ISL9V3036D3STV

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This literature is subject to all applicable copyright laws and is not for resale in any manner. ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 EcoSPARK® 300mJ, 360V, N-Channel Ignition IGBT General Description Applications The ISL9V3036D3S, ISL9V3036S3S, and ISL9V3036P3 are the next generation IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D²Pak (TO-263) and TO-220 plastic packages. These devices are intended for use in automotive ignition circuits, specifically as a coil drivers. Internal diodes provide voltage clamping without the need for external components. • Automotive Ignition Coil Driver Circuits • Coil- On Plug Applications Features • Industry Standard D2-Pak package • SCIS Energy = 300mJ at TJ = 25oC • Logic Level Gate Drive EcoSPARK® devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information. Formerly Developmental Type 49442 Package Symbol JEDEC TO-252AA D-Pak JEDEC TO-263AB D²-Pak JEDEC TO-220AB E C COLLECTOR G R1 GATE G G E R2 E COLLECTOR (FLANGE) EMITTER COLLECTOR (FLANGE) Device Maximum Ratings TJ = 25°C unless otherwise noted Symbol BVCER Parameter Collector to Emitter Breakdown Voltage (IC = 1 mA) Ratings 360 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) 24 V ESCIS25 TJ = 25°C, ISCIS = 14.2A, L = 3.0 mHy 300 mJ ESCIS150 TJ = 150°C, ISCIS = 10.6A, L = 3.0 mHy 170 mJ IC25 Collector Current Continuous, At TC = 25°C, See Fig 9 21 A IC110 Collector Current Continuous, At TC = 110°C, See Fig 9 17 A VGEM Gate to Emitter Voltage Continuous ±10 V PD Power Dissipation Total TC = 25°C 150 W Power Dissipation Derating TC > 25°C 1.0 W/°C Operating Junction Temperature Range -40 to 175 °C Storage Junction Temperature Range -40 to 175 °C Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 °C Tpkg Max Lead Temp for Soldering (Package Body for 10s) 260 °C ESD Electrostatic Discharge Voltage at 100pF, 1500Ω 4 kV TJ TSTG TL ©2004 Fairchild Semiconductor Corporation ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C4, October 2013 ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 October 2013 Device Marking V3036D Device ISL9V3036D3ST Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 V3036S V3036P ISL9V3036S3ST TO-263AB 330mm 24mm 800 ISL9V3036P3 TO-220AA Tube N/A 50 V3036D ISL9V3036D3S TO-252AA Tube N/A 75 V3036S ISL9V3036S3S TO-263AB Tube N/A 50 Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0, RG = 1KΩ, See Fig. 15 TJ = -40 to 150°C 330 360 390 V BVCES Collector to Emitter Breakdown Voltage 350 380 410 V BVECS Emitter to Collector Breakdown Voltage IC = 10mA, VGE = 0, RG = 0, See Fig. 15 TJ = -40 to 150°C IC = -75mA, VGE = 0V, TC = 25°C 30 - - V BVGES Gate to Emitter Breakdown Voltage IGES = ± 2mA Collector to Emitter Leakage Current VCER = 250V, RG = 1KΩ, See Fig. 11 ICER IECS R1 R2 Emitter to Collector Leakage Current Series Gate Resistance ±12 ±14 - V TC = 25°C - - 25 µA TC = 150°C - - 1 mA VEC = 24V, See TC = 25°C Fig. 11 TC = 150°C - - 1 mA - - 40 mA Gate to Emitter Resistance - 70 - Ω 10K - 26K Ω On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage VCE(SAT) Collector to Emitter Saturation Voltage VCE(SAT) Collector to Emitter Saturation Voltage IC = 6A, VGE = 4V TC = 25°C, See Fig. 3 - 1.25 1.60 V TC = 150°C, See Fig. 4 - 1.58 1.80 V IC = 15A, VGE = 4.5V TC = 150°C - 1.90 2.20 V - 17 - nC IC = 10A, VGE = 4.5V Dynamic Characteristics QG(ON) Gate Charge VGE(TH) Gate to Emitter Threshold Voltage VGEP Gate to Emitter Plateau Voltage IC = 10A, VCE = 12V, VGE = 5V, See Fig. 14 IC = 1.0mA, VCE = VGE, See Fig. 10 IC = 10A, TC = 25°C TC = 150°C VCE = 12V 1.3 - 2.2 V 0.75 - 1.8 V - 3.0 - V Switching Characteristics td(ON)R Current Turn-On Delay Time-Resistive td(OFF)L Current Turn-Off Delay Time-Inductive trR tfL SCIS Current Rise Time-Resistive Current Fall Time-Inductive Self Clamped Inductive Switching VCE = 14V, RL = 1Ω, VGE = 5V, RG = 1KΩ TJ = 25°C, See Fig. 12 - 0.7 4 µs - 2.1 7 µs VCE = 300V, RL = 500µH, VGE = 5V, RG = 1KΩ TJ = 25°C, See Fig. 12 - 4.8 15 µs - 2.8 15 µs TJ = 25°C, L = 3.0 mH, RG = 1KΩ, VGE = 5V - - 300 mJ TO-252, TO-263, TO-220 - - 1.0 °C/W Thermal Characteristics RθJC Thermal Resistance Junction-Case ©2004 Fairchild Semiconductor Corporation ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C4, October 2013 ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Package Marking and Ordering Information ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 30 RG = 1kΩ, VGE = 5V, Vdd = 14V 25 20 15 TJ = 25°C TJ = 150°C 10 5 SCIS Curves valid for Vclamp Voltages of