HGTG18N120BN

HGTG18N120BN Data Sheet December 2001 54A, 1200V, NPT Series N-Channel IGBT Features The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. • 54A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . . . 140ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. • Avalanche Rated • Temperature Compensating SABER™ Model www.fairchildsemi.com Packaging Formerly Developmental Type TA49288. JEDEC STYLE TO-247 Ordering Information E PART NUMBER PACKAGE C BRAND G HGTG18N120BN TO-247 G18N120BN NOTE: When ordering, use the entire part number. Symbol C G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2001 Fairchild Semiconductor Corporation HGTG18N120BN Rev. B HGTG18N120BN Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 3) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 3) at VGE = 12V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC HGTG18N120BN 1200 UNITS V 54 26 160 ±20 ±30 100A at 1200V 390 3.12 125 -55 to 150 260 8 15 A A A V V W W/oC mJ oC oC µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. ICE = 25A, L = 400µH, TJ = 25oC. 3. VCE(PK) = 960V, TJ = 125oC, RG = 3Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 1200 - - V Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 - - V - - 250 µA - 250 - µA - - 3 mA - 2.45 2.7 V - 3.8 4.2 V 6.0 7.0 - V - - ±250 nA 100 - - A - 10.5 - V VGE = 15V - 165 200 nC VGE = 20V - 220 250 nC - 23 28 ns - 17 22 ns - 170 200 ns - 90 140 ns - 0.8 1.0 mJ Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current ICES VCE(SAT) VGE(TH) IGES VCE = 1200V IC = 18A, VGE = 15V TC = 25oC TC = 125oC TC = 150oC TC = 25oC TC = 150oC IC = 150µA, VCE = VGE VGE = ±20V Switching SOA SSOA TJ = 150oC, RG = 3Ω, VGE = 15V, L = 200µH, VCE(PK) = 1200V Gate to Emitter Plateau Voltage VGEP IC = 18A, VCE = 600V On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time QG(ON) td(ON)I trI td(OFF)I tfI IC = 18A, VCE = 600V IGBT and Diode at TJ = 25oC ICE = 18A VCE = 960V VGE = 15V RG = 3Ω L = 1mH Test Circuit (Figure 18) Turn-On Energy (Note 5) EON1 Turn-On Energy (Note 5) EON2 - 1.9 2.4 mJ Turn-Off Energy (Note 4) EOFF - 1.8 2.2 mJ ©2001 Fairchild Semiconductor Corporation HGTG18N120BN Rev. B HGTG18N120BN Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI TEST CONDITIONS IGBT and Diode at TJ = 150oC ICE = 18A VCE = 960V VGE = 15V RG = 3Ω L = 1mH Test Circuit (Figure 18) MIN TYP MAX UNITS - 21 26 ns - 17 22 ns - 205 240 ns - 140 200 ns - 0.85 1.1 mJ Turn-On Energy (Note 5) EON1 Turn-On Energy (Note 5) EON2 - 3.7 4.9 mJ Turn-Off Energy (Note 4) EOFF - 2.6 3.1 mJ Thermal Resistance Junction To Case RθJC - - 0.32 oC/W NOTES: 4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Fig. 18. Unless Otherwise Specified VGE = 15V 50 40 30 20 10 0 25 50 75 100 125 150 120 TJ = 150oC, RG = 3Ω, VGE = 15V, L = 200µH 100 80 60 40 20 0 0 TC , CASE TEMPERATURE (oC) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX, OPERATING FREQUENCY (kHz) TC = 75oC, VGE = 15V, IDEAL DIODE 100 50 1 5 10 20 VGE 15V 12V 15V 12V 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation 600 800 1000 1400 1200 FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA TJ = 150oC, RG = 3Ω, L = 1mH, V CE = 960V fMAX1 = 0.05 / (td(OFF)I + td(ON)I) TC fMAX2 = (PD - PC) / (EON2 + EOFF) o PC = CONDUCTION DISSIPATION 75oC 75 C (DUTY FACTOR = 50%) 110oC RØJC = 0.32oC/W, SEE NOTES 110oC 400 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 10 200 40 30 300 VCE = 960V, RG = 3Ω, TJ = 125oC 25 250 ISC 200 20 150 15 tSC 100 10 5 12 13 14 15 16 50 ISC, PEAK SHORT CIRCUIT CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 60 ICE , COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 4. SHORT CIRCUIT WITHSTAND TIME HGTG18N120BN Rev. B HGTG18N120BN Unless Otherwise Specified (Continued) 80 60 TC = 25oC TC = -55oC 40 TC = 150oC 20 DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250µs 0 0 2 4 6 8 10 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 100 TC = 150oC 60 40 20 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs 0 0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 6 8 10 4.5 RG = 3Ω, L = 1mH, VCE = 960V EOFF , TURN-OFF ENERGY LOSS (mJ) EON2 , TURN-ON ENERGY LOSS (mJ) 4 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 10 TJ = 150oC, VGE = 12V, VGE = 15V 8 6 4 2 TJ = 25oC, VGE = 12V, VGE = 15V RG = 3Ω, L = 1mH, VCE = 960V 4.0 TJ = 150oC, VGE = 12V OR 15V 3.5 3.0 2.5 2.0 TJ = 25oC, VGE = 12V OR 15V 1.5 1.0 0.5 0 5 10 15 20 25 30 35 5 40 ICE , COLLECTOR TO EMITTER CURRENT (A) 40 10 20 25 30 35 40 FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 120 RG = 3Ω, L = 1mH, VCE = 960V RG = 3Ω, L = 1mH, VCE = 960V 100 35 15 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT TJ = 25oC, TJ = 150oC, VGE = 12V trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) 2 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 12 TC = 25oC TC = -55oC 80 30 25 20 TJ = 25oC, TJ = 150oC, VGE = 12V 80 60 40 20 TJ = 25oC OR TJ = 150oC, VGE = 15V TJ = 25oC, TJ = 150oC, VGE = 15V 15 0 5 10 15 20 25 30 35 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation 40 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT HGTG18N120BN Rev. B HGTG18N120BN Typical Performance Curves 250 RG = 3Ω, L = 1mH, VCE = 960V RG = 3Ω, L = 1mH, VCE = 960V 225 300 200 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 350 Unless Otherwise Specified (Continued) VGE = 12V, VGE = 15V, TJ = 150oC 250 200 175 TJ = 150oC, VGE = 12V OR 15V 150 125 100 75 150 VGE = 12V, VGE = 15V, TJ = 25oC 25 100 5 10 15 25 20 TJ = 25oC, VGE = 12V OR 15V 50 30 35 5 40 20 DUTY CYCLE < 0.5%, VCE = 20V PULSE DURATION = 250µs 150 100 TC = 25oC 50 TC = 150oC 15 TC = -55oC 6 15 VCE = 1200V 40 VCE = 800V 10 VCE = 400V 5 8 7 9 10 11 12 13 14 15 0 50 5 CIES 4 3 CRES COES 0 10 15 20 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ©2001 Fairchild Semiconductor Corporation 25 ICE, COLLECTOR TO EMITTER CURRENT (A) FREQUENCY = 1MHz 5 200 150 FIGURE 14. GATE CHARGE WAVEFORMS 6 1 100 QG , GATE CHARGE (nC) FIGURE 13. TRANSFER CHARACTERISTIC C, CAPACITANCE (nF) 35 IG(REF) = 2mA, RL = 33.3Ω, TC = 25oC VGE, GATE TO EMITTER VOLTAGE (V) 0 30 0 0 2 25 20 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT VGE, GATE TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 200 10 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) 30 DUTY CYCLE < 0.5%, TC = 110oC PULSE DURATION = 250µs 25 VGE = 15V OR 12V 20 VGE = 10V 15 10 5 0 0 1 2 3 4 5 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE HGTG18N120BN Rev. B HGTG18N120BN ZθJC , NORMALIZED THERMAL RESPONSE Typical Performance Curves Unless Otherwise Specified (Continued) 100 0.5 0.2 0.1 10-1 0.05 0.02 t1 DUTY FACTOR, D = t1 / t2 0.01 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-2 10-5 PD 10-4 10-3 10-2 t2 10-1 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGTG18N120BND 90% 10% VGE EON2 EOFF L = 1mH VCE RG = 3Ω 90% + - ICE VDD = 960V 10% td(OFF)I tfI trI td(ON)I FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation FIGURE 19. SWITCHING TEST WAVEFORMS HGTG18N120BN Rev. B HGTG18N120BN Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2001 Fairchild Semiconductor Corporation fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2 . EON2 and EOFF are defined in the switching waveforms shown in Figure 19. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). HGTG18N120BN Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET  VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4