HGT1N30N60A4D
Data Sheet
December 2001
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT1N30N60A4D is a MOS gated high voltage
switching device combining the best features of a MOSFETs
and a bipolar transistor. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. This
IGBT is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses
are essential. This device has been optimized for high
frequency switch mode power supplies.
Features
• 100kHz Operation At 390V, 20A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . . 58ns at TJ = 125oC
• Low Conduction Loss
Symbol
C
G
Formerly Developmental Type TA49345.
Ordering Information
PART NUMBER
HGT1N30N60A4D
E
PACKAGE
SOT-227
BRAND
30N60A4D
Packaging
NOTE: When ordering, use the entire part number.
JEDEC STYLE SOT-227B
GATE
EMITTER
TAB
(ISOLATED)
COLLECTOR
EMITTER
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
©2001 Fairchild Semiconductor Corporation
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
HGT1N30N60A4D Rev. B
HGT1N30N60A4D
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Isolation Voltage, Any Terminal To Case, t = 1 (Min) . . . . . . . . . . . . . . . . . . . . . . . .VISOL
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Baseplate Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Terminal Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UNITS
V
600
96
39
240
±20
±30
150A at 600V
255
2.0
2500
-55 to 150
1.5
1.7
A
A
A
V
V
W
W/oC
V
oC
N-m
N-m
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
TJ = 25oC, Unless Otherwise Specified
PARAMETER
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
SYMBOL
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
TEST CONDITIONS
IC = 250µA, VGE = 0V
VCE = 600V
IC = 30A,
VGE = 15V
-
-
V
-
250
µA
TJ = 125oC
-
-
2.8
mA
TJ = 25oC
-
1.8
2.7
V
TJ = 125oC
IC = 250µA, VCE = 600V
VGE = ±20V
Current Turn-Off Delay Time
Current Fall Time
trI
td(OFF)I
tfI
Turn-On Energy (Note 2)
EON1
Turn-On Energy (Note 2)
EON2
Turn-Off Energy (Note 3)
EOFF
Current Turn-On Delay Time
td(ON)I
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
trI
td(OFF)I
tfI
1.6
2.0
V
5.2
7.0
V
-
-
±250
nA
-
-
A
IC = 30A, VCE = 300V
-
8.5
-
V
IC = 30A,
VCE = 300V
VGE = 15V
-
225
270
nC
VGE = 20V
-
300
360
nC
-
25
-
ns
-
12
-
ns
-
150
-
ns
-
38
-
ns
-
280
-
µJ
-
600
-
µJ
-
240
350
µJ
-
24
-
ns
VGEP
td(ON)I
4.5
150
Gate to Emitter Plateau Voltage
Current Turn-On Delay Time
UNITS
-
TJ = 150oC, RG = 3Ω, VGE = 15V,
L = 100µH, VCE = 600V
Current Rise Time
MAX
600
SSOA
Qg(ON)
TYP
TJ = 25oC
Switching SOA
On-State Gate Charge
MIN
IGBT and Diode at TJ = 25oC,
ICE = 30A,
VCE = 390V,
VGE = 15V,
RG = 3Ω,
L = 200µH,
Test Circuit (Figure 24)
IGBT and Diode at TJ = 125oC,
ICE = 30A,
VCE = 390V, VGE = 15V,
RG = 3Ω,
L = 200µH,
Test Circuit (Figure 24)
-
11
-
ns
-
180
200
ns
-
58
70
ns
-
280
-
µJ
Turn-On Energy (Note 2)
EON1
Turn-On Energy (Note 2)
EON2
-
1000
1200
µJ
Turn-Off Energy (Note 3)
EOFF
-
450
750
µJ
Diode Forward Voltage
VEC
-
2.2
2.5
V
©2001 Fairchild Semiconductor Corporation
IEC = 30A
HGT1N30N60A4D Rev. B
HGT1N30N60A4D
Electrical Specifications
TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
Diode Reverse Recovery Time
TEST CONDITIONS
trr
Thermal Resistance Junction To Case
RθJC
MIN
TYP
MAX
UNITS
IEC = 30A, dIEC/dt = 200A/µs
-
40
55
ns
IEC = 1A, dIEC/dt = 200A/µs
-
30
42
ns
IGBT
-
-
0.49
oC/W
Diode
-
-
2.0
oC/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Unless Otherwise Specified
VGE = 15V
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
200
TJ = 150oC, R G = 3Ω, VGE = 15V, L = 100µH
150
100
50
0
0
TC , CASE TEMPERATURE (oC)
75oC
VGE
15V
100
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.49oC/W, SEE NOTES
TJ = 125oC, R G = 3Ω, L = 200µH, V CE = 390V
10
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
60
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
fMAX, OPERATING FREQUENCY (kHz)
TC
1
300
400
500
700
600
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
500
10
200
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
300
100
18
900
VCE = 390V, RG = 3Ω, TJ = 125oC
800
16
14
700
ISC
12
600
10
500
400
8
tSC
300
6
4
10
11
12
13
14
200
15
ISC, PEAK SHORT CIRCUIT CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
100
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
HGT1N30N60A4D Rev. B
HGT1N30N60A4D
Unless Otherwise Specified (Continued)
50
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250µs
40
30
20
TJ = 125oC
10
TJ = 25oC
TJ = 150oC
0
0.5
0
1.5
1.0
2.0
2.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
50
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
40
30
20
TJ = 125oC
10
0
0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TJ = 125oC, VGE = 12V, VGE = 15V
2000
1500
1000
0
TJ = 25oC, VGE = 12V, VGE = 15V
0
10
20
30
40
50
1000
800
TJ = 125oC, VGE = 12V OR 15V
600
400
200
TJ = 25oC, VGE = 12V OR 15V
0
10
20
30
40
50
60
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
34
100
RG = 3Ω, L = 200µH, VCE = 390V
RG = 3Ω, L = 200µH, VCE = 390V
TJ = 25oC, TJ = 125oC, VGE = 12V
80
30
trI , RISE TIME (ns)
td(ON)I, TURN-ON DELAY TIME (ns)
2.5
RG = 3Ω, L = 200µH, VCE = 390V
0
60
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
28
26
24
TJ = 125oC, VGE = 15V, VGE = 12V
60
TJ = 25oC, VGE = 12V
40
20
TJ = 25oC, TJ = 125oC, VGE = 15V
22
2.0
1200
ICE , COLLECTOR TO EMITTER CURRENT (A)
32
1.5
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
EOFF , TURN-OFF ENERGY LOSS (µJ)
EON2 , TURN-ON ENERGY LOSS (µJ)
3000
500
1.0
1400
RG = 3Ω, L = 200µH, VCE = 390V
2500
0.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
3500
TJ = 25oC
TJ = 150oC
TJ = 25oC, VGE = 15V
20
0
10
20
30
40
50
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
60
0
0
10
20
30
40
50
60
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
HGT1N30N60A4D Rev. B
HGT1N30N60A4D
Typical Performance Curves
Unless Otherwise Specified (Continued)
70
RG = 3Ω, L = 200µH, VCE = 390V
RG = 3Ω, L = 200µH, VCE = 390V
200
60
VGE = 12V, VGE = 15V, TJ = 125oC
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
220
180
160
TJ = 125oC, VGE = 12V OR 15V
50
40
TJ = 25oC, VGE = 12V OR 15V
30
140
VGE = 12V, VGE = 15V, TJ = 25oC
120
0
10
20
30
40
50
20
60
0
ICE , COLLECTOR TO EMITTER CURRENT (A)
15.0
350
DUTY CYCLE < 0.5%, VCE = 10V
300 PULSE DURATION = 250µs
TJ = 25oC
250
200
TJ = 125oC
TJ = -55oC
100
50
0
7
6
8
9
10
11
VGE, GATE TO EMITTER VOLTAGE (V)
2
ICE = 30A
ICE = 15A
50
75
100
125
TC , CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
©2001 Fairchild Semiconductor Corporation
150
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ICE = 60A
25
60
VCE = 600V
VCE = 400V
10.0
7.5
VCE = 200V
5.0
2.5
0
50
100
150
200
250
FIGURE 14. GATE CHARGE WAVEFORMS
4
0
50
QG , GATE CHARGE (nC)
ETOTAL = EON2 + EOFF
1
40
12.5
0
12
RG = 3Ω, L = 200µH, VCE = 390V, VGE = 15V
3
30
IG(REF) = 1mA, RL = 15Ω, TJ = 25oC
FIGURE 13. TRANSFER CHARACTERISTIC
5
20
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
VGE, GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
150
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
20
TJ = 125oC, L = 200µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
16
12
8
ICE = 60A
4
ICE = 30A
ICE = 15A
0
3
10
100
300
RG, GATE RESISTANCE (Ω)
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
HGT1N30N60A4D Rev. B
HGT1N30N60A4D
C, CAPACITANCE (nF)
10
Unless Otherwise Specified (Continued)
FREQUENCY = 1MHz
8
6
CIES
4
2
COES
CRES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Typical Performance Curves
2.3
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs, TJ = 25oC
2.2
2.1
2.0
ICE = 60A
1.9
ICE = 30A
1.8
ICE = 15A
1.7
9
14
15
16
100
DUTY CYCLE < 0.5%,
PULSE DURATION = 250µs
30
25
dIEC/dt = 200A/µs
90
125oC
trr , RECOVERY TIMES (ns)
IEC , FORWARD CURRENT (A)
13
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
35
25oC
20
15
10
5
125oC trr
80
70
60
125oC ta
50
25oC trr
40
125oC tb
30
25oC ta
20
25oC tb
10
0
0
0.5
1.0
2.0
1.5
0
2.5
10
5
VEC , FORWARD VOLTAGE (V)
IEC = 30A, VCE = 390V
40
125oC tb
30
25oC ta
20
25oC tb
10
0
200
300
400
500
600
700
800
900
dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
©2001 Fairchild Semiconductor Corporation
1000
Qrr , REVERSE RECOVERY CHARGE (nC)
50
25
20
30
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
60
125oC ta
15
IEC , FORWARD CURRENT (A)
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
trr , RECOVERY TIMES (ns)
12
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
0
11
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1400
1200
VCE = 390V
125oC, IF = 40A
1000
125oC, IF = 20A
800
600
25oC, IF = 40A
400
25oC, IF = 20A
200
0
200
400
600
800
1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
HGT1N30N60A4D Rev. B
HGT1N30N60A4D
ZθJC , NORMALIZED THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified (Continued)
100
0.50
0.20
10-1
0.10
0.05
t1
0.02
0.01
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10-2 -5
10
PD
10-4
10-3
10-2
10-1
t2
100
101
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGT1N30N60A4D
DIODE TA49373
90%
10%
VGE
EON2
EOFF
L = 200µH
VCE
RG = 3Ω
90%
+
HGT1N30N60A4D
-
ICE
VDD = 390V
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 25. SWITCHING TEST WAVEFORMS
HGT1N30N60A4D Rev. B
HGT1N30N60A4D
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 25.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM . td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD . A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 25. EON2 is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn-off. All tail losses are included in the calculation for
EOFF; i.e., the collector current equals zero (ICE = 0).
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
©2001 Fairchild Semiconductor Corporation
HGT1N30N60A4D Rev. B
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
