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IRFP150A
Advanced Power MOSFET
FEATURES
BVDSS = 100 V
Avalanche Rugged Technology
RDS(on) = 0.04 Ω
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 43 A
Improved Gate Charge
Extended Safe Operating Area
TO-3P
Ο
175 C Operating Temperature
Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
Lower RDS(ON) : 0.032 Ω (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
VDSS
Characteristic
Drain-to-Source Voltage
43
30.4
Ο
1
O
Drain Current-Pulsed
VGS
Gate-to-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
O
1
O
1
O
O3
2
A
170
A
+
_ 20
V
740
mJ
43
A
19.3
mJ
6.5
V/ns
Total Power Dissipation (TC=25 C )
193
W
Linear Derating Factor
1.28
W/ C
Ο
TJ , TSTG
V
Continuous Drain Current (TC=100 C)
IDM
PD
Units
100
Continuous Drain Current (TC=25 C)
Ο
ID
Value
Operating Junction and
Ο
- 55 to +175
Storage Temperature Range
Ο
TL
Maximum Lead Temp. for Soldering
C
300
Purposes, 1/8” from case for 5-seconds
Thermal Resistance
Symbol
Characteristic
Typ.
Max.
R θJC
Junction-to-Case
--
0.78
R θCS
Case-to-Sink
0.24
--
R θ JA
Junction-to-Ambient
--
40
Units
Ο
C /W
Rev. B
©1999 Fairchild Semiconductor Corporation
N-CHANNEL
POWER MOSFET
IRFP150A
Electrical Characteristics (TC=25 C unless otherwise specified)
Ο
Symbol
Characteristic
BVDSS
Drain-Source Breakdown Voltage
∆ BV/ ∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
Min. Typ. Max. Units
100
--
--
V
Ο
0.11
--
V/ C
2.0
--
4.0
V
Gate-Source Leakage , Forward
--
--
100
Gate-Source Leakage , Reverse
--
--
-100
--
--
10
--
--
100
--
--
0.04
Ω
VGS=10V,ID=21.5A
4
O
--
Ω
VDS=40V,ID=21.5A
4
O
Gate Threshold Voltage
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
--
28.34
Ciss
Input Capacitance
--
1750 2270
Coss
Output Capacitance
--
420
485
Crss
Reverse Transfer Capacitance
--
185
215
td(on)
Turn-On Delay Time
--
17
50
Rise Time
--
20
50
Turn-Off Delay Time
--
80
160
Fall Time
--
45
100
Qg
Total Gate Charge
--
75
97
Qgs
Gate-Source Charge
--
13.2
--
Qgd
Gate-Drain(“Miller”) Charge
--
34.8
--
td(off)
tf
VGS=0V,ID=250 µA
ID=250µ A
See Fig 7
--
Breakdown Voltage Temp. Coeff.
gfs
tr
Test Condition
nA
µA
pF
VDS=5V,ID=250 µA
VGS=20V
VGS=-20V
VDS=100V
Ο
VDS=80V,TC=150 C
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=50V,ID=40A,
ns
RG=6.2 Ω
See Fig 13
4 O
5
O
VDS=80V,VGS=10V,
nC
ID=40A
See Fig 6 & Fig 12
4 O
5
O
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
IS
Continuous Source Current
--
--
43
ISM
Pulsed-Source Current
1
O
--
--
170
VSD
Diode Forward Voltage
4
O
--
--
1.6
V
TJ=25 C ,IS=43A,VGS=0V
trr
Reverse Recovery Time
--
135
--
TJ=25 C ,IF=40A
Qrr
Reverse Recovery Charge
--
0.65
--
ns
µC
A
Notes ;
Temperature
1
O Repetitive Rating : Pulse Width Limited by Maximum Junction
o
2
L=0.6mH, I AS=43A, V DD=25V, R G=27Ω , Starting T J =25 C
O
O3 ISD
