ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
EcoSPARK® 500mJ, 360V, N-Channel Ignition IGBT
General Description
Applications
• Automotive Ignition Coil Driver Circuits
• Coil-On Plug Applications
The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next
generation IGBTs that offer outstanding SCIS capability in the D²Pak (TO-263) and TO-220 plastic package. These devices are
intended for use in automotive ignition circuits, specifically as coil
drivers. Internal diodes provide voltage clamping without the need
for external components.
Features
•
•
•
•
•
EcoSPARK® devices can be custom made to specific clamp
voltages. Contact your nearest ON Semiconductor sales
office for more information.
Industry Standard D2-Pak package
SCIS Energy = 500mJ at TJ = 25oC
Logic Level Gate Drive
Qualified to AEC Q101
RoHS Compliant
Formerly Developmental Type 49443
Package
Symbol
COLLECTOR
JEDEC TO-263AB
D²-Pak
JEDEC TO-220AB
JEDEC TO-262AA
EC
G
EC
G
R1
GATE
G
R2
E
EMITTER
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCER
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Ratings
390
Units
V
BVECS
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
24
V
ESCIS25
At Starting TJ = 25°C, ISCIS = 38.5A, L = 670 µHy
500
mJ
ESCIS150
mJ
At Starting TJ = 150°C, ISCIS = 30A, L = 670 µHy
300
IC25
Collector Current Continuous, At TC = 25°C, See Fig 9
46
A
IC110
Collector Current Continuous, At TC = 110°C, See Fig 9
31
A
VGEM
Gate to Emitter Voltage Continuous
±10
V
PD
Power Dissipation Total TC = 25°C
250
W
Power Dissipation Derating TC > 25°C
1.67
W/°C
Operating Junction Temperature Range
-40 to 175
°C
Storage Junction Temperature Range
-40 to 175
°C
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
300
°C
Tpkg
Max Lead Temp for Soldering (Package Body for 10s)
260
°C
ESD
Electrostatic Discharge Voltage at 100pF, 1500Ω
4
kV
TJ
TSTG
TL
©2009 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Publication Order Number:
ISL9V5036S3S/D
Device Marking
V5036S
Device
ISL9V5036S3ST
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800
V5036P
ISL9V5036P3
TO-220AA
Tube
N/A
50
V5036S
ISL9V5036S3
TO-262AA
Tube
N/A
50
V5036S
ISL9V5036S3S
TO-263AB
Tube
N/A
50
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BVCER
Collector to Emitter Breakdown Voltage
IC = 2mA, VGE = 0,
RG = 1KΩ, See Fig. 15
TJ = -40 to 150°C
330
360
390
V
BVCES
Collector to Emitter Breakdown Voltage
IC = 10mA, VGE = 0,
RG = 0, See Fig. 15
TJ = -40 to 150°C
360
390
420
V
BVECS
Emitter to Collector Breakdown Voltage
IC = -75mA, VGE = 0V,
TC = 25°C
30
-
-
V
BVGES
Gate to Emitter Breakdown Voltage
IGES = ± 2mA
Collector to Emitter Leakage Current
VCER = 250V,
RG = 1KΩ,
See Fig. 11
ICER
IECS
Emitter to Collector Leakage Current
R1
Series Gate Resistance
R2
Gate to Emitter Resistance
±12
±14
-
V
TC = 25°C
-
-
25
µA
TC = 150°C
-
-
1
mA
VEC = 24V, See TC = 25°C
Fig. 11
TC = 150°C
-
-
1
mA
-
-
40
mA
-
75
-
Ω
10K
-
30K
Ω
On State Characteristics
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 10A,
VGE = 4.0V
TC = 25°C,
See Fig. 4
-
1.17
1.60
V
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 15A,
VGE = 4.5V
TC = 150°C
-
1.50
1.80
V
-
32
-
nC
Dynamic Characteristics
QG(ON)
Gate Charge
IC = 10A, VCE = 12V,
VGE = 5V, See Fig. 14
VGE(TH)
Gate to Emitter Threshold Voltage
IC = 1.0mA,
VCE = VGE,
See Fig. 10
VGEP
Gate to Emitter Plateau Voltage
IC = 10A,
TC = 25°C
1.3
-
2.2
V
TC = 150°C
0.75
-
1.8
V
-
3.0
-
V
VCE = 12V
Switching Characteristics
td(ON)R
trR
td(OFF)L
tfL
SCIS
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
Self Clamped Inductive Switching
VCE = 14V, RL = 1Ω,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
VCE = 300V, L = 2mH,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
-
0.7
4
µs
-
2.1
7
µs
-
10.8
15
µs
-
2.8
15
µs
TJ = 25°C, L = 670 µH,
RG = 1KΩ, VGE = 5V, See
Fig. 1 & 2
-
-
500
mJ
TO-263, TO-220, TO-262
-
-
0.6
°C/W
Thermal Characteristics
RθJC
Thermal Resistance Junction-Case
www.onsemi.com
2
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
Package Marking and Ordering Information
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
45
RG = 1KΩ, VGE = 5V,Vdd = 14V
40
35
30
TJ = 25°C
25
20
15
TJ = 150°C
10
5
SCIS Curves valid for Vclamp Voltages of
