HUFA75639S3ST_F085A

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. HUFA75639S3ST-F085A 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER HUFA75639S3ST-F085A PACKAGE BRAND TO263AB 75639S G NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUFA75639S3ST. S Packaging DRAIN (FLANGE) GATE SOURCE JEDEC TO-263AB ©2012 Semiconductor Components Industries, LLC. August-2017, Rev. 3 Publication Order Number: HUFA75639S3ST-F085A/D HUFA75639S3ST-F085A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg UNITS V V V 100 100 ±20 56 Figure 4 Figures 6, 14, 15 200 1.35 -55 to 175 A W W/oC oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS 100 - - V VDS = 95V, VGS = 0V - - 1 µA VDS = 90V, VGS = 0V, TC = 150oC - - 250 µA VGS = ±20V - - ±100 nA OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current BVDSS IDSS IGSS ID = 250µA, VGS = 0V (Figure 11) ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 10) 2 - 4 V Drain to Source On Resistance rDS(ON) ID = 56A, VGS = 10V (Figure 9) - 0.021 0.025 Ω THERMAL SPECIFICATIONS Thermal Resistance Junction to Case RθJC (Figure 3) - - 0.74 oC/W Thermal Resistance Junction to Ambient RθJA TO-247 - - 30 oC/W TO-220, TO-263 - - 62 oC/W VDD = 50V, ID ≅ 56A, RL = 0.89Ω, VGS = 10V, RGS = 5.1Ω - - 110 ns - 15 - ns tr - 60 - ns td(OFF) - 20 - ns tf - 25 - ns tOFF - - 70 ns - 110 130 nC - 57 75 nC - 3.7 4.5 nC SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time tON td(ON) GATE CHARGE SPECIFICATIONS Qg(TOT) VGS = 0V to 20V Gate Charge at 10V Qg(10) VGS = 0V to 10V Threshold Gate Charge Qg(TH) VGS = 0V to 2V Total Gate Charge VDD = 50V, ID ≅ 56A, RL = 0.89Ω Ig(REF) = 1.0mA (Figure 13) Gate to Source Gate Charge Qgs - 9.8 - nC Gate to Drain “Miller” Charge Qgd - 24 - nC www.onsemi.com 2 HUFA75639S3ST-F085A TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS - 2000 - pF - 500 - pF - 65 - pF CAPACITANCE SPECIFICATIONS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) Source to Drain Diode Specifications SYMBOL PARAMETER Source to Drain Diode Voltage MIN TYP MAX UNITS ISD = 56A - - 1.25 V trr ISD = 56A, dISD/dt = 100A/µs - - 110 ns QRR ISD = 56A, dISD/dt = 100A/µs - - 320 nC VSD Reverse Recovery Time Reverse Recovered Charge TEST CONDITIONS 1.2 60 1.0 50 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 40 30 20 10 0.2 0 0 0 25 50 75 100 125 150 25 175 50 TC , CASE TEMPERATURE (oC) 75 100 125 150 175 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 2 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 ZθJC, NORMALIZED THERMAL IMPEDANCE 1 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE www.onsemi.com 3 100 101 HUFA75639S3ST-F085A Typical Performance Curves (Continued) IDM , PEAK CURRENT (A) 1000 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC I = I25 150 100 VGS = 10V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10 10-5 10-4 10-3 10-2 10-1 100 101 t, PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY 300 1000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) TJ = MAX RATED TC = 25oC 100 100µs 10 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 10ms VDSS(MAX) = 100V 100 10 100 STARTING TJ = 25oC STARTING TJ = 150oC 10 0.001 1 1 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 200 VDS , DRAIN TO SOURCE VOLTAGE (V) 1 0.1 NOTE: Refer to ON Semiconductor Application Notes AN9321 and AN9322. FIGURE 5. FORWARD BIAS SAFE OPERATING AREA FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY 100 100 VGS = 6V 80 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.01 tAV, TIME IN AVALANCHE (ms) VGS = 20V VGS = 10V 60 VGS = 7V 40 VGS = 5V 20 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX TC = 25oC 0 0 1 2 3 4 5 6 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 15V 80 175oC 60 40 20 25oC -55oC 0 0 7 1.5 3.0 4.5 6.0 VGS , GATE TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 7. SATURATION CHARACTERISTICS FIGURE 8. TRANSFER CHARACTERISTICS www.onsemi.com 4 7.5 HUFA75639S3ST-F085A Typical Performance Curves 1.2 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 56A VGS = VDS, ID = 250µA NORMALIZED GATE 2.5 2.0 1.5 1.0 THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE ON RESISTANCE 3.0 (Continued) 1.0 0.8 0.5 0 0.6 -80 -40 0 40 80 120 160 200 -80 -40 TJ, JUNCTION TEMPERATURE (oC) 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 1.2 3000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD ID = 250µA 2500 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 0 1.1 1.0 2000 CISS 1500 1000 COSS 500 CRSS 0.9 -80 0 -40 0 40 80 120 160 200 0 10 TJ , JUNCTION TEMPERATURE (oC) 20 50 60 FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 10 VGS , GATE TO SOURCE VOLTAGE (V) 40 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 8 6 4 WAVEFORMS IN DESCENDING ORDER: ID = 56A ID = 37A ID = 18A 2 VDD = 50V 0 0 30 10 20 30 40 50 60 Qg, GATE CHARGE (nC) NOTE: Refer to ON Semiconductor Application Notes AN7254 and AN7260. FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT www.onsemi.com 5 HUFA75639S3ST-F085A Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN REQUIRED PEAK IAS IAS + RG - VGS VDS VDD VDD DUT tP 0V IAS 0 0.01Ω tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS VDS VDD RL Qg(TOT) VDS VGS = 20V VGS Qg(10) + VDD VGS = 10V VGS DUT VGS = 2V IG(REF) 0 Qg(TH) Qgs Qgd Ig(REF) 0 FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORM VDS tON tOFF td(ON) td(OFF) tr RL VDS tf 90% 90% + VGS - VDD 10% 10% 0 DUT 90% RGS VGS VGS 0 FIGURE 18. SWITCHING TIME TEST CIRCUIT 10% 50% 50% PULSE WIDTH FIGURE 19. RESISTIVE SWITCHING WAVEFORMS www.onsemi.com 6 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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