HGTG12N60B3

HGTG12N60B3 Data Sheet August 2003 27A, 600V, UFS Series N-Channel IGBTs Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. • 27A, 600V, TC = 25oC • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Packaging JEDEC STYLE TO-247 Formerly developmental type TA49171. E C G Ordering Information PART NUMBER HGTG12N60B3 PACKAGE TO-247 BRAND G12N60B3 NOTE: When ordering, use the entire part number. Symbol COLLECTOR (BOTTOM SIDE METAL) C G E FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2003 Fairchild Semiconductor Corporation HGTG12N60B3 Rev. C1 HGTG12N60B3 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG12N60B3 UNITS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 27 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 12 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 110 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±30 V Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 96A at 600V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 104 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300 260 oC oC Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 5 µs Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 10 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 25Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage PARAMETER BVCES IC = 250µA, VGE = 0V 600 - - V Emitter to Collector Breakdown Voltage BVECS IC = -10mA, VGE = 0V V Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current SYMBOL ICES VCE(SAT) VGE(TH) IGES TEST CONDITIONS VCE = 600V IC = 12A VGE = 15V 20 - - TC = 25oC - - 250 µA TC = 150oC - - 2.0 mA TC = 25oC - 1.6 2.1 V TC = 150oC - 1.7 2.5 V 4.5 4.9 6.0 V IC = 250µA, VCE = VGE VGE = ±20V - - ±250 nA 96 - - A IC = 12A, VCE = 0.5 BVCES - 7.3 - V - 51 60 nC Switching SOA SSOA TJ = 150oC, RG = 25Ω, VGE = 15V L = 100µH, VCE = 600V Gate to Emitter Plateau Voltage VGEP On-State Gate Charge Qg(ON) IC = 12A VCE = 300V Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC ICE = 12A VCE = 480V VGE = 15V RG = 25Ω L = 1mH Test Circuit (Figure 17) Current Rise Time Current Turn-Off Delay Time Current Fall Time trI td(OFF)I tfI VGE = 15V VGE = 20V - 68 78 nC - 26 - ns - 23 - ns - 150 - ns - 62 - ns Turn-On Energy (Note 4) EON1 - 150 - µJ Turn-On Energy (Note 4) EON2 - 304 350 µJ Turn-Off Energy (Note 3) EOFF - 250 350 µJ ©2003 Fairchild Semiconductor Corporation HGTG12N60B3 Rev. C1 HGTG12N60B3 Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI TEST CONDITIONS IGBT and Diode at TJ = 150oC ICE = 12A VCE = 480V VGE = 15V RG = 25Ω L = 1mH Test Circuit (Figure 17) MIN TYP MAX UNITS - 22 - ns - 23 - ns - 280 295 ns - 112 175 ns - 165 - µJ µJ Turn-On Energy (Note 4) EON1 Turn-On Energy (Note 4) EON2 - 500 525 Turn-Off Energy (Note 3) EOFF - 660 800 µJ 1.2 oC/W Thermal Resistance Junction To Case RθJC - - NOTES: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17. Unless Otherwise Specified ICE , DC COLLECTOR CURRENT (A) 30 VGE = 15V 25 20 15 10 5 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE ©2003 Fairchild Semiconductor Corporation 150 ICE , COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 100 TJ = 150oC, RG = 25Ω, VGE = 15V, L = 100µH 90 80 70 60 50 40 30 20 10 0 0 100 200 300 400 500 600 700 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA HGTG12N60B3 Rev. C1 HGTG12N60B3 TJ = 150oC, RG = 25Ω, L = 1mH, V CE = 480V 100 TC VGE 75oC 75oC 110oC 110oC 15V 10V 15V 10V 10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 1.2oC/W, SEE NOTES 1 2 10 3 20 30 16 14 90 ISC 12 80 10 70 8 60 50 6 tSC 40 4 2 10 60 TC = 150oC 40 TC = 25oC DUTY CYCLE