SMPS Series N-Channel
IGBT with Anti-Parallel
Hyperfast Diode
600 V
HGTG12N60A4D,
HGTP12N60A4D,
HGT1S12N60A4DS
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C
The
HGTG12N60A4D,
HGTP12N60A4D
and
HGT1S12N60A4DS are MOS gated high voltage switching devices
combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the
low on−state conduction loss of a bipolar transistor. The much lower
on−state voltage drop varies only moderately between 25°C and
150°C. The IGBT used is the development type TA49335. The diode
used in anti−parallel is the development type TA49371.
This IGBT is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses are
essential. This device has been optimized for high frequency switch
mode power supplies.
Formerly Developmental Type TA49337.
G
E
COLLECTOR
(FLANGE)
GC
E
COLLECTOR
(FLANGE)
Features
•
•
•
•
•
•
•
•
>100 kHz Operation 390 V, 12 A
200 kHz Operation 390 V, 9A
600 V Switching SOA Capability
Typical Fall Time 70 ns at TJ = 125°C
Low Conduction Loss
Temperature Compensating Saber™ Model
Related Literature
♦ TB334 “Guidelines for Soldering Surface Mount Components to
PC Boards”
These are Pb−Free Devices
TO−220−3LD
CASE 340AT
JEDEC ALTERNATE
VERSION
G
D2PAK−3
(TO−263, 3−LEAD)
CASE 418AJ
JEDEC STYLE
E
EC
G
COLLECTOR
(FLANGE)
TO−247−3LD
SHORT LEAD
CASE 340CK
JEDEC STYLE
MARKING DIAGRAM
$Y&Z&3&K
12N60A4D
$Y
&Z
&3
&K
12N60A4D
$Y&Z&3&K
12N60A4D
$Y&Z&3&K
12N60A4D
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
© Semiconductor Components Industries, LLC, 2001
April, 2020 − Rev. 3
1
Publication Order Number:
HGT1S12N60A4DS/D
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
Symbol
HGTG12N60A4D,
HGTP12N60A4D,
HGT1S12N60A4DS
Unit
BVCES
600
V
IC25
IC110
54
23
A
A
ICM
96
A
Gate to Emitter Voltage Continuous
VGES
±20
V
Gate to Emitter Voltage Pulsed
VGEM
±30
V
Switching Safe Operating Area at TJ = 150°C, Figure 2
SSOA
60 A at 600 V
Parameter
Collector to Emitter Voltage
Collector Current Continuous
At TC = 25°C
At TC = 110°C
Collector Current Pulsed (Note 1)
Power Dissipation Total at TC = 25°C
PD
167
W
1.33
W/°C
TJ, TSTG
−55 to 150
°C
TL
Tpkg
300
260
°C
°C
Power Dissipation Derating TC > 25°C
Operating and Storage Junction Temperature Range
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 s
Package Body for 10 s, see Tech Brief 334.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Collector to Emitter Breakdown Voltage
Symbol
Min
Typ
Max
Unit
600
−
−
V
TJ = 25°C
−
−
250
mA
TJ = 125°C
−
−
2.0
mA
TJ = 25°C
−
2.0
2.7
V
TJ = 125°C
−
1.6
2.0
V
IC = 250 mA, VCE = 600 V
−
5.6
−
V
VGE = ±20 V
−
−
±250
nA
SSOA
TJ = 150°C, RG = 10 W, VGE = 15 V,
L = 100 mH, VCE = 600 V
60
−
−
A
Gate to Emitter Plateau Voltage
VGEP
IC = 12 A, VCE = 300 V
On−State Gate Charge
Qg(ON)
IC = 12 A, VCE = 300 V
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Current Turn−On Delay Time
Current Rise Time
Current Turn−Off Delay Time
Current Fall Time
BVCES
Test Condition
ICES
VCE(SAT)
VGE(TH)
IGES
td(ON)I
trI
td(OFF)I
tfI
IC = 250 mA, VGE = 0 V
VCE = 600 V
IC = 12 A, VGE = 15 V
−
8
−
V
VGE = 15 V
−
78
96
nC
VGE = 20 V
−
97
120
nC
−
17
−
ns
−
8
−
ns
−
96
−
ns
−
18
−
ns
−
55
−
mJ
IGBT and Diode at TJ = 25°C,
ICE = 12 A,
VCE = 390 V,
VGE = 15 V,
RG = 10 W,
L = 500 mH,
Test Circuit (Figure 24)
Turn−On Energy (Note 3)
EON1
Turn−On Energy (Note 3)
EON2
−
160
−
mJ
Turn−Off Energy (Note 2)
EOFF
−
50
−
mJ
Current Turn−On Delay Time
td(ON)I
−
17
−
ns
−
16
−
ns
−
110
170
ns
−
70
95
ns
−
55
−
mJ
Current Rise Time
Current Turn−Off Delay Time
Current Fall Time
trI
td(OFF)I
tfI
IGBT and Diode at TJ = 125°C,
ICE = 12 A,
VCE = 390 V,
VGE = 15 V,
RG = 10 W,
L = 500 mH,
Test Circuit (Figure 24)
Turn−On Energy (Note 3)
EON1
Turn−On Energy (Note 3)
EON2
−
250
350
mJ
Turn−Off Energy (Note 2)
EOFF
−
175
285
mJ
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2
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued)
Parameter
Symbol
Diode Forward Voltage
Test Condition
VEC
Diode Reverse Recovery Time
trr
Thermal Resistance Junction To Case
RqJC
Min
Typ
Max
Unit
IEC = 12 A
−
2.2
−
V
IEC = 12 A, dIEC/dt = 200 A/ms
−
30
−
ns
IEC = 1 A, dIEC/dt = 200 A/ms
−
18
−
ns
IGBT
−
−
0.75
°C/W
Diode
−
−
2.0
°C/W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Turn−Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for
Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss.
3. Values for two Turn−On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn−on loss of the IGBT only. EON2
is the turn−on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified
in Figure 24.
70
VGE = 15 V
50
40
30
20
10
0
25
50
75
100
125
TJ = 150°C, RG = 10 W, VGE = 15 V, L = 200 mH
60
50
40
30
20
10
0
150
0
TC, CASE TEMPERATURE (°C)
TC
75°C
300
VGE
15 V
100
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD − PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.75°C/W, SEE NOTES
TJ = 125°C, RG = 10 W, L = 500 mH, VCE = 390 V
10
1
3
10
200
300
400
500
600
700
Figure 2. MINIMUM SWITCHING SAFE
OPERATING AREA
tSC, SHORT CIRCUIT WITHSTAND
TIME (ms)
fMAX, OPERATING FREQUENCY (kHz)
Figure 1. DC COLLECTOR CURRENT vs.
CASE TEMPERATURE
500
100
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
20
20
300
VCE = 390 V, RG = 10 W, TJ = 125°C
18
275
16
250
14
225
I SC
12
200
175
10
8
150
6
125
t SC
4
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
100
2
75
0
50
15
9
10
11
12
13
14
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 3. OPERATING FREQUENCY vs.
COLLECTOR TO EMITTER CURRENT
Figure 4. SHORT CIRCUIT WITHSTAND TIME
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3
ISC, PEAK SHORT CIRCUIT CURRENT (A)
60
ICE, COLLECTOR TO EMITTER
CURRENT (A)
ICE, DC COLLECTOR CURRENT (A)
TYPICAL PERFORMANCE CURVES (unless otherwise specified)
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
24
DUTY CYCLE < 0.5%, VGE = 12 V
PULSE DURATION = 250 ms
20
ICE, COLLECTOR TO EMITTER
CURRENT (A)
ICE, COLLECTOR TO EMITTER
CURRENT (A)
24
16
TJ = 150°C
12
TJ = 125°C
8
4
0
TJ = 25°C
0
0.5
1
1.5
2
DUTY CYCLE < 0.5%, VGE = 15 V
PULSE DURATION = 250 ms
20
16
TJ = 150°C
12
TJ = 125°C
8
4
TJ = 25°C
0
2.5
0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
RG = 10 W, L = 500 mH, VCE = 390 V
600
TJ = 125°C, VGE = 12 V, VGE = 15 V
500
400
300
200
TJ = 25°C, VGE = 12 V, VGE = 15 V
100
0
2
4
6
8
10
12
14
16
18
20
22
24
400
300
150
100
50
0
TJ = 25°C, VGE = 12 V or 15 V
2
13
12
TJ = 25°C or TJ = 125°C, VGE = 15 V
4
6
8
10
12
14
16
18
20
8
10
12
14
16
18
20
22
24
RG = 10 W, L = 500 mH, VCE = 390 V
28
trI, RISE TIME (ns)
td(ON)I, TURN−ON DELAY TIME (ns)
32
TJ = 25°C or TJ = 125°C, VGE = 12 V
2
6
Figure 8. TURN−OFF ENERGY LOSS vs.
COLLECTOR TO EMITTER CURRENT
14
10
4
ICE, COLLECTOR TO EMITTER CURRENT (A)
16
11
2.5
200
RG = 10 W, L = 500 mH
VCE = 390 V
15
2
TJ = 125°C, VGE = 12 V or 15 V
250
Figure 7. TURN−ON ENERGY LOSS vs.
COLLECTOR TO EMITTER CURRENT
17
1.5
RG = 10 W, L = 500 mH, VCE = 390 V
350
ICE, COLLECTOR TO EMITTER CURRENT (A)
18
1
Figure 6. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
EOFF, TURN−OFF ENERGY LOSS (mJ)
EON2, TURN−ON ENERGY LOSS (mJ)
Figure 5. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
700
0.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
22
24
TJ = 125°C or TJ = 25°C, VGE = 12 V
20
16
12
8
TJ = 25°C or TJ = 125°C, VGE = 15 V
4
0
24
ICE, COLLECTOR TO EMITTER CURRENT (A)
2
4
6
8
10
12
14
16
18
20
22
24
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 9. TURN−ON DELAY TIME vs. COLLECTOR
TO EMITTER CURRENT
Figure 10. TURN−ON RISE TIME vs. COLLECTOR
TO EMITTER CURRENT
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HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
115
90
RG = 10 W, L = 500 mH, VCE = 390 V
110
VGE = 12 V, VGE = 15 V, TJ = 125°C
105
100
95
VGE = 12 V, VGE = 15 V, TJ = 25°C
90
85
RG = 10 W, L = 500 mH, VCE = 390 V
80
tfI, FALL TIME (ns)
td(OFF)I, TURN−OFF DELAY TIME (ns)
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
70
TJ = 125°C, VGE = 12 V or 15 V
60
50
40
30
TJ = 25°C, VGE = 12 V or 15 V
20
2
4
6
8
10
12
14
16
18
20
22
10
24
4
2
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER
CURRENT (A)
250
DUTY CYCLE < 0.5%, VCE = 10 V
PULSE DURATION = 250 ms
TJ = 25°C
150
TJ = −55°C
100
TJ = 125°C
50
0
6
7
8
9
10
11
12
13
14
8
15
16
16
12
VCE = 600 V
10
6
25
ICE = 6 A
50
75
100
22
24
125
VCE = 400 V
VCE = 200 V
2
0
ETOTAL, TOTAL SWITCHING
ENERGY LOSS (mJ)
ETOTAL, TOTAL SWITCHING
ENERGY LOSS (mJ)
0.4
0
20
4
0
10
ICE = 12 A
0.2
18
10
20
30
40
50
60
70
80
Figure 14. GATE CHARGE WAVEFORMS
ICE = 24 A
0.6
16
QG, GATE CHARGE (nC)
RG = 10 W, L = 500 mH, VCE = 390 V, VGE = 15 V
ETOTAL = EON2 + EOFF
0.8
14
8
Figure 13. TRANSFER CHARACTERISTIC
1.0
12
IG(REF) = 1 mA, RL = 25 W, TC = 25°C
14
VGE, GATE TO EMITTER VOLTAGE (V)
1.2
10
Figure 12. FALL TIME vs COLLECTOR TO
EMITTER CURRENT
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 11. TURN−OFF DELAY TIME vs.
COLLECTOR TO EMITTER CURRENT
200
6
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE = 24 A
1
ICE = 12 A
ICE = 6 A
0.1
150
TJ = 125°C L = 500 mH,
VCE = 390 V, VGE = 15 V
ETOTAL = EON2 + EOFF
TC, CASE TEMPERATURE (°C)
5
10
100
RG, GATE RESISTANCE (W)
Figure 15. TOTAL SWITCHING LOSS vs.
CASE TEMPERATURE
Figure 16. TOTAL SWITCHING LOSS vs.
GATE RESISTANCE
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5
1000
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
C, CAPACITANCE (nF)
VCE, COLLECTOR TO EMITTER
VOLTAGE (V)
2.4
3.0
FREQUENCY 1 MHz
2.5
2.0
CIES
1.5
COES
1.0
0.5
CRES
0
0
5
10
15
20
DUTY CYCLE < 0.5%, VGE = 15 V
PULSE DURATION = 250 ms, TJ = 25°C
2.3
2.2
ICE = 18 A
2.1
ICE = 12 A
2.0
ICE = 6 A
1.9
8
25
5
9
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
90
DUTY CYCLE < 0.5%
PULSE DURATION = 250 ms
12
10
8
125°C
25°C
6
4
2
0
0
0.5
1.0
1.5
2.0
50
40
125°C ta
30
25°C trr
20
25°C tb
10
2.5
25°C ta
1
2
Qrr, REVERSE RECOVERY
CHARGE (nc)
trr, RECOVERY TIMES (ns)
400
25°C ta
25°C tb
300
400
500
600
700
800
4
5
6
7
8
9
10
11
12
Figure 20. RECOVERYTIMES vs.
FORWARD CURRENT
125°C ta
15
10
5
200
3
IEC, FORWARD CURRENT (A)
125°C tb
25
20
16
125°C tb
60
0
IEC/dt = 12 A, VCE = 390 V
40
35
30
15
125°C trr
70
Figure 19. DIODE FORWARD CURRENT vs.
FORWARD VOLTAGE DROP
50
45
14
13
dIEC/dt = 200 A/ms
80
VEC, FORWARD VOLTAGE (V)
65
60
55
12
Figure 18. COLLECTOR TO EMITTER ON−STATE
VOLTAGE vs. GATE TO EMITTER VOLTAGE
trr, RECOVERY TIMES (ns)
IEC, FORWARD CURRENT (A)
Figure 17. CAPACITANCE vs. COLLECTOR TO
EMITTER VOLTAGE
14
11
10
VGE, GATE TO EMITTER VOLTAGE (V)
900
VCE = 390 V
350
300
125°C ICE = 12 A
125°C ICE = 6 A
250
200
25°C ICE = 12 A
150
100
25°C ICE = 6 A
50
0
200
1000
300
400
500
600
700
800
900
1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/ms)
diEC/dt, RATE OF CHANGE OF CURRENT (A/ms)
Figure 21. RECOVERY TIMES vs. RATE OF
CHANGE OF CURRENT
Figure 22. STORED CHARGE vs. RATE OF
CHANGE OF CURRENT
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HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
ZqJC, NORMALIZED THERMAL RESPONSE
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
100
0.50
0.20
10−1
t1
0.10
PD
0.05
t2
0.02
0.01
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD x ZqJC x RqJC) + TC
SINGLE PULSE
10−2 −5
10
10−4
10−3
10−2
10−1
100
101
t1, RECTANGULAR PULSE DURATION (s)
Figure 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
TEST CIRCUIT AND WAVEFORMS
HGTP12N60A4D
DIODE TA49371
90%
10%
VGE
EOFF
L = 500 mH
RG = 10 W
EON2
VCE
90%
DUT
+
−
VDD = 390 V
10%
ICE
Figure 24. INDUCTIVE SWITCHING TEST CIRCUIT
t d(OFF)I
t fI
t rI
t d(ON)I
Figure 25. SWITCHING TEST WAVEFORMS
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7
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
HANDLING PRECAUTIONS FOR IGBTS
Insulated Gate Bipolar Transistors are susceptible to
gate−insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers
in military, industrial and consumer applications, with
virtually no damage problems due to electrostatic discharge.
IGBTs can be handled safely if the following basic
precautions are taken:
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive
material such as “ECCOSORBDt LD26” or
equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be grounded
by any suitable means − for example, with a
metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
5. Gate Voltage Rating − Never exceed the
gate−voltage rating of VGEM. Exceeding the rated
VGE can result in permanent damage to the oxide
layer in the gate region.
6. Gate Termination − The gates of these devices are
essentially capacitors. Circuits that leave the gate
open− circuited or floating should be avoided.
These conditions can result in turn−on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection − These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
OPERATING FREQUENCY INFORMATION
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8,
9 and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05 / (td(OFF)I + td(ON)I).
Deadtime (the denominator) has been arbitrarily held to
10% of the on−state time for a 50% duty factor. Other
definitions are possible. td(OFF)I and td(ON)I are defined in
Figure 25. Device turn−off delay can establish an additional
frequency limiting condition for an application other than
TJM. td(OFF)I is important when controlling output ripple
under a lightly loaded condition.
fMAX2 is defined by fMAX2 = (PD − PC) / (EOFF + EON2).
The allowable dissipation (PD) is defined by PD = (TJM − TC)
/ RqJC. The sum of device switching and conduction losses
must not exceed PD. A 50% duty factor was used (Figure 3)
and the conduction losses (PC) are approximated by
PC = (VCE x ICE) / 2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 25. EON2 is the integral of the instantaneous
power loss (ICE x VCE) during turn−on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn−off. All tail losses are included in the calculation for
EOFF; i.e., the collector current equals zero (ICE = 0).
ORDERING INFORMATION
Package
Brand
Shipping†
HGTG12N60A4D
TO−247
12N60A4D
450 Units / Tube
HGTP12N60A4D
TO−220AB
12N60A4D
800 Units / Tube
HGT1S12N60A4DS
TO−263AB
12N60A4D
800 Units / Tube
Part Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO−263AB variant in tape and reel, e.g.
HGT1S12N60A4DS9A.
Saber is a registered trademark of Sabremark Limited Partnership.
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−3LD
CASE 340AT
ISSUE A
DATE 03 OCT 2017
Scale 1:1
DOCUMENT NUMBER:
DESCRIPTION:
98AON13818G
TO−220−3LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
A
DATE 31 JAN 2019
A
E
P1
P
A2
D2
Q
E2
S
B
D
1
2
D1
E1
2
3
L1
A1
L
b4
c
(3X) b
0.25 M
(2X) b2
B A M
DIM
(2X) e
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
A
A1
A2
b
b2
b4
c
D
D1
D2
E
E1
E2
e
L
L1
P
P1
Q
S
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
13.08
~
~
0.51 0.93 1.35
15.37 15.62 15.87
12.81
~
~
4.96 5.08 5.20
~
5.56
~
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
6.60 6.80 7.00
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
SCALE 1:1
GENERIC MARKING DIAGRAMS*
XX
XXXXXXXXX
AWLYWWG
IC
DOCUMENT NUMBER:
DESCRIPTION:
XXXXXXXXG
AYWW
Standard
98AON56370E
AYWW
XXXXXXXXG
AKA
Rectifier
XXXXXX
XXYMW
SSG
DATE 11 MAR 2021
XXXXXX = Specific Device Code
A
= Assembly Location
WL
= Wafer Lot
Y
= Year
WW
= Work Week
W
= Week Code (SSG)
M
= Month Code (SSG)
G
= Pb−Free Package
AKA
= Polarity Indicator
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
ON Semiconductor and
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coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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