Is Now Part of
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ISL9R3060G2, ISL9R3060P2
30 A, 600 V, STEALTHTM Diode
Description
Features
• Stealth Recovery trr = 36ns (@ IF = 30 A)
• Max Forward Voltage, VF = 2.4 V (@ TC = 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• SMPS
• Hard Switched PFC Boost Diode
The ISL9R3060G2, ISL9R3060P2 is a STEALTH™ diode optimized
for low loss performance in high frequency hard switched
applications. The STEALTH™ family exhibits low reverse recovery
current (Irr) and exceptionally soft recovery under typical operating
conditions. This device is intended for use as a free wheeling or
boost diode in power supplies and other power switching
applications. The low Irr and short ta phase reduce loss in switching
transistors. The soft recovery minimizes ringing, expanding the
range of conditions under which the diode may be operated without
the use of additional snubber circuitry. Consider using the
STEALTH™ diode with an SMPS IGBT to provide the most efficient
and highest power density design at lower cost.
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Symbol
Package
CATHODE
(FLANGE)
JEDEC STYLE 2 LEAD TO-247-2L
JEDEC TO-220AC-2L
ANODE
K
CATHODE
CATHODE
(BOTTOM SIDE
METAL)
A
CATHODE
ANODE
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
VRRM
VRWM
Parameter
Peak Repetitive Reverse Voltage
Ratings
600
Unit
V
Working Peak Reverse Voltage
600
V
DC Blocking Voltage
600
V
IF(AV)
Average Rectified Forward Current
30
A
IFRM
Repetitive Peak Surge Current (20kHz Square Wave)
70
A
IFSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
325
A
Power Dissipation
200
W
Avalanche Energy (1A, 40mH)
20
mJ
VR
PD
EAVL
TJ, TSTG
TL
TPKG
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
-55 to 175
°C
300
260
°C
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2001 Fairchild Semiconductor Corporation
ISL9R3060G2, ISL9R3060P2 Rev. C1
1
www.fairchildsemi.com
ISL9R3060G2, ISL9R3060P2 — STEALTH™ Diode
November 2013
Part Number
Top Mark
ISL9R3060G2
ISL9R3060G2
TO-247-2L
Tube
ISL9R3060P2
ISL9R3060P2
TO-220AC-2L
Tube
Package
Packing Method Reel Size
Tape Width
Quantity
N/A
N/A
30
N/A
N/A
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off State Characteristics
IR
Instantaneous Reverse Current
TC = 25°C
-
-
100
µA
TC = 125°C
-
-
1.0
mA
TC = 25°C
-
2.1
2.4
V
TC = 125°C
-
1.7
2.1
V
VR = 10 V, IF = 0 A
-
120
-
pF
IF = 1 A, diF/dt = 100 A/µs, VR = 30 V
-
27
35
ns
IF=30 A, diF/dt = 100 A/µs, VR = 30 V
IF = 30 A,
diF/dt = 200 A/µs,
VR = 390 V, TC = 25°C
-
36
45
ns
-
36
-
ns
VR = 600 V
On State Characteristics
VF
Instantaneous Forward Voltage
IF = 30 A
Dynamic Characteristics
CJ
Junction Capacitance
Switching Characteristics
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Irr
Reverse Recovery Current
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
S
Softness Factor (tb/ta)
Irr
Reverse Recovery Current
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
S
Softness Factor (tb/ta)
Irr
Reverse Recovery Current
Qrr
Reverse Recovery Charge
dIM/dt
IF = 30 A,
diF/dt = 200 A/µs,
VR = 390 V,
TC = 125°C
IF = 30 A,
diF/dt = 1000 A/µs,
VR = 390 V,
TC = 125°C
Maximum di/dt during tb
-
2.9
-
A
-
55
-
nC
-
110
-
ns
-
1.9
-
-
6
-
A
-
450
-
nC
-
60
-
ns
-
1.25
-
-
21
-
A
730
-
nC
800
-
A/µs
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
-
-
0.75
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-247
-
-
30
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-220
-
-
62
°C/W
©2001 Fairchild Semiconductor Corporation
ISL9R3060G2, ISL9R3060P2 Rev. C1
2
www.fairchildsemi.com
ISL9R3060G2, ISL9R3060P2 — STEALTH™ Diode
Package Marking and Ordering Information
60
5000
175oC
o
175 C
1000
25oC
150oC
IR, REVERSE CURRENT (µA)
IF, FORWARD CURRENT (A)
50
40
o
125 C
30
20
100oC
10
0
0
0.5
1.0
1.5
2.0
2.5
150oC
125oC
100
100oC
75oC
10
1
25oC
0.1
100
3.0
200
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Current vs Forward Voltage
100
100
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
600
VR = 390V, TJ = 125°C
70
60
50
40
30
20
tb AT IF = 60A, 30A, 15A
80
60
40
20
10
ta AT diF/dt = 200A/µs, 500A/µs, 800A/µs
0
10
20
30
40
50
ta AT IF = 60A, 30A, 15A
0
200
60
600
800
1200
400
1000
1400
diF/dt, CURRENT RATE OF CHANGE (A/µs)
IF, FORWARD CURRENT (A)
Figure 3. ta and tb Curves vs Forward Current
Irr, MAX REVERSE RECOVERY CURRENT (A)
VR = 390V, TJ = 125°C
diF/dt = 800A/µs
18
16
14
diF/dt = 500A/µs
12
10
8
diF/dt = 200A/µs
6
0
10
20
30
40
50
60
IF, FORWARD CURRENT (A)
30
IF = 60A
VR = 390V, TJ = 125°C
25
IF = 30A
IF = 15A
20
15
10
5
0
200
400
600
800
1000
1200
1400
1600
diF/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Maximum Reverse Recovery Current
vs Forward Current
©2001 Fairchild Semiconductor Corporation
ISL9R3060G2, ISL9R3060P2 Rev. C1
1600
Figure 4. ta and tb Curves vs diF/dt
20
Irr, MAX REVERSE RECOVERY CURRENT (A)
500
120
VR = 390V, TJ = 125°C
80
4
400
Figure 2. Reverse Current vs Reverse Voltage
90 tb AT diF/dt = 200A/µs, 500A/µs, 800A/µs
0
300
VR , REVERSE VOLTAGE (V)
Figure 6. Maximum Reverse Recovery Current
vs diF/dt
3
www.fairchildsemi.com
ISL9R3060G2, ISL9R3060P2 — STEALTH™ Diode
Typical Performance Curves
1200
VR = 390V, TJ = 125°C
IF = 60A
QRR, REVERSE RECOVERY CHARGE (nC)
S, REVERSE RECOVERY SOFTNESS FACTOR
2.5
IF = 30A
2.0
1.5
IF = 15A
1.0
0.5
200
400
600
800
1000
1200
1400
VR = 390V, TJ = 125°C
1000
IF = 30A
800
600
IF = 15A
400
200
200
1600
600
1000
1200
1400
1600
90
Average Forward Current, I F(AV) (A)
1000
800
600
400
200
0
0.1
1
10
75
60
45
30
15
0
100
25
50
VR , REVERSE VOLTAGE (V)
1.0
75
100
125
150
175
Case temperature, T C (o C )
Figure 9. Junction Capacitance vs Reverse Voltage
THERMAL IMPEDANCE
800
Figure 8. Reverse Recovery Charge vs diF/dt
Figure 7. Reverse Recovery Softness Factor
vs diF/dt
CJ , JUNCTION CAPACITANCE (pF)
400
diF/dt, CURRENT RATE OF CHANGE (A/µs)
diF/dt, CURRENT RATE OF CHANGE (A/µs)
ZθJA, NORMALIZED
IF = 60A
Figure 10. Forward Current Derating Curve
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
SINGLE PULSE
0.01
10-5
10-4
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
101
Figure 11. Normalized Maximum Transient Thermal Impedance
©2001 Fairchild Semiconductor Corporation
ISL9R3060G2, ISL9R3060P2 Rev. C1
4
www.fairchildsemi.com
ISL9R3060G2, ISL9R3060P2 — STEALTH™ Diode
Typical Performance Curves (Continued)
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 CONTROL IF
L
IF
DUT
RG
CURRENT
SENSE
diF
trr
dt
ta
tb
0
+
0.25 IRM
VDD
VGE
-
MOSFET
t1
IRM
t2
Figure 12. trr Test Circuit
Figure 13. trr Waveforms and Definitions
I = 1A
L = 40mH
R < 0.1Ω
VDD = 50V
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
L
CURRENT
SENSE
VAVL
R
+
VDD
IL
Q1
VDD
DUT
t0
Figure 14. Avalanche Energy Test Circuit
©2001 Fairchild Semiconductor Corporation
ISL9R3060G2, ISL9R3060P2 Rev. C1
IL
I V
t1
t2
t
Figure 15. Avalanche Current and
Voltage Waveforms
5
www.fairchildsemi.com
ISL9R3060G2, ISL9R3060P2 — STEALTH™ Diode
Test Circuit and Waveforms
ISL9R3060G2, ISL9R3060P2 — STEALTH™ Diode
Mechanical Dimensions
Figure 16. TO-247 2L - TO247,MOLDED,2LD, JEDEC OPTION AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-002
©2001 Fairchild Semiconductor Corporation
ISL9R3060G2, ISL9R3060P2 Rev. C1
6
www.fairchildsemi.com
ISL9R3060G2, ISL9R3060P2 — STEALTH™ Diode
Mechanical Dimensions
Figure 17. TO-220 2L - 2LD,TO220,JEDEC TO-220 VARIATION AC
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-0B2
©2001 Fairchild Semiconductor Corporation
ISL9R3060G2, ISL9R3060P2 Rev. C1
7
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2001 Fairchild Semiconductor Corporation
ISL9R3060G2, ISL9R3060P2 Rev. C1
8
www.fairchildsemi.com
ISL9R3060G2, ISL9R3060P2 — STEALTH™ Diode
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Sync-Lock™
F-PFS™
AccuPower™
®
FRFET®
AX-CAP®*
®*
®
BitSiC™
Global Power ResourceSM
PowerTrench
GreenBridge™
PowerXS™
Build it Now™
TinyBoost®
Green FPS™
Programmable Active Droop™
CorePLUS™
TinyBuck®
®
Green FPS™ e-Series™
QFET
CorePOWER™
TinyCalc™
QS™
Gmax™
CROSSVOLT™
TinyLogic®
Quiet Series™
GTO™
CTL™
TINYOPTO™
RapidConfigure™
IntelliMAX™
Current Transfer Logic™
TinyPower™
ISOPLANAR™
DEUXPEED®
™
TinyPWM™
Dual Cool™
Marking Small Speakers Sound Louder
TinyWire™
EcoSPARK®
Saving our world, 1mW/W/kW at a time™
and Better™
TranSiC™
EfficentMax™
SignalWise™
MegaBuck™
TriFault Detect™
ESBC™
SmartMax™
MICROCOUPLER™
TRUECURRENT®*
SMART
START™
MicroFET™
®
SerDes™
Solutions for Your Success™
MicroPak™
SPM®
MicroPak2™
Fairchild®
®
STEALTH™
MillerDrive™
Fairchild Semiconductor
UHC®
SuperFET®
MotionMax™
FACT Quiet Series™
®
Ultra FRFET™
®
SuperSOT™-3
mWSaver
FACT
UniFET™
SuperSOT™-6
OptoHiT™
FAST®
®
VCX™
SuperSOT™-8
OPTOLOGIC
FastvCore™
®
®
VisualMax™
OPTOPLANAR
SupreMOS
FETBench™
VoltagePlus™
SyncFET™
FPS™
XS™
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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