ISL9V3040D3STV

ISL9V3040D3STV ECOSPARK) Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT Features • • • • SCIS Energy = 300 mJ at TJ = 25°C Logic Level Gate Drive This Device is Pb−Free and is RoHS Compliant AEC−Q101 Qualified and PPAP Capable www.onsemi.com Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Applications MAXIMUM RATINGS (TJ = 25°C Unless Otherwise Stated) Parameter Symbol Value Units Collector to Emitter Breakdown Voltage (IC = 1 mA) BVCER 400 V Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) BVECS 24 V ISCIS = 14.2 A, L = 3.0 mHz, RGE = 1 K (Note 1), TC = 25°C ESCIS25 300 mJ ISCIS = 10.6 A, L = 3.0 mHz, RGE = 1 K (Note 2), TC = 150°C ESCIS150 170 mJ Collector Current Continuous, at VGE = 4.0 V, TC = 25°C IC25 21 A Collector Current Continuous, at VGE = 4.0 V, TC = 110°C IC110 17 A Gate to Emitter Voltage Continuous VGEM ±10 V Power Dissipation Total, TC = 25°C PD 150 W Power Dissipation Derating, TC  25°C PD 1 W/°C TJ, TSTG −55 to 175 °C Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 300 °C Reflow soldering according to JESD020C TPKG 260 °C HBM−Electrostatic Discharge Voltage at100 pF, 1500  ESD 4 kV CDM−Electrostatic Discharge Voltage at 1 ESD 2 kV Operating Junction and Storage Temperature 4 1 2 3 DPAK (SINGLE GAUGE) CASE 369C MARKING DIAGRAM AYWW ON ISL 3040DG ISL3040DG A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Self Clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on the test conditions that is starting TJ = 25°C, L = 3 mHz, ISCIS = 14.2 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp. 2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on the test conditions that is starting TJ = 150°C, L = 3 mHz, ISCIS = 10.6 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp. © Semiconductor Components Industries, LLC, 2019 May, 2019 − Rev. 0 1 Publication Order Number: ISL9V3040D3STV/D ISL9V3040D3STV THERMAL RESISTANCE RATINGS Characteristic Junction−to−Case – Steady State (Drain) (Notes 1, 3 and 4) Symbol Max Units RJC 1 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless Otherwise Specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BVCER ICE = 2 mA, VGE = 0 V, RGE = 1 K TJ = −40 to 150°C 370 400 430 V Collector to Emitter Breakdown Voltage BVCES ICE = 10 mA, VGE = 0 V, RGE = 0, TJ = −40 to 150°C 390 420 450 V Emitter to Collector Breakdown Voltage BVECS ICE = −75 mA, VGE = 0 V, TJ = 25°C 30 − − V Gate to Emitter Breakdown Voltage BVGES IGES = ±2 mA ±12 ±14 − V Collector to Emitter Leakage Current ICER VCE = 175 V, RGE = 1 K TJ = 25°C − − 25 A TJ = 150°C − − 1 mA VEC = 24 V TJ = 25°C − − 1 mA TJ = 150°C Emitter to Collector Leakage Current IECS − − 40 Series Gate Resistance R1 − 70 −  Gate to Emitter Resistance R2 10 K − 26 K  ON CHARACTERISTICS Collector to Emitter Saturation Voltage VCE(SAT) ICE = 6 A, VGE = 4 V TJ = 25°C − 1.25 1.65 V Collector to Emitter Saturation Voltage VCE(SAT) ICE = 10 A, VGE = 4.5 V TJ = 150°C − 1.58 1.80 V Collector to Emitter Saturation Voltage VCE(SAT) ICE = 15 A, VGE = 4.5 V TJ = 150°C − 1.90 2.20 V − 17 − nC TJ = 25°C 1.3 − 2.2 V TJ = 150°C 0.75 − 1.8 DYNAMIC CHARACTERISTICS Gate Charge QG(ON) ICE = 10 A, VCE = 12 V, VGE = 5 V Gate to Emitter Threshold Voltage VGE(TH) ICE = 1 mA, VCE = VGE Gate to Emitter Plateau Voltage VGEP VCE = 12 V, ICE = 10 A − 3.0 − V td(ON)R VCE = 14 V, RL = 1  VGE = 5 V, RG = 470  TJ = 25°C − 0.7 4 s − 2.1 7 VCE = 300 V, L = 1 mH, VGE = 5 V, RG = 470  ICE = 6.5 A, TJ = 25°C − 4.8 15 − 2.8 15 SWITCHING CHARACTERISTICS Current Turn−On Delay Time−Resistive Current Rise Time−Resistive trR Current Turn−Off Delay Time−Inductive Current Fall Time−Inductive td(OFF)L tfL PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Diameter Tape Width Qty ISL9V3040G1 ISL9V3040D3STV DPAK (Pb−Free) 330 mm 16 mm 2500 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 ISL9V3040D3STV TYPICAL CHARACTERISTICS Figure 1. Self Clamped Inductive Switching Current vs. Time in Clamp Figure 2. Self Clamped Inductive Switching Current vs. Inductance Figure 3. Collector to Emitter On−State Voltage vs. Junction Temperature Figure 4. Collector to Emitter On−State Voltage vs. Junction Temperature Figure 5. Collector to Emitter On−State Voltage vs. Collector Current Figure 6. Collector to Emitter On− State Voltage vs. Collector Current www.onsemi.com 3 ISL9V3040D3STV TYPICAL CHARACTERISTICS (continued) Figure 7. Collector to Emitter On−State Voltage vs. Collector Current Figure 8. Transfer Characteristics Figure 9. DC Collector Current vs. Case Temperature Figure 10. Gate Charge Figure 11. Threshold Voltage vs. Junction Temperature Figure 12. Leakage Current vs. Junction Temperature www.onsemi.com 4 ISL9V3040D3STV TYPICAL CHARACTERISTICS (continued) Figure 13. Switching Time vs. Junction Temperature Figure 14. Capacitance vs. Collector to Emitter Voltage Figure 15. Break down Voltage vs. Series Resistance Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case www.onsemi.com 5 ISL9V3040D3STV Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit Figure 19. Energy Test Circuit Figure 20. Energy Waveforms www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 B c2 4 L3 Z D 1 L4 C A 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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