HMHA281R2_F132

HMHA281, HMHA2801 Series 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers Description The HMHA281 and HMHA2801 series devices consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4−pin mini−flat package. The lead pitch is 1.27 mm. www.onsemi.com ANODE 1 Features • Compact 4−Pin Package 2.4 mm Maximum Standoff Height Half−Pitch Leads for Optimum Board Space Savings Current Transfer Ratio: ♦ HMHA281: 50% to 600% ♦ HMHA2801: 80% to 600% ♦ HMHA2801A: 80% to 160% ♦ HMHA2801B: 130% to 260% ♦ HMHA2801C: 200% to 400% Safety and Regulatory Approvals: ♦ UL1577, 3.750 VACRMS for 1 Minute ♦ DIN−EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage These Devices are Pb−Free and are RoHS Compliant ♦ • • • 4 COLLECTOR CATHODE 2 3 EMITTER ♦ Phototransistor Optocoupler MPF4 CASE 100AL MARKING DIAGRAM Applications • • • • • Digital Logic Inputs Microprocessor Inputs Power Supply Monitor Twisted Pair Line Receiver Telephone Line Receiver ON 281 VXYYM1 ON 281 V X YY M1 = ON Semiconductor Logo = Device Number = DIN EN/IEC60747−5−5 Option (only appears on component ordered with this option) = One−Digit Year Code, e.g., ”5” = Digit Work Week, Ranging from ”01” to ”53” = Assembly Package Code ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2011 August, 2018 − Rev. 6 1 Publication Order Number: HMHA2801B/D HMHA281, HMHA2801 Series Table 1. SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.) Characteristics Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I–IV < 300 VRMS I–III Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 904 Vpeak Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1060 Vpeak VIORM Maximum Working Insulation Voltage 565 Vpeak VIOTM Highest Allowable Over−Voltage 4000 Vpeak External Creepage ≥5 mm External Clearance ≥5 mm VPR Parameter DTI Distance Through Insulation (Insulation Thickness) ≥0.4 mm TS Case Temperature (Note 1) 150 °C IS, INPUT Input Current (Note 1) 200 mA PS, OUTPUT Output Power (Note 1) 300 mW Insulation Resistance at TS, VIO = 500 V (Note 1) >109 W RIO 1. Safety limit values – maximum values allowed in the event of a failure. www.onsemi.com 2 HMHA281, HMHA2801 Series ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol Parameter Value Unit TOTAL PACKAGE TSTG Storage Temperature −55 to +125 °C TOPR Operating Temperature −55 to +100 °C TJ Junction Temperature −40 to +125 °C PD Total Device Power Dissipation @ TA = 25°C 210 mW Derate Above 25°C 2.1 mW/°C IF (avg) Continuous Forward Current 50 mA IF (pk) Peak Forward Current (1 ms pulse, 300 pps) 1 A VR Reverse Input Voltage 6 V PD LED Power Dissipation @ TA = 25°C 60 mW Derate Above 25°C 0.6 mW/°C Continuous Collector Current 50 mA VCEO Collector−Emitter Voltage 80 V VECO Emitter−Collector Voltage 7 V Detector Power Dissipation @ TA = 25°C 150 mW Derate Above 25°C 1.5 mW/°C EMITTER DETECTOR IC PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 3 HMHA281, HMHA2801 Series ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Symbol Test Conditions Device Min Typ Max Unit INDIVIDUAL COMPONENT CHARACTERISTICS Emitter VF Forward Voltage IF = 10 mA All 1.0 − 1.3 V IR Reverse Current VR = 5 V All − − 5 mA BVCEO Breakdown Voltage Collector to Emitter IC = 0.5 mA, IF = 0 All 80 − − V BVECO Emitter to Collector IE = 100 mA, IF = 0 All 7 − − ICEO Collector Dark Current VCE = 80 V, IF = 0 All − − 100 nA CCE Capacitance VCE = 0 V, f = 1 MHz All − 10 − pF IF = 5 mA, VCE = 5 V HMHA281 50 − 600 % HMHA2801 80 − 600 HMHA2801A 80 − 160 HMHA2801B 130 − 260 HMHA2801C 200 − 400 IF = 8 mA, IC = 2.4 mA HMHA281 − − 0.4 IF = 10 mA, IC = 2 mA HMHA2801, HMHA2801A, HMHA2801B, HMHA2801C − − 0.3 Detector TRANSFER CHARACTERISTICS CTR VCE (SAT) DC Current Transfer Ratio Saturation Voltage tr Rise Time (Non−Saturated) IC = 2 mA, VCE = 5 V, RL = 100 W All − 3 − tf Fall Time (Non−Saturated) IC = 2 mA, VCE = 5 V, RL = 100 W All − 3 − 1 Minute All 3750 − − V ms ISOLATION CHARACTERISTICS VISO Steady State Isolation Voltage VACRMS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 HMHA281, HMHA2801 Series TYPICAL PERFORMANCE CHARACTERISTICS 100 TA = 25°C IC, Collector Current (mA) IF, Forward Current (mA) 100 10 1 0.6 0.8 1.0 1.2 1.4 VF, Forward Voltage (V) VCE = 0.4 V 1 0.1 1.6 Normalized CTR (IF) / CTR (5 mA) IC / IF, Current Transfer Ratio (%) TA = 25°C VCE = 10 V VCE = 5 V 100 VCE = 0.4 V 10 IF, Forward Current (mA) 1 2.0 1.5 IF = 10 mA IF = 5 mA 1.0 0.0 −0.5 −40 100 −20 0 20 40 60 80 TA, Ambient Temperature (5C) VCE = 5 V IF = 5 mA IF = 10 mA IF = 1 mA 1 IF = 0.5 mA −20 0 100 Figure 4. Normalized CTR vs. Temperature IF = 25 mA 10 Normalized to: IF = 5 mA VCE = 5 V TA = 25°C IF = 0.5 mA IF = 1 mA 100 0.1 −40 100 0.5 Figure 3. Current Transfer Ratio vs. Forward Current IC, Collector Current (mA) 10 IF, Forward Current (mA) Figure 2. Collector Current vs. Forward Current 1000 1 VCE = 5 V 10 Figure 1. Forward Current vs. Forward Voltage 10 VCE = 10 V 20 40 60 80 100 TA, Ambient Temperature (5C) Figure 5. Collector Current vs. Temperature www.onsemi.com 5 HMHA281, HMHA2801 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 18 TA = 25°C IF = 40 mA 40 IF = 50 mA IF = 30 mA IF = 20 mA 30 IF = 10 mA IF = 5.0 mA 20 10 0 1 2 3 4 5 6 7 8 9 VCE, Collector−Emitter Voltage, (V) IF = 20 mA 12 10 8 IF = 0.5 mA IF = 10 mA 6 4 IF = 2 mA 2 0 0.0 10 1000 Switching Time (ms) VCE = 10 V 20 40 60 80 TA, Ambient Temperature (5C) 0.26 tON 1 0.1 100 tOFF 10 Figure 8. Collector Dark Current vs. Temperature 0.28 1 10 RL, Load Resistance (kW) IF = 5 mA IC = 1 mA 0.22 0.20 0.18 0.16 0.14 0.12 −40 −20 100 Figure 9. Switching Time vs. Load Resistance 0.24 0.10 1.0 tS VCE = 5 V 0.30 TA = 25°C IF = 16 mA VCC = 5 V 100 0.1 VCE(SAT), Collector−Emitter Saturation Voltage (V) ICEO, Collector Dark Current (mA) VCE = 48 V VCE = 24 V 0.001 0 IF = 1.0 mA Figure 7. Collector Current vs. Collector−Emiter Voltage 10 0.01 IF = 5.0 mA 0.2 0.4 0.6 0.8 VCE, Collector−Emitter Voltage, (V) Figure 6. Collector Current vs. Collector−Emiter Voltage 1 IF = 50 mA IF = 30 mA 14 IF = 1.0 mA 0 IF = 40 mA 16 IC, Collector Current (mA) IC, Collector Current (mA) 50 0 20 40 60 80 100 TA, Ambient Temperature (5C) Figure 10. Collector−Emitter Saturation Voltage vs Temperature www.onsemi.com 6 HMHA281, HMHA2801 Series REFLOW PROFILE 260 245 240 220 Max. Ramp−up Rate = 3°C/S Max. Ramp−down Rate = 6°C/S TP tP TL Tsmax 200 tL Temperature (5C) 180 160 Tsmin 140 ts 120 100 80 60 40 20 0 120 Time 25°C to Peak 240 360 Figure 11. Reflow Profile Profile Freature Pb−Free Assembly Profile Temperature Minimum (Tsmin) 150°C Temperature Maximum (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60 – 120 seconds Ramp−up Rate (tL to tP) 3°C / second maximum Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60 – 150 seconds Peak Body Package Temperature 245°C +0°C / –5°C Time (tP) within 5°C of 245°C 30 seconds Ramp−down Rate (TP to TL) 6°C / second maximum Time 25°C to Peak Temperature 8 minutes maximum ORDERING INFORMATION Part Number Package Shipping† HMHA2801 Half Pitch Mini−Flat 4−Pin 100 Units / Tube HMHA2801R2 Half Pitch Mini−Flat 4−Pin 2500 / Tape & Reel HMHA2801V Half Pitch Mini−Flat 4−Pin, DIN EN/IEC60747−5−5 Option 100 Units / Tube HMHA2801R2V Half Pitch Mini−Flat 4−Pin, DIN EN/IEC60747−5−5 Option 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS MFP4 2.5X4.4, 1.27P CASE 100AL ISSUE O DATE 31 AUG 2016 0.3−0.51 2 1 1.52 0.61 3 4.83 7.87 4.40 (Typ) 6.30−7.29 PIN ONE 4 0.55−0.75 2.31−2.69 1.27 2.39 (Max) LAND PATTERN RECOMMENDATION 1.95−2.11 0−0.20 R0.15 (Typ) 2̇\:̇ R0.15 (Typ) 1.27+/− .127 0.30−0.89 0.18−0.25 1.19 (Typ) NOTES: A) NO STANDARD APPLIES TO THIS PACKAGE B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSION DOCUMENT NUMBER: STATUS: 98AON13485G ON SEMICONDUCTOR STANDARD NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 MFP4 2.5X4.4, 1.27P http://onsemi.com 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. Case Outline Number: PAGE 1 OFXXX 2 DOCUMENT NUMBER: 98AON13485G PAGE 2 OF 2 ISSUE O REVISION RELEASED FOR PRODUCTION FROM FAIRCHILD MFP04A TO ON SEMICONDUCTOR. REQ. BY B. MARQUIS. DATE 31 AUG 2016 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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