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HGTD7N60C3S, HGTP7N60C3
Data Sheet
December 2001
14A, 600V, UFS Series N-Channel IGBTs
Features
The HGTD7N60C3S and HGTP7N60C3 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25oC
and 150oC.
• 14A, 600V at TC = 25oC
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays and
contactors.
Packaging
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
Formerly Developmental Type TA49115.
Ordering Information
PART NUMBER
COLLECTOR (FLANGE)
PACKAGE
BRAND
HGTD7N60C3S
TO-252AA
G7N60C
HGTP7N60C3
TO-220AB
G7N60C3
JEDEC TO-252AA
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e.
HGTD7N60C3S9A.
GATE
COLLECTOR
(FLANGE)
EMITTER
Symbol
C
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTD7N60C3S, HGTP7N60C3 Rev. B
HGTD7N60C3S, HGTP7N60C3
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
HGTD7N60C3S HGTP7N60C3
600
UNITS
V
14
7
56
±20
±30
40A at 480V
60
0.48
100
-40 to 150
260
1
8
A
A
A
V
V
W
W/oC
mJ
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 50Ω.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
BVECS
IC = 3mA, VGE = 0V
16
30
-
V
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
©2001 Fairchild Semiconductor Corporation
ICES
VCE(SAT)
VCE = BVCES
TC = 25oC
-
-
250
µA
VCE = BVCES
TC = 150oC
-
-
2.0
mA
IC = IC110,
VGE = 15V
TC = 25oC
-
1.6
2.0
V
TC = 150oC
-
1.9
2.4
V
TC = 25oC
3.0
5.0
6.0
V
-
-
±250
nA
VCE(PK) = 480V
40
-
-
A
VCE(PK) = 600V
6
-
-
A
IC = IC110, VCE = 0.5 BVCES
-
8
-
V
IC = IC110,
VCE = 0.5 BVCES
VGE = 15V
-
23
30
nC
VGE = 20V
-
30
38
nC
VGE(TH)
IC = 250µA,
VCE = VGE
IGES
VGE = ±25V
SSOA
TJ = 150oC
RG = 50Ω
VGE = 15V
L = 1mH
VGEP
QG(ON)
HGTD7N60C3S, HGTP7N60C3 Rev. B
HGTD7N60C3S, HGTP7N60C3
Electrical Specifications
TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
TEST CONDITIONS
MIN
TYP
MAX
UNITS
TJ = 150oC
ICE = IC110
VCE(PK) = 0.8 BVCES
VGE = 15V
RG= 50Ω
-
8.5
-
ns
-
11.5
-
ns
-
350
400
ns
L = 1.0mH
-
140
275
ns
µJ
Current Fall Time
tfI
Turn-On Energy
EON
-
165
-
Turn-Off Energy (Note 3)
EOFF
-
600
-
µJ
2.1
oC/W
Thermal Resistance
RθJC
-
-
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). The HGTD7N60C3S and HGTP7N60C3 were tested per JEDEC standard No.
24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TurnOn losses include diode losses.
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
DUTY CYCLE