Dual Bias Resistor
Transistor
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias Resistor
Network
IMD10AMT1G
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• High Current: IC = 500 mA max
• NSV Prefix for Automotive and Other Applications Requiring
•
(3)
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
(2)
R1
Symbol
Value
Unit
V(BR)CBO
50
Vdc
Collector−Emitter Voltage
V(BR)CEO
50
Vdc
Emitter−Base Voltage
V(BR)EBO
5.0
Vdc
IC
500
mAdc
Symbol
Max
Unit
Power Dissipation*
PD
285
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Rating
Collector Current − Continuous
Q1
Q2
MAXIMUM RATINGS (TA = 25°C)
Collector−Base Voltage
(1)
R2
R1
(4)
(5)
SC−74
MARKING
DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*Total for both Transistors.
(6)
6
1
SC−74R
318AA
Style 21
D10M
G
D10 = Specific Device Code
M = Date Code
G
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
IMD10AMT1G
SC−74R
(Pb−Free)
3000 / Tape &
Reel
NSVIMD10AMT1G
SC−74R
(Pb−Free)
3000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
July, 2021 − Rev. 3
Publication Order Number:
IMD10AMT1G/D
IMD10AMT1G
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1(PNP) omitted)
Symbol
Min
Max
Unit
Collector−Base Breakdown Voltage
(IC = 50 mAdc, IE = 0 A)
V(BR)CBO
50
−
Vdc
Collector−Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0 A)
V(BR)CEO
50
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 50 mAdc, IC = 0 A)
V(BR)EBO
5.0
−
Vdc
Collector−Base Cutoff Current
(VCB = 50 Vdc, IE = 0 A)
ICBO
−
100
nA
Emitter−Base Cutoff Current Q1 (PNP)
(VEB = 6.0 Vdc, IC = 0 A)
Q2 (NPN)
IEBO
−
−
1.0
0.5
mA
Collector−Emitter Cutoff Current
(VCE = 25 Vdc, IB = 0 A)
ICES
−
100
nA
68
100
−
600
VCE(sat)
−
0.3
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
−
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
VOH
4.9
−
Vdc
70
7.0
130
13
W
kW
0.008
−
0.012
−
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
hFE
DC Current Gain
(VCE = 5.0 V, IC = 100 mA) Q1(PNP)
(VCE = 5.0 V, IC = 1.0 mA) Q2(NPN)
Collector−Emitter Saturation Voltage
(IC = 10 mA, IB = 1.0 mA)
Input Resistor
Q1(PNP)
Q2(NPN)
R1
Resistor Ratio
Q1(PNP)
Q2(NPN)
R1/R2
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle < 2.0%.
www.onsemi.com
2
IMD10AMT1G
TYPICAL CHARACTERISTICS (NPN)
1000
IC/IB = 10
VCE, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
10
VCE = 5 V
25°C
75°C
−25°C
100
10
1
10
75°C
−25°C
1
Figure 1. DC Current Gain
Figure 2. Collector−Emitter Saturation Voltage
100
Vin, INPUT VOLTAGE (V)
75°C
10
25°C
1
−25°C
0.1
0.01
0
100
IC, COLLECTOR CURRENT (mA)
VO = 0.2 V
VO = 5 V
100
10
IC, COLLECTOR CURRENT (mA)
1
2
3
10
25°C
1
75°C
0.1
4
−25°C
1
10
Vin, INPUT VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
Figure 3. Output Current vs. Input Voltage
Figure 4. Input Voltage vs. Output Current
4
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
25°C
0.1
0.01
100
1000
0.001
1
3
2
1
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (V)
Figure 5. Output Capacitance
www.onsemi.com
3
50
100
IMD10AMT1G
TYPICAL CHARACTERISTICS (PNP)
1
1000
IC/IB = 10
VCE, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
VCE = 5 V
100
75°C
25°C
−25°C
10
1
10
100
75°C
1000
−25°C
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 6. DC Current Gain
Figure 7. Collector−Emitter Saturation Voltage
10
75°C
Vin, INPUT VOLTAGE (V)
100
VO = 0.2 V
VO = 5 V
25°C
−25°C
10
1
0.1
0.01
0
1
2
3
−25°C
75°C
0.1
4
25°C
1
1
10
100
1000
Vin, INPUT VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
Figure 8. Output Current vs. Input Voltage
Figure 9. Input Voltage vs. Output Current
25
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
25°C
0.01
1000
0.001
0.1
20
15
10
5
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (V)
Figure 10. Output Capacitance
www.onsemi.com
4
50
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−74R
CASE 318AA−01
ISSUE B
6
1
DATE 27 MAY 2005
SCALE 2:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
D
HE
4
5
3
2
6
E
1
b
e
c
A
0.05 (0.002)
L
A1
q
DIM
A
A1
b
c
D
E
e
L
HE
q
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.37
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
INCHES
NOM
0.039
0.002
0.015
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT*
2.4
0.094
XXXM
0.95
0.037
1.9
0.074
0.95
0.037
0.7
0.028
1.0
0.039
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
SCALE 10:1
XXX
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 20:
PIN 1. COLLECTOR 1
2. BASE 2
3. EMITTER 2
4. COLLECTOR 2
5. BASE 1
6. EMITTER 1
DOCUMENT NUMBER:
DESCRIPTION:
STYLE 21:
PIN 1. COLLECTOR 1
2. EMITTER 2
3. BASE 2
4. COLLECTOR 2
5. EMITTER 1
6. BASE 1
98AON13505D
SC−74R
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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