ISL9V3040S3ST

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This literature is subject to all applicable copyright laws and is not for resale in any manner. ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARKŠ 300mJ, 400V, N-Channel Ignition IGBT General Description Formerly Developmental Type 49362 The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D²-Pak (TO-263), and TO-262 and TO220 plastic packages. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components. Applications • Automotive Ignition Coil Driver Circuits • Coil- On Plug Applications Features EcoSPARKŠ devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information. • Space saving D-Pak package availability • SCIS Energy = 300mJ at TJ = 25oC • Logic Level Gate Drive Package Symbol JEDEC TO-263AB D²-Pak JEDEC TO-220AB E C G COLLECTOR G E R1 GATE JEDEC TO-252AA D-Pak JEDEC TO-262AA E R2 C G G EMITTER E COLLECTOR (FLANGE) Device Maximum Ratings TA = 25°C unless otherwise noted Symbol BVCER Parameter Collector to Emitter Breakdown Voltage (IC = 1 mA) Ratings 430 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) 24 V ESCIS25 At Starting TJ = 25°C, ISCIS = 14.2A, L = 3.0 mHy 300 mJ ESCIS150 At Starting TJ = 150°C, ISCIS = 10.6A, L = 3.0 mHy 170 mJ IC25 Collector Current Continuous, At TC = 25°C, See Fig 9 21 A IC110 Collector Current Continuous, At TC = 110°C, See Fig 9 17 A VGEM Gate to Emitter Voltage Continuous ±10 V PD Power Dissipation Total TC = 25°C 150 W Power Dissipation Derating TC > 25°C 1.0 W/°C TJ TSTG TL Operating Junction Temperature Range -40 to 175 °C Storage Junction Temperature Range -40 to 175 °C °C Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 Tpkg Max Lead Temp for Soldering (Package Body for 10s) 260 °C ESD Electrostatic Discharge Voltage at 100pF, 1500Ω 4 kV ©2004 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D, October 20 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 October 20 Device Marking V3040D Device ISL9V3040D3ST Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 V3040S V3040P ISL9V3040S3ST TO-263AB 330mm 24mm 800 ISL9V3040P3 TO-220AA Tube N/A 50 V3040S ISL9V3040S3 TO-262AA Tube N/A 50 V3040D ISL9V3040D3S TO-252AA Tube N/A 75 V3040S ISL9V3040S3S TO-263AB Tube N/A 50 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units IC = 2mA, VGE = 0, RG = 1KΩ, See Fig. 15 TJ = -40 to 150°C 370 400 430 V IC = 10mA, VGE = 0, RG = 0, See Fig. 15 TJ = -40 to 150°C 390 420 450 V IC = -75mA, VGE = 0V, TC = 25°C 30 - - V IGES = ± 2mA ±12 ±14 - V - - 25 µA TC = 150°C - - 1 mA VEC = 24V, See TC = 25°C Fig. 11 TC = 150°C - - 1 mA - - 40 mA Off State Characteristics BVCER Collector to Emitter Breakdown Voltage BVCES Collector to Emitter Breakdown Voltage BVECS Emitter to Collector Breakdown Voltage BVGES Gate to Emitter Breakdown Voltage ICER Collector to Emitter Leakage Current IECS Emitter to Collector Leakage Current R1 R2 Series Gate Resistance VCER = 250V, RG = 1KΩ, See Fig. 11 TC = 25°C Gate to Emitter Resistance - 70 - Ω 10K - 26K Ω On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage VCE(SAT) Collector to Emitter Saturation Voltage VCE(SAT) Collector to Emitter Saturation Voltage IC = 6A, VGE = 4V TC = 25°C, See Fig. 3 - 1.25 1.60 V IC = 10A, VGE = 4.5V TC = 150°C, See Fig. 4 - 1.58 1.80 V IC = 15A, VGE = 4.5V TC = 150°C - 1.90 2.20 V - 17 - nC Dynamic Characteristics QG(ON) Gate Charge VGE(TH) Gate to Emitter Threshold Voltage VGEP Gate to Emitter Plateau Voltage IC = 10A, VCE = 12V, VGE = 5V, See Fig. 14 IC = 1.0mA, VCE = VGE, See Fig. 10 TC = 25°C TC = 150°C IC = 10A, VCE = 12V 1.3 - 2.2 V 0.75 - 1.8 V - 3.0 - V Switching Characteristics td(ON)R Current Turn-On Delay Time-Resistive td(OFF)L Current Turn-Off Delay Time-Inductive trR tfL SCIS Current Rise Time-Resistive Current Fall Time-Inductive Self Clamped Inductive Switching VCE = 14V, RL = 1Ω, VGE = 5V, RG = 1KΩ TJ = 25°C, See Fig. 12 - 0.7 4 µs - 2.1 7 µs VCE = 300V, L = 500µHy, VGE = 5V, RG = 1KΩ TJ = 25°C, See Fig. 12 - 4.8 15 µs - 2.8 15 µs TJ = 25°C, L = 3.0 mHy, RG = 1KΩ, VGE = 5V, See Fig. 1 & 2 - - 300 mJ All packages - - 1.0 °C/W Thermal Characteristics RθJC Thermal Resistance Junction-Case ©2004 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D, October 20 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Package Marking and Ordering Information ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 30 RG = 1kΩ, VGE = 5V,Vdd = 14V 25 20 15 TJ = 25°C TJ = 150°C 10 5 SCIS Curves valid for Vclamp Voltages of