STEALTHERectifier
30 A, 600 V
ISL9R3060G2-F085
Description
The ISL9R3060G2−F085 is STEALTH diode optimized for low
loss performance in high frequency hard switched applications. The
STEALTH family exhibits low reverse recovery current (IRRM) and
exceptionally soft recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost diode in
power supplies and other power switching applications. The low IRRM
and short ta phase reduce loss in switching transistors. The soft
recovery minimizes ringing, expanding the range of conditions under
which the diode may be operated without the use of additional snubber
circuitry. Consider using the STEALTH diode with an SMPS IGBT to
provide the most efficient and highest power density design at lower
cost.
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1
2
1. Cathode 2. Anode
Features
•
•
•
•
•
High Speed Switching (trr = 31 ns(Typ.) @ IF = 30 A)
Low Forward Voltage (VF = 2.4 V(Max.) @ IF = 30 A)
Avalanche Energy Rated
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
TO−247−2LD
CASE 340CL
MARKING DIAGRAM
Applications
•
•
•
•
Automotive DCDC converter
Automotive On Board Charger
Switching Power Supply
Power Switching Circuits
$Y&Z&3&K
R3060G2
$Y
&Z
&3
&K
R3060G2
= ON Semiconductor Logo
= Assembly Plant Code
= Date Code (Year & Week)
= Lot Traceability Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2013
March, 2020 − Rev. 7
1
Publication Order Number:
ISL9R3060G2−F085/D
ISL9R3060G2−F085
ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise noted
Parameter
Symbol
Ratings
Units
VRRM
Peak Repetitive Reverse Voltage
600
V
VRWM
Working Peak Reverse Voltage
600
V
DC Blocking Voltage
600
V
VR
IF(AV)
Average Rectified Forward Current
@ TC = 125_C
30
A
IFSM
Non−repetitive Peak Surge Current (Halfwave 1 Phase 60 Hz)
325
A
EAVL
Avalanche Energy (1 A, 40 mH)
20
mJ
−55 to +175
_C
Max
Units
0.58
°C/W
45
°C/W
TJ, TSTG
Operating Junction and Storage Temperature
THERMAL CHARACTERISTICS TC = 25°C unless otherwise noted
Parameter
Symbol
RθJC
Maximum Thermal Resistance, Junction to Case
RθJA
Maximum Thermal Resistance, Junction to Ambient
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Tube
Quantity
R3060G2
ISL9R3060G2−F085
TO−247
−
30
ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise noted
Symbol
IR
VFM1
trr2
ta
tb
Qrr
EAVL
Conditions
Parameter
Instantaneous Reverse Current
Instantaneous Forward Voltage
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Avalanche Energy
VR = 600 V
Min.
Typ.
Max
Units
TC = 25°C
−
−
100
mA
TC = 175°C
−
−
2
mA
TC = 25°C
−
2.0
2.4
V
TC = 175°C
−
1.5
2.2
V
IF = 1 A, di/dt = 200 A/ms,
VCC = 390 V
TC = 25°C
−
23
35
ns
IF = 30 A, di/dt = 200 A/ms,
VCC = 390 V
TC = 25°C
TC = 175°C
−
31
135
45
−
ns
ns
IF = 30 A, di/dt = 200 A/ms,
VCC = 390 V
TC = 25°C
−
−
−
18
13
48
−
−
−
ns
ns
nC
20
−
−
mJ
IF = 30 A
IAV =1.0 A, L = 40 mH
1. Pulse: Test Pulse width = 300 ms, Duty Cycle = 2%.
2. Guaranteed by design.
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2
ISL9R3060G2−F085
TEST CIRCUIT WAVEFORMS
Figure 1. Test Circuit Waveforms
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3
ISL9R3060G2−F085
TYPICAL PERFORMANCE CHARACTERISTICS
1000
400
10
TC = 125°C
1
0.1
TC = 25°C
0.1
1
2
3
4
10
0.1
TC = 25°C
0.01
1E−3
5
TC = 125°C
1
0
100
200
400
500
600
Reverse Voltage, VR [V]
Figure 2. Typical Forward Voltage Drop
vs. Forward Current
Figure 3. Typical Reverse Current vs.
Reverse Voltage
200
Typical Capacitance
at 10 V = 91 pF
Reverse Recovery Time, trr [ns]
IF = 30 A
400
200
0
0.1
1
10
150
TC = 175°C
TC = 125°C
100
50
TC = 25°C
0
100
100
200
300
400
500
di/dt [A/ms]
Reverse Voltage, VR [V]
Figure 4. Typical Junction Capacitance
Figure 5. Typical Reverse Recovery Time
vs. di/dt
40
Average Forward Current, IF(AV) [A]
20
Reverse Recovery Current, Irr [A]
300
Forward Voltage, VF [V]
600
Capacitances , CJ [pF]
TC = 175°C
100
TC = 175°C
Reverse Current , IR [mA]
Forward Current, IF [A]
100
IF = 30 A
15
TC = 175°C
10
TC = 125°C
5
TC = 25°C
0
100
200
300
400
30
20
10
0
500
25
50
75
100
125
150
175
di/dt [A/ms]
Case temperature, TC [°C]
Figure 6. Typical Reverse Recovery
Current vs. di/dt
Figure 7. Forward Current Derating Curve
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4
ISL9R3060G2−F085
Reverse Recovery Charge, Qrr [nC]
1000
IF = 30 A
TC = 175°C
750
TC = 125°C
500
250
TC = 25°C
0
100
200
300
400
500
di/dt [A/ms]
Figure 8. Reverse Recovery Charge
1
ZthJC(t), Thermal Response
D=0.5
0.1
0.2
0.1
0.05
0.02
0.01
PDM
0.01
t1
t2
single pulse
1. ZthJC(t) = 0.58°C/W Typ.
2. Duty Factor, D = t1/t2
3. TJM − TC = PDM × ZthJC(t)
0.001
−5
10
10
−4
−3
10
−2
−1
10
10
0
10
10
1
2
10
t1, Square Wave Pulse Duration [sec]
Figure 9. Transient Thermal Response Curve
STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX
A
Y
WW
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13850G
TO−247−2LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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