HMHA281, HMHA2801 Series
4-Pin Half-Pitch Mini-Flat
Phototransistor
Optocouplers
Description
The HMHA281 and HMHA2801 series devices consist of a gallium
arsenide infrared emitting diode driving a silicon phototransistor in a
compact 4−pin mini−flat package. The lead pitch is 1.27 mm.
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ANODE 1
Features
• Compact 4−Pin Package
2.4 mm Maximum Standoff Height
Half−Pitch Leads for Optimum Board Space Savings
Current Transfer Ratio:
♦ HMHA281: 50% to 600%
♦ HMHA2801: 80% to 600%
♦ HMHA2801A: 80% to 160%
♦ HMHA2801B: 130% to 260%
♦ HMHA2801C: 200% to 400%
Safety and Regulatory Approvals:
♦ UL1577, 3.750 VACRMS for 1 Minute
♦ DIN−EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage
These Devices are Pb−Free and are RoHS Compliant
♦
•
•
•
4 COLLECTOR
CATHODE 2
3 EMITTER
♦
Phototransistor Optocoupler
MPF4
CASE 100AL
MARKING DIAGRAM
Applications
•
•
•
•
•
Digital Logic Inputs
Microprocessor Inputs
Power Supply Monitor
Twisted Pair Line Receiver
Telephone Line Receiver
ON 281
VXYYM1
ON
281
V
X
YY
M1
= ON Semiconductor Logo
= Device Number
= DIN EN/IEC60747−5−5 Option (only
appears on component ordered with this
option)
= One−Digit Year Code, e.g., ”5”
= Digit Work Week, Ranging from ”01” to ”53”
= Assembly Package Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
© Semiconductor Components Industries, LLC, 2011
August, 2018 − Rev. 6
1
Publication Order Number:
HMHA2801B/D
HMHA281, HMHA2801 Series
Table 1. SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical
insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.)
Characteristics
Parameter
Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage
< 150 VRMS
I–IV
< 300 VRMS
I–III
Climatic Classification
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
Symbol
175
Value
Unit
Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test
with tm = 10 s, Partial Discharge < 5 pC
904
Vpeak
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test
with tm = 1 s, Partial Discharge < 5 pC
1060
Vpeak
VIORM
Maximum Working Insulation Voltage
565
Vpeak
VIOTM
Highest Allowable Over−Voltage
4000
Vpeak
External Creepage
≥5
mm
External Clearance
≥5
mm
VPR
Parameter
DTI
Distance Through Insulation (Insulation Thickness)
≥0.4
mm
TS
Case Temperature (Note 1)
150
°C
IS, INPUT
Input Current (Note 1)
200
mA
PS, OUTPUT
Output Power (Note 1)
300
mW
Insulation Resistance at TS, VIO = 500 V (Note 1)
>109
W
RIO
1. Safety limit values – maximum values allowed in the event of a failure.
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2
HMHA281, HMHA2801 Series
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified)
Symbol
Parameter
Value
Unit
TOTAL PACKAGE
TSTG
Storage Temperature
−55 to +125
°C
TOPR
Operating Temperature
−55 to +100
°C
TJ
Junction Temperature
−40 to +125
°C
PD
Total Device Power Dissipation @ TA = 25°C
210
mW
Derate Above 25°C
2.1
mW/°C
IF (avg)
Continuous Forward Current
50
mA
IF (pk)
Peak Forward Current (1 ms pulse, 300 pps)
1
A
VR
Reverse Input Voltage
6
V
PD
LED Power Dissipation @ TA = 25°C
60
mW
Derate Above 25°C
0.6
mW/°C
Continuous Collector Current
50
mA
VCEO
Collector−Emitter Voltage
80
V
VECO
Emitter−Collector Voltage
7
V
Detector Power Dissipation @ TA = 25°C
150
mW
Derate Above 25°C
1.5
mW/°C
EMITTER
DETECTOR
IC
PD
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
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3
HMHA281, HMHA2801 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Test Conditions
Device
Min
Typ
Max
Unit
INDIVIDUAL COMPONENT CHARACTERISTICS
Emitter
VF
Forward Voltage
IF = 10 mA
All
1.0
−
1.3
V
IR
Reverse Current
VR = 5 V
All
−
−
5
mA
BVCEO
Breakdown Voltage Collector to Emitter
IC = 0.5 mA, IF = 0
All
80
−
−
V
BVECO
Emitter to Collector
IE = 100 mA, IF = 0
All
7
−
−
ICEO
Collector Dark Current
VCE = 80 V, IF = 0
All
−
−
100
nA
CCE
Capacitance
VCE = 0 V, f = 1 MHz
All
−
10
−
pF
IF = 5 mA, VCE = 5 V
HMHA281
50
−
600
%
HMHA2801
80
−
600
HMHA2801A
80
−
160
HMHA2801B
130
−
260
HMHA2801C
200
−
400
IF = 8 mA, IC = 2.4 mA
HMHA281
−
−
0.4
IF = 10 mA, IC = 2 mA
HMHA2801,
HMHA2801A,
HMHA2801B,
HMHA2801C
−
−
0.3
Detector
TRANSFER CHARACTERISTICS
CTR
VCE (SAT)
DC Current Transfer Ratio
Saturation Voltage
tr
Rise Time (Non−Saturated)
IC = 2 mA, VCE = 5 V, RL = 100 W
All
−
3
−
tf
Fall Time (Non−Saturated)
IC = 2 mA, VCE = 5 V, RL = 100 W
All
−
3
−
1 Minute
All
3750
−
−
V
ms
ISOLATION CHARACTERISTICS
VISO
Steady State Isolation Voltage
VACRMS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
HMHA281, HMHA2801 Series
TYPICAL PERFORMANCE CHARACTERISTICS
100
TA = 25°C
IC, Collector Current (mA)
IF, Forward Current (mA)
100
10
1
0.6
0.8
1.0
1.2
1.4
VF, Forward Voltage (V)
VCE = 0.4 V
1
0.1
1.6
Normalized CTR (IF) / CTR (5 mA)
IC / IF, Current Transfer Ratio (%)
TA = 25°C
VCE = 10 V
VCE = 5 V
100
VCE = 0.4 V
10
IF, Forward Current (mA)
1
2.0
1.5
IF = 10 mA
IF = 5 mA
1.0
0.0
−0.5
−40
100
−20
0
20
40
60
80
TA, Ambient Temperature (5C)
VCE = 5 V
IF = 5 mA
IF = 10 mA
IF = 1 mA
1
IF = 0.5 mA
−20
0
100
Figure 4. Normalized CTR vs. Temperature
IF = 25 mA
10
Normalized to:
IF = 5 mA
VCE = 5 V
TA = 25°C
IF = 0.5 mA
IF = 1 mA
100
0.1
−40
100
0.5
Figure 3. Current Transfer Ratio vs. Forward Current
IC, Collector Current (mA)
10
IF, Forward Current (mA)
Figure 2. Collector Current vs. Forward Current
1000
1
VCE = 5 V
10
Figure 1. Forward Current vs. Forward Voltage
10
VCE = 10 V
20
40
60
80
100
TA, Ambient Temperature (5C)
Figure 5. Collector Current vs. Temperature
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5
HMHA281, HMHA2801 Series
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
18
TA = 25°C
IF = 40 mA
40
IF = 50 mA
IF = 30 mA
IF = 20 mA
30
IF = 10 mA
IF = 5.0 mA
20
10
0
1
2
3
4
5
6
7
8
9
VCE, Collector−Emitter Voltage, (V)
IF = 20 mA
12
10
8
IF = 0.5 mA
IF = 10 mA
6
4
IF = 2 mA
2
0
0.0
10
1000
Switching Time (ms)
VCE = 10 V
20
40
60
80
TA, Ambient Temperature (5C)
0.26
tON
1
0.1
100
tOFF
10
Figure 8. Collector Dark Current vs.
Temperature
0.28
1
10
RL, Load Resistance (kW)
IF = 5 mA
IC = 1 mA
0.22
0.20
0.18
0.16
0.14
0.12
−40 −20
100
Figure 9. Switching Time vs. Load Resistance
0.24
0.10
1.0
tS
VCE = 5 V
0.30
TA = 25°C
IF = 16 mA
VCC = 5 V
100
0.1
VCE(SAT), Collector−Emitter
Saturation Voltage (V)
ICEO, Collector Dark Current (mA)
VCE = 48 V
VCE = 24 V
0.001
0
IF = 1.0 mA
Figure 7. Collector Current vs.
Collector−Emiter Voltage
10
0.01
IF = 5.0 mA
0.2
0.4
0.6
0.8
VCE, Collector−Emitter Voltage, (V)
Figure 6. Collector Current vs.
Collector−Emiter Voltage
1
IF = 50 mA
IF = 30 mA
14
IF = 1.0 mA
0
IF = 40 mA
16
IC, Collector Current (mA)
IC, Collector Current (mA)
50
0
20
40
60
80
100
TA, Ambient Temperature (5C)
Figure 10. Collector−Emitter Saturation Voltage
vs Temperature
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6
HMHA281, HMHA2801 Series
REFLOW PROFILE
260
245
240
220
Max. Ramp−up Rate = 3°C/S
Max. Ramp−down Rate = 6°C/S
TP
tP
TL
Tsmax
200
tL
Temperature (5C)
180
160
Tsmin
140
ts
120
100
80
60
40
20
0
120
Time 25°C to Peak
240
360
Figure 11. Reflow Profile
Profile Freature
Pb−Free Assembly Profile
Temperature Minimum (Tsmin)
150°C
Temperature Maximum (Tsmax)
200°C
Time (tS) from (Tsmin to Tsmax)
60 – 120 seconds
Ramp−up Rate (tL to tP)
3°C / second maximum
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60 – 150 seconds
Peak Body Package Temperature
245°C +0°C / –5°C
Time (tP) within 5°C of 245°C
30 seconds
Ramp−down Rate (TP to TL)
6°C / second maximum
Time 25°C to Peak Temperature
8 minutes maximum
ORDERING INFORMATION
Part Number
Package
Shipping†
HMHA2801
Half Pitch Mini−Flat 4−Pin
100 Units / Tube
HMHA2801R2
Half Pitch Mini−Flat 4−Pin
2500 / Tape & Reel
HMHA2801V
Half Pitch Mini−Flat 4−Pin, DIN EN/IEC60747−5−5 Option
100 Units / Tube
HMHA2801R2V
Half Pitch Mini−Flat 4−Pin, DIN EN/IEC60747−5−5 Option
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
MFP4 2.5X4.4, 1.27P
CASE 100AL
ISSUE O
DATE 31 AUG 2016
0.3−0.51
2
1
1.52
0.61
3
4.83
7.87
4.40 (Typ)
6.30−7.29
PIN ONE
4
0.55−0.75
2.31−2.69
1.27
2.39 (Max)
LAND PATTERN RECOMMENDATION
1.95−2.11
0−0.20
R0.15 (Typ)
2̇\:̇
R0.15 (Typ)
1.27+/− .127
0.30−0.89
0.18−0.25
1.19 (Typ)
NOTES:
A) NO STANDARD APPLIES TO THIS PACKAGE
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSION
DOCUMENT NUMBER:
STATUS:
98AON13485G
ON SEMICONDUCTOR STANDARD
NEW STANDARD:
© Semiconductor Components Industries, LLC, 2002
October, DESCRIPTION:
2002 − Rev. 0
MFP4 2.5X4.4, 1.27P
http://onsemi.com
1
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
Case Outline Number:
PAGE 1 OFXXX
2
DOCUMENT NUMBER:
98AON13485G
PAGE 2 OF 2
ISSUE
O
REVISION
RELEASED FOR PRODUCTION FROM FAIRCHILD MFP04A TO ON
SEMICONDUCTOR. REQ. BY B. MARQUIS.
DATE
31 AUG 2016
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Case Outline Number:
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