ISL9V2540S3ST

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SCIS Energy = 250mJ at TJ = 25oC The ISL9V2540S3ST is a next generation ignition IGBT that offers outstanding SCIS capability in the industry standard D²-Pak (TO-263) plastic package. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components. ! Logic Level Gate Drive ! Qualified to AEC Q101 ! RoHS Compliant Applications ! Automotive Ignition Coil Driver Circuits EcoSPARK® devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information. ! Coil - On Plug Applications Package Symbol COLLECTOR R1 GATE GATE EMITTER COLLECTOR (FLANGE) JEDEC TO-263AB D2-Pak ©2009 Fairchild Semiconductor Corporation ISL9V2540S3ST Rev. A1 R2 EMITTER www.fairchildsemi.com ISL9V2540S3ST N-Channel Ignition IGBT November 2009 Symbol BVCER Parameter Collector to Emitter Breakdown Voltage (IC = 1 mA) Ratings 430 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) 24 V ESCIS25 At Starting TJ = 25°C, ISCIS = 12.9A, L = 3.0mHy 250 mJ ESCIS150 mJ At Starting TJ = 150°C, ISCIS = 10A, L = 3.0mHy 150 IC25 Collector Current Continuous, At TC = 25°C, See Fig 9 15.5 A IC110 Collector Current Continuous, At TC = 110°C, See Fig 9 15.3 A VGEM Gate to Emitter Voltage Continuous ±10 V PD Power Dissipation Total TC = 25°C 166.7 W 1.11 W/°C TJ Operating Junction Temperature Range -40 to 175 °C Storage Junction Temperature Range -40 to 175 °C Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 °C Tpkg Max Lead Temp for Soldering (Package Body for 10s) 260 °C ESD Electrostatic Discharge Voltage at 100pF, 1500Ω (HBM) 4 kV Power Dissipation Derating TC > 25°C TSTG TL Package Marking and Ordering Information Device Marking V2540S Device ISL9V2540S3ST Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0, RG = 1KΩ, See Fig. 15 TJ = -40 to 150°C 370 400 430 V BVCES Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0, RG = 0, See Fig. 15 TJ = -40 to 150°C 390 420 450 V BVECS Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V, TC = 25°C 30 - - V BVGES Gate to Emitter Breakdown Voltage IGES = ± 2mA Collector to Emitter Leakage Current VCER = 250V, RG = 1KΩ, See Fig. 11 ICER IECS Emitter to Collector Leakage Current R1 Series Gate Resistance R2 Gate to Emitter Resistance ±12 ±14 - V TC = 25°C - - 25 µA TC = 150°C - - 1 mA VEC = 24V, See TC = 25°C Fig. 11 TC = 150°C - - 1 mA - - 40 mA - 70 - Ω 10K - 26K Ω On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage IC = 6A, VGE = 4V TC = 25°C, See Fig. 3 - 1.37 1.8 V VCE(SAT) Collector to Emitter Saturation Voltage IC = 10A, VGE = 4.5V TC = 150°C See Fig. 4 - 1.77 2.2 V ©2009 Fairchild Semiconductor Corporation ISL9V2540S3ST Rev A1. www.fairchildsemi.com ISL9V2540S3ST N-Channel Ignition IGBT Device Maximum Ratings TA = 25°C unless otherwise noted QG(ON) Gate Charge IC = 10A, VCE = 12V, VGE = 5V, See Fig. 14 VGE(TH) Gate to Emitter Threshold Voltage IC = 1.0mA, VCE = VGE, See Fig. 10 VGEP Gate to Emitter Plateau Voltage - 15.1 - nC TC = 25°C 1.3 - 2.2 V TC = 150°C 0.75 - 1.8 V - 3.1 - V - 0.61 - µs - 2.17 - µs IC = 10A, VCE = 12V Switching Characteristics td(ON)R triseR td(OFF)L tfL SCIS Current Turn-On Delay Time-Resistive Current Rise Time-Resistive Current Turn-Off Delay Time-Inductive Current Fall Time-Inductive Self Clamped Inductive Switching VCE = 14V, RL = 1Ω, VGE = 5V, RG = 1KΩ TJ = 25°C VCE = 300V, L = 500µHy, VGE = 5V, RG = 1KΩ TJ = 25°C, See Fig. 12 - 3.64 - µs - 2.36 - µs TJ = 25°C, L = 3.0mHy, RG = 1KΩ, VGE = 5V, See Fig. 1 & 2 - - 250 mJ TO-263 - - 0.9 °C/W Thermal Characteristics RθJC Thermal Resistance Junction-Case ©2009 Fairchild Semiconductor Corporation ISL9V2540S3ST Rev A1. www.fairchildsemi.com ISL9V2540S3ST N-Channel Ignition IGBT Dynamic Characteristics ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 40 RG = 1KΩ, VGE = 5V,Vdd = 14V 35 30 25 TJ = 25°C 20 15 10 TJ = 150°C 5 SCIS Curves valid for Vclamp Voltages of