HGTG30N60B3

IGBT - NPT 600 V HGTG30N60B3 Description The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter and power supplies. www.onsemi.com VCES IC 1200 V 30 A Features • • • • • • C 30 A, 600 V, TC = 110°C Low Saturation Voltage: VCE(SAT) = 1.45 V @ IC = 30 A Typical Fall Time . . . . . . . . . . . . . 90 ns at TJ = 150°C Short Circuit Rating Low Conduction Loss This Device is Pb−Free G E E C G TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K G30N60B3 $Y &Z &3 &K G30N60B3 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2001 March, 2020 − Rev. 3 1 Publication Order Number: HGTG30N60B3/D HGTG30N60B3 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Ratings Unit 600 V TC = 25°C 60 A TC = 110°C 30 A Collector Current Pulsed (Note 1) 220 A VGES Gate to Emitter Voltage Continuous ±20 V VGEM Gate to Emitter Voltage Pulsed ±30 V SSOA Switching Safe Operating Area at TJ = 150°C (Figure 2) BVCES IC ICM PD EARV TJ, TSTG TL TSC Description Collector to Emitter Voltage Collector Current Continuous 60 A at 600 V Power Dissipation Total TC = 25°C 208 W Power Dissipation Derating TC > 25°C 1.67 W/°C 100 mJ −55 to +150 °C Reverse Voltage Avalanche Energy Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering 260 °C Short Circuit Withstand Time (Note 2) VGE = 12 V 4 s Short Circuit Withstand Time (Note 2) VGE = 10 V 10 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360 V, TJ = 125°C, RG = 3  PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Shipping HGTG30N60B3 G30N60B3 TO−247 Tube 450/Tube ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit BVCES Collector to Emitter Breakdown Voltage IC = 250 A, VGE = 0 V 600 − − V BVECS Emitter to Collector Breakdown Voltage IC = −10 mA, VGE = 0 V 20 − − V Collector to Emitter Leakage Current VCE = BVCES, TC = 25°C − − 250 A VGE = BVCES, TC = 150°C − − 3.0 mA IC = IC110, VGE = 15 V, TC = 25°C − 1.45 1.9 V IC = IC110, VGE = 15 V, TC = 150°C − 1.7 2.1 V Gate to Emitter Threshold Voltage IC = 250 A, VCE = VGE 4.2 5.0 6.0 V Gate to Emitter Leakage Current VGE = ±20 V − − ±250 nA Switching SOA TJ = 150°C, RG = 3  VGE = 15 V, L = 100 H, VCE(PK) = 480 V 200 − A TJ = 150°C, RG = 3  VGE = 15 V, L = 100 H, VCE(PK) = 600 V 60 − A Gate to Emitter Plateau Voltage IC = IC110, VCE = 0.5 BVCES − 7.2 − V On−State Gate Charge IC = IC110, VCE = 0.5 BVCES, VGE = 15 V − 170 190 nC IC = IC110, VCE = 0.5 BVCES, VGE = 20 V − 230 250 nC ICES VCE(SAT) VGE(th) IGES SSOA VGEP QG(ON) Collector to Emitter Saturation Voltage www.onsemi.com 2 HGTG30N60B3 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Symbol Td(on)I TrI Td(off)I TfI Parameter Current Turn−On Delay Time Current Rise Time Current Turn−Off Delay Time Current Fall Time Test Conditions Min. Typ. Max. Unit IGBT and Diode at TJ = 25°C ICE = IC110 VCE = 0.8 BVCES VGE = 15 V RG = 3  L = 1 mH Test Circuit (Figure 17) − 36 − ns − 25 − ns − 137 − ns − 58 − ns Eon1 Turn−On Energy (Note 4) − 500 Eon2 Turn−On Energy (Note 4) − 550 800 J Eoff Turn−Off Energy (Note 3) − 680 900 J − 32 − ns − 24 − ns − 275 320 ns − 90 150 ns Td(on)l Trl Td(off)I Tfl Current Turn−On Delay Time Current Rise Time Current Turn−Off Delay Time Current Fall Time IGBT and Diode at TJ = 150°C ICE = IC110 VCE = 0.8 BVCES VGE = 15 V RG = 3  L = 1 mH Test Circuit (Figure 17) J Eon1 Turn−On Energy (Note 4) − 500 − J Eon2 Turn−On Energy (Note 4) − 1300 1550 J Eoff Turn−Off Energy (Note 3) − 1600 1900 J Thermal Resistance Junction To Case − − 0.6 °C/W RJC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Turn−Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss. 4. Values for two Turn−On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn−on loss of the IGBT only. EON2 is the turn−on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17. www.onsemi.com 3 HGTG30N60B3 TYPICAL PERFORMANCE CURVES 225 VGE = 15V ICE, Collector to Emitter Current (A) 50 40 30 20 10 0 25 50 75 100 125 TJ = 150oC, RG = 3 W, VGE= 15V, L =100 mH 200 175 150 125 100 75 50 25 0 150 0 100 TC, Case Temperature (5C) tSC, Short Circuit Withstand Time (ms) FMAX, Operating Frequency (kHz) 10 TC VGE fMAX1 = 0.05 / (td(OFF)I + td(ON)I) 1 o fMAX2 = (PD − PC) / (EON2 + EOFF) 75 C 15V o PC = CONDUCTION DISSIPATION 75o C 10V 110 C 15V (DUTY FACTOR = 50%) 110oC 10V RjJC = 0.6oC/W, SEE NOTES 0.1 5 20 40 10 60 20 450 16 14 350 12 300 10 ICE, Collector to Emitter Current (A) ICE, Collector to Emitter Current (A) TC = 150oC TC = 25oC 100 75 50 25 0 0 2 4 6 250 tSC 200 8 6 10 11 12 13 14 15 150 Figure 4. Short Circuit Withstand Time DUTY CYCLE