SMPS Series N-Channel
IGBT with Anti-Parallel
Hyperfast Diode
600 V
HGTG20N60A4D
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The HGTG20N60A4D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a MOSFET
and the low on−state conduction loss of a bipolar transistor. The much
lower on−state voltage drop varies only moderately between 25°C and
150°C. The IGBT used is the development type TA49339. The diode
used in anti−parallel is the development type TA49372.
This IGBT is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses are
essential. This device has been optimized for high frequency switch
mode power supplies.
Formerly Developmental Type TA49341.
C
G
E
EC
COLLECTOR
(FLANGE)
Features
•
•
•
•
•
•
•
G
>100 kHz Operation 390 V, 20 A
200 kHz Operation 390 V, 12 A
600 V Switching SOA Capability
Typical Fall Time 55 ns at TJ = 125°C
Low Conduction Loss
Temperature Compensating Saber™ Model
This is a Pb−Free Device
TO−247−3LD SHORT LEAD
CASE 340CK
JEDEC STYLE
MARKING DIAGRAM
$Y&Z&3&K
20N60A4D
$Y
&Z
&3
&K
20N60A4D
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
© Semiconductor Components Industries, LLC, 2009
April, 2020 − Rev. 3
1
Publication Order Number:
HGTG20N60A4D/D
HGTG20N60A4D
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
Parameter
Symbol
HGTG20N60A4D
Unit
BVCES
600
V
IC25
IC110
70
40
A
A
ICM
280
A
IFM110
20
A
IFM
80
A
Gate to Emitter Voltage Continuous
VGES
±20
V
Gate to Emitter Voltage Pulsed
VGEM
±30
V
Switching Safe Operating Area at TJ = 150°C, (Figure 2)
SSOA
100 A at 600 V
Collector to Emitter Voltage
Collector Current Continuous
At TC = 25°C
At TC = 110°C
Collector Current Pulsed (Note 1)
Diode Continuous Forward Current
Diode Maximum Forward Current
Power Dissipation Total at TC = 25°C
PD
290
W
2.32
W/°C
TJ, TSTG
−55 to 150
°C
TL
260
°C
Power Dissipation Derating TC > 25°C
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Symbol
BVCES
ICES
Test Condition
Min
Typ
Max
Unit
600
−
−
V
TJ = 25°C
−
−
250
mA
TJ = 125°C
−
−
2.0
mA
TJ = 25°C
−
1.8
2.7
V
IC = 250 mA, VGE = 0 V
VCE = 600 V
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = 20 A, VGE = 15 V
Gate to Emitter Threshold Voltage
VGE(TH)
IC = 250 mA, VCE = 600 V
TJ = 125°C
Gate to Emitter Leakage Current
IGES
VGE = ±20 V
±250
nA
−
A
−
8.6
−
V
VGE = 15 V
−
142
162
nC
VGE = 20 V
−
182
210
nC
−
15
−
ns
−
12
−
ns
−
73
−
ns
−
32
−
ns
−
105
−
mJ
−
280
350
mJ
−
150
200
mJ
−
15
21
ns
−
13
18
ns
−
105
135
ns
−
55
73
ns
VGEP
IC = 20 A, VCE = 300 V
On−State Gate Charge
Qg(ON)
IC = 20 A, VCE = 300 V
Current Turn−On Delay Time
td(ON)I
IGBT and Diode at TJ = 25°C,
ICE = 20 A,
VCE = 390 V,
VGE = 15 V,
RG = 3 W,
L = 500 mH,
Test Circuit Figure 24
Current Fall Time
tfI
Turn−On Energy (Note 3)
EON1
Turn−On Energy (Note 3)
EON2
Turn−Off Energy (Note 2)
EOFF
Current Turn−On Delay Time
td(ON)I
Current Rise Time
Current Turn−Off Delay Time
Current Fall Time
trI
td(OFF)I
tfI
V
−
Gate to Emitter Plateau Voltage
trI
V
7.0
−
TJ = 150°C, RG = 3 W, VGE = 15 V,
L = 100 mH, VCE = 600 V
td(OFF)I
2.0
5.5
−
SSOA
Current Rise Time
1.6
100
Switching SOA
Current Turn−Off Delay Time
−
4.5
IGBT and Diode at TJ = 125°C,
ICE = 20 A,
VCE = 390 V,
VGE = 15 V,
RG = 3 W,
L = 500 mH,
Test Circuit Figure 24
Turn−On Energy (Note 3)
EON1
−
115
−
mJ
Turn−On Energy (Note 3)
EON2
−
510
600
mJ
Turn−Off Energy (Note 2)
EOFF
−
330
500
mJ
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2
HGTG20N60A4D
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued)
Parameter
Symbol
Diode Forward Voltage
Test Condition
VEC
Diode Reverse Recovery Time
trr
Thermal Resistance Junction To Case
RqJC
Min
Typ
Max
Unit
IEC = 20 A
−
2.3
−
V
IEC = 20 A, dIEC/dt = 200 A/ms
−
35
−
ns
IEC = 1 A, dIEC/dt = 200 A/ms
−
26
−
ns
IGBT
−
−
0.43
°C/W
Diode
−
−
1.9
°C/W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Turn−Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for
Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss.
3. Values for two Turn−On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn−on loss of the IGBT only. EON2
is the turn−on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified
in Figure 20.
TYPICAL PERFORMANCE CURVES (unless otherwise specified)
120
VGE = 15 V
80
PACKAGE LIMIT
60
40
20
0
25
75
50
100
125
TJ = 150°C, RG = 3 W, VGE = 15 V, L = 100 mH
100
80
60
40
20
0
150
0
TC, CASE TEMPERATURE (°C)
TC
75°C
VGE
15 V
300
100
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD − PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.43°C/W, SEE NOTES
TJ = 125°C, RG = 3 W, L = 500 mH, VCE = 390 V
40
5
10
20
30
200
300
400
500
600
700
Figure 2. MINIMUM SWITCHING SAFE
OPERATING AREA
tSC, SHORT CIRCUIT WITHSTAND
TIME (ms)
fMAX, OPERATING FREQUENCY (kHz)
Figure 1. DC COLLECTOR CURRENT vs.
CASE TEMPERATURE
500
100
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
40
14
VCE = 390 V, RG = 3 W, TJ = 125°C
400
12
I SC
10
300
6
250
t SC
0
10
200
150
2
ICE, COLLECTOR TO EMITTER CURRENT (A)
350
8
4
50
450
11
12
13
14
100
15
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 3. OPERATING FREQUENCY vs.
COLLECTOR TO EMITTER CURRENT
Figure 4. SHORT CIRCUIT WITHSTAND TIME
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3
ISC, PEAK SHORT CIRCUIT CURRENT (A)
DIE CAPABILITY
ICE, COLLECTOR TO EMITTER
CURRENT (A)
ICE, DC COLLECTOR CURRENT (A)
100
HGTG20N60A4D
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
100
DUTY CYCLE < 0.5%, VGE = 12 V
PULSE DURATION = 250 ms
ICE, COLLECTOR TO EMITTER
CURRENT (A)
ICE, COLLECTOR TO EMITTER
CURRENT (A)
100
80
60
40
TJ = 125°C
20
0
TJ = 25°C
TJ = 150°C
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
DUTY CYCLE < 0.5%, VGE = 15 V
PULSE DURATION = 250 ms
80
60
40
TJ = 125°C
20
0
3.2
0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
EOFF, TURN−OFF ENERGY LOSS (mJ)
EON2, TURN−ON ENERGY LOSS (mJ)
RG = 3 W, L = 500 mH, VCE = 390 V
TJ = 125°C, VGE = 12 V, VGE = 15 V
800
600
400
200
0
0
TJ = 25°C, VGE = 12 V, VGE = 15 V
10
15
20
25
30
35
40
800
700
500
trI, RISE TIME (ns)
td(ON)I, TURN−ON DELAY TIME (ns)
RG = 3 W, L = 500 mH, VCE = 390 V
TJ = 125°C, VGE = 12 V or 15 V
200
100
0
0
TJ = 25°C, VGE = 12 V or 15 V
10
15
16
14
TJ = 25°C or TJ = 125°C, VGE = 15 V
10
28
25
30
25
30
35
40
TJ = 125°C or TJ = 25°C, VGE = 12 V
24
20
16
12
TJ = 25°C or TJ = 125°C, VGE = 15 V
8
20
20
RG = 3 W, L = 500 mH, VCE = 390 V
32
18
15
2.8
300
36
TJ = 25°C or TJ = 125°C, VGE = 12 V
10
2.4
Figure 8. TURN−OFF ENERGY LOSS vs.
COLLECTOR TO EMITTER CURRENT
RG = 3 W, L = 500 mH, VCE = 390 V
5
2.0
ICE, COLLECTOR TO EMITTER CURRENT (A)
22
8
1.6
400
Figure 7. TURN−ON ENERGY LOSS vs.
COLLECTOR TO EMITTER CURRENT
12
1.2
600
ICE, COLLECTOR TO EMITTER CURRENT (A)
20
0.8
Figure 6. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
1200
1000
0.4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
1400
TJ = 25°C
TJ = 150°C
35
4
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
5
10
15
20
25
30
35
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 9. TURN−ON DELAY TIME vs. COLLECTOR
TO EMITTER CURRENT
Figure 10. TURN−ON RISE TIME vs. COLLECTOR
TO EMITTER CURRENT
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HGTG20N60A4D
120
80
RG = 3 W, L = 500 mH, VCE = 390 V
110
VGE = 12 V, VGE = 15 V, TJ = 125°C
100
90
80
VGE = 12 V, VGE = 15 V, TJ = 25°C
70
60
RG = 3 W, L = 500 mH, VCE = 390 V
72
tfI, FALL TIME (ns)
td(OFF)I, TURN−OFF DELAY TIME (ns)
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
64
TJ = 125°C, VGE = 12 V or 15 V
56
48
40
TJ = 25°C, VGE = 12 V or 15 V
32
24
5
10
15
20
25
30
35
16
40
5
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER
CURRENT (A)
DUTY CYCLE < 0.5%, VCE = 10 V
PULSE DURATION = 250 ms
200
160
120
TJ = 25°C
80
TJ = 125°C
TJ = −55°C
40
0
6
7
8
9
11
10
15
12
16
12
VCE = 600 V
10
ICE = 30 A
1.0
0.8
ICE = 20 A
0.6
0.4
ICE = 10 A
0.2
0
25
50
75
100
125
40
VCE = 400 V
VCE = 200 V
6
4
2
0
0
20
40
60
80
100
120
140
160
Figure 14. GATE CHARGE WAVEFORMS
RG = 3 W, L = 500 mH, VCE = 390 V, VGE = 15 V
ETOTAL = EON2 + EOFF
1.2
35
QG, GATE CHARGE (nC)
ETOTAL, TOTAL SWITCHING
ENERGY LOSS (mJ)
ETOTAL, TOTAL SWITCHING
ENERGY LOSS (mJ)
1.4
30
8
Figure 13. TRANSFER CHARACTERISTIC
1.6
25
IG(REF) = 1 mA, RL = 15 W, TJ = 25°C
14
VGE, GATE TO EMITTER VOLTAGE (V)
1.8
20
Figure 12. FALL TIME vs. COLLECTOR TO
EMITTER CURRENT
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 11. TURN−OFF DELAY TIME vs.
COLLECTOR TO EMITTER CURRENT
240
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
ICE = 30 A
1
ICE = 20 A
ICE = 10 A
0.1
150
TJ = 125°C L = 500 mH, VCE = 390 V, VGE = 15 V
ETOTAL = EON2 + EOFF
TC, CASE TEMPERATURE (°C)
3
10
100
RG, GATE RESISTANCE (W)
Figure 15. TOTAL SWITCHING LOSS vs.
CASE TEMPERATURE
Figure 16. TOTAL SWITCHING LOSS vs.
GATE RESISTANCE
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5
1000
HGTG20N60A4D
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
2.2
FREQUENCY = 1 MHz
VCE, COLLECTOR TO EMITTER
VOLTAGE (V)
C, CAPACITANCE (nF)
5
4
3
CIES
2
COES
1
0
CRES
0
20
40
60
80
DUTY CYCLE < 0.5%, TJ = 25°C
PULSE DURATION = 250 ms,
2.1
2.0
ICE = 30 A
ICE = 20 A
1.9
1.8
ICE = 10 A
1.7
8
100
9
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
90
DUTY CYCLE < 0.5%
PULSE DURATION = 250 ms
25
20
125°C
15
25°C
10
5
0
0
0.5
1.0
1.5
2.0
40
30
25°C trr
20
25°C ta
10
25°C tb
0
Qrr, REVERSE RECOVERY
CHARGE (nc)
trr, RECOVERY TIMES (ns)
800
125°C tb
25°C ta
25°C tb
300
400
500
600
700
800
125°C ta
50
4
8
12
20
16
Figure 20. RECOVERY TIMES vs.
FORWARD CURRENT
30
0
200
16
IEC, FORWARD CURRENT (A)
125°C ta
10
15
125°C tb
60
0
IEC/dt = 20 A, VCE = 390 V
20
14
125°C trr
Figure 19. DIODE FORWARD CURRENT vs.
FORWARD VOLTAGE DROP
40
13
70
VEC, FORWARD VOLTAGE (V)
50
12
dIEC/dt = 200 A/ms
80
3.0
2.5
11
Figure 18. COLLECTOR TO EMITTER ON−STATE
VOLTAGE vs. GATE TO EMITTER VOLTAGE
trr, RECOVERY TIMES (ns)
IEC, FORWARD CURRENT (A)
Figure 17. CAPACITANCE vs. COLLECTOR TO
EMITTER VOLTAGE
30
10
VGE, GATE TO EMITTER VOLTAGE (V)
900
VCE = 390 V
125°C, ICE = 20 A
600
125°C, ICE = 10 A
400
25°C, ICE = 20 A
200
25°C, ICE = 10 A
0
200
1000
300
400
500
600
700
800
900
1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/ms)
diEC/dt, RATE OF CHANGE OF CURRENT (A/ms)
Figure 21. RECOVERY TIMES vs. RATE OF
CHANGE OF CURRENT
Figure 22. STORED CHARGE vs. RATE OF
CHANGE OF CURRENT
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6
HGTG20N60A4D
ZqJC, NORMALIZED THERMAL RESPONSE
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
100
0.5
0.2
10−1
0.1
t1
0.05
PD
0.02
0.01
t2
10−2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD x ZqJC x RqJC) + TC
SINGLE PULSE
10−5
10−4
10−3
10−2
10−1
100
t1, RECTANGULAR PULSE DURATION (s)
Figure 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
TEST CIRCUIT AND WAVEFORMS
HGTG20N60A4D
DIODE TA49372
90%
10%
VGE
EOFF
L = 500 mH
RG = 3 W
EON2
VCE
90%
DUT
+
−
VDD = 390 V
10%
ICE
Figure 24. INDUCTIVE SWITCHING TEST CIRCUIT
t d(OFF)I
t fI
t rI
t d(ON)I
Figure 25. SWITCHING TEST WAVEFORMS
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HGTG20N60A4D
HANDLING PRECAUTIONS FOR IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate−insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers
in military, industrial and consumer applications, with
virtually no damage problems due to electrostatic discharge.
IGBTs can be handled safely if the following basic
precautions are taken:
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive
material such as “ECCOSORBDt LD26” or
equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be grounded
by any suitable means − for example, with a
metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
5. Gate Voltage Rating − Never exceed the
gate−voltage rating of VGEM. Exceeding the rated
VGE can result in permanent damage to the oxide
layer in the gate region.
6. Gate Termination − The gates of these devices are
essentially capacitors. Circuits that leave the gate
open− circuited or floating should be avoided.
These conditions can result in turn−on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
OPERATING FREQUENCY INFORMATION
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05 / (td(OFF)I + td(ON)I).
Deadtime (the denominator) has been arbitrarily held to
10% of the on−state time for a 50% duty factor. Other
definitions are possible. td(OFF)I and td(ON)I are defined in
Figure 25. Device turn−off delay can establish an additional
frequency limiting condition for an application other than
TJM. td(OFF)I is important when controlling output ripple
under a lightly loaded condition.
fMAX2 is defined by fMAX2 = (PD − PC) / (EOFF + EON2).
The allowable dissipation (PD) is defined by PD = (TJM − TC)
/ RqJC. The sum of device switching and conduction losses
must not exceed PD. A 50% duty factor was used (Figure 3)
and the conduction losses (PC) are approximated by
PC = (VCE x ICE) / 2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure . EON2 is the integral of the instantaneous
power loss (ICE x VCE) during turn−on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn−off. All tail losses are included in the calculation for
EOFF; i.e., the collector current equals zero (ICE = 0).
ORDERING INFORMATION
Part Number
HGTG20N60A4D
NOTE:
Package
Brand
Shipping
TO−247
20N60A4D
450 Units / Tube
When ordering, use the entire part number.
Saber is a registered trademark of Sabremark Limited Partnership.
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
A
DATE 31 JAN 2019
A
E
P1
P
A2
D2
Q
E2
S
B
D
1
2
D1
E1
2
3
L1
A1
L
b4
c
(3X) b
0.25 M
(2X) b2
B A M
DIM
(2X) e
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
A
A1
A2
b
b2
b4
c
D
D1
D2
E
E1
E2
e
L
L1
P
P1
Q
S
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
13.08
~
~
0.51 0.93 1.35
15.37 15.62 15.87
12.81
~
~
4.96 5.08 5.20
~
5.56
~
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
6.60 6.80 7.00
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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