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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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IRL640A
N-Channel Logic Level A-FET
200 V, 18 A, 180 mΩ
Description
Features
These N-Channel enhancement mode power field
effect transistors are produced using Fairchild’s
proprietary, planar, DMOS technology. This advanced
technology has been especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices
are well suited for high efficiency switching DC/DC
converters, switch mode power supplies, DC-AC
converters for uninterrupted power supply and motor
control.
•
•
•
•
•
•
•
18 A, 200 V, RDS(on) = 180 mΩ @ VGS = 5 V
Low Gate Charge (Typ. 40 nC)
Low Crss (Typ. 95 pF)
Fast Switching
100% Avalanche Tested
Improved dv/dt Capability
Logic-Level Gate Drive
D
G
G
D
S
TO-220
S
Absolute Maximum Ratings
Symbol
VDSS
ID
Characteristic
Value
Units
Drain-to-Source Voltage
200
V
Continuous Drain Current (TC=25°C)
18
Continuous Drain Current (TC=100°C)
11.4
A
IDM
Drain Current-Pulsed
VGS
Gate-to-Source Voltage
EAS
Single Pulsed Avalanche Energy
(2)
IAR
Avalanche Current
(1)
EAR
Repetitive Avalanche Energy
(1)
11
mJ
dv/dt
Peak Diode Recovery dv/dt
(3)
5
V/ns
Total Power Dissipation (TC=25°C)
110
W
Linear Derating Factor
0.88
W/°C
PD
TJ , TSTG
TL
(1)
Operating Junction and
A
±20
V
64
mJ
18
A
- 55 to +150
Storage Temperature Range
°C
Maximum Lead Temp. for Soldering
Purposes, 1/8
63
300
from case for 5-seconds
Thermal Resistance
Symbol
Characteristic
Typ.
Max.
RθJC
Junction-to-Case
--
1.14
RθCS
Case-to-Sink
0.5
--
RθJA
Junction-to-Ambient
--
62.5
©1999 Fairchild Semiconductor Corporation
IRL640A Rev. C0
1
Units
°C/W
www.fairchildsemi.com
IRL640A — N-Channel Logic Level A-FET
December 2013
Part Number
IRL640A
Top Mark
IRL640A
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics (TC=25℃ unless otherwise specified)
Symbol
Characteristic
BVDSS
Drain-Source Breakdown Voltage
200
--
--
∆BV/∆TJ
Breakdown Voltage Temp. Coeff.
--
0.17
--
IGSS
IDSS
RDS(on)
Gate Threshold Voltage
V
See Fig 7
VDS=5V,ID=250µA
--
2.0
--
--
100
Gate-Source Leakage , Reverse
--
--
-100
--
--
10
--
--
100
--
--
0.18
Ω
VGS=5V,ID=9A
(4)
--
VDS=40V,ID=9A
(4)
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
--
13.3
Ciss
Input Capacitance
--
1310 1705
Coss
Output Capacitance
--
200
250
Crss
Reverse Transfer Capacitance
--
95
120
td(on)
Turn-On Delay Time
--
11
30
Rise Time
--
8
25
Turn-Off Delay Time
--
46
100
Fall Time
--
15
40
Qg
Total Gate Charge
--
40
56
Qgs
Gate-Source Charge
--
6.8
--
Qgd
Gate-Drain ( Miller ) Charge
--
18.6
--
tf
V/°C ID=250µA
1.0
Forward Transconductance
td(off)
VGS=0V,ID=250µA
Gate-Source Leakage , Forward
gfs
tr
V
Test Condition
Ω
VGS(th)
Min. Typ. Max. Units
nA
µA
pF
VGS=20V
VGS=-20V
VDS=200V
VDS=160V,TC=125°C
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=100V,ID=18A,
ns
RG=4.6Ω
See Fig 13
(4) (5)
VDS=160V,VGS=5V,
nC
ID=18A
See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
IS
Continuous Source Current
--
--
18
ISM
Pulsed-Source Current
(1)
--
--
63
VSD
Diode Forward Voltage
(4)
--
--
1.5
V
trr
Reverse Recovery Time
--
224
--
ns
TJ=25°C,IF=18A
Qrr
Reverse Recovery Charge
--
1.55
--
µC
diF/dt=100A/µs
A
Integral reverse pn-diode
in the MOSFET
TJ=25°C,IS=18A,VGS=0V
(4)
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=0.3mH, IAS=18A, VDD=50V, RG=27Ω, Starting TJ =25°C
(3) ISD ≤ 18A, di/dt ≤ 260A/µs, VDD ≤ BV DSS , Starting TJ =25°C
(4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%
(5) Essentially Independent of Operating Temperature
©1999 Fairchild Semiconductor Corporation
IRL640A Rev. C0
2
www.fairchildsemi.com
IRL640A — N-Channel Logic Level A-FET
Package Marking and Ordering Information
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
V
GS
Top :
.0 V
6.0 V
5.0 V
4.5 V
4.0 V
101
3.5 V
Bottom : 3.0 V
@ Notes :
1. 25 µs Pulse Test
2. C = 25 oC
100
10-1
100
101
150 oC
100
25 oC
@ Notes :
1. GS = 0 V
2. DS = 40 V
3. 25 µs Pulse Test
- 55 oC
10-1
101
0
2
6
4
8
10
VDS , Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
0.3
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance
0.4
RDS(on) , [ Ω ]
ID , Drain Current [A]
ID , Drain Current [A]
5.5 V
V =5V
GS
0.2
0.1
VGS = 10 V
@ Note : TJ = 25 oC
101
100
@ Notes :
1. GS = 0 V
2. 25 µs Pulse Test
150 oC
25 oC
-1
0.0
0
20
40
60
10
80
0.4
I , Drain Current [A]
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VSD , Source-Drain Voltage [V]
D
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
2000
C iss
6
VGS , Gate-Source Voltage [V]
Capacitance [pF]
1600
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
1200
800
C oss
400
C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100
10
VDS = 160 V
4
2
@ Notes : ID = 18 A
0
0
1
10
20
30
40
QG , Total Gate Charge [nC]
VDS , Drain-Source Voltage [V]
©1999 Fairchild Semiconductor Corporation
IRL640A Rev. C0
VDS = 40 V
VDS = 100 V
3
www.fairchildsemi.com
IRL640A — N-Channel Logic Level A-FET
!
(continued)
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
2.0
RDS(on) , (Normalized)
Drain-Source On-Resistance
BVDSS , (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
@ Notes :
1. GS = 0 V
2.
0.8
-75
-50
-25
0
25
50
75
100
D
1.5
1.0
@ Notes :
1.VGS = 5 V
2.ID = 9 A
0.5
= 250 µA
125
150
0.0
-75
175
-50
-25
T , Junction Temperature [oC]
Fig 9. Max. Safe Operating Area
50
75
100
125
150
175
Fig 10. Max. Drain Current vs. Case Temperature
20
ID , Drain Current [A]
ID , Drain Current [A]
25
Operation in This Area
is Limited by R DS(on)
102
100 µs
1 ms
101
10 ms
DC
100
0
TJ , Junction Temperature [oC]
J
@ Notes :
1. = 25 oC
C
2.
J
15
10
5
= 150 oC
3. Si gle Pulse
10-1 0
10
101
0
25
102
50
75
100
125
150
T , Case Temperature [oC]
V , Drain-Source Voltage [V]
c
DS
Thermal Response
Fig 11. Thermal Response
100
D=0.5
10- 1
0.2
@ Notes
s
1. Z J C (t)=1.14 o C/W Max.
0.1
2. Duty Factor, D=t1 /t2
θ
3. TJ M -TC =PD M *Z
θ JC
0.02
0.01
10- 2 - 5
10
t1
t2
single pulse
10- 4
t
©1999 Fairchild Semiconductor Corporation
IRL640A Rev. C0
(t)
PDM
θJC
Z (t) ,
0.05
1
10- 3
10- 2
10- 1
, Square Wave Pulse Duration
4
100
101
[sec]
www.fairchildsemi.com
IRL640A — N-Channel Logic Level A-FET
!
IRL640A — N-Channel Logic Level A-FET
50KΩ
200nF
12V
VGS
Same Type
as DUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
t off
tf
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
ID (t)
VDS (t)
VDD
DUT
tp
Time
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©1999 Fairchild Semiconductor Corporation
IRL640A Rev. C0
5
www.fairchildsemi.com
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©1999 Fairchild Semiconductor Corporation
IRL640A Rev. C0
6
www.fairchildsemi.com
IRL640A — N-Channel Logic Level A-FET
DUT
IRL640A — N-Channel Logic Level A-FET
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003
©1999 Fairchild Semiconductor Corporation
IRL640A Rev. C0
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©1999 Fairchild Semiconductor Corporation
IRL640A Rev. C0
8
www.fairchildsemi.com
IRL640A — N-Channel Logic Level A-FET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Sync-Lock™
F-PFS™
AccuPower™
®
FRFET®
AX-CAP®*
®*
®
SM
BitSiC™
Global Power Resource
PowerTrench
GreenBridge™
PowerXS™
Build it Now™
TinyBoost®
Green FPS™
Programmable Active Droop™
CorePLUS™
TinyBuck®
®
Green FPS™ e-Series™
QFET
CorePOWER™
TinyCalc™
QS™
Gmax™
CROSSVOLT™
TinyLogic®
Quiet Series™
GTO™
CTL™
TINYOPTO™
RapidConfigure™
IntelliMAX™
Current Transfer Logic™
TinyPower™
ISOPLANAR™
DEUXPEED®
™
TinyPWM™
Dual Cool™
Marking Small Speakers Sound Louder
TinyWire™
EcoSPARK®
Saving our world, 1mW/W/kW at a time™
and Better™
TranSiC™
EfficentMax™
SignalWise™
MegaBuck™
TriFault Detect™
ESBC™
SmartMax™
MICROCOUPLER™
TRUECURRENT®*
SMART START™
MicroFET™
®
SerDes™
Solutions for Your Success™
MicroPak™
SPM®
MicroPak2™
Fairchild®
STEALTH™
MillerDrive™
Fairchild Semiconductor®
UHC®
SuperFET®
MotionMax™
FACT Quiet Series™
®
Ultra FRFET™
SuperSOT™-3
mWSaver
FACT®
UniFET™
SuperSOT™-6
OptoHiT™
FAST®
VCX™
SuperSOT™-8
OPTOLOGIC®
FastvCore™
VisualMax™
OPTOPLANAR®
SupreMOS®
FETBench™
VoltagePlus™
SyncFET™
FPS™
XS™
ON Semiconductor and
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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