HUF76633S3ST_F085

HUF76633S3ST_F085 N-Channel Logic Level UltraFET® Power MOSFET 100V, 39A, 35mΩ D D Features „ Typ rDS(on) = 28mΩ at VGS = 10V, ID = 39A „ Typ Qg(tot) = 56nC at VGS = 10V, ID = 20A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101 TO-263AB Applications S S „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Parameter Ratings 100 Units V ±16 V Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 39 Pulsed Drain Current TC = 25°C See Figure4 Single Pulse Avalanche Energy (Note 2) A 267 mJ Power Dissipation 183 W Derate above 25oC 1.22 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance Junction to Case RθJA Maximum Thermal Resistance Junction to Ambient -55 to + 175 oC 0.82 oC/W 43 oC/W (Note 3) Package Marking and Ordering Information Device Marking HUF76633S3ST Device HUF76633S3ST_F085 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 0.55mH, IAS = 31.2A, VDD = 100V during inductor charging and VDD = 0V during time in avalanche 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. ©2013 Fairchild Semiconductor Corporation HUF76633S3ST_F085 Rev. C1 1 www.fairchildsemi.com HUF76633S3ST_F085 N-Channel Logic Level UltraFET ® Power MOSFET April 2013 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Drain to Source Leakage Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 100V, VGS = 0V 100 - - V - - 1 μA TJ = 25oC TJ = 175oC(Note 4) - - 1 mA - - ±100 nA 1.0 1.6 3.0 V - 28 35 mΩ VGS = ±16V On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 39A, VGS= 10V ID = 27A, VGS= 4.5V TJ = 25oC TJ = 175oC(Note 4) - TJ = 25oC TJ = 175oC(Note 4) 76 95 mΩ 31 37 mΩ 76 91 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge - VDS = 25V, VGS = 0V, f = 1MHz VDD = 50V ID = 20A - 1810 - pF - 304 - pF - 48 - pF - 1.9 - Ω - 56 63 nC - 3.3 4 nC - 4.7 - nC 15 - nC Switching Characteristics ton Turn-On Time - - 34 ns td(on) Turn-On Delay Time - 8 - ns tr Rise Time td(off) Turn-Off Delay Time tf toff - 16 - ns - 46 - ns Fall Time - 6 - ns Turn-Off Time - - 59 ns V VDD = 50V, ID = 20A, VGS = 10V, RGEN = 8.2Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage Trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 27A, VGS = 0V - - 1.25 ISD = 13.5A, VGS = 0V - - 1.0 V IF = 20A, dISD/dt = 100A/μs, VDD=80V - 86 93 ns - 275 320 nC Notes: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. HUF76633S3ST_F085 Rev. C1 2 www.fairchildsemi.com HUF76633S3ST_F085 N-Channel Logic Level UltraFET ® Power MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 50 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 40 VGS = 10V 30 VGS = 4.5V 20 10 0 25 175 50 75 100 125 TC, CASE TEMPERATURE(oC) 150 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature Figure 1. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 10 -1 10 0 10 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 TC = 25oC VGS = 10V FOR TEMPERATURES IDM, PEAK CURRENT (A) ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC I = I2 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 10 10 -1 10 0 10 1 10 Figure 4. Peak Current Capability HUF76633S3ST_F085 Rev. C1 3 www.fairchildsemi.com HUF76633S3ST_F085 N-Channel Logic Level UltraFET ® Power MOSFET Typical Characteristics IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 100 100us 10 1ms 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.1 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 10ms 100ms 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) TJ = 175oC TJ = -55oC 10 0 1 1 10 100 1000 100 30 TJ = 25oC 0.1 Figure 6. Unclamped Inductive Switching Capability VDD = 5V 20 0.01 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 40 STARTING TJ = 150oC tAV, TIME IN AVALANCHE (ms) IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 50 STARTING TJ = 25oC 10 1 0.001 300 Figure 5. Forward Bias Safe Operating Area 2 3 VGS, GATE TO SOURCE VOLTAGE (V) VGS = 0 V 10 TJ = 175 oC TJ = 25 oC 1 0.1 0.2 4 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics 120 60 100 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 80 VGS 60 10V Top 8V 6V 5V 4.5V 4V Bottom 40 20 80μs PULSE WIDTH Tj=25oC 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 VGS 10V Top 8V 6V 5V 4.5V 4V Bottom 30 20 10 0 0 5 Figure 9. Saturation Characteristics HUF76633S3ST_F085 Rev. C1 50 80μs PULSE WIDTH Tj=175oC 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 10. Saturation Characteristics 4 www.fairchildsemi.com HUF76633S3ST_F085 N-Channel Logic Level UltraFET ® Power MOSFET Typical Characteristics ID = 39A NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 150 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 120 TJ = 175oC 90 60 30 TJ = 25oC 0 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. Rdson vs Gate Voltage 2.4 1.8 1.2 0.6 ID = 39A VGS = 10V 0.0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 1.2 VGS = VDS ID = 250μA 1.2 ID = 1mA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX Figure 12. Normalized Rdson vs Junction Temperature 1.4 1.1 1.0 1.0 0.8 0.9 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.8 -80 200 Figure 13. Normalized Gate Threshold Voltage vs Temperature VGS, GATE TO SOURCE VOLTAGE(V) Ciss 1000 Coss 100 Crss f = 1MHz VGS = 0V 10 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 15. Capacitance vs Drain to Source Voltage HUF76633S3ST_F085 Rev. C1 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10000 CAPACITANCE (pF) 3.0 10 ID = 20A 8 VDD = 40V 6 VDD = 50V VDD = 60V 4 2 0 0 10 20 30 40 Qg, GATE CHARGE(nC) 50 60 Figure 16. Gate Charge vs Gate to Source Voltage 5 www.fairchildsemi.com HUF76633S3ST_F085 N-Channel Logic Level UltraFET ® Power MOSFET Typical Characteristics tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 HUF76633S3ST_F085 Rev. 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