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ISL9V5045S3ST_F085
EcoSPARK® N-Channel Ignition IGBT
500mJ, 450V
Features
General Description
SCIS Energy = 500mJ at TJ =
25oC
The ISL9V5045S3ST_F085 is next generation ignition IGBT
that offer outstanding SCIS capability in the industry
standard D2-Pak (TO-263) plastic package. This device
is intended for use in automotive ignition circuits,
specifically as a coil drivers. Internal diodes provide voltage
clamping without the need for external components.
Logic Level Gate Drive
Qualified to AEC Q101
RoHS Compliant
EcoSPARK ® devices can be custom made to specific
clamp voltages. Contact your nearest Fairchild sales office
for more information.
Applications
Automotive Ignition Coil Driver Circuits
Coil - On Plug Applications
Package
Symbol
COLLECTOR
R1
GATE
GATE
EMITTER
R2
COLLECTOR
(FLANGE)
JEDEC TO-263AB
D2-Pak
ISL9V5045S3ST_F085 Rev. A1
EMITTER
1
www.fairchildsemi.com
ISL9V5045S3ST_F085 N-Channel Ignition IGBT
February 2012
Symbol
BVCER
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Ratings
480
Units
V
BVECS
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
24
V
ESCIS25
At Starting TJ = 25°C, ISCIS = 39.2A, L = 650 µHy
500
mJ
ESCIS150
At Starting TJ = 150°C, ISCIS = 31.1A, L = 650 µHy
315
mJ
IC25
Collector Current Continuous, At TC = 25°C, See Fig 9
51
A
IC110
Collector Current Continuous, At TC = 110°C, See Fig 9
43
A
VGEM
Gate to Emitter Voltage Continuous
±10
V
PD
Power Dissipation Total TC = 25°C
300
W
2
W/°C
Operating Junction Temperature Range
-40 to 175
°C
Storage Junction Temperature Range
-40 to 175
°C
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
300
°C
Tpkg
Max Lead Temp for Soldering (Package Body for 10s)
260
°C
ESD
Electrostatic Discharge Voltage at 100pF, 1500Ω
4
kV
Power Dissipation Derating TC > 25°C
TJ
TSTG
TL
Package Marking and Ordering Information
Device Marking
V5045S
Device
ISL9V5045S3ST_F085
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800
V5045S
ISL9V5045S3
TO-262AA
Tube
N/A
50
V5045S
ISL9V5045S3S
TO-263AB
Tube
N/A
50
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BVCER
Collector to Emitter Breakdown Voltage
IC = 2mA, VGE = 0,
RG = 1KΩ, See Fig. 15
TJ = -40 to 150°C
420
450
480
V
BVCES
Collector to Emitter Breakdown Voltage
IC = 10mA, VGE = 0,
RG = 0, See Fig. 15
TJ = -40 to 150°C
445
475
505
V
BVECS
Emitter to Collector Breakdown Voltage
IC = -75mA, VGE = 0V,
TC = 25°C
30
-
-
V
BVGES
Gate to Emitter Breakdown Voltage
IGES = ± 2mA
±12
±14
-
V
Collector to Emitter Leakage Current
VCER = 320V, TC = 25°C
RG = 1KΩ, See T = 150°C
C
Fig. 11
-
-
25
µA
-
-
1
mA
VEC = 24V, See TC = 25°C
Fig. 11
TC = 150°C
-
-
1
mA
-
-
40
mA
-
100
-
Ω
10K
-
30K
Ω
ICER
IECS
Emitter to Collector Leakage Current
R1
Series Gate Resistance
R2
Gate to Emitter Resistance
On State Characteristics
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 10A,
VGE = 4.0V
TC = 25°C,
See Fig. 4
-
1.25
1.60
V
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 15A,
VGE = 4.5V
TC = 150°C
-
1.47
1.80
V
ISL9V5045S3ST_F085 Rev. A1
2
www.fairchildsemi.com
ISL9V5045S3ST_F085 N-Channel Ignition IGBT
Device Maximum Ratings TA = 25°C unless otherwise noted
QG(ON)
Gate Charge
IC = 10A, VCE = 12V,
VGE = 5V, See Fig. 14
VGE(TH)
Gate to Emitter Threshold Voltage
IC = 1.0mA,
VCE = VGE,
See Fig. 10
VGEP
Gate to Emitter Plateau Voltage
IC = 10A,
-
32
-
nC
TC = 25°C
1.3
-
2.2
V
TC = 150°C
0.75
-
1.8
V
-
3.0
-
V
VCE = 12V
Switching Characteristics
td(ON)R
trR
td(OFF)L
tfL
SCIS
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
Self Clamped Inductive Switching
VCE = 14V, RL = 1Ω,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
-
0.7
4
µs
-
2.1
7
µs
VCE = 300V, L = 2mH,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
-
10.8
15
µs
-
2.8
15
µs
TJ = 25°C, L = 650 µH,
RG = 1KΩ, VGE = 5V, See
Fig. 1 & 2
-
-
500
mJ
TO-263
-
-
0.5
°C/W
Thermal Characteristics
RθJC
Thermal Resistance Junction-Case
Typical Characteristics
40
RG = 1KΩ, VGE = 5V,Vdd = 14V
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
40
35
TJ = 25°C
30
25
20
15
TJ = 150°C
10
5
SCIS Curves valid for Vclamp Voltages of
