR vs. Ambient Temperature Figure 6. CTR vs. RBE (Unsaturated) 100 1.0 0.9 VCE= 0.3 V VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 1000 RBE- BASE RESISTANCE (kΩ) 0.8 IF = 20 mA 0.7 0.6 IF = 10 mA 0.5 0.4 0.3 IF = 5 mA 0.2 TA = 25˚C 10 1 IF = 2.5 mA 0.1 IF = 20 mA 0.01 IF = 5 mA 0.1 0.001 0.01 0.0 10 100 1000 RBE- BASE RESISTANCE (k Ω) 0.1 1 10 IC - COLLECTOR CURRENT (mA) Figure 7. CTR vs. RBE (Saturated) ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.4 IF = 10 mA Figure 8. Collector-Emitter Saturation Voltage vs. Collector Current www.fairchildsemi.com 6 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler Typical Performance Curves 1000 5.0 NORMALIZED ton - (ton(RBE) / ton(open)) IF = 10 mA VCC = 10 V TA = 25°C SWITCHING SPEED (μs) 100 Toff 10 Tf Ton 1 Tr 0.1 0.1 4.5 VCC = 10 V IC = 2 mA RL = 100 Ω 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 1 10 100 10 100 R-LOAD RESISTOR (kΩ) Figure 9. Switching Speed vs. Load Resistor 10000 100000 Figure 10. Normalized ton vs. RBE ICEO - COLLECTOR -EMITTER DARK CURRENT (nA) 1.4 1.3 NORMALIZED toff - (toff(RBE) / toff(open)) 1000 RBE- BASE RESISTANCE (kΩ) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 VCC = 10 V IC = 2 mA RL = 100 Ω 0.5 0.4 0.3 0.2 10000 VCE = 10 V TA = 25°C 1000 100 10 1 0.1 0.01 0.001 0.1 10 100 1000 10000 0 100000 20 RBE- BASE RESISTANCE (kΩ) 40 60 80 100 TA - AMBIENT TEMPERATURE (°C) Figure 11. Normalized toff vs. RBE Figure 12. Dark Current vs. Ambient Temperature Switching Time Test Circuit and Waveform VCC = 10 V INPUT PULSE IC IF INPUT RL 10% OUTPUT OUTPUT PULSE 90% RBE tr ton tf toff Adjust IF to produce IC = 2 mA Figure 13. Switching Time Test Circuit and Waveform ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.4 www.fairchildsemi.com 7 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler Typical Performance Curves (Continued) 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler Reflow Profile 300 260°C 280 260 > 245°C = 42 s 240 220 200 180 °C Time above 183°C = 90 s 160 140 120 1.822°C/s Ramp-up rate 100 80 60 40 33 s 20 0 0 60 120 180 270 360 Time (s) Figure 14. Reflow Profile ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.4 www.fairchildsemi.com 8 Part Number Package Packing Method 4N29M DIP 6-Pin Tube (50 Units) 4N29SM SMT 6-Pin (Lead Bend) Tube (50 Units) 4N29SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) 4N29VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) 4N29SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) 4N29SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) 4N29TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) Note: 8. The product orderable part number system listed in this table also applies to the 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M devices. Marking Information 1 V 3 4N29 2 X YY Q 6 5 4 Figure 15. Top Mark Table 1. Top Mark Definitions 1 Fairchild Logo 2 Device Number 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., “4” 5 Digit Work Week, Ranging from “01” to “53” 6 Assembly Package Code ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.4 www.fairchildsemi.com 9 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler Ordering Information ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com