HGTP2N120CN, HGT1S2N120CN
13A, 1200V, NPT Series N-Channel IGBT
Features
Description
• 13A, 1200V, TC = 25°C
The HGTP2N120CN and HGT1S2N120CN are Non-Punch
Through (NPT) IGBT designs. They are new members of the
MOS gated high voltage switching IGBT family. IGBTs combine
the best features of MOSFETs and bipolar transistors. This
device has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.
• 1200V Switching SOA Capability
• Typical Fall Time 360ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
• Avalanche Rated
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.fairchildsemi.com
Formerly Developmental Type TA49313
• Related Literature
• TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Informations
Part Number
Package
Brand
HGTP2N120CN
TO-220AB
2N120CN
HGT1S2N120CN
TO-262
2N120CN
Note: When ordering, use the entire part number. Add the suffix 9A to obtain the TO263AB and TO-252AA variant in tape and reel, e.g., HGT1S2N120CNS9A.
E
COLLECTOR
(FLANGE)
C
C
E
G
C
G
G
COLLECTOR
(FLANGE)
TO-220
TO-262
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,598,461
4,605,948
4,620,211
4,631,564
4,682,195
4,684,413
4,694,313
4,717,679
4,803,533
4,809,045
4,809,047
4,810,665
4,888,627
4,890,143
4,901,127
4,904,609
©2005 Fairchild Semiconductor Corporation
HGTP2N120CN, HGT1S2N120CN Rev. C
4,443,931
4,466,176
1
4,516,143
4,532,534
4,587,713
4,639,754
4,639,762
4,641,162
4,644,637
4,743,952
4,783,690
4,794,432
4,801,986
4,823,176
4,837,606
4,860,080
4,883,767
4,933,740
4,963,951
4,969,027
www.fairchildsemi.com
HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT
March 2005
Symbol
TC = 25°C, Unless Otherwise Specified
Parameter
BVCES
Collector to Emitter Voltage
IC25
IC110
Collector Current Continuous
At TC = 25°C
At TC = 110°C
HGTP2N120CN
HGT1S2N120CN
Units
1200
V
13
7
A
A
ICM
Collector Current Pulsed (Note 1)
20
A
VGES
Gate to Emitter Voltage Continuous
±20
V
VGEM
Gate to Emitter Voltage Pulsed
±30
V
SSOA
Switching SOA Operating Area at TJ = 150°C (Figure 2)
PD
Power Dissipation Total at TC = 25°C
104
W
Power Dissipation Derating TC > 25°C
0.83
W/°C
EAV
Forward Voltage Avalanche Energy (Note 2)
tJ, TSTG
Operating and Storage Junction Temperature Range
TL
TPKG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, see Tech Brief 334
tSC
Short Circuit Withstand Time (Note 3) at VGE = 15V
13A at 1200V
18
mJ
-55 to 150
°C
300
260
°C
°C
8
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at
these or any other conditions above those indicated in the operational sections of this specification is not implied.
Notes:
1. Pulse width limited by maximum junction temperature.
2. ICE = 3A, L = 4mH
3. VCE(PK) = 840V, TJ = 125°C, RG = 51Ω.
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
-
BVCES
Collector to Emitter Breakdown Voltage
IC = 250µA, VGE = 0V
1200
BVECS
Emitter to Collector Breakdown Voltage
IC = 10mA, VGE = 0V
ICES
Collector to Emitter Leakage Current
VCE = 1200V
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 2.6A,
VGE = 15V
Max. Units
-
V
15
-
-
V
TJ = 25°C
-
-
100
µA
TJ = 125°C
-
100
-
µA
TJ = 150°C
-
-
1.0
mA
TJ = 25°C
-
2.05
2.40
V
TJ = 150°C
-
2.75
3.50
V
6.4
6.7
-
V
-
-
±250
nA
13
-
-
A
VGE(TH)
Gate to Emitter Threshold Voltage
IC = 45µA, VCE = VGE
IGES
Gate to Emitter Leakage Current
VGE = ±20V
SSOA
Switching SOA
TJ = 150°C, RG = 51Ω, VGE = 15V
L = 5mH, VCE(PK) = 1200V
VGEP
Gate to Emitter Plateau Voltage
IC = 2.6A, VCE = 600V
-
10.2
-
V
Qg(ON)
On-State Gate Charge
IC = 2.6A,
VCE = 600V
VGE = 15V
-
30
36
nC
VGE = 20V
-
36
43
nC
HGTP2N120CN, HGT1S2N120CN Rev. C
2
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HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT
Absolute Maximum Ratings
Symbol
TC = 25°C unless otherwise noted (Continued)
Parameter
td(ON)l
Current Trun-On Delay Time
trl
Current Rise Time
td(OFF)l
Curent Turn-Off Delay Time
tfl
Current Fall Time
EON1
Turn-On Energy (Note 4)
EON2
Turn-On Energy (Note 4)
EOFF
Turn-Off Energy (Note 5)
td(ON)l
Curent Turn-On Delay Time
Test Conditions
IGBT and Diode at TJ = 25°C
ICE = 2.6A
VCE = 960V
VGE = 15V
RG = 51Ω
L = 5mH
Test Circuit (Figure 18)
IGBT and Diode at TJ = 150°C
ICE = 2.6A
VCE = 960V
VGE = 15V
RG = 51Ω
L = 5mH
Test Circuit (Figure 18)
Min.
Typ.
Max. Units
-
25
30
ns
-
11
15
ns
-
205
220
ns
-
260
320
ns
-
96
-
µJ
-
425
590
µJ
-
355
390
µJ
-
21
25
ns
trl
Current Rise Time
td(OFF)l
Curent Turn-Off Delay Time
tfl
Current Fall Time
EON1
Turn-On Energy (Note 4)
EON2
Turn-On Energy (Note 4)
EOFF
Turn-Off Energy (Note 5)
RθJC
Thermal Resistance Junction to Case
-
-
11
15
ns
-
225
240
ns
-
360
420
ns
-
96
-
µJ
-
800
1100
µJ
-
530
580
µJ
-
1.20
°C/W
Notes:
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical
diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18.
5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector
current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method
produces the true total Turn-Off Energy Loss.
HGTP2N120CN, HGT1S2N120CN Rev. C
3
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HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT
Electrical Characteristics
Figure 2. Minimum Switching Safe Operating
Area
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 1. DC Collector Current vs
Case Temperature
VGE = 15V
12
10
8
6
4
2
0
25
50
75
100
125
150
16
TJ = 150oC, RG = 51Ω, VGE = 15V, L = 5mH
14
12
10
8
6
4
2
0
0
o
TC , CASE TEMPERATURE ( C)
TC = 75oC,VGE = 15V
IDEAL DIODE
TC
VGE
75oC 15V
75oC 12V
50
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 1.2oC/W, SEE NOTES
10
1
TC
VGE
110oC 15V
o
110 C 12V
2
3
4
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
TC = 25oC
6
TC = -55oC
4
TC = 150oC
2
DUTY CYCLE
