ISL9V5036P3-F085

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Other names and brands may be claimed as the property of others. ISL9V5036P3-F085 EcoSPARK® 500mJ,360,N-Channel Ignition IGBT ISL9V5036P3-F085 EcoSPARK® 500mJ, 360V, N-Channel Ignition IGBT General Description Applications The ISL9V5036P3_F085 is the next generation IGBT that offer outstanding SCIS capability in the TO-220 plastic package. This device is intended for use in automotive ignition circuit, specifically as coil driver. Internal diode provide voltage clamping without the need for external component. EcoSPARK® devices can be custom made to specific clamp voltages. Contact your nearest ON Semiconductor sales office for more information. • Automotive Ignition Coil Driver Circuits • Coil-On Plug Applications Features • • • • • Industry Standard TO-220 package SCIS Energy = 500mJ at TJ = 25oC Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant Formerly Developmental Type 49443 Package Symbol COLLECTOR JEDEC TO-220AB EC G R1 GATE R2 EMITTER COLLECTOR (FLANGE) Device Maximum Ratings TA = 25°C unless otherwise noted Symbol BVCER Parameter Collector to Emitter Breakdown Voltage (IC = 1 mA) Ratings 390 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) 24 V ESCIS25 At Starting TJ = 25°C, ISCIS = 38.5A, L = 670 µHy 500 mJ ESCIS150 mJ At Starting TJ = 150°C, ISCIS = 30A, L = 670 µHy 300 IC25 Collector Current Continuous, At TC = 25°C, See Fig 9 46 A IC110 Collector Current Continuous, At TC = 110°C, See Fig 9 31 A VGEM Gate to Emitter Voltage Continuous ±10 V PD Power Dissipation Total TC = 25°C 250 W Power Dissipation Derating TC > 25°C 1.67 W/°C Operating Junction Temperature Range -40 to 175 °C Storage Junction Temperature Range -40 to 175 °C Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 °C Tpkg Max Lead Temp for Soldering (Package Body for 10s) 260 °C ESD Electrostatic Discharge Voltage at 100pF, 1500Ω 4 kV TJ TSTG TL ©2011 Semiconductor Components Industries, LLC. August-2017,Rev. 3 Publication Order Number: ISL9V5036P3-F085/D Device Marking Device Package Reel Size V5036P ISL9V5036P3-F085 TO-220AB Tube Tape Width Quantity N/A 50 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0, RG = 1KΩ, See Fig. 15 TJ = -40 to 150°C 330 360 390 V BVCES Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0, RG = 0, See Fig. 15 TJ = -40 to 150°C 360 390 420 V BVECS Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V, TC = 25°C 30 - - V BVGES Gate to Emitter Breakdown Voltage IGES = ± 2mA Collector to Emitter Leakage Current VCER = 250V, RG = 1KΩ, See Fig. 11 ICER IECS Emitter to Collector Leakage Current R1 Series Gate Resistance R2 Gate to Emitter Resistance ±12 ±14 - V TC = 25°C - - 25 µA TC = 150°C - - 1 mA VEC = 24V, See TC = 25°C Fig. 11 TC = 150°C - - 1 mA - - 40 mA - 75 - Ω 10K - 30K Ω On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage IC = 10A, VGE = 4.0V TC = 25°C, See Fig. 4 - 1.17 1.60 V VCE(SAT) Collector to Emitter Saturation Voltage IC = 15A, VGE = 4.5V TC = 150°C - 1.50 1.80 V - 32 - nC TC = 25°C 1.3 - 2.2 V TC = 150°C 0.75 - 1.8 V - 3.0 - V Dynamic Characteristics QG(ON) Gate Charge IC = 10A, VCE = 12V, VGE = 5V, See Fig. 14 VGE(TH) Gate to Emitter Threshold Voltage IC = 1.0mA, VCE = VGE, See Fig. 10 VGEP Gate to Emitter Plateau Voltage IC = 10A, VCE = 12V Switching Characteristics td(ON)R trR td(OFF)L tfL SCIS Current Turn-On Delay Time-Resistive Current Rise Time-Resistive Current Turn-Off Delay Time-Inductive Current Fall Time-Inductive Self Clamped Inductive Switching VCE = 14V, RL = 1Ω, VGE = 5V, RG = 1KΩ TJ = 25°C, See Fig. 12 - 0.7 4 µs - 2.1 7 µs VCE = 300V, L = 2mH, VGE = 5V, RG = 1KΩ TJ = 25°C, See Fig. 12 - 10.8 15 µs - 2.8 15 µs - - 500 mJ - - 0.6 °C/W TJ = 25°C, L = 670 µH, RG = 1KΩ, VGE = 5V, See Fig. 1 & 2 Thermal Characteristics RθJC Thermal Resistance Junction-Case www.onsemi.com 2 ISL9V5036P3-F085 EcoSPARK® 500mJ,360,N-Channel Ignition IGBT Package Marking and Ordering Information ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 45 RG = 1KΩ, VGE = 5V,Vdd = 14V 40 35 30 TJ = 25°C 25 20 15 TJ = 150°C 10 5 SCIS Curves valid for Vclamp Voltages of