DATA SHEET
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ECOSPARK) Ignition IGBT
COLLECTOR
500 mJ, 360 V, N−Channel Ignition IGBT
R1
GATE
ISL9V5036S3ST,
ISL9V5036P3-F085,
ISL9V5036S3ST-F085C
R2
EMITTER
COLLECTOR
(FLANGE)
General Description
T h e I S L 9 V 5 0 3 6 S 3 S T, I S L 9 V 5 0 3 6 S 3 S T −F 0 8 5 C a n d
ISL9V5036P3−F085 are the next generation IGBTs that offer
outstanding SCIS capability in the D2−Pak (TO−263) and TO−220
plastic package. These devices are intended for use in automotive
ignition circuits, specifically as coil drivers. Internal diodes provide
voltage clamping without the need for external components.
ECOSPARK devices can be custom made to specific clamp
voltages. Contact your nearest onsemi sales office for more
information.
Formerly Developmental Type 49443.
G
E
D2PAK−3
(TO−263, 3−Lead)
CASE 418AJ
D2−Pak package
Industry Standard
SCIS Energy = 500 mJ at TJ = 25°C
Logic Level Gate Drive
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
A
Y
WW
XXXX
ZZ
G
Applications
• Automotive Ignition Coil Driver Circuits
• Coil−On Plug Applications
C
E
TO−220−3LD
CASE 340AT
MARKING DIAGRAM
AYWW
XXX
XXXXXG
Features
•
•
•
•
•
G
AYWWZZ
XXXXX
= Assembly Location
= Year
= Work Week
= Device Code
= Assembly Lot Number
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
© Semiconductor Components Industries, LLC, 2009
July, 2022 − Rev. 4
1
Publication Order Number:
ISL9V5036S3ST/D
ISL9V5036S3ST, ISL9V5036P3−F085, ISL9V5036S3ST−F085C
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector to Emitter Breakdown Voltage (IC = 1 mA)
BVCER
390
V
Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA)
BVECS
24
V
At Starting TJ = 25°C, ISCIS = 38.5A, L = 670 Hy
ESCIS25
500
mJ
At Starting TJ = 150°C, ISCIS = 30A, L = 670 Hy
ESCIS150
300
mJ
IC25
46
A
Collector Current Continuous, at TC = 25°C, See Figure 9
Collector Current Continuous, at TC = 110°C, See Figure 9
IC110
31
A
Gate to Emitter Voltage Continuous
VGEM
±10
V
Power Dissipation Total TC = 25°C
PD
250
W
1.67
W/°C
TJ
−40 to 175
°C
TSTG
−40 to 175
°C
Power Dissipation Derating TC 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6 mm from Case for 10 s)
TL
300
°C
Max Lead Temp for Soldering (Package Body for 10s)
Tpkg
260
°C
Electrostatic Discharge Voltage at100 pF, 1500
ESD
4
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction−Case
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2
Symbol
Value
Unit
RJC
0.6
°C/W
ISL9V5036S3ST, ISL9V5036P3−F085, ISL9V5036S3ST−F085C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF STATE CHARACTERISTICS
Collector to Emitter Breakdown Voltage
BVCER
IC = 2 mA, VGE = 0 V,
RG = 1 k See Figure 15
TJ = −40 to 150°C
330
360
390
V
Collector to Emitter Breakdown Voltage
BVCES
IC = 10 mA, VGE = 0 V,
RG = 0, See Figure 15
TJ = −40 to 150°C
360
390
420
V
Emitter to Collector Breakdown Voltage
BVECS
IC = −75 mA, VGE = 0 V,
TJ = 25°C
30
−
−
V
Gate to Emitter Breakdown Voltage
BVGES
IGES = ±2 mA
±12
±14
−
V
Collector to Emitter Leakage Current
Emitter to Collector Leakage Current
ICER
IECS
VCER = 250 V,
RG = 1 k,
See Figure 11
TC = 25°C
−
−
25
A
TC = 150°C
−
−
1
mA
VEC = 24 V,
See Figure 11
TC = 25°C
−
−
1
mA
TC = 150°C
−
−
40
Series Gate Resistance
R1
−
75
−
Gate to Emitter Resistance
R2
10
−
30
k
ON STATE CHARACTERISTICS
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = 10 A, VGE = 4.0 V
TC = 25°C
See Figure 4
−
1.17
1.60
V
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = 15 A, VGE = 4.5 V
TC = 150°C
−
1.50
1.80
V
−
32
−
nC
TC = 25°C
1.3
−
2.2
V
TC = 150°C
0.75
−
1.8
IC = 10 A, VCE = 12 V
−
3.0
−
V
VCE = 14 V, RL = 1
VGE = 5 V, RG = 1 k
TJ = 25°C, See Figure 12
−
0.7
4
s
−
2.1
7
VCE = 300 V, L = 2 mH,
VGE = 5 V, RG = 1 k
TJ = 25°C, See Figure 12
−
10.8
15
−
2.8
15
TJ = 25°C, L = 670 H,
RG = 1 k, VGE = 5 V,
See Figures 1, 2
−
−
500
DYNAMIC CHARACTERISTICS
Gate Charge
QG(ON)
IC = 10 A, VCE = 12 V, VGE = 5 V,
See Figure 14
Gate to Emitter Threshold Voltage
VGE(TH)
ICE = 1.0 mA,
VCE = VGE,
See Figure 10
Gate to Emitter Plateau Voltage
VGEP
SWITCHING CHARACTERISTICS
Current Turn−On Delay Time−Resistive
Current Rise Time−Resistive
Current Turn−Off Delay Time−Inductive
Current Fall Time−Inductive
Self Clamped Inductive Switching
td(ON)R
trR
td(OFF)L
tfL
SCIS
mJ
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
ISL9V5036S3ST, ISL9V5036P3−F085, ISL9V5036S3ST−F085C
TYPICAL CHARACTERISTICS
45
RG = 1 k, VGE = 5 V, Vdd = 14 V
40
ISCIS, INDUCTIVE SWITCHING
CURRENT (A)
ISCIS, INDUCTIVE SWITCHING
CURRENT (A)
45
35
30
25
TJ = 25°C
20
15
TJ = 150°C
10
5
0
SCIS Curves valid for Vclamp Voltages of
