DATA SHEET
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ECOSPARK Ignition IGBT
COLLECTOR
300 mJ, 400 V, N−Channel Ignition IGBT
ISL9V3040x3ST-F085C
R1
GATE
R2
Features
•
•
•
•
SCIS Energy = 300 mJ at TJ = 25°C
Logic Level Gate Drive
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
EMITTER
Applications
• Automotive Ignition Coil Driver Circuits
• High Current Ignition System
• Coil on Plug Application
DPAK3
CASE 369AS
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
BVCER
Collector to Emitter Breakdown
Voltage (IC = 1 mA)
400
V
BVECS
Emitter to Collector Voltage − Reverse
Battery Condition (IC = 10 mA)
24
V
ESCIS25
ISCIS = 14.2 A, L = 3.0 mHy,
RGE = 1 KW, TC = 25°C (Note 1)
300
mJ
170
mJ
ESCIS150 ISCIS = 10.6 A, L = 3.0 mHy,
RGE = 1 KW, TC = 150°C (Note 2)
IC25
Collector Current Continuous
at VGE = 4.0 V, TC = 25°C
21
A
IC110
Collector Current Continuous
at VGE = 4.0 V, TC = 110°C
17
A
VGEM
Gate to Emitter Voltage Continuous
±10
V
PD
Power Dissipation Total, TC = 25°C
150
W
1
W/°C
−55 to +175
°C
Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
300
°C
TPKG
Reflow Soldering according to
JESD020C
260
°C
ESD
HBM−Electrostatic Discharge Voltage
at 100 pF, 1500 W
4
kV
CDM−Electrostatic Discharge Voltage
at 1 W
2
kV
Power Dissipation Derating, TC > 25°C
TJ, TSTG Operating Junction and Storage
Temperature
TL
November, 2021 − Rev. 2
TO−220−3LD
CASE 340AT
MARKING DIAGRAMS
AYWW
XXX
XXXXXG
A
Y
WW
XXXX
G
ZZ
V3040PC
AYWWZZ
V3040PC
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Assembly Lot Number
= Device Code
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Self clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on
the test conditions that is starting TJ = 25°C, L = 3 mHy, ISCIS = 14.2 A,
VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on
the test conditions that is starting TJ = 150°C, L = 3mHy, ISCIS = 10.6 A,
VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
© Semiconductor Components Industries, LLC, 2016
D2PAK−3
CASE 418AJ
1
See detailed ordering and shipping information on page 7
of this data sheet.
Publication Order Number:
ISL9V3040−F085C/D
ISL9V3040x3ST−F085C
THERMAL RESISTANCE RATINGS
Characteristic
Symbol
Max
Units
RqJC
1
°C/W
Junction−to−Case – Steady State (Drain)
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
OFF CHARACTERISTICS
BVCER
Collector to Emitter Breakdown
Voltage
ICE = 2 mA, VGE = 0 V,
RGE = 1 kW,
TJ = −40 to 150°C
370
400
430
V
BVCES
Collector to Emitter Breakdown
Voltage
ICE = 10 mA, VGE = 0 V,
RGE = 0,
TJ = −40 to 150°C
390
420
450
V
BVECS
Emitter to Collector Breakdown
Voltage
ICE = −75 mA, VGE = 0 V,
TJ = 25°C
30
−
−
V
BVGES
Gate to Emitter Breakdown Voltage
IGES = ±2 mA
±12
±14
−
V
ICER
Collector to Emitter Leakage Current
VCE = 175 V
RGE = 1 kW
TJ = 25°C
−
−
25
mA
TJ = 150°C
−
−
1
mA
VEC = 24 V
TJ = 25°C
−
−
1
mA
TJ = 150°C
−
−
40
−
70
−
W
10K
−
26K
W
IECS
Emitter to Collector Leakage Current
R1
Series Gate Resistance
R2
Gate to Emitter Resistance
ON CHARACTERISTICS
VCE(SAT)
Collector to Emitter Saturation
Voltage
ICE = 6 A, VGE = 4 V, TJ = 25°C
−
1.25
1.65
V
VCE(SAT)
Collector to Emitter Saturation
Voltage
ICE = 10 A, VGE = 4.5 V, TJ = 150°C
−
1.58
1.80
V
VCE(SAT)
Collector to Emitter Saturation
Voltage
ICE = 15 A, VGE = 4.5 V, TJ = 150°C
−
1.90
2.20
V
DYNAMIC CHARACTERISTICS
QG(ON)
Gate Charge
ICE = 10 A, VCE = 12 V, VGE = 5 V
VGE(TH)
Gate to Emitter Threshold Voltage
ICE = 1 mA
VCE = VGE
Gate to Emitter Plateau Voltage
VCE = 12 V, ICE = 10 A
VGEP
−
17
−
nC
TJ = 25°C
1.3
−
2.2
V
TJ = 150°C
0.75
−
1.8
−
3.0
−
V
VCE = 14 V, RL = 1 W,
VGE = 5 V, RG = 470 W,
TJ = 25°C
−
0.7
4
ms
−
2.1
7
VCE = 300 V, L = 1 mH,
VGE = 5 V, RG = 470 W,
ICE = 6.5 A, TJ = 25°C
−
4.8
15
−
2.8
15
SWITCHING CHARACTERISTICS
td(ON)R
trR
td(OFF)L
tfL
Current Turn−On Delay
Time−Resistive
Current Rise Time−Resistive
Current Turn−Off Delay
Time−Inductive
Current Fall Time−Inductive
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
ISL9V3040x3ST−F085C
TYPICAL CHARACTERISTICS
Figure 1. Self Clamped Inductive Switching
Current vs. Time in Clamp
Figure 2. Self Clamped Inductive
Switching Current vs. Inductance
Figure 4. Collector to Emitter On−State Voltage
vs. Junction Temperature
Figure 3. Collector to Emitter On−State Voltage
vs. Junction Temperature
Figure 5. Collector to Emitter On−State Voltage
vs. Collector Current
Figure 6. Collector to Emitter On−State Voltage
vs. Collector Current
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3
ISL9V3040x3ST−F085C
TYPICAL CHARACTERISTICS (continued)
Figure 7. Collector to Emitter On−State Voltage
vs. Collector Current
Figure 8. Transfer Characteristics
Figure 9. DC Collector Current vs. Case
Temperature
Figure 10. Gate Charge
Figure 11. Threshold Voltage vs. Junction
Temperature
Figure 12. Leakage Current vs. Junction
Temperature
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4
ISL9V3040x3ST−F085C
TYPICAL CHARACTERISTICS (continued)
Figure 13. Switching Time vs. Junction Temperature
Figure 14. Capacitance vs. Collector to Emitter
Figure 15. Break Down Voltage vs. Series Resistance
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
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5
ISL9V3040x3ST−F085C
TEST CIRCUIT AND WAVEFORMS
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
Figure 19. Energy Test Circuit
Figure 20. Energy Waveforms
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6
ISL9V3040x3ST−F085C
PACKAGE MARKING AND ORDERING INFORMATION
Device
Package
Shipping†
ISL9V3040D3ST−F085C
DPAK
(Pb−Free)
2500 Units/Tape & Reel
ISL9V3040S3ST−F085C
D2PAK
(Pb−Free)
800 Units/Tape & Reel
ISL9V3040P3−F085C
TO220
(Pb−Free)
50 Units/Tube
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ECOSPARK is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−3LD
CASE 340AT
ISSUE A
DATE 03 OCT 2017
Scale 1:1
DOCUMENT NUMBER:
DESCRIPTION:
98AON13818G
TO−220−3LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE A
DATE 28 SEP 2022
GENERIC
MARKING DIAGRAM*
XXXXXX
XXXXXX
AYWWZZ
XXXX
A
Y
WW
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
DOCUMENT NUMBER:
DESCRIPTION:
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
98AON13810G
DPAK3 (TO−252 3 LD)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
SCALE 1:1
GENERIC MARKING DIAGRAMS*
XX
XXXXXXXXX
AWLYWWG
IC
DOCUMENT NUMBER:
DESCRIPTION:
XXXXXXXXG
AYWW
Standard
98AON56370E
AYWW
XXXXXXXXG
AKA
Rectifier
XXXXXX
XXYMW
SSG
DATE 11 MAR 2021
XXXXXX = Specific Device Code
A
= Assembly Location
WL
= Wafer Lot
Y
= Year
WW
= Work Week
W
= Week Code (SSG)
M
= Month Code (SSG)
G
= Pb−Free Package
AKA
= Polarity Indicator
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
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