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HMHA281, HMHA2801 Series
4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers
Features
Description
■ Compact 4-pin Package
The HMHA281 and HMHA2801 series devices consist of
a gallium arsenide infrared emitting diode driving a
silicon phototransistor in a compact 4-pin mini-flat
package. The lead pitch is 1.27 mm.
– 2.4 mm Maximum Standoff Height
– Half-pitch Leads for Optimum Board Space Savings
■ Current Transfer Ratio:
– HMHA281: 50% to 600%
– HMHA2801: 80% to 600%
– HMHA2801A: 80% to 160%
– HMHA2801B: 130% to 260%
– HMHA2801C: 200% to 400%
■ Safety and Regulatory Approvals:
– UL1577, 3,750 VACRMS for 1 Minute
– DIN-EN/IEC60747-5-5, 565 V Peak Working
Insulation Voltage
Applications
■ Digital Logic Inputs
■ Microprocessor Inputs
■ Power Supply Monitor
■ Twisted Pair Line Receiver
■ Telephone Line Receiver
Schematic
Package Outline
ANODE 1
4 COLLECTOR
CATHODE 2
3 EMITTER
Figure 2. Package Outlines
Figure 1. Schematic
©2011 Fairchild Semiconductor Corporation
HMHA281, HMHA2801 Series Rev. 5.2
www.fairchildsemi.com
HMHA281, HMHA2801 Series — 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers
June 2015
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Characteristics
< 150 VRMS
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
I–IV
I–III
< 300 VRMS
Climatic Classification
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
Symbol
175
Value
Unit
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
904
Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
1060
Vpeak
VIORM
Maximum Working Insulation Voltage
565
Vpeak
VIOTM
Highest Allowable Over-Voltage
VPR
Parameter
4000
Vpeak
External Creepage
≥5
mm
External Clearance
≥5
mm
mm
DTI
Distance Through Insulation (Insulation Thickness)
≥ 0.4
TS
Case Temperature(1)
150
°C
Input Current(1)
200
mA
300
mW
IS,INPUT
PS,OUTPUT Output Power(1)
RIO
Insulation Resistance at TS, VIO =
500 V(1)
>
109
Ω
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
©2011 Fairchild Semiconductor Corporation
HMHA281, HMHA2801 Series Rev. 5.2
www.fairchildsemi.com
2
HMHA281, HMHA2801 Series — 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers
Safety and Insulation Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Value
Units
TOTAL PACKAGE
TSTG
Storage Temperature
-55 to +125
°C
TOPR
Operating Temperature
-55 to +100
°C
Junction Temperature
-40 to +125
°C
Total Device Power Dissipation @ TA = 25°C
210
mW
Derate Above 25°C
2.1
mW/°C
IF (avg)
Continuous Forward Current
50
mA
IF (pk)
Peak Forward Current (1 µs pulse, 300 pps)
1
A
Reverse Input Voltage
6
V
LED Power Dissipation @ TA = 25°C
60
mW
Derate Above 25°C
0.6
mW/°C
Continuous Collector Current
50
mA
VCEO
Collector-Emitter Voltage
80
V
VECO
Emitter-Collector Voltage
7
V
Detector Power Dissipation @ TA = 25°C
150
mW
Derate Above 25°C
1.5
mW/°C
TJ
PD
EMITTER
VR
PD
DETECTOR
IC
PD
©2011 Fairchild Semiconductor Corporation
HMHA281, HMHA2801 Series Rev. 5.2
www.fairchildsemi.com
3
HMHA281, HMHA2801 Series — 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers
Absolute Maximum Ratings
TA = 25°C
Symbol
Parameter
Test Conditions
Device
Min.
1.0
Typ.
Max.
Unit
1.3
V
5
µA
INDIVIDUAL COMPONENT CHARACTERISTICS
Emitter
VF
Forward Voltage
IF = 10 mA
All
IR
Reverse Current
VR = 5 V
All
BVCEO
Breakdown Voltage
Collector to Emitter
IC = 0.5 mA, IF = 0
All
80
BVECO
Emitter to Collector
IE = 100 µA, IF = 0
All
7
ICEO
Collector Dark Current
VCE = 80 V, IF = 0
All
CCE
Capacitance
VCE = 0 V, f = 1 MHz
All
Detector
V
100
10
nA
pF
TRANSFER CHARACTERISTICS
CTR
DC Current Transfer Ratio IF = 5 mA, VCE = 5 V
VCE (SAT) Saturation Voltage
HMHA281
50
600
HMHA2801
80
600
HMHA2801A
80
160
HMHA2801B
130
260
HMHA2801C
200
400
IF = 8 mA, IC = 2.4 mA
HMHA281
0.4
IF = 10 mA, IC = 2 mA
HMHA2801,
HMHA2801A,
HMHA2801B,
HMHA2801C
0.3
tr
Rise Time
(Non-Saturated)
IC = 2 mA, VCE = 5 V,
RL = 100 Ω
All
tf
Fall Time
(Non-Saturated)
IC = 2 mA, VCE = 5 V,
RL = 100 Ω
All
1 Minute
All
%
V
3
µs
3
ISOLATION CHARACTERISTICS
VISO
Steady State Isolation
Voltage
©2011 Fairchild Semiconductor Corporation
HMHA281, HMHA2801 Series Rev. 5.2
3750
VACRMS
www.fairchildsemi.com
4
HMHA281, HMHA2801 Series — 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers
Electrical Characteristics
100
100
VCE = 10 V
IC - COLLECTOR CURRENT (mA)
IF - FORWARD CURRENT (mA)
TA = 25˚C
10
VCE = 5 V
10
VCE = 0.4 V
1
0.1
1
0.6
0.8
1.0
1.2
1.4
1
1.6
10
VF - FORWARD VOLTAGE (V)
Figure 3. Forward Current vs. Forward Voltage
Figure 4. Collector Current vs. Forward Current
2.0
1000
TA = 25˚C
NORMALIZED CTR (IF) / CTR (5mA)
IC /IF - CURRENT TRANSFER RATIO (%)
100
IF - FORWARD CURRENT (mA)
VCE = 10 V
VCE = 5 V
100
VCE = 0.4 V
Normalized to:
IF = 5 mA
VCE = 5 V
TA = 25˚C
1.5
IF = 5 mA
1.0
IF = 10 mA
IF = 1 mA
0.5
IF = 0.5mA
0.0
-0.5
10
1
10
-40
100
-20
IF - FORWARD CURRENT (mA)
0
20
40
60
80
100
TA - AMBIENT TEMPERATURE (°C)
Figure 5. Current Transfer Ratio vs. Forward Current
Figure 6. Normalized CTR vs. Temperature
100
IC - COLLECTOR CURRENT (mA)
VCE = 5 V
IF = 25 mA
10
IF = 10 mA
IF = 5 mA
IF = 1 mA
1
IF = 0.5 mA
0.1
-40
-20
0
20
40
60
80
100
TA - AMBIENT TEMPERATURE (°C)
Figure 7. Collector Current vs. Temperature
©2011 Fairchild Semiconductor Corporation
HMHA281, HMHA2801 Series Rev. 5.2
www.fairchildsemi.com
5
HMHA281, HMHA2801 Series — 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers
Typical Performance Characteristics
50
18
40
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
TA = 25˚C
IF = 50 mA
IF = 40 mA
IF = 30 mA
30
IF = 20 mA
IF = 10 mA
20
IF = 5.0 mA
10
16
IF = 50 mA
IF = 40 mA
14
IF = 30 mA
12
IF = 20 mA
10
8
IF = 10 mA
6
IF = 5 mA
4
IF = 2 mA
2
IF = 0.5 mA
IF = 1.0 mA
0
0
1
2
3
4
5
6
7
8
9
0
0.0
10
0.2
VCE - COLLECTOR-EMITTER VOLTAGE (V)
0.6
0.8
1.0
VCE - COLLECTOR-EMITTER VOLTAGE (V)
Figure 8. Collector Current vs.
Collector-Emitter Voltage
Figure 9. Collector Current vs.
Collector-Emitter Voltage
1000
10
SWITCHING TIME (μs)
ICEO - COLLECTOR DARK CURRENT (μA)
0.4
IF = 1.0 mA
1
VCE = 48 V
VCE = 24 V
0.1
VCE = 10 V
0.01
TA = 25˚C
IF = 16 mA
VCC = 5 V
tOFF
100
tS
10
1
VCE = 5 V
tON
0.1
0.001
0
20
40
60
80
100
1
10
TA - AMBIENT TEMPERATURE (˚C)
100
RL - LOAD RESISTANCE (KΩ)
Figure 10. Collector Dark Current vs.
Temperature
Figure 11. Switching Time vs. Load Resistance
0.30
IF = 5 mA
IC = 1 mA
VCE(SAT) - COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.28
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
-40
-20
0
20
40
60
80
100
TA - AMBIENT TEMPERATURE (˚C)
Figure 12. Collector-Emitter Saturation Voltage
vs. Temperature
©2011 Fairchild Semiconductor Corporation
HMHA281, HMHA2801 Series Rev. 5.2
www.fairchildsemi.com
6
HMHA281, HMHA2801 Series — 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers
Typical Performance Characteristics (Continued)
HMHA281, HMHA2801 Series — 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers
Reflow Profile
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
260 T
P
245
240
220 TL
Temperature (°C)
200
tP
Tsmax
tL
180
160
Tsmin
140
ts
120
100
80
60
40
20
0
120
240
360
Time 25°C to Peak
Figure 13. Reflow Profile
Profile Freature
Pb-Free Assembly Profile
Temperature Minimum (Tsmin)
150°C
Temperature Maximum (Tsmax)
200°C
Time (tS) from (Tsmin to Tsmax)
60–120 seconds
Ramp-up Rate (tL to tP)
3°C/second maximum
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60–150 seconds
Peak Body Package Temperature
245°C +0°C / –5°C
Time (tP) within 5°C of 245°C
30 seconds
6°C/second maximum
Ramp-down Rate (TP to TL)
Time 25°C to Peak Temperature
©2011 Fairchild Semiconductor Corporation
HMHA281, HMHA2801 Series Rev. 5.2
8 minutes maximum
www.fairchildsemi.com
7
Part Number
Package
Packing Method
HMHA2801
Half Pitch Mini-Flat 4-Pin
Tube (100 units)
HMHA2801R2
Half Pitch Mini-Flat 4-Pin
Tape and Reel (2500 Units)
HMHA2801V
Half Pitch Mini-Flat 4-Pin, DIN EN/IEC60747-5-5 Option
Tube (100 Units)
HMHA2801R2V
Half Pitch Mini-Flat 4-Pin, DIN EN/IEC60747-5-5 Option
Tape and Reel (2500 Units)
Note:
2. The product orderable part number system listed in this table also applies to the HMHA281, HMHA2801A,
HMHA2801B, and HMHA2801C products.
Marking Information
1
3
281
2
V X YY M1
6
4
5
Figure 14. Top Mark
Table 1. Top Mark Definitions
1
Fairchild Logo
2
Device Number
3
DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
4
One-Digit Year Code, e.g., “5”
5
Digit Work Week, Ranging from “01” to “53”
6
Assembly Package Code
©2011 Fairchild Semiconductor Corporation
HMHA281, HMHA2801 Series Rev. 5.2
www.fairchildsemi.com
8
HMHA281, HMHA2801 Series — 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers
Ordering Information
0.3-0.51
2
1
1.52
0.61
3
4.83
7.87
4.40 (Typ)
6.30-7.29
PIN ONE
4
0.55-0.75
2.31-2.69
1.27
2.39 (Max)
1.95-2.11
0-0.20
LAND PATTERN RECOMMENDATION
R0.15 (Typ)
R0.15 (Typ)
1.27+/- .127
0.30-0.89
1.19 (Typ)
NOTES:
A) NO STANDARD APPLIES TO THIS PACKAGE
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSION
D) DRAWING FILENAME AND REVSION : MKT-MFP04AREV4.
0.18-0.25
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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