J109-D26Z

N-Channel JFET J109, MMBFJ108 Features • This Device is Designed for Digital Switching Applications where Very Low On Resistance is Mandatory • Sourced from Process 58 • These are Pb−Free Devices www.onsemi.com MAXIMUM RATINGS (TA = 25°C unless otherwise specified) (Notes 1, 2) Symbol Parameter Value Unit VDG Drain−Gate Voltage 25 V VGS Gate−Source Voltage −25 V 10 mA −55 to 150 °C IGF TJ, TSTG Forward Gate Current Operating and Storage Junction Temperature Range 1 TO−92 3 4.825x4.76 CASE 135AN Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady−state limits. ON Semiconductor should be consulted on applications involving pulsed or low−duty−cycle operations. 1 THERMAL CHARACTERISTICS (TA = 25°C unless otherwise specified) TO−92 3 4.83x4.76 LEADFORMED CASE 135AR Max Symbol PD Parameter J109 (Note 3) MMBFJ108 (Note 4) Unit Total Device Dissipation 625 350 mW Derate Above 25°C 5.0 2.8 mW/°C RqJC Thermal Resistance, Junction−to−Case 125 − °C/W RqJA Thermal Resistance, Junction−to−Ambient 200 357 °C/W 3 1 2 SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9 CASE 527AG 3. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Device mounted on FR−4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead minimum 6 cm2. 1. Drain, 2. Source, 3. Gate MARKING DIAGRAM $Y&Z&3&K J109 $Y&Z&3 J109 J109 J109−D26Z J109, I8 $Y &Y &G &Z &3 &K &Y I8 &G MMBFJ108 = Specific Device Code = ON Semiconductor Logo = Year Coding = Weekly Date Code = Assembly Plant Code = Date Code Format = Lot Run Traceability Code ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2002 December, 2020 − Rev. 4 1 Publication Order Number: J109/D J109, MMBFJ108 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Max Unit OFF CHARACTERISTICS V(BR)GSS IGSS VGS(off) Gate−Source Breakdown Voltage IG = −10 mA, VDS = 0 −25 − V Gate Reverse Current VGS = −15 V, VDS = 0 − −3.0 nA VGS = −15 V, VDS = 0, TA = 100°C − −200 MMBFJ108 −3.0 −10.0 J109 −2.0 −6.0 MMBFJ108 80 − J109 40 − MMBFJ108 − 8.0 J109 − 12 Gate−Source Cut−Off Voltage VDS = 15 V, ID = 10 nA V ON CHARACTERISTICS IDSS rDS(on) Zero−Gate Voltage Drain Current (Note 5) VDS = 15 V, VGS = 0 Drain−Source On Resistance VDS ≤ 0.1 V, VGS = 0 mA W SMALL SIGNAL CHARACTERISTICS Cdg(on) Csg(off) Drain−Gate & Source−Gate On Capacitance VDS = 0, VGS = 0, f = 1.0 MHz − 85 pF Cdg(off) Drain−Gate Off Capacitance VDS = 0, VGS = −10 V, f = 1.0 MHz − 15 pF Csg(off) Source−Gate Off Capacitance VDS = 0, VGS = −10 V, f = 1.0 MHz − 15 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ 2%. TYPICAL PERFORMANCE CHARACTERISTICS 300 VGS = 10 mV Unit with Typical VGS (off) = −7.8 V TA = 25°C VGS = 500 mV VGS = 1.0 V 250 VGS = 1.5 V ID, DRAIN CURRENT (mA) VGS = 2.0 V VGS = 2.5 V 200 VGS = 3.0 V VGS = 3.5 V VGS = 4.0 V 150 VGS = 4.5 V 100 VGS = 5.0 V VGS = 5.5 V 50 VGS = 6.5 V VGS = 6.0 V VGS = 7.0 V 0 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN SOURCE VOLTAGE (V) Figure 1. Common Drain−Source, MMBFJ108 www.onsemi.com 2 11 12 13 14 15 J109, MMBFJ108 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 200 VGS = −0.01 V −0.5 V 180 −1.0 V ID, DRAIN CURRENT (mA) 160 −1.5 V 140 120 −2.0 V 100 80 −2.5 V 60 40 −3.5 V Unit with Typical VGS(off) = −4.8 V TA = 25°C 20 0 0 2 4 6 8 10 12 14 16 VDS, DRAIN SOURCE VOLTAGE (V) Figure 2. Common Drain−Source,MMBFJ108, J109 250 Unit with Typical VGS(off) = −2.9 V TA = 25°C ID, DRAIN CURRENT (mA) 200 VGS = −0.1 V 150 −0.5 V 100 −1.0 V 50 −1.5 V −2.0 V 0 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN SOURCE VOLTAGE (V) Figure 3. Common Drain−Source, J109 www.onsemi.com 3 11 12 13 14 15 J109, MMBFJ108 100 1000 VGS = 100 mV ID = 100 mA VGS(off) @ VDS = 15 V, ID = 10 nA IDSS − DRAIN CURRENT (mA) rDS − DRAIN “ON” RESISTANCE (W) TYPICAL PERFORMANCE CHARACTERISTICS (continued) 10 1 −1 VGS = 0 PULSED VDS = 5 V VGS(off) @ VDS = 15 V, ID = 10 nA 100 10 −1 −10 Figure 5. Drain Current vs. Gate−Source Cut−Off Voltage 100 10 tON − TURN−ON TIME (ns) VDG = 10 V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.21 @ f ≥ 1.0 kHz 10 5 ID = 1.0 mA ID = 10 mA 1 0.01 0.03 ON en − NOISE VOLTAGE (nV / √Hz) Figure 4. Drain ON Resistance 50 0.1 0.5 1 2 10 8 6 ID = 30 mA 4 ID = 10 mA 2 0 100 TA = 25°C VDD = 1.5 V VGS = −12 V 0 f, FREQUENCY (Hz) rDS− DRAIN “ON” RESISTANCE (W) tOFF − TURN−OFF TIME (ns) VGS(off) = −8.5 V VGS(off) = −5.5 V VGS(off) = −3.5 V 20 10 TA = 25°C VDD = 1.5 V VGS = −12 V 0 0 5 10 15 −4 −6 −8 −10 Figure 7. Switching Turn−On Time vs. Gate−Source Cut−Off Voltage 50 30 −2 VGS(off), GATE CUTOFF VOLTAGE (V) Figure 6. Noise Voltage vs. Frequency 40 −10 VGS(off), GATE CUTOFF VOLTAGE (V) VGS(off), GATE CUTOFF VOLTAGE (V) 20 100 VGS = 0 V 10 25°C −55°C VGS(off) = −4.0 V 1 1 25 TA = 125°C VGS(off) = −2.9 V 10 ID, DRAIN CURRENT (mA) ID, DRAIN CURRENT (mA) Figure 8. Switching Turn−On Time vs. Drain Current Figure 9. On Resistance vs. Drain Current www.onsemi.com 4 100 J109, MMBFJ108 1000 gfs, TRANSCONDUCTANCE (mmhos) gos, TRANSCONDUCTANCE (mmhos) TYPICAL PERFORMANCE CHARACTERISTICS (continued) TA = 25°C f = 1.0 kHz VGS(off) = −4.0 V 100 10 1 0,1 1 10 100 TA = 25°C f = 1.0 kHz VGS = 10 V VGS(off) = −3.0 V @ VDS = 15 V, ID = 10 nA 10 1 0,1 0,1 1 ID, DRAIN CURRENT (mA) 10 ID, DRAIN CURRENT (mA) Figure 10. Output Conductance vs. Drain Current Figure 11. Output Conductance vs. Drain Current POWER DISSSIPATION, (mW) 700 600 TO−92 500 400 SUPERSOT−3 300 200 100 0 0 20 40 60 80 100 120 140 160 T, AMBIENT TEMPERATURE (°C) Figure 12. Power Dissipation vs. Ambient Temperature ORDERING INFORMATION Top Mark Package Shipping† J109 J109 TO−92 3L (Pb−Free) 10000 Units / Bulk J109−D26Z J109 TO−92 3L (Pb−Free) 2000 / Tape & Reel MMBFJ108 I8 SSOT 3L (Pb−Free) 3000 / Tape & Reel Part Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. SUPERSOT is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 4.825x4.76 CASE 135AN ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13880G TO−92 3 4.825X4.76 DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13879G DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9 CASE 527AG ISSUE A GENERIC MARKING DIAGRAM* XXXMG G DOCUMENT NUMBER: DESCRIPTION: XXX = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) 98AON34319E DATE 09 DEC 2019 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. SOT−23/SUPERSOT−23, 3 LEAD, 1.4X2.9 PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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