ISL9R3060G2, ISL9R3060P2
30 A, 600 V, STEALTHTM Diode
Description
Features
• Stealth Recovery trr = 36ns (@ IF = 30 A)
• Max Forward Voltage, VF = 2.4 V (@ TC = 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• SMPS
• Hard Switched PFC Boost Diode
The ISL9R3060G2, ISL9R3060P2 is a STEALTH™ diode optimized
for low loss performance in high frequency hard switched
applications. The STEALTH™ family exhibits low reverse recovery
current (Irr) and exceptionally soft recovery under typical operating
conditions. This device is intended for use as a free wheeling or
boost diode in power supplies and other power switching
applications. The low Irr and short ta phase reduce loss in switching
transistors. The soft recovery minimizes ringing, expanding the
range of conditions under which the diode may be operated without
the use of additional snubber circuitry. Consider using the
STEALTH™ diode with an SMPS IGBT to provide the most efficient
and highest power density design at lower cost.
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Symbol
Package
CATHODE
(FLANGE)
JEDEC STYLE 2 LEAD TO-247-2L
JEDEC TO-220AC-2L
ANODE
K
CATHODE
CATHODE
(BOTTOM SIDE
METAL)
A
CATHODE
ANODE
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
VRRM
VRWM
Parameter
Peak Repetitive Reverse Voltage
Ratings
600
Unit
V
Working Peak Reverse Voltage
600
V
DC Blocking Voltage
600
V
IF(AV)
Average Rectified Forward Current
30
A
IFRM
Repetitive Peak Surge Current (20kHz Square Wave)
70
A
IFSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
325
A
Power Dissipation
200
W
Avalanche Energy (1A, 40mH)
20
mJ
VR
PD
EAVL
TJ, TSTG
TL
TPKG
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
-55 to 175
°C
300
260
°C
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
© 2001 Semiconductor Components Industries, LLC
ISL9R3060G2, ISL9R3060P2 Rev. 4
1
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www.onsemi.com
ISL9R3060G2, ISL9R3060P2 — STEALTH™ Diode
September 2017
Part Number
Packing Method Reel Size
Top Mark
Package
ISL9R3060G2
R3060G2
TO-247-2L
Tube
ISL9R3060P2
R3060P2
TO-220AC-2L
Tube
Tape Width
Quantity
N/A
N/A
30
N/A
N/A
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off State Characteristics
IR
Instantaneous Reverse Current
-
-
100
µA
TC = 125°C
-
-
1.0
mA
TC = 25°C
-
2.1
2.4
V
-
1.7
2.1
V
VR = 10 V, IF = 0 A
-
120
-
pF
IF = 1 A, diF/dt = 100 A/µs, VR = 30 V
-
27
35
ns
-
36
45
ns
-
36
-
ns
-
2.9
-
A
-
55
-
nC
-
110
-
ns
-
1.9
-
VR = 600 V
TC = 25°C
On State Characteristics
VF
Instantaneous Forward Voltage
IF = 30 A
TC = 125°C
Dynamic Characteristics
CJ
Junction Capacitance
Switching Characteristics
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Irr
Reverse Recovery Current
trr
Reverse Recovery Time
Irr
Reverse Recovery Current
Qrr
Reverse Recovery Charge
S
Softness Factor (tb/ta)
Qrr
Reverse Recovery Charge
S
Softness Factor (tb/ta)
trr
Irr
Qrr
dIM/dt
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
IF=30 A, diF/dt = 100 A/µs, VR = 30 V
IF = 30 A,
diF/dt = 200 A/µs,
VR = 390 V, TC = 25°C
IF = 30 A,
diF/dt = 200 A/µs,
VR = 390 V,
TC = 125°C
IF = 30 A,
diF/dt = 1000 A/µs,
VR = 390 V,
TC = 125°C
-
6
-
A
-
450
-
nC
ns
-
60
-
-
1.25
-
-
Maximum di/dt during tb
21
-
A
730
-
nC
800
-
A/µs
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
-
-
0.75
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-247
-
-
30
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-220
-
-
62
°C/W
© 2001 Semiconductor Components Industries, LLC
ISL9R3060G2, ISL9R3060P2 Rev. 4
2
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www.onsemi.com
ISL9R3060G2, ISL9R3060P2 — STEALTH™ Diode
Package Marking and Ordering Information
5000
60
175oC
o
175 C
1000
25oC
150oC
IR, REVERSE CURRENT (µA)
IF, FORWARD CURRENT (A)
50
40
o
125 C
30
20
100oC
10
0
0
0.5
1.0
1.5
2.0
2.5
150oC
125oC
100
100oC
75oC
10
1
25oC
0.1
100
3.0
VR = 390V, TJ = 125°C
100
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
70
60
50
40
30
20
tb AT IF = 60A, 30A, 15A
80
60
40
20
10
ta AT diF/dt = 200A/µs, 500A/µs, 800A/µs
0
10
20
30
40
50
ta AT IF = 60A, 30A, 15A
0
200
60
400
600
800
1000
1200
1400
diF/dt, CURRENT RATE OF CHANGE (A/µs)
IF, FORWARD CURRENT (A)
Figure 3. ta and tb Curves vs Forward Current
Irr, MAX REVERSE RECOVERY CURRENT (A)
VR = 390V, TJ = 125°C
diF/dt = 800A/µs
18
16
14
diF/dt = 500A/µs
12
10
8
diF/dt = 200A/µs
6
0
10
20
30
40
50
60
IF, FORWARD CURRENT (A)
30
IF = 60A
VR = 390V, TJ = 125°C
25
IF = 30A
IF = 15A
20
15
10
5
0
200
400
600
800
1000
1200
1400
1600
diF/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Maximum Reverse Recovery Current
vs Forward Current
© 2001 Semiconductor Components Industries, LLC
ISL9R3060G2, ISL9R3060P2 Rev. 4
1600
Figure 4. ta and tb Curves vs diF/dt
20
Irr, MAX REVERSE RECOVERY CURRENT (A)
600
120
VR = 390V, TJ = 125°C
80
4
500
Figure 2. Reverse Current vs Reverse Voltage
90 tb AT diF/dt = 200A/µs, 500A/µs, 800A/µs
0
400
VR , REVERSE VOLTAGE (V)
Figure 1. Forward Current vs Forward Voltage
100
300
200
VF, FORWARD VOLTAGE (V)
Figure 6. Maximum Reverse Recovery Current
vs diF/dt
3
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ISL9R3060G2, ISL9R3060P2 — STEALTH™ Diode
Typical Performance Curves
1200
VR = 390V, TJ = 125°C
IF = 60A
QRR, REVERSE RECOVERY CHARGE (nC)
S, REVERSE RECOVERY SOFTNESS FACTOR
2.5
IF = 30A
2.0
1.5
IF = 15A
1.0
0.5
200
400
600
800
1000
1200
1400
VR = 390V, TJ = 125°C
1000
IF = 30A
800
600
IF = 15A
400
200
200
1600
600
1000
1200
1400
1600
90
Average Forward Current, I F(AV) (A)
1000
800
600
400
200
0
0.1
1
10
75
60
45
30
15
0
100
25
50
VR , REVERSE VOLTAGE (V)
1.0
75
100
125
150
175
Case temperature, T C (o C )
Figure 9. Junction Capacitance vs Reverse Voltage
THERMAL IMPEDANCE
800
Figure 8. Reverse Recovery Charge vs diF/dt
Figure 7. Reverse Recovery Softness Factor
vs diF/dt
CJ , JUNCTION CAPACITANCE (pF)
400
diF/dt, CURRENT RATE OF CHANGE (A/µs)
diF/dt, CURRENT RATE OF CHANGE (A/µs)
ZθJA, NORMALIZED
IF = 60A
Figure 10. Forward Current Derating Curve
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
SINGLE PULSE
0.01
10-5
10-4
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
101
Figure 11. Normalized Maximum Transient Thermal Impedance
© 2001 Semiconductor Components Industries, LLC
ISL9R3060G2, ISL9R3060P2 Rev. 4
4
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ISL9R3060G2, ISL9R3060P2 — STEALTH™ Diode
Typical Performance Curves (Continued)
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 CONTROL IF
L
IF
DUT
RG
VGE
CURRENT
SENSE
trr
dt
ta
tb
0
+
VDD
-
MOSFET
t1
diF
0.25 IRM
IRM
t2
Figure 12. trr Test Circuit
Figure 13. trr Waveforms and Definitions
I = 1A
L = 40mH
R < 0.1Ω
VDD = 50V
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
L
CURRENT
SENSE
VAVL
R
+
VDD
I V
VDD
DUT
t0
Figure 14. Avalanche Energy Test Circuit
© 2001 Semiconductor Components Industries, LLC
ISL9R3060G2, ISL9R3060P2 Rev. 4
IL
IL
Q1
t1
t2
t
Figure 15. Avalanche Current and
Voltage Waveforms
5
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ISL9R3060G2, ISL9R3060P2 — STEALTH™ Diode
Test Circuit and Waveforms
ISL9R3060G2, ISL9R3060P2 — STEALTH™ Diode
Mechanical Dimensions
Figure 16. TO-247 2L - TO247,MOLDED,2LD, JEDEC OPTION AB
6
© 2001 Semiconductor Components Industries, LLC
ISL9R3060G2, ISL9R3060P2 Rev. 4
6
www.fairchildsemi.com
www.onsemi.com
ISL9R3060G2, ISL9R3060P2 — STEALTH™ Diode
Mechanical Dimensions
Figure 17. TO-220 2L - 2LD,TO220,JEDEC TO-220 VARIATION AC
6
©2001 Fairchild Semiconductor Corporation
ISL9R3060G2, ISL9R3060P2 Rev. 4
7
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