ISL9R1560S3ST

15 A, 600 V, STEALTHTM Diode Features Description • Stealth Recovery trr = 29.4 ns (@ IF = 15 A) • Max Forward Voltage, VF = 2.2 V (@ TC = 25°C) • 600 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant Applications • SMPS • Hard Switched PFC Boost Diode • UPS Free Wheeling Diode • Motor Drive FWD • SMPS FWD The ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (Irr) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low Irr and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. • Snubber Diode Package Symbol JEDEC TO-220AC-2L JEDEC STYLE TO-247-2L ANODE K CATHODE CATHODE (BOTTOM SIDE METAL) CATHODE (FLANGE) ANODE CATHODE A JEDEC STYLE TO-262(I2-PAK) JEDEC TO-263AB(D2-PAK) ANODE CATHODE CATHODE (FLANGE) CATHODE (FLANGE) N/C ANODE Device Maximum Ratings TC = 25°C unless otherwise noted Symbol VRRM Ratings 600 Unit V Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current (TC = 145oC) 15 A IFRM Repetitive Peak Surge Current (20kHz Square Wave) 30 A IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 200 A VRWM VR Parameter Repetitive Peak Reverse Voltage ©2001 Seconductor Components Industries, LLC. October-2017, Rev. 3 1 Publication Order Number: ISL9R1560S3S/D ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S — STEALTH™ Diode ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Parameter Power Dissipation EAVL Avalanche Energy (1 A, 40 mH) TJ, TSTG Operating and Storage Temperature Range TL Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 TPKG Ratings 150 Unit W 20 mJ -55 to 175 °C 300 260 °C °C CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Package Marking and Ordering Information Part Number Top Mark Tape Width Quantity ISL9R1560G2 ISL9R1560G2 TO-247-2L Tube N/A N/A 30 ISL9R1560P2 ISL9R1560P2 TO-220AC-2L Tube N/A N/A 50 ISL9R1560S2 ISL9R1560S2 TO-262(I2-PAK) Tube N/A N/A 50 ISL9R1560S3ST ISL9R1560S3S TO-263(D2-PAK) Reel 13" dia 24mm 800 Package Packing Method Reel Size Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit Off State Characteristics IR Instantaneous Reverse Current VR = 600 V TC = 25°C - - 100 µA TC = 125°C - - 1.0 mA On State Characteristics VF Instantaneous Forward Voltage IF = 15 A TC = 25°C - 1.8 2.2 V TC = 125°C - 1.65 2.0 V - 62 - pF Dynamic Characteristics CJ Junction Capacitance VR = 10 V, IF = 0 A Switching Characteristics trr Reverse Recovery Time trr Irr Reverse Recovery Current Qrr Reverse Recovered Charge Reverse Recovery Time trr Reverse Recovery Time S Irr Softness Factor (tb/ta) Qrr Reverse Recovered Charge trr Reverse Recovery Time S Irr Softness Factor (tb/ta) Reverse Recovery Current Qrr Reverse Recovered Charge diM/dt Reverse Recovery Current IF = 1 A, diF/dt = 100 A/µs, VR = 30 V - 25 30 ns IF=15 A, diF/dt = 100 A/µs, VR = 30 V IF = 15 A, diF/dt = 200 A/µs, VR = 390 V, TC = 25°C - 35 40 ns - 29.4 - ns - 3.5 - A - 57 - nC - 90 - ns - 2.0 - - 5.0 - A - 275 - nC ns IF = 15 A, diF/dt = 200 A/µs, VR = 390 V, TC = 125°C IF = 15 A, diF/dt = 800 A/µs, VR = 390 V, TC = 125°C Maximum di/dt during tb - 52 - - 1.36 - - 13.5 - A - 390 - nC - 800 - A/µs Thermal Characteristics RθJC Thermal Resistance Junction to Case - - 1.0 °C/W RθJA Thermal Resistance Junction to Ambient TO-247 - - 30 °C/W RθJA Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W RθJA Thermal Resistance Junction to Ambient TO-262 - - 62 °C/W RθJA Thermal Resistance Junction to Ambient TO-263 - - 62 °C/W www.onsemi.com 2 ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S — STEALTH™ Diode Symbol PD 4000 30 175oC 1000 IR, REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 25 175oC 150oC 20 25oC 125oC 15 100oC 10 150oC 125oC 100 100oC 75oC 10 1 5 25oC 0 0.5 0.75 1.0 1.25 1.5 1.75 2.0 0.1 100 2.25 200 VF, FORWARD VOLTAGE (V) Figure 1. Forward Current vs Forward Voltage 500 600 100 VR = 390V, TJ = 125°C 80 VR = 390V, TJ = 125°C tb AT IF = 30A, 15A, 7.5A 80 tb AT diF/dt = 200A/µs, 500A/µs, 800A/µs t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 400 Figure 2. Reverse Current vs Reverse Voltage 100 60 40 20 60 40 20 ta AT diF/dt = 200A/µs, 500A/µs, 800A/µs ta AT IF = 30A, 15A, 7.5A 0 0 5 10 15 20 25 0 200 30 IF, FORWARD CURRENT (A) 400 600 800 1000 1200 1400 diF/dt, CURRENT RATE OF CHANGE (A/µs) 1600 Figure 4. ta and tb Curves vs diF/dt Figure 3. ta and tb Curves vs Forward Current 25 16 diF/dt = 800A/µs VR = 390V, TJ = 125°C Irr, MAX REVERSE RECOVERY CURRENT (A) Irr, MAX REVERSE RECOVERY CURRENT (A) 300 VR , REVERSE VOLTAGE (V) 14 12 diF/dt = 500A/µs 10 8 diF/dt = 200A/µs 6 4 2 0 5 10 15 20 25 VR = 390V, TJ = 125°C IF = 30A 20 IF = 15A 15 IF = 7.5A 10 5 0 200 30 IF, FORWARD CURRENT (A) 400 600 800 1000 1200 1400 1600 diF/dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Maximum Reverse Recovery Current vs Forward Current Figure 6. Maximum Reverse Recovery Current vs diF/dt www.onsemi.com 3 ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S — STEALTH™ Diode Typical Performance Curves QRR, REVERSE RECOVERED CHARGE (nC) S, REVERSE RECOVERY SOFTNESS FACTOR 700 2.5 VR = 390V, TJ = 125°C IF = 30A 2.0 IF = 15A 1.5 IF = 7.5A 1.0 0.5 200 400 600 800 1000 1200 1400 VR = 390V, TJ = 125°C IF = 30A 600 500 IF = 15A 400 IF = 7.5A 300 200 200 1600 1200 800 1000 1200 1400 1600 IF(AV), AVERAGE FORWARD CURRENT (A) 16 1000 800 600 400 200 0 0.1 1 10 14 12 10 8 6 4 2 0 140 150 155 160 165 170 175 TC, CASE TEMPERATURE (oC) Figure 9. Junction Capacitance vs Reverse Voltage 1.0 145 100 VR , REVERSE VOLTAGE (V) THERMAL IMPEDANCE CJ , JUNCTION CAPACITANCE (pF) 600 Figure 7. Reverse Recovered Charge vs diF/dt Figure 7. Reverse Recovery Softness Factor vs diF/dt ZθJA, NORMALIZED 400 diF/dt, CURRENT RATE OF CHANGE (A/µs) diF/dt, CURRENT RATE OF CHANGE (A/µs) Figure 10. DC Current Derating Curve DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 SINGLE PULSE PEAK TJ = PDM x ZθJA x RθJA + TA 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) Figure 11. Normalized Maximum Transient Thermal Impedance www.onsemi.com 4 100 101 ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S — STEALTH™ Diode Typical Performance Curves (Continued) VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG CURRENT SENSE diF trr dt ta tb 0 + VGE - MOSFET t1 0.25 IRM VDD IRM t2 Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1Ω VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE VAVL R + VDD Q1 VDD DUT IL IL I V t0 Figure 14. Avalanche Energy Test Circuit t1 t2 t Figure 15. Avalanche Current and Voltage Waveforms www.onsemi.com 5 ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S — STEALTH™ Diode Test Circuit and Waveforms Typical Performance Curves (Continued) Figure 16. TO-247 2L - TO247,MOLDED,2LD, JEDEC OPTION AB Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 6 ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S — STEALTH™ Diode Mechanical Dimensions ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S — STEALTH™ Diode Mechanical Dimensions Figure 17. TO-220 2L - 2LD,TO220,JEDEC TO-220 VARIATION AC Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 7 ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S — STEALTH™ Diode Mechanical Dimensions Figure 18. TO-220F 2L - 2LD; TO220; MOLDED; FULL PACK Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 8 ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S — STEALTH™ Diode Mechanical Dimensions Figure 19. TO-263 2L (D2PAK) - 2LD,TO263, SURFACE MOUNT Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 9 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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