H11F1SM

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This literature is subject to all applicable copyright laws and is not for resale in any manner. H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: ■ ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages. As an analog switch: ■ Extremely low offset voltage ■ 60 Vpk-pk signal capability ■ No charge injection or latch-up ■ UL recognized (File #E90700) Applications As a remote variable resistor: ■ Isolated variable attenuator ■ Automatic gain control ■ Active filter fine tuning/band switching As an analog switch: ■ Isolated sample and hold circuit ■ Multiplexed, optically isolated A/D conversion Schematic Package Outlines ANODE 1 6 CATHODE 2 5 3 4 ©2007 Fairchild Semiconductor Corporation H11F1M, H11F2M, H11F3M Rev. 1.0.5 OUTPUT TERM. OUTPUT TERM. www.fairchildsemi.com H11F1M, H11F2M, H11F3M — Photo FET Optocouplers May 2012 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Device Value Units TOTAL DEVICE TSTG Storage Temperature All -40 to +150 °C TOPR Operating Temperature All -40 to +100 °C TSOL Lead Solder Temperature All 260 for 10 sec °C IF Continuous Forward Current All 60 mA VR Reverse Voltage All 5 V EMITTER IF(pk) PD Forward Current – Peak (10µs pulse, 1% duty cycle) All 1 A LED Power Dissipation 25°C Ambient All 100 mW 1.33 mW/°C Derate Linearly from 25°C DETECTOR PD Detector Power Dissipation @ 25°C All Derate linearly from 25°C BV4-6 I4-6 Breakdown Voltage (either polarity) H11F1M, H11F2M Continuous Detector Current (either polarity) ©2007 Fairchild Semiconductor Corporation H11F1M, H11F2M, H11F3M Rev. 1.0.5 300 mW 4.0 mW/°C ±30 V H11F3M ±15 V All ±100 mA www.fairchildsemi.com 2 H11F1M, H11F2M, H11F3M — Photo FET Optocouplers Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Individual Component Characteristics Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit 1.3 1.75 V 10 µA EMITTER VF Input Forward Voltage IF = 16mA All IR Reverse Leakage Current VR = 5V All CJ Capacitance V = 0 V, f = 1.0MHz All 50 pF OUTPUT DETECTOR BV4-6 I4-6 Breakdown Voltage Either Polarity Off-State Dark Current I4-6 = 10µA, IF = 0 H11F1M, H11F2M 30 H11F3M 15 V V4-6 = 15 V, IF = 0 All 50 nA V4-6 = 15 V, IF = 0, TA = 100°C All 50 µA R4-6 Off-State Resistance V4-6 = 15 V, IF = 0 All C4-6 Capacitance V4-6 = 15 V, IF = 0, f = 1MHz All MΩ 300 15 pF Transfer Characteristics Symbol Characteristics Test Conditions Device Min Typ* Max Units H11F1M 200 Ω H11F2M 330 H11F3M 470 H11F1M 200 H11F2M 330 H11F3M 470 DC CHARACTERISTICS R4-6 R6-4 On-State Resistance On-State Resistance Resistance, non-linearity and assymetry IF = 16mA, I4-6 = 100µA IF = 16mA, I6-4 = 100µA IF = 16mA, I4-6 = 25µA RMS, f = 1kHz All 2 Ω % AC CHARACTERISTICS ton Turn-On Time RL = 50Ω, IF = 16mA, V4-6 = 5V All 45 µs toff Turn-Off Time RL = 50Ω, IF = 16mA, V4-6 = 5V All 45 µs Isolation Characteristics Symbol Device Min. VISO Isolation Voltage Characteristic f = 60Hz, t = 1 sec. Test Conditions All 7500 RISO Isolation Resistance VI-O = 500 VDC All 1011 CISO Isolation Capacitance f = 1MHz All Typ.* Max. Units VACPEAK Ω 0.2 pF *All Typical values at TA = 25°C ©2007 Fairchild Semiconductor Corporation H11F1M, H11F2M, H11F3M Rev. 1.0.5 www.fairchildsemi.com 3 H11F1M, H11F2M, H11F3M — Photo FET Optocouplers Electrical Characteristics (TA = 25°C unless otherwise specified.) As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 0110/1.89 Table 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 CTI Comparative Tracking Index 175 VPR Input to Output Test Voltage, Method b, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 sec, Partial Discharge < 5pC 1594 Vpeak Input to Output Test Voltage, Method a, VIORM x 1.5 = VPR, Type and Sample Test with tm = 60 sec, Partial Discharge < 5pC 1275 Vpeak VIORM Max. Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over Voltage 6000 Vpeak External Creepage 7 mm External Clearance 7 mm Insulation Thickness 0.5 mm Insulation Resistance at Ts, VIO = 500V 109 Ω RIO ©2007 Fairchild Semiconductor Corporation H11F1M, H11F2M, H11F3M Rev. 1.0.5 www.fairchildsemi.com 4 H11F1M, H11F2M, H11F3M — Photo FET Optocouplers Safety and Insulation Ratings Figure 1. Resistance vs. Input Current Figure 2. Output Characteristics I46 – OUTPUT CURRENT (μA) r(on) – NORMALIZED RESISTANCE 800 10 1 IF = 14mA 400 IF = 10mA IF = 6mA 200 IF = 6mA -200 IF = 10mA -400 IF = 14mA IF = 18mA -800 1 1 0 -0.2 100 -0.1 Figure 3. LED Forward Voltage vs. Forward Current 0.2 Figure 4. Off-state Current vs. Ambient Temperature I46 – NORMALIZED DARK CURRENT 1.8 VF – FOR WARD VOLTAGE (V) 0.1 10000 2.0 1.6 TA = -40°C TA = 25°C 1.2 1.0 0.0 V46 – OUTPUT VOLTAGE (V) IF – INPUT CURRENT (mA) 1.4 IF = 2mA IF = 2mA 0 -600 Normalized to: IF = 16mA I46 = 5μA RMS 0.1 IF = 18mA 600 TA = 100°°C 0.8 NORMALIZED TO: V46 = 15V IF = 0mA TA = 25°C 1000 100 10 1 0.1 1 10 0 100 20 40 60 80 100 TA – AMBIENT TEMPERATURE (°C) IF – LED FOR WARD CURRENT (mA) Figure 5. Resistive Non-Linearity vs. D.C. Bias r(on) – CHANGE IN RESISTANCE (%) 5 4 3 2 I4-6 = 10μA RMS r(on) = 200Ω 1 0 1 50 100 150 200 250 300 350 V4-6 – D.C. BIAS VOLTAGE (mV) ©2007 Fairchild Semiconductor Corporation H11F1M, H11F2M, H11F3M Rev. 1.0.5 www.fairchildsemi.com 5 H11F1M, H11F2M, H11F3M — Photo FET Optocouplers Typical Performance Curves As a Variable Resistor As an Analog Signal Switch ISOLATED SAMPLE AND HOLD CIRCUIT ISOLATED VARIABLE ATTENUATORS 500K + VIN VOUT VIN VIN 50 - VOUT VIN H11F1M H11F1M C IF IF IF VOUT H11F1M VOUT t IF LOW FREQUENCY HIGH FREQUENCY @1MHz DYNAMIC RANGE 50db FOR 0 ≤ IF ≤ 30mA @10KHz DYNAMIC RANGE 70db FOR 0 ≤ IF ≤ 30mA Distortion free attenuation of low level A.C. signals is accomplished by varying the IRED current, IF Note the wide dynamic range and absence of coupling capacitors; D.C. level shifting or parasitic feedback to the controlling function. AUTOMATIC GAIN CONTROL Accuracy and range are improved over conventional FET switches because the H11FXM has no charge injection from the control signal. The H11FXM also provides switching of either polarity input signal up to 30V magnitude. . MULTIPLEXED, OPTICALLY-ISOLATED A/D CONVERSION CALL V1 H11F1M CALL Vn DATA ACQUISITION VOUT V1 V2 + H74A1 A/D CONVERTER Vn H11F1M MSB MSB - DATA INPUT VIN LSB H74A1 500K PROCESS CONTROL LOGIC SYSTEM LSB H11F1M IF AGC SIGNAL This simple circuit provides over 70db of stable gain control for an AGC signal range of from 0 to 30mA. This basic circuit can be used to provide programmable fade and attack for electronic music. The optical isolation, linearity and low offset voltage of the H11FXM allows the remote multiplexing of low level analog signals from such transducers as thermocouplers, Hall effect devices, strain gauges, etc. to a single A/D converter. ACTIVE FILTER FINE TUNING/BAND SWITCHING IF1 TEST EQUIPMENT - KELVIN CONTACT POLARITY IF2 H11F1M H11F1M H11F1M IF H11F1M IF A A1 A2 C ITEST A3 DEVICE UNDER TEST PARAMETER SENSING BOARD H11F1M C & D FOR POLARITY 2 D B IF IF TO A & B FOR POLARITY 1 IF H11F1M IF1 ADJUSTS f1, IF2 ADJUSTS f2 The linearity of resistance and the low offset voltage of the H11FXM allows the remote tuning or band-switching of active filters without switching glitches or distortion. This schematic illustrates the concept, with current to the H11F1M IRED’s controlling the filter’s transfer characteristic. ©2007 Fairchild Semiconductor Corporation H11F1M, H11F2M, H11F3M Rev. 1.0.5 In many test equipment designs the auto polarity function uses reed relay contacts to switch the Kelvin Contact polarity. These reeds are normally one of the highest maintenance cost items due to sticking contacts and mechanical problems. The totally solid-State H11FXM eliminates these troubles while providing faster switching. www.fairchildsemi.com 6 H11F1M, H11F2M, H11F3M — Photo FET Optocouplers Typical Applications Option Order Entry Identifier (Example) No option H11F1M S H11F1SM SR2 H11F1SR2M V H11F1VM TV H11F1TVM IEC60747-5-2 approval, 0.4" Lead Spacing SV H11F1SVM IEC60747-5-2 approval, Surface Mount SR2V H11F1SR2VM Description Standard Through Hole Device Surface Mount Lead Bend Surface Mount; Tape and Reel IEC60747-5-2 approval IEC60747-5-2 approval, Surface Mount, Tape and Reel Marking Information 1 V 3 H11F1 2 X YY Q 6 4 5 Definitions ©2007 Fairchild Semiconductor Corporation H11F1M, H11F2M, H11F3M Rev. 1.0.5 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 One digit year code, e.g., ‘7’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code 7 www.fairchildsemi.com H11F1M, H11F2M, H11F3M — Photo FET Optocouplers Ordering Information 12.0 ± 0.1 4.5 ± 0.20 2.0 ± 0.05 0.30 ± 0.05 4.0 ± 0.1 Ø1.5 MIN 1.75 ± 0.10 11.5 ± 1.0 21.0 ± 0.1 9.1 ± 0.20 0.1 MAX 10.1 ± 0.20 24.0 ± 0.3 Ø1.5 ± 0.1/-0 User Direction of Feed ©2007 Fairchild Semiconductor Corporation H11F1M, H11F2M, H11F3M Rev. 1.0.5 8 www.fairchildsemi.com H11F1M, H11F2M, H11F3M — Photo FET Optocouplers Carrier Tape Specification H11F1M, H11F2M, H11F3M — Photo FET Optocouplers Reflow Profile Temperature (°C) TP 260 240 TL 220 200 180 160 140 120 100 80 60 40 20 0 Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S tP Tsmax tL Preheat Area Tsmin ts 120 240 360 Time 25°C to Peak Time (seconds) Profile Freature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60–120 seconds Ramp-up Rate (tL to tP) 3°C/second max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60–150 seconds Peak Body Package Temperature 260°C +0°C / –5°C Time (tP) within 5°C of 260°C 30 seconds Ramp-down Rate (TP to TL) 6°C/second max. Time 25°C to Peak Temperature ©2007 Fairchild Semiconductor Corporation H11F1M, H11F2M, H11F3M Rev. 1.0.5 8 minutes max. 9 www.fairchildsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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