NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast
Diode
35 A, 1200 V
HGTG10N120BND
The HGTG10N120BND is a Non−Punch Through (NPT) IGBT
design. This is a new member of the MOS gated high voltage
switching IGBT family. IGBTs combine the best features
of MOSFETs and bipolar transistors. This device has the high input
impedance of a MOSFET and the low on−state conduction loss
of a bipolar transistor. The IGBT used is the development type
TA49290. The Diode used is the development type TA49189.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power supplies
and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49302.
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Features
•
•
•
•
•
•
35 A, 1200 V, TC = 25°C
1200 V Switching SOA Capability
Typical Fall Time: 140 ns at TJ = 150°C
Short Circuit Rating
Low Conduction Loss
This is Pb−Free Device
TO−247−3LD
CASE 340CK
MARKING DIAGRAMS
$Y&Z&3&K
10N120BND
$Y
&Z
&3
&K
10N120BND
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
Part Number
Package
Brand
HGTG10N120BND
TO−247
10N120BND
NOTE: When ordering, use the entire part number.
© Semiconductor Components Industries, LLC, 2001
December, 2020 − Rev. 2
1
Publication Order Number:
HGTG10N120BND/D
HGTG10N120BND
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless Otherwise Specified)
Symbol
HGTG10N120BND
Units
BVCES
1200
V
IC25
IC110
35
17
A
A
ICM
80
A
Gate to Emitter Voltage Continuous
VGES
±20
V
Gate to Emitter Voltage Pulsed
VGEM
±30
V
Switching Safe Operating Area at TJ = 150°C (Figure 2)
SSOA
55 A at 1200 V
PD
298
2.38
W
W/°C
Description
Collector to Emitter Voltage
Collector Current Continuous
At TC = 25°C
At TC = 110°C
Collector Current Pulsed (Note 1)
Power Dissipation Total at TC = 25°C
Power Dissipation Derating TC > 25°C
Operating and Storage Junction Temperature Range
TJ, TSTG
−55 to 150
°C
Maximum Lead Temperature for Soldering
TL
260
°C
Short Circuit Withstand Time (Note 2) at VGE = 15 V
tSC
8
ms
Short Circuit Withstand Time (Note 2) at VGE = 12 V
tSC
15
ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 840 V, TJ = 125°C, RG = 10 Ω.
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2
HGTG10N120BND
ELECTRICAL SPECIFICATIONS (TJ = 25, °C Unless Otherwise Specified)
Parameter
Symbol
Collector to Emitter Breakdown Voltage
BVCES
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
ICES
VCE(SAT)
VGE(TH)
Min
Typ
Max
Units
1200
−
−
V
TC = 25°C
−
−
250
mA
TC = 125°C
−
170
−
mA
TC = 150°C
−
−
2.5
mA
TC = 25°C
−
2.45
2.7
V
TC = 150°C
−
3.7
4.2
V
6.0
6.8
−
V
IC = 250 mA, VGE = 0 V
VCE = 1200 V
IC = 10 A,
VGE = 15 V
IC = 90 mA, VCE = VGE
VGE = ±20 V
−
−
±250
nA
Switching SOA
SSOA
TJ = 150°C, RG = 10 Ω, VGE = 15 V,
L = 400 mH, VCE(PK) = 1200 V
55
−
−
A
Gate to Emitter Plateau Voltage
VGEP
IC = 10 A, VCE = 600 V
−
10.4
−
V
IC = 10 A,
VCE = 600 V
VGE = 15 V
−
100
120
nC
VGE = 20 V
−
130
150
nC
IGBT and Diode at TJ = 25°C,
ICE = 10 A,
VCE = 960 V,
VGE = 15 V,
RG = 10 Ω,
L = 2 mH,
Test Circuit (Figure 20)
−
23
26
ns
−
11
15
ns
−
165
210
ns
−
100
140
ns
−
0.85
1.05
mJ
−
0.8
1.0
mJ
IGBT and Diode at TJ = 150°C,
ICE = 10 A,
VCE = 960 V,
VGE = 15 V,
RG = 10 Ω,
L = 2 mH,
Test Circuit (Figure 20)
−
21
25
ns
−
11
15
ns
−
190
250
ns
−
140
200
ns
−
1.75
2.3
mJ
−
1.1
1.4
mJ
IEC = 10 A
−
2.55
3.2
V
IEC = 10 A, dlEC/dt = 200 A/ms
−
57
70
ns
IEC = 1 A, dlEC/dt = 200 A/ms
−
32
40
ns
IGBT
−
−
0.42
°C/W
Diode
−
−
1.25
°C/W
On−State Gate Charge
Current Turn−On Delay Time
Current Rise Time
Current Turn−Off Delay Time
Current Fall Time
IGES
Test Conditions
QG(ON)
td(ON)I
trI
td(OFF)I
tfI
Turn−On Energy
EON
Turn−Off Energy (Note 3)
EOFF
Current Turn−On Delay Time
td(ON)I
Current Rise Time
Current Turn−Off Delay Time
Current Fall Time
trI
td(OFF)I
tfI
Turn−On Energy
EON
Turn−Off Energy (Note 3)
EOFF
Diode Forward Voltage
VEC
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
trr
RθJC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Turn−Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24−1 Method for
Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss.
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3
HGTG10N120BND
TYPICAL PERFORMANCE CHARACTERISTICS
VGE = 15V
30
25
20
15
10
5
0
50
75
100
125
150
TJ = 1505C, RG = 10 W, VG = 15 V, L = 400 mH
40
30
20
10
0
400
600
800
1000
1200
1400
Figure 2. MINIMUM SWITCHING SAFE
OPERATING AREA
50
TC = 75oC, VGE = 15 V, IDEAL DIODE
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
10 fMAX2 = (PD − PC) / (EON + EOFF)
TC
PC = CONDUCTION DISSIPATION 75oC
75oC
(DUTY FACTOR = 50%)
110 oC
RjJC = 0.42oC/W, SEE NOTES
110 oC
2
5
VGE
15 V
12 V
15 V
12 V
10
20
25
250
VCE = 840 V, RG = 10 W, TJ = 1255C
20
200
tSC
ISC
15
100
5
12
40
30
TC = 255C
TC = −555C
20
TC = 1505C
10
0
2
4
6
8
10
14
15
16
50
Figure 4. SHORT CIRCUIT WITHSTAND TIME
ICE, COLLECTOR TO EMITTER CURRENT (A)
DUTY CYCLE
