HGTG40N60B3

UFS Series N-Channel IGBT 70 A, 600 V HGTG40N60B3 The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49052. www.onsemi.com C G Features • • • • • • E 70 A, 600 V, TC = 25°C 600 V Switching SOA Capability Typical Fall Time: 100 ns at TJ = 150°C Short Circuit Rating Low Conduction Loss This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant TO−247−3LD CASE 340CK Packing MARKING DIAGRAMS $Y&Z&3&K G40N60B3 Figure 1. $Y &Z &3 &K G40N60B3 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION © Semiconductor Components Industries, LLC, 2004 April, 2020 − Rev. 4 1 Part Number Package Brand HGTG40N60B3 TO−24 G40N60B3 Publication Order Number: HGTG40N60B3/D HGTG40N60B3 ABSOLUTE MAXIMUM RATINGS TC = 25°C Unless Otherwise Specified Symbol Ratings Units BVCES 600 V IC25 IC110 70 40 A ICM 330 A Gate to Emitter Voltage Continuous VGES ±20 V Gate to Emitter Voltage Pulsed VGEM ±30 V Switching Safe Operating Area at TJ = 150°C, Figure 3 SSOA 100 A at 600 V PD 290 2.33 W W/°C EARV 100 mJ TJ, TSTG −55 to 150 °C TL 260 °C Short Circuit Withstand Time (Note 2) at VGE = 15 V tSC 2 ms Short Circuit Withstand Time (Note 2) at VGE = 10 V tSC 10 ms Description Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C Collector Current Pulsed (Note 1) Power Dissipation Total at TC = 25°C Power Dissipation Derating TC > 25°C Reverse Voltage Avalanche Energy Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360 V, TJ = 125°C, RG = 3 W. www.onsemi.com 2 HGTG40N60B3 ELECTRICAL SPECIFICATIONS TC = 25°C Unless Otherwise Specified SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNITS BVCES Collector to Emitter Breakdown Voltage IC = 250 mA, VGE = 0 V 600 − − V BVECS Emitter to Collector Breakdown Voltage IC = −10 mA, VGE = 0 V 20 − − V Collector to Emitter Leakage Current VCE = BVCES TC = 25°C − − 100 μA VCE = BVCES TC = 150°C − − 6.0 mA − 1.4 2.0 V − 1.5 2.3 V 3.0 4.8 6.0 V ICES VCE(SAT) Collector to Emitter Saturation Voltage IC = IC110, VGE = 15 V TC = 25°C TC = 150°C VGE(TH) IGES SSOA VGEP QG(ON) td(ON)I trI td(OFF)I Gate to Emitter Threshold Voltage IC = 250 mA, VCE = VGE Gate to Emitter Leakage Current VGE = ±20 V Switching SOA TJ = 150°C RG = 3 Ω VGE = 15 V L = 100 mH ±100 nA − − A VCE = 600 V 100 − − A IC = IC110, VCE = 0.5 BVCES − 7.5 − V On−State Gate Charge IC = IC110, VCE = 0.5 BVCES VGE = 15 V − 250 330 nC VGE = 20 V − 335 435 nC IGBT and Diode Both at TJ = 25°C ICE = IC110 VCE = 0.8 BVCES VGE = 15 V RG = 3 W L = 100 mH Test Circuit (Figure 18) − 47 − ns − 35 − ns − 170 200 ns − 50 100 ns − 1050 1200 mJ − 800 1400 mJ IGBT and Diode Both at TJ = 150°C ICE = IC110 VCE = 0.8 BVCES VGE = 15 V RG = 3 W L = 100 mH Test Circuit (Figure 17) − 47 − ns − 35 − ns − 285 375 ns − 100 175 ns − 1850 − mJ Current Turn−On Delay Time Current Rise Time Current Turn−Off Delay Time Current Fall Time EON Turn−On Energy EOFF Turn−Off Energy (Note 3) td(ON)I Current Turn−On Delay Time td(OFF)I − 200 Gate to Emitter Plateau Voltage tfI trI − VCE = 480 V Current Rise Time Current Turn−Off Delay Time tfI Current Fall Time EON Turn−On Energy EOFF Turn−Off Energy (Note 3) − 2000 − mJ RθJC Thermal Resistance Junction To Case − − 0.43 °C/W 3. Turn−Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss. Turn−On losses include losses due to diode recovery. www.onsemi.com 3 HGTG40N60B3 TYPICAL PERFORMANCE CURVES (continued) TJ = 1505C, RG = 3 Ω, VGE = 15 V 200 150 60 PACKAGE LIMITED 100 20 50 75 100 125 150 50 0 0 100 400 500 700 600 Figure 2. DC COLLECTOR CURRENT vs CASE TEMPERATURE Figure 3. MINIMUM SWITCHING SAFE OPERATING AREA VGE TC 100 75 o C 15 V 75 oC 10 V 110 oC 15 V 110 oC 10 V 10 f MAX1 = 0.05 / (td(OFF)I + td(ON)I ) f MAX2 = (PD − PC) / (E ON + E OFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RqJC = 0.435C/W, SEE NOTES 10 20 40 60 80 18 100 900 VCE = 360 V, RG = 3 Ω, TJ = 1255C 16 800 ISC 14 600 10 500 tSC 8 300 4 10 11 ICE, COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE