ISL9R860PF2

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ISL9R860PF2 8 A, 600 V, STEALTHTM Diode Features Description • Stealth Recovery trr = 28 ns (@IF = 8 A) The ISL9R860PF2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (Irr) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low Irr and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. • Max Forward Voltage, VF = 2.4 V (@ TC = 25°C) • 600 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant Applications • Switch Mode Power Supplies • Hard Switched PFC Boost Diode • UPS Free Wheeling Diode • Motor Drive FWD • SMPS FWD • Snubber Diode Package Symbol TO-220F-2L K A CATHODE ANODE Device Maximum Ratings TC= 25°C unless otherwise noted Symbol VRRM VRWM VR Parameter Ratings 600 Unit V Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V 8 A Peak Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current (TC = 75oC) IFRM Repetitive Peak Surge Current (20 kHz Square Wave) 16 A IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60 Hz) 100 A PD EAVL TJ, TSTG TL Power Dissipation 26 W Avalanche Energy (1 A, 40 mH) 20 mJ -55 to 175 °C 300 °C Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2003 Fairchild Semiconductor Corporation ISL9R860PF2 Rev. C2 1 www.fairchildsemi.com ISL9R860PF2 — STEALTH™ Diode November 2014 Part Number Top Mark Package ISL9R860PF2 ISL9R860PF2 TO-220F-2L Packing Method Reel Size Tube Tape Width Quantity N/A 50 N/A Electrical Characteristics TC = 25°C unless otherwise noted Symbol Test Conditions Parameter Min Typ Max Unit Off State Characteristics IR Instantaneous Reverse Current VR = 600 V TC = 25°C - - 100 µA TC = 125°C - - 1.0 mA On State Characteristics VF Instantaneous Forward Voltage TC = 25°C - 2.0 2.4 V TC = 125°C - 1.6 2.0 V VR = 10 V , IF = 0 A - 30 - pF IF = 1 A, diF/dt = 100 A/µs, VR = 30 V - 18 25 ns IF = 8 A, diF/dt = 100 A/µs, VR = 30 V IF = 8 A, diF/dt = 200 A/µs, VR = 390 V, TC = 25°C - 21 30 ns - 28 - ns - 3.2 - A - 50 - nC ns IF = 8 A Dynamic Characteristics CJ Junction Capacitance Switching Characteristics trr Reverse Recovery Time trr Reverse Recovery Time Irr Maximum Reverse Recovery Current Qrr Reverse Recovery Charge trr Reverse Recovery Time S Softness Factor (tb/ta) Irr Maximum Reverse Recovery Current Qrr Reverse Recovery Charge trr Reverse Recovery Time S Softness Factor (tb/ta) Irr Maximum Reverse Recovery Current Qrr dIM/dt Reverse Recovery Charge IF = 8 A, diF/dt = 200 A/µs, VR = 390 V, TC = 125°C - 77 - - 3.7 - - 3.4 - A - 150 - nC IF = 8 A, diF/dt = 600 A/µs, VR = 390 V, TC = 125°C - 53 - ns - 2.5 - Maximum di/dt during tb - 6.5 - A 195 - nC - 500 - A/µs Thermal Characteristics RθJC Thermal Resistance Junction to Case - - 4.8 °C/W RθJA Thermal Resistance Junction to Ambient TO-220F - - 70 °C/W ©2003 Fairchild Semiconductor Corporation ISL9R860PF2 Rev. C2 2 www.fairchildsemi.com ISL9R860PF2 — STEALTH™ Diode Package Marking and Ordering Information 16 100 IR, REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 175oC 175oC 14 150oC 12 25oC 10 125oC 8 100oC 6 4 150oC 10 125oC 100oC 1 25oC 2 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 0.1 100 2.25 2.5 2.75 200 300 Figure 1. Forward Current vs Forward Voltage 600 90 VR = 390V, TJ = 125°C VR = 390V, TJ = 125°C 80 70 tb AT diF/dt = 200A/µs, 500A/µs, 800A/µs tb AT IF = 16A, 8A, 4A 70 60 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 500 Figure 2. Reverse Current vs Reverse Voltage 80 50 40 30 20 10 2 4 6 10 8 12 50 40 30 20 ta AT IF = 16A, 8A, 4A 0 0 60 10 ta AT diF/dt = 200A/µs, 500A/µs, 800A/µs 14 0 100 16 200 IF, FORWARD CURRENT (A) 300 400 500 600 700 800 900 diF/dt, CURRENT RATE OF CHANGE (A/µs) 1000 Figure 4. ta and tb Curves vs diF/dt Figure 3. ta and tb Curves vs Forward Current 14 VR = 390V, TJ = 125°C diF/dt = 800A/µs Irr, MAX REVERSE RECOVERY CURRENT (A) 11 Irr, MAX REVERSE RECOVERY CURRENT (A) 400 VR , REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) 10 9 8 diF/dt = 500A/µs 7 6 5 diF/dt = 200A/µs 4 3 2 0 2 4 6 8 10 12 IF, FORWARD CURRENT (A) 14 16 IF = 16A 10 IF = 8A 8 IF = 4A 6 4 2 0 100 200 300 400 500 600 700 800 900 1000 diF/dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Maximum Reverse Recovery Current vs Forward Current ©2003 Fairchild Semiconductor Corporation ISL9R860PF2 Rev. C2 VR = 390V, TJ = 125°C 12 Figure 6. Maximum Reverse Recovery Current vs diF/dt 3 www.fairchildsemi.com ISL9R860PF2 — STEALTH™ Diode Typical Performance Curves 350 S, REVERSE RECOVERY SOFTNESS FACTOR 6 QRR, REVERSE RECOVERY CHARGE (nC) VR = 390V, TJ = 125°C 5 4 IF = 16A IF = 8A 3 IF = 4A 2 1 100 200 300 400 500 600 700 800 900 VR = 390V, TJ = 125°C 300 IF = 16A 250 IF = 8A 200 150 IF = 4A 100 50 100 1000 diF/dt, CURRENT RATE OF CHANGE (A/µs) 200 300 400 500 600 700 800 900 1000 diF/dt, CURRENT RATE OF CHANGE (A/µs) Figure 7. Reverse Recovery Softness Factor vs diF/dt Figure 8. Reverse Recovery Charge vs diF/dt 1200 IF(AV), AVERAGE FORWARD CURRENT (A) CJ , JUNCTION CAPACITANCE (pF) 10 1000 800 600 400 200 0 0.1 1 10 8 6 4 2 0 50 75 100 100 125 150 TC, CASE TEMPERATURE (oC) VR , REVERSE VOLTAGE (V) Figure 9. Junction Capacitance vs Reverse Voltage Figure 10. DC Current Derating Curve 2.0 ZθJA, NORMALIZED THERMAL IMPEDANCE 1.0 0.1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 SINGLE PULSE PEAK TJ = PDM x ZθJA x RθJA + TA 0.001 10-5 10-4 10-3 10-2 10-1 100 101 t, RECTANGULAR PULSE DURATION (s) Figure 11. Normalized Maximum Transient Thermal Impedance ©2003 Fairchild Semiconductor Corporation ISL9R860PF2 Rev. C2 4 www.fairchildsemi.com ISL9R860PF2 — STEALTH™ Diode Typical Performance Curves (Continued) VGE AMPLITUDE AND RG CONTROL diF/dt t1 AND t2 CONTROL IF L IF DUT RG VGE CURRENT SENSE trr dt ta tb 0 + VDD - MOSFET t1 diF 0.25 IRM IRM t2 Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1Ω VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VAVL R + IL VDD DUT t0 Figure 14. Avalanche Energy Test Circuit ©2003 Fairchild Semiconductor Corporation ISL9R860PF2 Rev. C2 IL I V t1 t2 t Figure 15. Avalanche Current and Voltage Waveforms 5 www.fairchildsemi.com ISL9R860PF2 — STEALTH™ Diode Test Circuits and Waveforms ISL9R460PF2 — STEALTH™ Diode Mechanical Dimensions Figure 16. TO-220F 2L - 2LD; TO220; MOLDED; FULL PACK Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-002. ©2003 Fairchild Semiconductor Corporation ISL9R860PF2 Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I71 ©2003 Fairchild Semiconductor Corporation ISL9R860PF2 Rev. C2 7 www.fairchildsemi.com ISL9R460PF2 — STEALTH™ Diode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ F-PFS™ ®* ® Awinda® FRFET® ® ® SM PowerTrench AX-CAP * Global Power Resource TinyBoost® GreenBridge™ PowerXS™ BitSiC™ TinyBuck® Green FPS™ Programmable Active Droop™ Build it Now™ TinyCalc™ ® Green FPS™ e-Series™ QFET CorePLUS™ TinyLogic® QS™ Gmax™ CorePOWER™ TINYOPTO™ Quiet Series™ GTO™ CROSSVOLT™ TinyPower™ RapidConfigure™ IntelliMAX™ CTL™ TinyPWM™ ™ ISOPLANAR™ Current Transfer Logic™ TinyWire™ Marking Small Speakers Sound Louder DEUXPEED® TranSiC™ Dual Cool™ Saving our world, 1mW/W/kW at a time™ and Better™ TriFault Detect™ EcoSPARK® SignalWise™ MegaBuck™ TRUECURRENT®* EfficentMax™ SmartMax™ MICROCOUPLER™ SerDes™ ESBC™ SMART START™ MicroFET™ Solutions for Your Success™ MicroPak™ ® SPM® MicroPak2™ STEALTH™ UHC® MillerDrive™ Fairchild® Ultra FRFET™ SuperFET® MotionMax™ Fairchild Semiconductor® SuperSOT™-3 UniFET™ MotionGrid® FACT Quiet Series™ ® SuperSOT™-6 MTi VCX™ FACT® ® MTx SuperSOT™-8 VisualMax™ FAST® ® ® MVN SupreMOS VoltagePlus™ FastvCore™ ® mWSaver SyncFET™ XS™ FETBench™ OptoHiT™ Sync-Lock™ Xsens™ FPS™ 仙童 ™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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