ISL9R1560PF2
15 A, 600 V, STEALTH Diode
Description
The ISL9R1560PF2 is a STEALTH diode optimized for low loss
performance in high frequency hard switched applications. The
STEALTH family exhibits low reverse recovery current (IRR) and
exceptionally soft recovery under typical operating conditions. This
device is intended for use as a free wheeling or boost diode in power
supplies and other power switching applications. The low IRR and
short ta phase reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions under which the
diode may be operated without the use of additional snubber circuitry.
Consider using the STEALTH diode with an SMPS IGBT to provide
the most efficient and highest power density design at lower cost.
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Features
•
•
•
•
•
TO−220F
2 LEAD
CASE 221AS
Stealth Recovery, trr = 29.4 ns (@ IF = 15 A)
Max. Forward Voltage, VF = 2.2 V (@ TC = 25°C)
600 V Reverse Voltage and High Reliability
Avalanche Energy Rated
These Devices are Pb−Free and are RoHS Compliant
MARKING DIAGRAM
Applications
•
•
•
•
•
R1560
PF2
Hard Switched PFC Boost Diode
UPS Free Wheeling Diode
Motor Drive FWD
SMPS FWD
Snubber Diode
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
VRRM
600
V
Working Peak Reverse Voltage
VRWM
600
V
VR
600
V
Average Rectified Forward Current
(TC = 25°C)
IF(AV)
15
A
Repetitive Peak Surge Current
(20 kHz Square Wave)
IFRM
30
A
Nonrepetitive Peak Surge Current
(Halfwave 1 Phase 60 Hz)
IFSM
200
A
PD
37
W
EAVL
20
mJ
TJ, TSTG
−55 to
175
°C
TL
300
°C
DC Blocking Voltage
Power Dissipation
Avalanche Energy (1 A, 40 mH)
Operating and Storage Temperature
Range
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case
for 10s
R1560PF2 = Specific Device Marking
1. Cathode
2. Anode
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2007
December, 2017 − Rev. 2
1
Publication Order Number:
ISL9R1560PF2/D
ISL9R1560PF2
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Tape Width
Quantity
ISL9R1560PF2
R1560PF2
TO−220F−2L
N/A
50 Units
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VR = 600 V, TC = 25°C
−
−
100
mA
VR = 600 V, TC = 125°C
−
−
1.0
mA
IF = 15 A, TC = 25°C
−
1.8
2.2
V
IF = 15 A, TC = 125°C
−
1.65
2.0
V
IF = 0 A, VR = 10 V
−
62
−
pF
IF = 1 A, dIF/dt = 100 A/ms,
VR = 30 V
−
25
30
ns
IF = 15 A, dIF/dt = 100 A/ms,
VR = 30 V
−
35
40
ns
IF = 15 A,
dIF/dt = 200 A/ms,
VR = 390 V, TC = 25°C
−
29.4
−
ns
−
3.5
−
A
−
57
−
nC
−
90
−
ns
OFF STATE CHARACTERISTICS
IR
Instantaneous Reverse Current
ON STATE CHARACTERISTICS
VF
Instantaneous Forward Voltage
DYNAMIC CHARACTERISTICS
CJ
Junction Capacitance
SWITCHING CHARACTERISTICS
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Irr
Maximum Reverse Recovery Current
Qrr
Reverse Recovered Charge
trr
Reverse Recovery Time
IF = 15 A,
dIF/dt = 200 A/ms,
VR = 390 V, TC = 125°C
S
Softness Factor (tb/ta)
−
2.0
−
Irr
Maximum Reverse Recovery Current
−
5.0
−
A
Qrr
Reverse Recovered Charge
−
275
−
nC
trr
Reverse Recovery Time
−
52
−
ns
S
Softness Factor (tb/ta)
−
1.36
−
Irr
Maximum Reverse Recovery Current
−
13.5
−
A
Qrr
Reverse Recovered Charge
−
390
−
nC
Maximum di/dt during tb
−
800
−
A/ms
−
−
4.1
°C/W
−
−
70
°C/W
dIM/dt
IF = 15 A,
dIF/dt = 800 A/ms,
VR = 390 V, TC = 125°C
THERMAL CHARACTERISTICS
RqJC
Thermal Resistance Junction to Case
RqJA
Thermal Resistance Junction to Ambient
TO−247
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
ISL9R1560PF2
TYPICAL PERFORMANCE CHARACTERISTICS
4000
30
175oC
1000
IR, REVERSE CURRENT (mA)
IF, FORWARD CURRENT (A)
25
175oC
150oC
20
25oC
125oC
15
100oC
10
150oC
125oC
100
100oC
75oC
10
1
5
25oC
0
0.5
0.1
0.75
1.0
1.25
1.5
1.75
2.0
100
2.25
500
600
Figure 2. Reverse Current vs. Reverse Voltage
100
100
VR = 390V, TJ = 1255C
80
V R = 390V, TJ = 1255C
t b AT I F = 30A, 15A, 7.5A
80
t b AT dI F/dt = 200A/ms, 500A/ms, 800A/ms
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
400
VR , REVERSE VOLTAGE (V)
Figure 1. Forward Current vs. Forward Voltage
60
40
60
40
20
20
t a AT dIF/dt = 200A/ms, 500A/ms, 800A/ms
t a AT I F = 30A, 15A, 7.5A
0
0
5
10
15
20
25
0
200
30
400
IF, FORWARD CURRENT (A)
600
800
1000
1200
1400
1600
dI F /dt, CURRENT RATE OF CHANGE (A/ms)
Figure 3. ta and tb Curves vs. Forward Current
Figure 4. ta and tb Curves vs. dIF/dt
25
16
IRR, MAX REVERSE RECOVERY CURRENT (A)
IRR, MAX REVERSE RECOVERY CURRENT (A)
300
200
VF, FORWARD VOLTAGE (V)
dIF/dt = 800A/ms
VR = 390V, TJ = 1255C
14
12
dI F/dt = 500A/ms
10
8
dIF/dt = 200A/ms
6
4
2
0
5
10
15
20
25
VR = 390V, TJ = 1255C
IF = 30A
20
I F = 15A
15
I F = 7.5A
10
5
0
200
30
IF, FORWARD CURRENT (A)
400
600
800
1000
1200
1400
1600
dI F /dt, CURRENT RATE OF CHANGE (A/ms)
Figure 6. Maximum Reverse Recovery Current vs. dIF/dt
Figure 5. Maximum Reverse Recovery Current vs.
Forward Current
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ISL9R1560PF2
TYPICAL PERFORMANCE CHARACTERISTICS
700
QRR, REVERSE RECOVERED CHARGE (nC)
S, REVERSE RECOVERY SOFTNESS FACTOR
2.5
V R = 390V, TJ = 1255C
I F = 30A
2.0
IF = 15A
1.5
IF = 7.5A
1.0
0.5
200
400
600
800
1000
1200
1400
VR = 390V, TJ = 1255C
I F = 30A
600
500
I F = 15A
400
I F = 7.5A
300
200
1600
200
dIF /dt, CURRENT RATE OF CHANGE (A/ms)
600
800
1000
1200
1400
1600
dI F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 7. Reverse Recovery Softness Factor vs. dIF/dt
Figure 8. Reverse Recovered Charge vs. dIF/dt
IF(AV), AVERAGE FORWARD CURRENT (A)
1200
CJ , JUNCTION CAPACITANCE (pF)
400
1000
800
600
400
200
0
0.1
1
10
100
TC, CASE TEMPERATURE (oC)
VR , REVERSE VOLTAGE (V)
Figure 9. Junction Capacitance vs. Reverse Voltage
Figure 10. DC Current Derating Curve
2.0
Z θJA, NORMALIZED
THERMAL IMPEDANCE
1.0
0.1
DUTY CYCLE − DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
SINGLE PULSE
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10−5
10−4
10−3
10−2
10−1
100
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Normalized Maximum Transient Thermal Impedance
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101
ISL9R1560PF2
TEST CIRCUIT AND WAVEFORMS
VGE AMPLITUDE AND
RG CONTROL dI F/dt
t1 AND t2 CONTROL I F
L
IF
DUT
RG
CURRENT
SENSE
dIF
trr
dt
ta
tb
0
+
0.25 I RM
VDD
VGE
−
MOSFET
t1
I RM
t2
Figure 12. Test Circuit
Figure 13. trr Waveforms and Definitions
I = 1A
L = 40mH
R < 0.1W
V DD = 50V
EAVL = 1/2LI 2[V R(AVL)/(VR(AVL) − V DD )]
Q1 = IGBT (BV CES > DUT V R(AVL))
VAVL
LR
CURRENT
SENSE
+
VDD
IL
Q1
VDD
DUT
IL
IV
−
t0
Figure 14. Avalanche Energy Test Circuit
t1
t2
t
Figure 15. Avalanche Current and Voltage
Waveforms
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5
ISL9R1560PF2
PACKAGE DIMENSIONS
TO−220 Fullpack, 2−Lead / TO−220F−2FS
CASE 221AS
ISSUE O
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6
ISL9R1560PF2
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ISL9R1560PF2/D