HGTG20N60A4, HGTP20N60A4
Data Sheet
April 2013
600 V SMPS IGBT
Features
The HGTG20N60A4 and HGTP20N60A4 are combines the
best features of high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. This
IGBT is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses
are essential. This device has been optimized for fast
switching applications, such as UPS, welder and induction
heating.
• 40 A, 600 V @ TC = 110°C
File Number
• Low Saturation Voltage : VCE(sat) = 1.8 V @ IC = 20 A
• Typical Fall Time............55ns at TJ = 125°C
• Low Conduction Loss
Packaging
Formerly Developmental Type TA49339.
JEDEC TO-220AB ALTERNATE VERSION
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP20N60A4
TO-220AB
20N60A4
HGTG20N60A4
TO-247
20N60A4
NOTE: When ordering, use the entire part number.
GCE
Symbol
TO-220
JEDEC STYLE TO-247
C
G
E
©2005 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. C0
G
1
C
E
TO-247
www.fairchildsemi.com
HGTG20N60A4, HGTP20N60A4
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
HGTG20N60A4, HGTP20N60A4
UNIT
600
V
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
70
A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
40
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
280
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
±30
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
100A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
290
W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.32
W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
TJ = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector to Emitter Breakdown Voltage
BVCES
IC = 250μA, VGE = 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
BVECS
IC = -10mA, VGE = 0V
20
-
-
V
-
-
250
μA
-
-
2.0
mA
-
1.8
2.7
V
-
1.6
2.0
V
4.5
5.5
7.0
V
-
-
±250
nA
100
-
-
A
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
ICES
VCE(SAT)
VGE(TH)
IGES
VCE = 600V
IC = 20A,
VGE = 15V
TJ = 25oC
TJ = 125oC
TJ = 25oC
TJ = 125oC
IC = 250μA, VCE = 600V
VGE = ±20V
Switching SOA
SSOA
TJ = 150oC, RG = 3Ω, VGE = 15V
L = 100μH, VCE = 600V
Gate to Emitter Plateau Voltage
VGEP
IC = 20A, VCE = 300V
-
8.6
-
V
IC = 20A,
VCE = 300V
VGE = 15V
-
142
162
nC
VGE = 20V
-
182
210
nC
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
IGBT and Diode at TJ = 25oC
ICE = 20A
VCE = 390V
VGE =15V
RG = 3Ω
L = 500μH
Test Circuit (Figure 20)
-
15
-
ns
-
12
-
ns
-
73
-
ns
-
32
-
ns
Turn-On Energy (Note 3)
EON1
-
105
-
μJ
Turn-On Energy (Note 3)
EON2
-
280
350
μJ
Turn-Off Energy (Note 2)
EOFF
-
150
200
μJ
©2005 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. C0
2
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HGTG20N60A4, HGTP20N60A4
Electrical Specifications
TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
Current Turn-On Delay Time
TEST CONDITIONS
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
MIN
TYP
MAX
UNIT
-
15
21
ns
-
13
18
ns
-
105
135
ns
-
55
73
ns
-
115
-
μJ
600
μJ
IGBT and Diode at TJ = 125oC
ICE = 20A
VCE = 390V
VGE = 15V
RG = 3Ω
tfI
L = 500μH
Test Circuit (Figure 20)
Turn-On Energy (Note 3)
EON1
Turn-On Energy (Note 3)
EON2
-
510
Turn-Off Energy (Note 2)
EOFF
-
330
500
μJ
Thermal Resistance Junction To Case
RθJC
-
-
0.43
oC/W
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 20.
Unless Otherwise Specified
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
100
VGE = 15V
DIE CAPABILITY
80
PACKAGE LIMIT
60
40
20
0
25
75
50
100
125
150
120
TJ = 150oC, RG = 3Ω, VGE = 15V, L = 100μH
100
80
60
40
20
0
0
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TC
VGE
75oC
15V
tSC , SHORT CIRCUIT WITHSTAND TIME (μs)
fMAX, OPERATING FREQUENCY (kHz)
500
300
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
100 fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.43oC/W, SEE NOTES
TJ = 125oC, RG = 3Ω, L = 500μH, V CE = 390V
40
5
10
20
30
40
50
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
HGTG20N60A4, HGTP20N60A4 Rev. C0
14
450
VCE = 390V, RG = 3Ω, TJ = 125oC
12
400
ISC
10
350
8
300
6
250
4
200
tSC
2
0
150
10
11
12
13
14
15
100
VGE , GATE TO EMITTER VOLTAGE (V)
ICE , COLLECTOR TO EMITTER CURRENT (A)
©2005 Fairchild Semiconductor Corporation
700
100
200
300
400
500
600
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TC , CASE TEMPERATURE (oC)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
Typical Performance Curves
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
3
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HGTG20N60A4, HGTP20N60A4
100
Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250μs
80
60
40
TJ = 125oC
20
0
TJ = 25oC
TJ = 150oC
0
0.4
2.4
2.8
1.6
2.0
0.8
1.2
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
3.2
EOFF, TURN-OFF ENERGY LOSS (μJ)
EON2 , TURN-ON ENERGY LOSS (μJ)
TJ = 125oC, VGE = 12V, VGE = 15V
800
600
400
0
TJ = 25oC, VGE = 12V, VGE = 15V
40
TJ = 125oC
20
0
TJ = 150oC
0
0.4
10
15
20
25
30
35
ICE , COLLECTOR TO EMITTER CURRENT (A)
1.2
1.6
2.0
2.4
2.8
RG = 3Ω, L = 500μH, VCE = 390V
700
600
500
TJ = 125oC, VGE = 12V OR 15V
400
300
200
TJ = 25oC, VGE = 12V OR 15V
100
5
40
10
15
20
25
30
35
40
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
36
22
RG = 3Ω, L = 500μH, VCE = 390V
RG = 3Ω, L = 500μH, VCE = 390V
20
32
trI , RISE TIME (ns)
TJ = 25oC, TJ = 125oC, VGE = 12V
18
16
14
12
TJ = 25oC, TJ = 125oC, VGE = 12V
28
24
20
16
12
TJ = 25oC, TJ = 125oC, VGE = 15V
10
8
0.8
TJ = 25oC
0
5
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
td(ON)I, TURN-ON DELAY TIME (ns)
60
800
1200
200
80
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
RG = 3Ω, L = 500μH, VCE = 390V
1000
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250μs
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1400
100
TJ = 25oC OR TJ = 125oC, VGE = 15V
8
4
5
10
15
20
25
30
35
40
5
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
©2005 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. C0
10
15
20
25
30
35
40
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
4
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HGTG20N60A4, HGTP20N60A4
Typical Performance Curves
Unless Otherwise Specified (Continued)
80
RG = 3Ω, L = 500μH, VCE = 390V
RG = 3Ω, L = 500μH, VCE = 390V
72
110
VGE = 12V, VGE = 15V, TJ = 125oC
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
120
100
90
80
VGE = 12V, VGE = 15V, TJ = 25oC
64
TJ = 125oC, VGE = 12V OR 15V
56
48
TJ = 25oC, VGE = 12V OR 15V
40
32
70
24
60
5
10
15
20
25
30
35
16
40
5
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
16
240
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250μs
160
120
TJ = 25oC
80
TJ = 125oC
TJ = -55oC
40
0
6
7
8
9
10
11
12
VCE = 600V
10
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ICE = 30A
1.0
0.8
ICE = 20A
ICE = 10A
0.2
0
25
50
75
100
125
150
VCE = 200V
6
4
2
0
20
40
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
HGTG20N60A4, HGTP20N60A4 Rev. C0
60
80
100
120
140
160
TJ = 125oC, L = 500μH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
10
ICE = 30A
1
ICE = 20A
ICE = 10A
0.1
3
10
1000
100
RG, GATE RESISTANCE (Ω)
TC , CASE TEMPERATURE (oC)
©2005 Fairchild Semiconductor Corporation
VCE = 400V
FIGURE 14. GATE CHARGE WAVEFORMS
1.4
0.4
40
QG, GATE CHARGE (nC)
ETOTAL = EON2 + EOFF
0.6
35
8
0
12
RG = 3Ω, L = 500μH, VCE = 390V, VGE = 15V
1.2
30
IG(REF) = 1mA, RL = 15Ω, TJ = 25oC
FIGURE 13. TRANSFER CHARACTERISTIC
1.6
25
14
VGE, GATE TO EMITTER VOLTAGE (V)
1.8
20
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
VGE, GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
200
15
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
5
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HGTG20N60A4, HGTP20N60A4
Unless Otherwise Specified (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Typical Performance Curves
5
C, CAPACITANCE (nF)
FREQUENCY = 1MHz
4
3
CIES
2
1
COES
CRES
0
0
20
40
60
80
100
2.2
DUTY CYCLE < 0.5%, TJ = 25oC
PULSE DURATION = 250μs,
2.1
2.0
ICE = 30A
ICE = 20A
1.9
1.8
ICE = 10A
1.7
8
9
12
11
13
14
15
16
VGE, GATE TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
ZθJC , NORMALIZED THERMAL RESPONSE
10
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
100
0.5
0.2
10-1
0.1
t1
0.05
PD
0.02
0.01
10-2
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGTG20N60A4D
DIODE TA49372
90%
10%
VGE
EON2
L = 500μH
EOFF
VCE
RG = 3Ω
90%
DUT
+
-
ICE
VDD = 390V
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
©2005 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. C0
FIGURE 21. SWITCHING TEST WAVEFORMS
6
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HGTG20N60A4, HGTP20N60A4
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers
in military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2 ; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM .
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM TC)/RθJC . The sum of device switching and conduction losses
must not exceed PD . A 50% duty factor was used (Figure 3)
and the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 21. EON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE x VCE) during turn-off. All tail losses are included in the
calculation for EOFF; i.e., the collector current equals zero
(ICE = 0).
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
©2005 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. C0
7
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HGTG20N60A4, HGTP20N60A4
Mechanical Dimensions
TO-247A03
©2005 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. C0
8
www.fairchildsemi.com
HGTG20N60A4, HGTP20N60A4
Mechanical Dimensions
TO-220B03
Dimensions in Millimeters
©2005 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. C0
9
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchilds quality standards for handing and storage and provide access to Fairchilds full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2005 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. C0
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