HN1B01FDW1T1G

HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A − Machine Model: C Pb−Free Package is Available (6) (5) (4) Q1 Q2 (1) (2) (3) MAXIMUM RATINGS (TA = 25°C) Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 60 50 7.0 200 Unit Vdc Vdc Vdc mAdc 6 5 4 3 12 SC−74 CASE 318F STYLE 3 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. R9 M THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 380 150 −55 to +150 Unit mW °C °C R9 = Device Code M = Date Code ORDERING INFORMATION Device HN1B01FDW1T1 HN1B01FDW1T1G Package SC−74 Shipping† 3000/Tape & Reel SC−74 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 March, 2005 − Rev. 2 Publication Order Number: HN1B01FDW1T1/D HN1B01FDW1T1 Q1: PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector−Base Cutoff Current (VCB = 45 Vdc, IE = 0) Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) DC Current Gain (Note 1) (VCE = 6.0 Vdc, IC = 2.0 mAdc) Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO − − − hFE −200 VCE(sat) −0.15 −400 −0.3 Vdc −0.1 −2.0 −1.0 Min −50 −60 −7.0 − Max − − − −0.1 Unit Vdc Vdc Vdc mAdc mAdc mAdc mAdc − Q2: NPN ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector−Base Cutoff Current (VCB = 45 Vdc, IE = 0) Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) DC Current Gain (Note 1) (VCE = 6.0 Vdc, IC = 2.0 mAdc) Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) 1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO − − − hFE VCE(sat) 200 0.15 0.1 2.0 1.0 400 0.25 Min 50 60 7.0 − Max − − − 0.1 Unit Vdc Vdc Vdc mAdc mAdc mAdc mAdc − Vdc http://onsemi.com 2 HN1B01FDW1T1 Typical Electrical Characteristics: PNP Transistor −200 IC, COLLECTOR CURRENT (mA) −2.0 mA −160 −1.5 mA −1.0 mA hFE, DC CURRENT GAIN TA = 100°C 1000 −120 −0.5 mA −80 IB = −0.2 mA −40 TA = 25°C 0 0 −1 −2 −3 −4 −5 −6 VCE, COLLECTOR−EMITTER VOLTAGE (V) 25°C 100 −25°C 10 −1 VCE = −1.0 V −10 −100 −1000 IC, COLLECTOR CURRENT (mA) Figure 1. Collector Saturation Region VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) Figure 2. DC Current Gain 1000 TA = 100°C −1 IC/IB = 10 TA = 100°C 25°C −0.1 −25°C hFE, DC CURRENT GAIN 25°C 100 −25°C 10 −1 VCE = −6.0 V −10 −100 −1000 −0.01 −1 −10 −100 −1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain Figure 4. VCE(sat) versus IC −10 BASE−EMITTER SATURATION VOLTAGE (V) −10,000 COMMON EMITTER VCE = 6 V IB, BASE CURRENT (mA) −1000 TA = 100°C 25°C −25°C −100 −1 −10 TA = 25°C IC/IB = 10 −10 −100 −1000 −1 −0.1 0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9 VBE, BASE−EMITTER VOLTAGE (V) −1 −0.1 −1 IC, COLLECTOR CURRENT (mA) Figure 5. VBE(sat) versus IC Figure 6. Base−Emitter Voltage http://onsemi.com 3 HN1B01FDW1T1 Typical Electrical Characteristics: NPN Transistor 280 IC, COLLECTOR CURRENT (mA) 6.0 mA 5.0 mA 240 200 1.0 mA 160 120 80 IB = 0.2 mA 40 0 0 1 2 TA = 25°C 3 4 5 6 VCE, COLLECTOR−EMITTER VOLTAGE (V) 10 1 VCE = 1.0 V 10 100 1000 0.5 mA 3.0 mA 2.0 mA hFE, DC CURRENT GAIN TA = 100°C 25°C −25°C 100 1000 IC, COLLECTOR CURRENT (mA) Figure 7. Collector Saturation Voltage Figure 8. DC Current Gain 1000 TA = 100°C 25°C −25°C 100 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) 1 IC/IB = 10 hFE, DC CURRENT GAIN TA = 100°C 0.1 25°C −25°C 10 1 VCE = 6.0 V 10 100 1000 0.01 1 10 100 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 9. DC Current Gain Figure 10. VCE(sat) versus IC 10 BASE−EMITTER SATURATION VOLTAGE (V) 10,000 COMMON EMITTER VCE = 6 V IB, BASE CURRENT (mA) 1000 −25°C 100 TA = 100°C 25°C 1 10 TA = 25°C IC/IB = 10 1 10 100 1000 1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.1 IC, COLLECTOR CURRENT (mA) VBE, BASE−EMITTER VOLTAGE (V) Figure 11. VBE(sat) versus IC Figure 12. Base−Emitter Voltage http://onsemi.com 4 HN1B01FDW1T1 PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE K A L 6 5 1 2 4 S 3 B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03 OBSOLETE. NEW STANDARD 318F−04. DIM A B C D G H J K L M S INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0649 0_ 10 _ 0.0985 0.1181 MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.65 0_ 10 _ 2.50 3.00 D G M 0.05 (0.002) H C K J STYLE 3: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.074 0.7 0.028 0.95 0.037 0.95 0.037 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 HN1B01FDW1T1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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