H11F2M

DATA SHEET www.onsemi.com Photo FET Optocouplers H11F1M, H11F2M, H11F3M PDIP6 8.51x6.35, 2.54P CASE 646BX 6 1 General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in−line packages. Features PDIP6 8.51x6.35, 2.54P CASE 646BY 6 1 PDIP6 8.51x6.35, 2.54P CASE 646BZ 6 • As a Remote Variable Resistor: 1 ≤ 100 W to ≥ 300 MW ♦ ≤15 pF Shunt Capacitance ♦ ≥100 GW I/O Isolation Resistance As an Analog Switch: ♦ Extremely Low Offset Voltage ♦ 60 Vpk−pk Signal Capability ♦ No Charge Injection or Latch−Up ♦ UL Recognized (File #E90700) These are Pb−Free Devices ♦ • • MARKING DIAGRAM ON H11F1 VXYYQ Application H11F1 = Specific Device Code V = VDE Mark (Only appears on parts ordered with VDE option − See order entry table) X = One−Digit Year Code, e.g., “7” YY = Two Digit Work Week Ranging from “01” to “53” Q = Assembly Package Code • As a Remote Variable Resistor: Isolated Variable Attenuator Automatic Gain Control ♦ Active Filter Fine Tuning/Band Switching As an Analog Switch: ♦ Isolated Sample and Hold Circuit ♦ Multiplexed, Optically Isolated A/D Conversion ♦ ♦ • SCHEMATIC ANODE 1 CATHODE 2 3 OUTPUT 6 TERM. 5 OUTPUT 4 TERM. ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2007 September, 2022 − Rev. 3 1 Publication Order Number: H11F3M/D H11F1M, H11F2M, H11F3M SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.) Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1 < 150 Vrms I−IV < 300 Vrms I−IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input to Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input to Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over Voltage VPR Parameter 6,000 Vpeak External Creepage ≥7 mm External Clearance ≥7 mm External Clearance (for Option TV, 0.4″ Lead Spacing) ≥10 mm DTI Distance Through Insulation (Insulation Thickness) ≥0.5 mm TS Case Temperature (Note 1) 175 °C IS,INPUT Input Current (Note 1) 350 mA PS,OUTPUT Output Power (Note 1) 800 mW Insulation Resistance at Ts, VIO = 500 V (Note 1) >109 W RIO 1. Safety limit values – maximum values allowed in the event of a failure. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Parameter Value Unit TOTAL DEVICE TSTG Storage Temperature −40 to +125 °C TOPR Operating Temperature −40 to +100 °C TSOL Lead Solder Temperature 260 for 10 seconds °C EMITTER IF Continuous Forward Current 60 mA VR Reverse Voltage 5 V Forward Current – Peak (10 ms Pulse, 1% Duty Cycle) 1 A IF(pk) PD LED Power Dissipation Ambient 25°C Ambient 100 mW Derate Linearly from 25°C 1.33 mW/°C Detector Power Dissipation at 25°C 300 mW Derate Linearly from 25°C 4.0 mW/°C H11F1M, H11F2M ±30 V H11F3M ±15 V ±100 mA DETECTOR PD BV4−6 I4−6 Breakdown Voltage (Either Polarity) Continuous Detector Current (Either Polarity) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 2 H11F1M, H11F2M, H11F3M ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) INDIVIDUAL COMPONENT CHARACTERISTICS Symbol Parameter Test Conditions Min Typ* Max Unit − 1.3 1.75 V EMITTER VF Input Forward Voltage IF = 16 mA IR Reverse Leakage Current VR = 5 V − − 10 mA CJ Capacitance V = 0 V, f = 1.0 MHz − 50 − pF I4−6 = 10 mA, IF = 0 30 − − V 15 − − V4−6 = 15 V, IF = 0 − − 50 nA V4−6 = 15 V, IF = 0, TA = 100°C − − 50 mA OUTPUT DETECTOR BV4−6 Breakdown Voltage Either Polarity H11F1M, H11F2M H11F3M I4−6 Off−State Dark Current R4−6 Off−State Resistance V4−6 = 15 V, IF = 0 300 − − MW C4−6 Capacitance V4−6 = 15 V, IF = 0, f = 1 MHz − − 15 pF Min Typ* Max Unit − − 200 W H11F2M − − 330 H11F3M − − 470 − − 200 H11F2M − − 330 H11F3M − − 470 IF = 16 mA, I4−6 = 25 mA RMS, f = 1 kHz − 2 − % TRANSFER CHARACTERISTICS Characteristics Symbol Test Conditions DC CHARACTERISTICS R4−6 R6−4 On−State Resistance On−State Resistance H11F1M H11F1M Resistance, Non−Linearity and Assymetry IF = 16 mA, I4−6 = 100 mA IF = 16 mA, I6−4 = 100 mA W AC CHARACTERISTICS ton Turn−On Time RL = 50 W, IF = 16 mA, V4−6 = 5 V − − 45 ms toff Turn−Off Time RL = 50 W, IF = 16 mA, V4−6 = 5 V − − 45 ms Min Typ* Max Unit t = 1 Minute 4170 − − VACRMS 1011 − − W − 0.2 − pF ISOLATION CHARACTERISTICS Symbol VISO Characteristics Input−Output Isolation Voltage Test Conditions RISO Isolation Resistance VI−O = 500 VDC CISO Isolation Capacitance f = 1 MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *All Typical values at TA= 25°C. www.onsemi.com 3 H11F1M, H11F2M, H11F3M I46, OUTPUT CURRENT (mA) r(on), NORMALIZED RESISTANCE TYPICAL PERFORMANCE CURVES 10 1 0.1 Normalized to: IF = 16 mA I46 = 5 mA RMS 800 IF = 18 mA 600 IF = 14 mA 400 IF = 10 mA IF = 6 mA 200 IF = 6 mA −200 IF = 10 mA −400 IF = 14 mA −600 IF = 18 mA −800 1 10 100 −0.2 −0.1 IF, INPUT CURRENT (mA) 0.1 0.2 V46, OUTPUT VOLTAGE (V) 10000 2.0 I46, NORMALIZED DARK CURRENT (nA) 1.8 1.6 TA = −40°C 1.4 TA = 25°C 1.2 1.0 TA = 100°C Normalized to: V46 = 15 V IF = 0 mA 1000 T = 25°C A 100 10 1 0.1 1 10 0 100 20 IF, LED FORWARD CURRENT (mA) 40 4 3 2 V4−6 = 10 mA RMS r(on) = 200 W 1 1 50 80 Figure 4. Off−State Current vs. Ambient Temperature 5 0 60 TA, AMBIENT TEMPERATURE (°C) Figure 3. LED Forward Voltage vs. Forward Current r(on), CHANGE IN RESISTANCE (%) VF, FORWARD VOLTAGE (V) 0.0 Figure 2. Output Characteristics Figure 1. Resistance vs. Input Current 0.8 IF = 2 mA IF = 2 mA 0 100 150 200 250 300 350 V4−6, D.C. BIAS VOLTAGE (mV) Figure 5. Resistive Non−Linearity vs. D.C. Bias www.onsemi.com 4 100 H11F1M, H11F2M, H11F3M TYPICAL APPLICATIONS As an Analog Signal Switch As a Variable Resistor ISOLATED VARIABLE ATTENUATORS ISOLATED VARIABLE ATTENUATORS 500K + VIN VIN VIN 50 − VOUT VIN H11F1M H11F1M C IF IF HIGH FREQUENCY LOW FREQUENCY Dynamic Range 50 db Dynamic Range 70 db @ 1 MHz For 0 ≤ I ≤ 30 mA @ 10 kHz For 0 ≤ IF ≤ 30 mA F VOUT MULTIPLEXED, OPTICALLY−ISSOLATED A/D CONVERSION AUTOMATIC GAIN CONTROL CALL V1 H11F1M V1 V2 − H11F1M IF CALL Vn VOUT + t IF Accuracy and range are improved over conventional FET switches because the H11FXM has no charge injection from the control signal. The H11FXM also provides switching of either polarity input signal up to 30V magnitude. Distortion free attenuation of low level A.C. signals is accomplished by varying the IRED current, IF Note the wide dynamic range and absence of coupling capacitors; D.C. level shifting or parasitic feedback to the controlling function. VIN IF VOUT H11F1M Vn 500K H74A1 MSB MSB A/D CONVERTER LSB PROCESS CONTROL LOGIC LSB SYSTEM DATA INPUT VOUT H74A1 H11F1M AGC SIGNAL This simple circuit provides over 70db of stable gain control for an AGC signal range of from 0 to 30mA. This basic circuit can be used to provide programmable fade and attack for electronic music. The optical isolation, linearity and low offset voltage of the H11FXM allows the remote multiplexing of low level analog signals from such transducers as thermocouplers, Hall effect devices, strain gauges, etc. to a single A/D converter. ACTIVE FILTER FINE TUNING/BAND SWITCHING IF2 TEST EQUIPMENT − KELVIN CONTACT POLARITY H11F1M IF2 H11F1M IF H11F1M H11F1M IF C A IF TO PARAMETER A & B FOR POLARITY 1 SENSING BOARD C & D FOR POLARITY 2 ITEST A1 A2 DEVICE UNDER TEST A3 D B IF IF2 ADJUSTS f1, IF2 ADJUSTS f2 H11F1M IF H11F1M In many test equipment designs the auto polarity function uses reed relay contacts to switch the Kelvin Contact polarity. These reeds are normally one of the highest maintenance cost items due to sticking contacts and mechanical problems. The totally solid−State H11FXM eliminates these troubles while providing faster switching. The linearity of resistance and the low offset voltage of the H11FXM allows the remote tuning or band−switching of active filters without switching glitches or distortion. This schematic illustrates the concept, with current to the H11F1M IRED ’s controlling the filter’s transfer characteristic. www.onsemi.com 5 H11F1M, H11F2M, H11F3M REFLOW PROFILE 260 240 220 Temperature (_C) 200 TP Max. Ramp−up Rate = 3°C/s Max. Ramp−down Rate = 6°C/s tP TL Tsmax 160 140 tL Preheat Area 180 Tsmin ts 120 100 80 60 40 20 0 120 360 240 Time 25°C to Peak Time (s) Profile Feature Pb−Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (t S ) from (Tsmin to Tsmax) 60–120 seconds Ramp−up Rate (t L to t P ) 3°C/seconds max. 217°C Liquidous Temperature (T L ) Time (t L ) Maintained Above (T L ) 60–150 seconds Peak Body Package Temperature 260°C +0°C / –5°C Time (t P ) within 5°C of 260°C 30 seconds Ramp−down Rate (T P to T L ) 6°C/seconds max. Time 25°C to Peak Temperature 8 minutes max. ORDERING INFORMATION Option Order Entry Identifier (Example) No option H11F1M Description S H11F1SM SR2 H11F1SR2M V H11F1VM TV H11F1TVM IEC60747−5−5 approval, 0.4” Lead Spacing SV H11F1SVM IEC60747−5−5 approval, Surface Mount SR2V H11F1SR2VM Standard Through Hole Device Surface Mount Lead Bend Surface Mount; Tape and Reel IEC60747−5−5 approval IEC60747−5−5 approval, Surface Mount, Tape and Reel www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BX ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13449G PDIP6 8.51X6.35, 2.54P DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BY ISSUE A DATE 15 JUL 2019 A B DOCUMENT NUMBER: DESCRIPTION: 98AON13450G PDIP6 8.51x6.35, 2.54P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BZ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13451G PDIP6 8.51X6.35, 2.54P DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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